JPS5987878A - Avalanche photo diode - Google Patents
Avalanche photo diodeInfo
- Publication number
- JPS5987878A JPS5987878A JP57197014A JP19701482A JPS5987878A JP S5987878 A JPS5987878 A JP S5987878A JP 57197014 A JP57197014 A JP 57197014A JP 19701482 A JP19701482 A JP 19701482A JP S5987878 A JPS5987878 A JP S5987878A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- moreover
- forbidden band
- sensitivity
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 abstract 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- -1 TNV group compound Chemical class 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は低雑音、広波長帯域のアノ（う／シェフオドダ
イオードに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to low noise, wide wavelength band anno/chef diodes.
従来例の構成とその問題点
アバランシェフォトダイオード（以下ムＰＤとよぶ）は
、将来の光通信の担い手として重要な、受光増巾素子と
して知られている。ＡＰＤは、その高感度と高速性の利
点にもかかわらず、かなシ大きなアバランシェ雑音が付
随するという欠点を有する。アバランシェ雑音に、正孔
のイオン化係数αと電子のイオン化係数βの大きさが著
しく異なる（α／β）１又はα／β（１）ときに、著し
く小さくなる。ｅａｌ−２Ａｘｚｓｂにあっては、その
禁制布巾Ｅｃとスピン分離エネルギーΔ０が等しくなる
Ｘ＝０．０６２においてα／β）１であることが最近間
らかにされた。（αＨｉｔｄｅｂｒａｎｄ。2. Description of the Related Art Structures of Conventional Examples and Their Problems Avalanche photodiodes (hereinafter referred to as PDs) are known as light-receiving amplification elements that will be important as a carrier of future optical communications. Despite the advantages of high sensitivity and high speed, APDs have the disadvantage of being accompanied by significant avalanche noise. Avalanche noise becomes significantly smaller when the ionization coefficient α of holes and the ionization coefficient β of electrons are significantly different in magnitude (α/β)1 or α/β(1). In eal-2Axzsb, it has recently been clarified that α/β)1 at X=0.062, where the forbidden cloth Ec and the spin separation energy Δ0 are equal. (αHitdebrand.
Ｗ、 ｋｕｅｂａｒｔ、 Ｊ、 Ｌｕｔｚ 、 ａｎｄ
Ｋ、Ｗ、 Ｂａｎｚ、 １５ｔｈ Ｉｎｔｅｒｎａｔ
ｉｏｎａｌ Ｃｏｎｆｅｒｅｎｃｅ ｏｎ ｔｈｅｐｈ
７！１ｌＯ８ｏｆ ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ （
Ｋｙｏｔｏ） ５１９８０・）
この材料の禁制布巾Ｂａ１ｄ、オプティカルファイバー
を用いた光通信において最も有望視されている。１・６
μｍでの波長感度を与える点で好都合、２、である。し
かしながら現状では、ＧａＡｓや、 ）アバランシ
ェダイオードは余り適当ではない。 ・′。W, Kuebart, J, Lutz, and
K.W. Banz, 15th International
ional Conference on theph
7!1lO8of semiconductors (
Kyoto) 51980・) This material is considered to be most promising in optical communication using optical fibers. 1・6
2, which is advantageous in that it provides wavelength sensitivity in μm. However, at present, GaAs and ) avalanche diodes are not very suitable.・′.
発明の目的
本発明は、Ｆ、ａ−＝Δ０を与えるＸ＝０．０５２のＧ
ａ１ｚＡｌｚｓｂ材料全欠乏層の一部として含み、低−
雑音でかつ広波長帯域感摩ヲ有するアバランシェ、。OBJECTS OF THE INVENTION The present invention provides a G
a1zAlzsb Included as part of the total material depletion layer, low-
Avalanche with noise and wide wavelength band sensitivity.
フォトダイオード：を提供することを目的とするもので
ある。Photodiode: The purpose is to provide.
発明の構成
不発明に一導電型を有し、禁制布巾とスピン分離エネル
ギーがほぼ等しくなる混晶比を有する■−Ｖ族化合物半
導体の混晶からなる第１の層と、この第１の）＠をはさ
むとともに禁制帯市亦前記第１の層よりも大きくかった
がいに導電型を異にする前記ｎ＋ −ｖ族化合物半導体
の混晶からなる第２゜第３の層との３層構造を有するア
バラノシェフォ実施例
第１図に、本発明のアバラノシェフォトダイオの異なる
３種類のＧａ１−ｘＡｌｘ５ｂ層１，２．３で構１．二
成きれ、層１を入射側とする。。そして各竺Ｑｘ値′を
、それぞれＸｌ 、 ＸＯ、Ｘ２とする。層２ｉ’ｘＯ
−０・０５２としてＢａ＝ΔＯｔ示す材料で形成され、
その両側の層１や層３は、ｘｌ＞ｘｏ、 ｘ２〉ｘ。A first layer consisting of a mixed crystal of a ■-V group compound semiconductor having one conductivity type and having a mixed crystal ratio such that the spin separation energy is approximately equal to that of the forbidden cloth; A three-layer structure with a second layer and a third layer sandwiching the n+-v group compound semiconductor and having a forbidden band and a different conductivity type from each other than the first layer. FIG. 1 shows an embodiment of the Avalanoche photodiode according to the present invention, which is composed of three different types of Ga1-xAlx5b layers 1, 2.3. There are two layers, and layer 1 is on the incident side. . Then, let the respective Qx values' be Xl, XO, and X2, respectively. Layer 2i'xO
-0.052, formed of a material showing Ba=ΔOt,
For layers 1 and 3 on both sides, xl>xo, x2>x.
、と、してｈ２より大きい禁制帯４巾Ｅａの材料で形成
される。各層内でＸｕ場所的に変化してもよい゛が、ｘ
ｌとｘ２の下限値は、ｘＯの上限値より小さくならない
ようにする。屑１と層３はたがいに反対の導電型にし、
層２はｎ型、ｐ型のいずれでもよ四層１と層３の不純物
濃度はできるだけ低□く、−２の濃度はできるだけ高く
する。このダイオードに逆方向電圧を印加すると、電１
；Ｊ層２で最大になり、その上、層２のＨａが最小であ
ることも加えて、アバランシェはほぼＪｆｊＩ２のみで
起きる。層１と層３内では、層２で生成された成子又は
正孔の走行！；あるのみである。層２の厚さを七分に厚
くすれば、光は層１と層２でほとんど吸収されてし１い
、波長感度は、層１と層２の禁制布巾ＲＧでほぼ決筐り
、層２における長波長感度に、更に、層１と層２の両者
による短波長感度が附加される。, and is formed of a material having a forbidden band width Ea of 4 which is larger than h2. Although Xu may vary locally within each layer, x
The lower limits of l and x2 should not be smaller than the upper limit of xO. Scrap 1 and layer 3 are of opposite conductivity type,
Layer 2 may be either n-type or p-type.The impurity concentration of layers 1 and 3 is as low as possible, and the -2 concentration is as high as possible. When a reverse voltage is applied to this diode, the current
; It is maximum in J layer 2, and furthermore, in addition to the fact that Ha in layer 2 is minimum, avalanche occurs almost only in JfjI2. In layer 1 and layer 3, the electrons or holes generated in layer 2 travel! ;There is only. If the thickness of layer 2 is made 7 times thicker, most of the light will be absorbed by layers 1 and 2, and the wavelength sensitivity will be almost determined by the forbidden cloth RG of layers 1 and 2. Further, short wavelength sensitivity due to both layer 1 and layer 2 is added to the long wavelength sensitivity in .
このよう−に、本発明のＡＰＤは、Ｘ＝ＸＯだけの材料
によって作られたムＰＤに比べて広波長帯域感度を有す
る上に、アバランシェは層２で決まるので低雑音性を示
す。その上、降伏屯田は層２内での電圧降下でほぼ決ま
るので、この波長帯の通常のＡＰＤに比して低醒圧で動
作する。層３は、層２が電Ｗゼロの頭載に接することに
よる、表面再結合や拡散遅れの効果ヲ減らすために設け
られ、これが広帯域性を更に保証する。As described above, the APD of the present invention has a broader wavelength band sensitivity than a PD made of a material where only X=XO, and also exhibits low noise because avalanche is determined by layer 2. Moreover, since the breakdown voltage is approximately determined by the voltage drop within layer 2, it operates at a lower voltage drop than normal APDs in this wavelength range. Layer 3 is provided to reduce the effect of surface recombination and diffusion delay due to layer 2 contacting the head of zero electric current W, which further ensures broadband performance.
第２図に本発明のさらに具体的な実施例を示す。FIG. 2 shows a more specific embodiment of the present invention.
光の入射側から順次、不純物濃度Ｉ Ｑ１９Ｃ！ＩＩ
’ ｌ厚さＯ−５，ｐｍ Ｆ） ｐ型Ｂｇ、ｏ、６Ａｌ
ｏ、４８．ｂ 層４． Ｊ４４物１１に度１０． ｃｍ
、厚さ２ 、μｍ （Ｄ ｐ型＜ｐ、ａ。、６Ａｌｏ、
、、Ｓｌｌ！層１゜不純ミ吻濃度１０１８ｃｍ ’＋
厚さ１ μｍ （７） ｎ型”０．５４８ ”Ｏ，、。Sequentially from the light incident side, the impurity concentration I Q19C! II
' l Thickness O-5, pm F) p-type Bg, o, 6Al
o, 48. b layer 4. J44 thing 11 degree 10. cm
, thickness 2, μm (D p type < p, a., 6Alo,
,,Sll! Layer 1゜ impurity concentration 1018 cm '+
Thickness: 1 μm (7) N-type “0.548” O,.
５２ｓｂ層２．不紬物嬢度ｔｏ −ｃｍ ｅ厚さ２
ｐｍのｎ型ＧＩＬ０．８ Ａｌ［Ｌ２ＳｂＪｔ ３が不
純物濃度１ Ｏ１９Ｃｍ ’のｎ型基板６の上に形成さ
れている。52sb layer 2. Thickness to −cm e thickness 2
A pm n-type GIL0.8 Al[L2SbJt 3 is formed on an n-type substrate 6 with an impurity concentration of 1 O19Cm'.
この人ＰＤの波長感度曲ａを第３図に示す。The wavelength sensitivity curve a of this person's PD is shown in FIG.
感度は０・８〜１・４μｍで平坦でかつ最大である。The sensitivity is flat and maximum at 0.8 to 1.4 μm.
この素子の動作電圧［２’５Ｖである。The operating voltage of this element is [2'5V].
ナオ、材料としてｉｊ Ｇａｒｂ 、 ＩｎＡｓ７どの
ｔｎ−ｖ族化合物半導体とこれより大きい禁制布巾のｌ
ｌｌ−■族化合物半導体との混晶を用いて同様のＡＰＤ
を作ることもできる。Nao, the material is ij Garb, InAs7 which TNV group compound semiconductor and a larger forbidden cloth.
A similar APD using a mixed crystal with a ll-■ group compound semiconductor
You can also make
発明の効果
不発明のアバランシエフオドダイオードは、従来のもの
に比べて広波長帯域感度を有するとともに、低雑音、低
゛亀圧で動作するもので、工業上の利用価値が高い。
゛ −Effects of the Invention The inventive avalanche photodiode has a wider wavelength band sensitivity than conventional ones, and operates with low noise and low torque, so it has high industrial utility value.
゛ −
第１画は本発明のアバランシェダイオードの基本構成を
説明するための図、８２図は本発明−の実施例のアバラ
ンシェダイオードの構成を示す図、第３図は同ダイオー
ドにおける感度の波長依存性を示す図である。
１・・・・・・第２の層、２・旧・・第１の層、３°旧
°°第３の層。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
３
第２図The first drawing is a diagram for explaining the basic configuration of the avalanche diode of the present invention, FIG. 82 is a diagram showing the configuration of the avalanche diode of the embodiment of the present invention, and FIG. FIG. 1...Second layer, 2.Old...First layer, 3°Old°°Third layer. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 3 Figure 2
Claims (2)
ーがほぼ等しくなる混晶比を有する■−■族化曾物半導
体の混晶からなる第１の層と、この第１の層をはさむと
ともに禁制布巾が前記第１の層よシも大きくかったがい
に導電型を異にする前記■−ｖ族化会物半導体の混晶か
らなる第２．第３の層との３層構造を有するアバランシ
ェフォトダイオード。(1) A first layer made of a mixed crystal of a ■-■ group compound semiconductor having a conductivity type and a mixed crystal ratio that makes the spin separation energy almost equal to that of the forbidden cloth, and this first layer. The second layer, which is made of a mixed crystal of the ■-V compound semiconductor, has a conductivity type that is significantly different from that of the first layer. An avalanche photodiode having a three-layer structure with a third layer.
ｌ ｚＡｌｚｓｂからなる第１の層と、混晶比が前記第
１の層よりも大きいＧａ１ｚＡｌｚｓｂからなる第２．
第３の層とからなることを特徴とする特許請求の範囲第
１項記載のアバランシ・エフオドダイオード。(2) Ga with a mixed crystal ratio of 0.04 to 0.06
A first layer made of Ga1zAlzsb and a second layer made of Ga1zAlzsb having a larger mixed crystal ratio than the first layer.
2. The avalanche efficiency diode according to claim 1, further comprising a third layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57197014A JPS5987878A (en) | 1982-11-10 | 1982-11-10 | Avalanche photo diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57197014A JPS5987878A (en) | 1982-11-10 | 1982-11-10 | Avalanche photo diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5987878A true JPS5987878A (en) | 1984-05-21 |
Family
ID=16367343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57197014A Pending JPS5987878A (en) | 1982-11-10 | 1982-11-10 | Avalanche photo diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5987878A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02259533A (en) * | 1989-03-31 | 1990-10-22 | Agency Of Ind Science & Technol | Method for correcting fluorescent stimulating spectrum and fluorescent emission spectrum of fluorescence spectrophotometer |
-
1982
- 1982-11-10 JP JP57197014A patent/JPS5987878A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02259533A (en) * | 1989-03-31 | 1990-10-22 | Agency Of Ind Science & Technol | Method for correcting fluorescent stimulating spectrum and fluorescent emission spectrum of fluorescence spectrophotometer |
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