JPS5988820A - シ−トプラズマを利用した化合物半導体薄膜製造装置 - Google Patents

シ−トプラズマを利用した化合物半導体薄膜製造装置

Info

Publication number
JPS5988820A
JPS5988820A JP57198871A JP19887182A JPS5988820A JP S5988820 A JPS5988820 A JP S5988820A JP 57198871 A JP57198871 A JP 57198871A JP 19887182 A JP19887182 A JP 19887182A JP S5988820 A JPS5988820 A JP S5988820A
Authority
JP
Japan
Prior art keywords
sheet plasma
substrate
compound semiconductor
plasma
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57198871A
Other languages
English (en)
Japanese (ja)
Other versions
JPH023291B2 (en:Method
Inventor
Muneharu Komiya
小宮　宗治
Joshin Uramoto
上進 浦本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Priority to JP57198871A priority Critical patent/JPS5988820A/ja
Publication of JPS5988820A publication Critical patent/JPS5988820A/ja
Publication of JPH023291B2 publication Critical patent/JPH023291B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/22—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57198871A 1982-11-15 1982-11-15 シ−トプラズマを利用した化合物半導体薄膜製造装置 Granted JPS5988820A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57198871A JPS5988820A (ja) 1982-11-15 1982-11-15 シ−トプラズマを利用した化合物半導体薄膜製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57198871A JPS5988820A (ja) 1982-11-15 1982-11-15 シ−トプラズマを利用した化合物半導体薄膜製造装置

Publications (2)

Publication Number Publication Date
JPS5988820A true JPS5988820A (ja) 1984-05-22
JPH023291B2 JPH023291B2 (en:Method) 1990-01-23

Family

ID=16398304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57198871A Granted JPS5988820A (ja) 1982-11-15 1982-11-15 シ−トプラズマを利用した化合物半導体薄膜製造装置

Country Status (1)

Country Link
JP (1) JPS5988820A (en:Method)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61119676A (ja) * 1984-11-15 1986-06-06 Ulvac Corp シ−トプラズマとレ−ザ光を利用した成膜装置
JPS61176121A (ja) * 1985-01-31 1986-08-07 Tokai Univ シ−トプラズマを利用した真空プロセス装置
JPS6350464A (ja) * 1986-08-19 1988-03-03 Toobi:Kk シ−トプラズマ・イオンプレ−テイング方法とその装置
US5178905A (en) * 1988-11-24 1993-01-12 Canon Kabushiki Kaisha Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state
US9620260B2 (en) 2012-12-14 2017-04-11 Autonetworks Technologies, Ltd. Insulating coated wire and method for manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577129A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Treating method and device for sputtering
JPS57156031A (en) * 1981-03-20 1982-09-27 Matsushita Electric Ind Co Ltd Formation of thin film and vacuum deposition device
JPS58166930A (ja) * 1982-03-05 1983-10-03 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 中和されたイオン・ビ−ムを発生させる装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577129A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Treating method and device for sputtering
JPS57156031A (en) * 1981-03-20 1982-09-27 Matsushita Electric Ind Co Ltd Formation of thin film and vacuum deposition device
JPS58166930A (ja) * 1982-03-05 1983-10-03 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 中和されたイオン・ビ−ムを発生させる装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61119676A (ja) * 1984-11-15 1986-06-06 Ulvac Corp シ−トプラズマとレ−ザ光を利用した成膜装置
JPS61176121A (ja) * 1985-01-31 1986-08-07 Tokai Univ シ−トプラズマを利用した真空プロセス装置
JPS6350464A (ja) * 1986-08-19 1988-03-03 Toobi:Kk シ−トプラズマ・イオンプレ−テイング方法とその装置
US5178905A (en) * 1988-11-24 1993-01-12 Canon Kabushiki Kaisha Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state
US9620260B2 (en) 2012-12-14 2017-04-11 Autonetworks Technologies, Ltd. Insulating coated wire and method for manufacturing the same

Also Published As

Publication number Publication date
JPH023291B2 (en:Method) 1990-01-23

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