JPS5985123A - Air-tight base for piezoelectric oscillator - Google Patents

Air-tight base for piezoelectric oscillator

Info

Publication number
JPS5985123A
JPS5985123A JP19442182A JP19442182A JPS5985123A JP S5985123 A JPS5985123 A JP S5985123A JP 19442182 A JP19442182 A JP 19442182A JP 19442182 A JP19442182 A JP 19442182A JP S5985123 A JPS5985123 A JP S5985123A
Authority
JP
Japan
Prior art keywords
hole
metallic
metal
base
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19442182A
Other languages
Japanese (ja)
Inventor
Kunio Sasaki
邦夫 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Crystal Device Corp
Original Assignee
Kyocera Crystal Device Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Crystal Device Corp filed Critical Kyocera Crystal Device Corp
Priority to JP19442182A priority Critical patent/JPS5985123A/en
Publication of JPS5985123A publication Critical patent/JPS5985123A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/10Mounting in enclosures
    • H03H9/1007Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

PURPOSE:To form a chip type oscillator by providing an insulator base having a through-hole and a metallic terminal having a projection inserted to the said through-hole to a flat part of the terminal and soldering the said projection to a metallic layer provided around the through-hole of the insulator base. CONSTITUTION:The metallic terminal formed by spot-welding a projection 22 made of a short wire having 0.4mm. of diameter to a metallic thin plate 21 is inserted to a through-hole 12 of the insulator base 11 to form an air-tight base 51. The projection 22 is soldered to the metallic layer 13 provided around the through-hole 12. The metallic thin plate 21 forming the flat part is soldered to the metallic layer 15 of the lowr side of the base. A piezoelectric element 52 of tablet form is mounted on the air-tight base 51, and a metallic can 61 is sealed to it to obtain a chip type piezoelectric oscillator.

Description

【発明の詳細な説明】 本発明は、圧電素子をケース内に気密に封入するだめの
圧電振動子用気密ベースに門するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention is directed to an airtight base for a piezoelectric vibrator, which hermetically encapsulates a piezoelectric element within a case.

近年、電子帆器が一般に71・形化する中で、個々の朽
成部品についても小形化が要求され、いわゆるチップ部
品と呼ばれるJlτ・′I造が各方面で多く用いられる
ように女っている。どころかこのような情勢の中で、圧
電振動子に1刃しては、未だチップ化し/ζ製品が現わ
れていない。これは、圧1E振Q1子が本来非常鈍高い
安定度を要求される部品であるために基本的に不活性ガ
ス雰囲気または真空に保持し7たケースに封入されてい
るrs’j係上、チップ部品化が内錐なことによる。
In recent years, as electronic sailing equipment has generally become more compact, there has been a demand for smaller individual parts, and so-called chip parts, Jlτ・'I construction, have been widely used in various fields. There is. In fact, in such a situation, no single chip piezoelectric vibrator/ζ product has yet appeared. This is due to the fact that the pressure 1E vibration Q1 element is originally a component that requires extremely high stability, so it is basically kept in an inert gas atmosphere or vacuum and sealed in a case. This is due to the fact that the chip component is an inner cone.

本発明はこのような事情にFへみてなさ1したもので、
その目的は圧電振動子をチップ部品化を可能にする圧電
振動子用気密ベースを折供することにある。
The present invention was made in consideration of these circumstances.
The purpose is to provide an airtight base for a piezoelectric vibrator that enables the piezoelectric vibrator to be made into a chip component.

このような目的をゴ成するだめに、不発りIJr、j 
、、l:’を通水を有する絶縁性基板と、平坦部に上富
111通穴に嵌合する突起部を有する金属端子とをイi
疫−1上記突起部を絶縁性基板の貫通穴周囲に設けた金
属層に高温半田により接合して貫通穴を通しての通気性
を刊除したものである。
In order to achieve such a purpose, I Jr., j
,,l:' An insulating substrate that allows water to pass through, and a metal terminal that has a protrusion that fits into the Kamitomi 111 through hole on the flat part.
1) The protrusion is bonded to a metal layer provided around a through hole of an insulating substrate by high temperature solder to improve air permeability through the through hole.

以下、実施例を用いて本発明の詳細な説明する。Hereinafter, the present invention will be explained in detail using Examples.

第1図は、本発明の一実施例を構成する絶縁性基板を示
す斜視図であり、同図(11)はその」二面、すなわち
金属カンと側止してケースを構成した時に内側となる面
、同図(b)は下面を示す。この絶縁性基板11は、エ
ボギシ、フェノール等の耐熱性樹脂丑たはセラミック等
からなシ、貫通穴12を有している。外形寸法は現在広
く用いられつつある短冊状撮動子を収容できるように1
. OX 4 X 1 mriW度、貫通穴12の直径
は05咽である。同図(a)に示すように上面には貫通
穴12の周囲に半田付可能な金属層13を設けるととも
に、周縁部にも幅1− mm程度に金属層14が設けで
ある。一方、下面には貫通穴12を1個ずつ含む2つの
領域に分けて金属層15が設けてちる。これらの金属層
は、絶縁性基板11としてエポキシ樹脂等の樹脂基板で
構成する場合には表面に銅箔等を固着したいわゆるプリ
ント配線用基板を用い、これをフォトリソグラフィー法
によシバターニングすることによって、またセラミック
、Ii′l、:板を用いる」11合には当該基板に例え
ば銀パラジウム活をスクリーン印刷後焼付けるいわゆる
メタライズの手法により、所望の形状に形成できる。
FIG. 1 is a perspective view showing an insulating substrate constituting an embodiment of the present invention, and FIG. Figure (b) shows the bottom surface. This insulating substrate 11 is made of a heat-resistant resin such as epoxy resin or phenol, or ceramic, and has a through hole 12 therein. The external dimensions are set to 1 to accommodate the strip-shaped camera elements that are currently being widely used.
.. The diameter of the through hole 12 is 0.05 mm. As shown in FIG. 5A, a solderable metal layer 13 is provided on the upper surface around the through hole 12, and a metal layer 14 with a width of about 1 mm is also provided on the peripheral edge. On the other hand, a metal layer 15 is provided on the lower surface divided into two regions each including one through hole 12. When these metal layers are composed of a resin substrate such as epoxy resin as the insulating substrate 11, a so-called printed wiring board with copper foil or the like fixed to the surface is used, and this is patterned by photolithography. If a ceramic plate is used, a desired shape can be formed by a so-called metallization method in which, for example, silver-palladium active is screen-printed and then baked on the substrate.

第2図は、このような絶縁性基板と組合せて用いる金属
端子の描成例を示し、同図(a)はプレス抜きした金属
薄板21に直径040の短線の突起22をスポット溶接
したもの、同図(b)はプレス加工により突起23を含
めて一体成形した全屈薄板24かもなるものである。
Fig. 2 shows an example of drawing a metal terminal used in combination with such an insulating substrate, and Fig. 2 (a) shows a case in which a short line protrusion 22 with a diameter of 040 mm is spot welded to a pressed metal thin plate 21; The same figure (b) also consists of a fully bent thin plate 24 integrally molded including the protrusion 23 by press working.

第3図は、このような金属端イ、例えば同図(、)に示
したような端子を前記絶縁性基板11の貫通穴12にそ
れぞれ突起22を挿入して接合してなる気密ベースを示
すもので、第3図(n)は上面、同図(b)は下面を示
す。すなわち、突起22は下面側から挿入し、先端が上
面側に突出する。そこで、この突出部分で突起22は貫
通穴12の周囲に設けられた金属層13に半田付りする
。−力、平ju1部を構成する金h3薄板21は基板下
面の金属層15に半EJ、1利けする。この場合の半田
は後に組立て後の圧電振動子を装置用基板に実装する時
に溶融するのを防ぐだめ、融点が300℃以上の高温半
田を用いる。また半rti付けは、基板11の上下もし
くは下面のいずれか一方の側のみ行なっても、それが見
金であれば貫通穴12f:通しての通気性は排除される
が、半田層のピンホール発生等を考慮すると上下両面で
行なうことが信頼性向上の点で望ましい。半田付けの信
頼性をさらに増す方法としては、第4図のように貫通穴
12の側壁をメタライズ処理して金属層41を形成する
いわゆるスルーホールの手法がある。この場合には、同
図に示すように金属端子の突起22を基板11の」二面
から突出させなくても上下面の金属層を電気的に導通さ
せることができるだめ、その後の圧電素子のマウントが
容易となる。
FIG. 3 shows an airtight base made by joining such metal ends, for example, the terminals shown in FIG. 3(n) shows the top surface, and FIG. 3(b) shows the bottom surface. That is, the protrusion 22 is inserted from the lower surface side, and the tip protrudes toward the upper surface side. Therefore, the protrusion 22 is soldered to the metal layer 13 provided around the through hole 12 at this protruding portion. - The gold H3 thin plate 21 constituting the flat part is exposed to the metal layer 15 on the bottom surface of the substrate by half an EJ. In this case, high-temperature solder with a melting point of 300° C. or higher is used to prevent melting when the assembled piezoelectric vibrator is later mounted on a device substrate. In addition, even if semi-RTI bonding is performed only on either the upper or lower side or the lower surface of the board 11, if it is a swatch, ventilation through the through hole 12f is eliminated, but the pin hole in the solder layer Considering the possibility of occurrence, it is desirable to perform this on both the upper and lower surfaces in order to improve reliability. As a method for further increasing the reliability of soldering, there is a so-called through-hole method in which the side wall of the through hole 12 is metallized to form a metal layer 41, as shown in FIG. In this case, as shown in the figure, the metal layers on the upper and lower surfaces can be electrically connected without protruding the protrusions 22 of the metal terminals from the two sides of the substrate 11, so that the subsequent piezoelectric element Easy to mount.

第5図は、このような気密ベース51に、短冊状の圧電
素子52をマウントした構成を示す斜視図、第6図はこ
れに金属カンを封止して得られたチップ形の圧電振j%
子を示す断面図であり、vすえは水晶からなる圧電基板
53の両面に形成されだ゛電極54は、四、電性12(
着剤55によって金属層13に′電気的に接続される。
FIG. 5 is a perspective view showing a structure in which a rectangular piezoelectric element 52 is mounted on such an airtight base 51, and FIG. %
The electrodes 54 are formed on both sides of a piezoelectric substrate 53 made of crystal.
It is electrically connected to metal layer 13 by adhesive 55 .

56i1ニスペーサで、用電累°子52の振動部分が気
密ベース51の上面に接触するのを防ぐ。このように圧
電素子をマウントした後、金属カン61をかぶせ、不活
性ガスもしくは真空雰囲気中で絶縁性基オ及11の上面
周縁部の金属層14に熱圧階し對J)する。熱圧嫡につ
いては、周縁部の金属層14および金属カン61の縁部
にi%融点の半田を予イ:R:半田し、これらを不活性
ガスもしくはめぎ1!の雰囲気中で加圧加熱するか、ま
たは加圧レーザビーノー溶接することにとり容易に行な
える。
The 56i1 spacer prevents the vibrating part of the power regulator 52 from coming into contact with the upper surface of the airtight base 51. After the piezoelectric element is mounted in this manner, a metal can 61 is placed over the piezoelectric element, and an insulating group is applied to the metal layer 14 on the upper surface periphery of the insulating group 11 in an inert gas or vacuum atmosphere. For heat-pressing, solder with a melting point of i% is applied to the metal layer 14 on the periphery and the edge of the metal can 61, and these are soldered using an inert gas or an inert gas. This can be easily done by pressurizing and heating in an atmosphere of

第6図において、1(色j六十土ダ古A反11のj)J
さは10mm、金属幼子の平坦部を構成する金属薄板2
1は厚さが03爬、スペーサ56 B P3jさが0.
3mの金属片からなり基板上1Ti1の金RFA 13
に半田イ・」けされている。金属カン61を含め、全体
の厚さは31程度である。
In Figure 6, 1 (color j 60 earth da old A anti 11 j) J
Thin metal plate 2 with a diameter of 10 mm and forming the flat part of the metal infant.
1 has a thickness of 03 and a spacer of 56 B P3j.
1Ti1 gold RFA 13 on board consisting of 3m metal piece
It has been soldered. The total thickness including the metal can 61 is about 31 mm.

このようなチップ形出′1.充振動子を装置用プリント
配線基板に半)J]付けする際には、金属薄板21の下
面21aを介して行なわれる。すなわち、ペースト状の
半田を装置用基板と端子下面21aとの間に挾持し/i
−、うえで250℃の高温炉中を通過させることにより
容易に接合させることができる。しかし、このような設
備を保有しない場合には、第6図に示すような形状は取
扱いが容易とは言えない。
Such chip formation '1. When the charged vibrator is attached to the printed wiring board for the device, it is done through the lower surface 21a of the thin metal plate 21. That is, paste-like solder is sandwiched between the device board and the terminal lower surface 21a.
-, and then passed through a high-temperature furnace at 250°C to easily bond them. However, if such equipment is not available, the shape shown in FIG. 6 cannot be said to be easy to handle.

そこで第7図は、このような場合にも装置用プリント配
線Z板への接合が容易に行なえるようにした例であり、
金属端子の平坦部の先端部71を、基板11の端部から
外側へ05〜10個突出させたものである。し7Xがっ
て、実質的に長さ寸法は大きくなるが、との突出部分を
半田ゴテ笠を用いて装置用基板の所定の位啓へ半田伺け
すればよい。
Therefore, Fig. 7 shows an example in which bonding to the printed wiring Z board for the device can be easily performed even in such a case.
05 to 10 tip portions 71 of the flat portion of the metal terminal protrude outward from the end portion of the substrate 11. Therefore, the length dimension becomes substantially larger, but the protruding portion of 7X can be soldered to a predetermined position on the device board using a soldering iron cap.

なお、以上の説明は端子が2本の場合を例にして行なっ
たが、本発明の適用は端子の数によって制限されるもの
でないことは言う壕でもない。
Note that although the above description has been made using the case where there are two terminals as an example, it is needless to say that the application of the present invention is not limited by the number of terminals.

以上説明したように、本発明によれば貫通穴を有する絶
縁性基板と平坦部に」二記工″↑通水に嵌合する突起部
を南する金下1端子とを伊え、上記突起部を絶縁性基板
の貫通穴周囲にd?トけた金属層に半田付けしたことに
よシ、チップ形L(:布振動子の形成が可能となる。こ
の場合従来−穀の圧電振動子において用いられるガラス
を用いた気密ベースに比較してきわめて安価に形成でき
るとともに、貫通穴を半H]により完全にふさぐことで
71通穴を通しての通気性を排除し7、ケース内の気密
を見金に係長することができる。また金7)73端子の
平坦部を半田付けすることにより装償、用基板に確実に
接合するととができ、実ギ弓」二の1f又4かい・もき
わめて容易である。
As explained above, according to the present invention, an insulating substrate having a through hole and a metal lower terminal extending south of the protrusion that fits into the water passage are provided on the flat part, and the protrusion By soldering the part to the metal layer drilled around the through hole of the insulating substrate, it becomes possible to form a chip-shaped L (: cloth vibrator. It can be formed at a much lower cost than the airtight base made of glass that is used, and by completely blocking the through hole with a half-H hole, it eliminates air permeability through the hole. In addition, by soldering the flat part of the gold 7) 73 terminal, it can be reliably connected to the board for mounting, and it is extremely easy to connect it to the actual board. It is.

4 図”而の匍1ヤ、な説明 第1図(、)および(b)itJ:本発明の一実施例に
おりるイう1縁性基板の上面および下面を示す斜視図、
?′1工2図(、)および(+))はそれぞれ金属端子
の(〒7成例を示す斜視図、第3図(a)および(b)
は第1図の絶縁性−2jj板に第2図(a)の金l”+
 !’1M子を接合してなる気密ベースの上面および下
面を示す斜視図、第4図は貫通穴にメタライズ処理を、
’X!j L/た例を示す断面図、?+:’r 5図は
圧?f m L、子をマウントした状態を示す斜視図、
第6図は金矛ベカンを封止した状態を示す断面図、第7
図t;J、金属y・t1子を絶l:1.性基板の外方へ
突出させ/ζ例を示す斜視図である。
4. Explanation of Figure 1 (,) and (b) itJ: A perspective view showing the upper and lower surfaces of the edge board according to an embodiment of the present invention,
? Figures 1 and 2 (, ) and (+) are respectively perspective views showing examples of metal terminals (Figures 3 (a) and (b)).
is the gold l”+ of Fig. 2(a) on the insulating -2jj plate of Fig. 1.
! A perspective view showing the upper and lower surfaces of an airtight base made by joining '1M elements.
'X! j Cross-sectional view showing an example of L/? +:'r Is the 5th figure pressure? f m L, perspective view showing the child mounted state;
Figure 6 is a sectional view showing the sealed state of the golden spear, Figure 7
Figure t;J, metal y・t1 child l:1. FIG. 3 is a perspective view showing an example of a flexible substrate protruding outward;

11・・・・P3緑性基板、12・・・・貫通穴、1 
3  、 1 4  、 1 5   ・ ・ ・ ・
 金ス1ヒiA1.  21  、 24  ・ ・ 
・・金に4薄板、22.23・・・・突起、41・・・
・スルーホール処理による金P6層、51・・・・気密
ベース、71・・・・絶縁性基板から突出しだ金属端子
の先端部。
11...P3 green board, 12...through hole, 1
3 , 1 4 , 1 5 ・ ・ ・ ・
Gold Su1hi iA1. 21 , 24 ・ ・
...4 thin plates on gold, 22.23...protrusions, 41...
- Gold P6 layer by through-hole processing, 51... airtight base, 71... tip of metal terminal protruding from insulating substrate.

特許出Q人  キンセギ株式会社 代理人 山川政樹(tυ)1名) 第1図     第2図 第3図 第5図 第6図 第7図 1Patent issuer: Kinsegi Co., Ltd. Agent Masaki Yamakawa (tυ) 1 person) Figure 1 Figure 2 Figure 3 Figure 5 Figure 6 Figure 7 1

Claims (1)

【特許請求の範囲】 (+ l JY連通穴有しかつ少なくとも1面に」二記
貫通穴をfIflむ金属層を有する絶縁性基板と、平坦
部に突起を設けてなる金属端子とを備え、上記突起を貫
通穴に挿入するとともに金属層と高温半田により接合し
たことを特徴とする圧電振動子用気密ベース。 (2)貫通穴はその側11.文に金属層を付着してスル
ーホール処理が施されるとともに、当該貫通穴に挿入し
た突起部は、その先端が絶縁性基板の表面に突出しない
ことを’i′!l’徴とする1特許請求の範囲第1項記
載の圧電振動子用気密ベース。 (3)金属端子は、その平坦部の先端部が絶縁性基板の
端部から外方へ突出していることを特徴とする特許請求
の範囲第1項記載の圧電振動子用気密ベース。
[Scope of Claims] (+l JY) An insulating substrate having a metal layer having a communication hole and having two through holes fIfl on at least one surface, and a metal terminal having a protrusion on a flat part, An airtight base for a piezoelectric vibrator, characterized in that the protrusion is inserted into a through hole and is bonded to a metal layer using high-temperature solder. (2) The through hole is processed by attaching a metal layer to its side 11. The piezoelectric vibration according to claim 1, wherein the 'i'!l' sign is that the tip of the protrusion inserted into the through hole does not protrude onto the surface of the insulating substrate. (3) The piezoelectric vibrator according to claim 1, wherein the metal terminal has a flat end portion protruding outward from an end of the insulating substrate. Airtight base.
JP19442182A 1982-11-05 1982-11-05 Air-tight base for piezoelectric oscillator Pending JPS5985123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19442182A JPS5985123A (en) 1982-11-05 1982-11-05 Air-tight base for piezoelectric oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19442182A JPS5985123A (en) 1982-11-05 1982-11-05 Air-tight base for piezoelectric oscillator

Publications (1)

Publication Number Publication Date
JPS5985123A true JPS5985123A (en) 1984-05-17

Family

ID=16324320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19442182A Pending JPS5985123A (en) 1982-11-05 1982-11-05 Air-tight base for piezoelectric oscillator

Country Status (1)

Country Link
JP (1) JPS5985123A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS617124U (en) * 1984-06-20 1986-01-17 日本電波工業株式会社 Leadless piezoelectric vibrator
JPS62210712A (en) * 1986-03-12 1987-09-16 Reotetsuku:Kk Hermetic seal member for crystal resonator
JPS62193319U (en) * 1986-05-28 1987-12-09
JPH01135214A (en) * 1987-11-20 1989-05-26 Matsushima Kogyo Co Ltd Piezo-oscillator
JPH0188517U (en) * 1987-12-04 1989-06-12
JPH0191320U (en) * 1987-12-09 1989-06-15
JPH01153725U (en) * 1988-04-14 1989-10-23
JPH0229107A (en) * 1988-07-19 1990-01-31 Iida Sangyo Kk Surface acoustic wave device and its manufacture
JPH0286222U (en) * 1988-12-20 1990-07-09
JPH02228110A (en) * 1989-03-01 1990-09-11 Hirai Seimitsu:Kk Package structure of crystal resonator
JPH03240310A (en) * 1990-02-17 1991-10-25 Murata Mfg Co Ltd Piezoelectric resonator
JPH0546115U (en) * 1991-11-12 1993-06-18 株式会社大真空 Surface mount crystal unit
US5504460A (en) * 1987-02-27 1996-04-02 Seiko Epson Corporation Pressure seal type piezoelectric resonator
US5592130A (en) * 1987-02-27 1997-01-07 Seiko Epson Corporation Piezoelectric oscillator including a piezoelectric resonator with outer lead
US5607236A (en) * 1987-02-27 1997-03-04 Seiko Epson Corporation Quartz oscillator temperature sensor
US6960870B2 (en) 1997-07-29 2005-11-01 Seiko Epson Corporation Piezo-electric resonator and manufacturing method thereof
US6976295B2 (en) 1997-07-29 2005-12-20 Seiko Epson Corporation Method of manufacturing a piezoelectric device
JP2010187091A (en) * 2009-02-10 2010-08-26 Seiko Instruments Inc Method of manufacturing package, method of manufacturing piezoelectric vibrator, oscillator, electronic device, and radio controlled clock

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418294A (en) * 1977-07-11 1979-02-10 Nippon Denpa Kogyo Kk Piezooelectric vibrator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418294A (en) * 1977-07-11 1979-02-10 Nippon Denpa Kogyo Kk Piezooelectric vibrator

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS617124U (en) * 1984-06-20 1986-01-17 日本電波工業株式会社 Leadless piezoelectric vibrator
JPS62210712A (en) * 1986-03-12 1987-09-16 Reotetsuku:Kk Hermetic seal member for crystal resonator
JPS62193319U (en) * 1986-05-28 1987-12-09
US5504460A (en) * 1987-02-27 1996-04-02 Seiko Epson Corporation Pressure seal type piezoelectric resonator
US5607236A (en) * 1987-02-27 1997-03-04 Seiko Epson Corporation Quartz oscillator temperature sensor
US5592130A (en) * 1987-02-27 1997-01-07 Seiko Epson Corporation Piezoelectric oscillator including a piezoelectric resonator with outer lead
US5541557A (en) * 1987-02-27 1996-07-30 Seiko Epson Corporation Resin mold type piezoelectric resonator and resin mold type piezoelectric oscillator
JPH01135214A (en) * 1987-11-20 1989-05-26 Matsushima Kogyo Co Ltd Piezo-oscillator
JPH0188517U (en) * 1987-12-04 1989-06-12
JPH0191320U (en) * 1987-12-09 1989-06-15
JPH01153725U (en) * 1988-04-14 1989-10-23
JPH0229107A (en) * 1988-07-19 1990-01-31 Iida Sangyo Kk Surface acoustic wave device and its manufacture
JPH0286222U (en) * 1988-12-20 1990-07-09
JPH02228110A (en) * 1989-03-01 1990-09-11 Hirai Seimitsu:Kk Package structure of crystal resonator
JPH03240310A (en) * 1990-02-17 1991-10-25 Murata Mfg Co Ltd Piezoelectric resonator
JPH0546115U (en) * 1991-11-12 1993-06-18 株式会社大真空 Surface mount crystal unit
US6960870B2 (en) 1997-07-29 2005-11-01 Seiko Epson Corporation Piezo-electric resonator and manufacturing method thereof
US6976295B2 (en) 1997-07-29 2005-12-20 Seiko Epson Corporation Method of manufacturing a piezoelectric device
JP2010187091A (en) * 2009-02-10 2010-08-26 Seiko Instruments Inc Method of manufacturing package, method of manufacturing piezoelectric vibrator, oscillator, electronic device, and radio controlled clock

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