JPS59117121A - Projection type mask aligner - Google Patents

Abstract

PURPOSE:To reduce the frequency of changing a photomask setting the necessary pattern easily by a method wherein the surface of wafer or the like can be exposed with a plurality of photomasks by an identical projection exposure system and a mask selection means is provided to the optical system of each photomask. CONSTITUTION:A wafer 1, which is placed on a stage 2 and whose surface is coated by the prescribed photoresist, is moved along the horizontal X and Y directions by the stage 2. On the other hand, photomasks 3, 4, which are formed to the patterns different to each other, are supported at the positions perpendicular to each other by holders 5, 6 and illuminated by the light source lamps 7, 8. Then, a contracting type projection optical system 9 is provided to the light axis of one photomask 3 and the wafer 1 and a half mirror 10 is provided to the cross point of that light axis and the light axis of another photomask 4. Shutters 11, 12, which can be operated individually, are provided to the light paths of those photomasks 3, 4.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a shadow-type manufacturer aligner, and particularly to a large mask aligner with free deformation of the projection pattern.

7, which is one of the manufacturing methods for semiconductor devices. Ir j
i-Mic Raffie uses a large single-nuclear aligner that exposes and transfers the photomask pattern onto the entire wafer surface.
In particular, a projection type aligner, which reduces the size of a photoprint pattern and transfers it onto a wafer, is widely used. As is well known, the mask aligner of this punch exposes the wafer by projecting (reducing) it onto the surface of the wafer placed on the opposite side using a small photon lens set at a predetermined position. By moving it vertically and horizontally upward, a square pattern 59 can be formed on the wafer surface.

By the way, in this type of process, there are cases where it is desired to partially change the shape of the patterns formed on the wafer, or there are cases where it is required to perform pattern exposure with a different numbering pattern. In this case, with conventional mask aligners, you have to replace the photonuke each time to improve exposure, or the ridges are a common pattern, and the ridges are a common pattern. In contrast to +-, by performing multiple exposures on one unit and one or more of them,
7) The exposure work is extremely complicated and takes a long time to change the position and focus each time, and the work efficiency is poor and the exposed pattern 1 foil. The problem has arisen that there is a limit to how much improvement can be made.

However, an object of the present invention is to completely reduce the frequency of replacing the photo-dunuku, and at the same time, to be able to set a necessary pattern on the cylinder, thereby improving the exposure work efficiency and improving the efficiency of the exposure process.
The purpose of this method is to provide a projection type bus aligner that can improve pattern accuracy.

In order to achieve this objective, the present invention is designed to set each projection exposure at different positions.
In addition to making it possible to expose the surface of a wafer or the like using a system, mask selection means such as a half mirror or a movable mirror are provided in the optical system of each photomask. It is composed in such a way that it seems to be a dream in its entirety.

Hereinafter, the present invention will be explained with reference to the illustrated embodiments.

1 is a practical example of the projection type Nukualigner of the present invention, and 2 is a wafer placed on a stage 2 consisting of an XY table or the like. This wafer 1 has a predetermined photoresist coated on its surface and is moved by a stage 2 in the horizontal X and Y directions.

On the other hand, numeral 3.4 denotes photomasks each having a different pattern shape, each of which is supported by a holder 5.6 at mutually orthogonal positions and illuminated by a light source lamp 7.8.

A reduction type projection optical system 9 is entirely disposed on the optical axis of one photomask 3 and the wafer 1, and at the intersection of this optical axis and the optical axis of the other photomask 4. is the optical axis K
A half mirror 10 tilted at 45 degrees will be installed and discussed.

Further, the optical path of each of the photomasks 3.4 is independent,
There are 11 and 12 shutters that are operated by the operator. It goes without saying that each photonuc 3.4 is set to have the same optical path length for the wafer 1.

According to the above configuration, if the shutters 11 and 12 are both closed, the photomask 3 is transmitted through the half mirror 10 and reflected by the wafer mirror 10 by the projection optical system 9, and then the same projection is made on the other side. The optical system 9 shifts the pattern exposure to p-way...10.

However, in this state, each pattern shape of the photomask 3.4 is formed and projected onto the wafer for exposure. For example, if you set a foot-shaped pattern as one photomask 7 and set a photoshift for numbering on the other photomask 4, you can set the f-shaped photomask 4. By simply changing the number (number) shown in k It, one of the three digits of one photomask can be exposed. It can be exposed to light. As a result, it is possible to improve work efficiency by eliminating the need to replace the main pattern photonuc 3 or to perform focusing each time, as well as stabilizing the pattern and improving accuracy.

On the other hand, when the shutters 11 and 12 are turned off, the photomask on the closed side of the shank is not exposed, but only the open side is exposed, so each photomask 3.
The exposure of step 4 can be carried out sequentially or selectively. However, when pattern synthesis is necessary, both shutters 11.12 are opened, but when synthesis is not necessary, either one of the shutters 11.12'ir+' is opened. Bye. When exposing different types of butter on the wafer 1 alternately or in a desired arrangement, each photonuke 3.4 has a different pattern, and one of the pattern shapes can be selected by the switching action of the shutter 11.12. 8 Furthermore, when performing the pattern exposure of Sanwa or more, V may change the other photomask while exposing one photomask, and the other photomask may be exposed. By exchanging one of the photomasks during the exposure, the time required to exchange the photomask can be shortened. By using these methods, it is possible to reduce the frequency of occurrence of photomasks and also to prevent deterioration of the photomask.

FIG. 2 shows another embodiment I of the present invention, and the same parts as in FIG. 1 are given the same reference numerals and explanations are omitted. Kumi or IJ 11 Kennl [For example, half mirror 10, shutter 1
1.12υ was used instead of the movable mirror 13.i1
There is only one difference. f2+] Thirteen movable mirrors that rotate at an angle of about 45° about a fulcrum are arranged at the intersection of the light 1.1t1 of one photomask 3 and the optical axis of the other photomask 4. 7. In response to the rotational position of the movable mirror 13, the photoscope is switched and exposed. Therefore, if the movable mirror 13 is in the position indicated by the solid line in the figure, the projection optical system 9 can expose the wafer 1 by eliminating reflection by the other mirror 4, but the position indicated by the chain line in the figure is Jt-I' Then, the photomask 3 of the force is completely directly projected'/(: The wafer is exposed to light from the optical system 9V.

As a result, the photonuc 3.4 can be switched for exposure, and as in the previous example, it is possible to improve work efficiency and pattern accuracy.

Figure 3 is further K ft! An example of J is shown. 1] is the electric circuit 1 in place of the shutter 11.120 in the embodiment shown in FIG.
4. Flt: 7.8 light source lamps, constructed so that they can be turned off, are designed for women. Ell, light source lamp? By turning off the light, the pattern light of the photomask is not transmitted to the projection optical system 9, and the photon on the side that is lit (or both when both are lit) can be exposed.

According to this example, since switching can be performed under the control of the electric circuit 14 of the light source lamp 7.8, driving parts such as the shutter LL, 12 or the movable mirror 13 can be omitted, and the configuration can be simplified.

In addition, in a semiconductor memory product having a redundant circuit using the above-described aligner of the present invention, cutting of the redundant circuit, etc. can also be processed by this exposure process.

In addition to direct exposure to tri, wafer, etc., it is also effective when manufacturing a contact lens from a reticle.

As described above, according to the projection type Zunuku aligner of the present invention,
Mask selection means on the optical path of several photomasks? Since the exposure of each photomask can be carried out selectively or selectively, the frequency of replacing the photomasks can be reduced, and the pattern accuracy can be easily synthesized or selected. By increasing the size and size of the intervening area, we aim to achieve a total improvement of a thousand effects, as well as the ability to improve the degree of pattern visibility.

[Brief explanation of the drawing]

Figure 1 is a block diagram of the first example of the busk aligner of the present invention;
Other embodiments of coffin construction: 1...Wafer, 3.4...Hoto J Nuku, 5.6...
Holder, '7.8... Hikari Oki lamp, 9 - Projection optical system,
10/-Fumira, 11.12 Shutter, 13
... n1 City 11 Miller, 14 ・iK Kikkyou 1 Representative Patent Attorney Bo 1) O;-1 Shin 1 Figure 2 Figure 3

Claims (1)

[Claims] 1. A plurality of ho 1 manukus are placed at the 1, P, ru position.
99 is an optical system capable of projecting and exposing the pattern of each photomask onto a photomask, etc.
And a mask that can be introduced into the projection system depending on the pattern light of each photon or as an option.
A projection-type mask aligner whose main feature is the provision of steps. 2-Nuc selection 11 The means for selecting a photomask is a half mirror provided at the optical recess point of each photomask, and each photo mask corresponds to [-
The fA'r box 1 of the patent claim consists of a shutter provided with a
Projection type mask aligner of m-1;・°l. 3. - Nucleus selection means (d) consisting of a fc movable mirror provided in each photonuc's light hl, i and cross-cooking d.