JPS5988820A - シ−トプラズマを利用した化合物半導体薄膜製造装置 - Google Patents
シ−トプラズマを利用した化合物半導体薄膜製造装置Info
- Publication number
- JPS5988820A JPS5988820A JP19887182A JP19887182A JPS5988820A JP S5988820 A JPS5988820 A JP S5988820A JP 19887182 A JP19887182 A JP 19887182A JP 19887182 A JP19887182 A JP 19887182A JP S5988820 A JPS5988820 A JP S5988820A
- Authority
- JP
- Japan
- Prior art keywords
- sheet plasma
- substrate
- compound semiconductor
- plasma
- sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 150000001875 compounds Chemical class 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010409 thin film Substances 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 150000002500 ions Chemical class 0.000 claims abstract description 13
- 238000011109 contamination Methods 0.000 abstract description 5
- 238000005468 ion implantation Methods 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 238000003795 desorption Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- 150000004772 tellurides Chemical class 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- 101150061900 Ambn gene Proteins 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19887182A JPS5988820A (ja) | 1982-11-15 | 1982-11-15 | シ−トプラズマを利用した化合物半導体薄膜製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19887182A JPS5988820A (ja) | 1982-11-15 | 1982-11-15 | シ−トプラズマを利用した化合物半導体薄膜製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5988820A true JPS5988820A (ja) | 1984-05-22 |
| JPH023291B2 JPH023291B2 (enrdf_load_stackoverflow) | 1990-01-23 |
Family
ID=16398304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19887182A Granted JPS5988820A (ja) | 1982-11-15 | 1982-11-15 | シ−トプラズマを利用した化合物半導体薄膜製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5988820A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61119676A (ja) * | 1984-11-15 | 1986-06-06 | Ulvac Corp | シ−トプラズマとレ−ザ光を利用した成膜装置 |
| JPS61176121A (ja) * | 1985-01-31 | 1986-08-07 | Tokai Univ | シ−トプラズマを利用した真空プロセス装置 |
| JPS6350464A (ja) * | 1986-08-19 | 1988-03-03 | Toobi:Kk | シ−トプラズマ・イオンプレ−テイング方法とその装置 |
| US5178905A (en) * | 1988-11-24 | 1993-01-12 | Canon Kabushiki Kaisha | Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state |
| US9620260B2 (en) | 2012-12-14 | 2017-04-11 | Autonetworks Technologies, Ltd. | Insulating coated wire and method for manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS577129A (en) * | 1980-06-17 | 1982-01-14 | Fujitsu Ltd | Treating method and device for sputtering |
| JPS57156031A (en) * | 1981-03-20 | 1982-09-27 | Matsushita Electric Ind Co Ltd | Formation of thin film and vacuum deposition device |
| JPS58166930A (ja) * | 1982-03-05 | 1983-10-03 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 中和されたイオン・ビ−ムを発生させる装置 |
-
1982
- 1982-11-15 JP JP19887182A patent/JPS5988820A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS577129A (en) * | 1980-06-17 | 1982-01-14 | Fujitsu Ltd | Treating method and device for sputtering |
| JPS57156031A (en) * | 1981-03-20 | 1982-09-27 | Matsushita Electric Ind Co Ltd | Formation of thin film and vacuum deposition device |
| JPS58166930A (ja) * | 1982-03-05 | 1983-10-03 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 中和されたイオン・ビ−ムを発生させる装置 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61119676A (ja) * | 1984-11-15 | 1986-06-06 | Ulvac Corp | シ−トプラズマとレ−ザ光を利用した成膜装置 |
| JPS61176121A (ja) * | 1985-01-31 | 1986-08-07 | Tokai Univ | シ−トプラズマを利用した真空プロセス装置 |
| JPS6350464A (ja) * | 1986-08-19 | 1988-03-03 | Toobi:Kk | シ−トプラズマ・イオンプレ−テイング方法とその装置 |
| US5178905A (en) * | 1988-11-24 | 1993-01-12 | Canon Kabushiki Kaisha | Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state |
| US9620260B2 (en) | 2012-12-14 | 2017-04-11 | Autonetworks Technologies, Ltd. | Insulating coated wire and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH023291B2 (enrdf_load_stackoverflow) | 1990-01-23 |
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