JPS5988885A - 集積化光発振器 - Google Patents
集積化光発振器Info
- Publication number
- JPS5988885A JPS5988885A JP57197758A JP19775882A JPS5988885A JP S5988885 A JPS5988885 A JP S5988885A JP 57197758 A JP57197758 A JP 57197758A JP 19775882 A JP19775882 A JP 19775882A JP S5988885 A JPS5988885 A JP S5988885A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- active layer
- laser
- layer
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 41
- 230000010355 oscillation Effects 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000009826 distribution Methods 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims description 12
- 238000005253 cladding Methods 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 18
- 239000013307 optical fiber Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 238000004891 communication Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0267—Integrated focusing lens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57197758A JPS5988885A (ja) | 1982-11-12 | 1982-11-12 | 集積化光発振器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57197758A JPS5988885A (ja) | 1982-11-12 | 1982-11-12 | 集積化光発振器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5988885A true JPS5988885A (ja) | 1984-05-22 |
| JPS6329439B2 JPS6329439B2 (https=) | 1988-06-14 |
Family
ID=16379854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57197758A Granted JPS5988885A (ja) | 1982-11-12 | 1982-11-12 | 集積化光発振器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5988885A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63200591A (ja) * | 1987-02-17 | 1988-08-18 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置の製造方法 |
| US5084895A (en) * | 1989-02-24 | 1992-01-28 | Nippon Telegraph Telephone Corporation | Semiconductor light emitting system |
-
1982
- 1982-11-12 JP JP57197758A patent/JPS5988885A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63200591A (ja) * | 1987-02-17 | 1988-08-18 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置の製造方法 |
| US5084895A (en) * | 1989-02-24 | 1992-01-28 | Nippon Telegraph Telephone Corporation | Semiconductor light emitting system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6329439B2 (https=) | 1988-06-14 |
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