JPS598072B2 - 絶縁ゲ−ト型電界効果トランジスタ回路 - Google Patents

絶縁ゲ−ト型電界効果トランジスタ回路

Info

Publication number
JPS598072B2
JPS598072B2 JP49120503A JP12050374A JPS598072B2 JP S598072 B2 JPS598072 B2 JP S598072B2 JP 49120503 A JP49120503 A JP 49120503A JP 12050374 A JP12050374 A JP 12050374A JP S598072 B2 JPS598072 B2 JP S598072B2
Authority
JP
Japan
Prior art keywords
transistor
capacitive element
gate
potential
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49120503A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5146087A (enExample
Inventor
俊男 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP49120503A priority Critical patent/JPS598072B2/ja
Publication of JPS5146087A publication Critical patent/JPS5146087A/ja
Publication of JPS598072B2 publication Critical patent/JPS598072B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
JP49120503A 1974-10-18 1974-10-18 絶縁ゲ−ト型電界効果トランジスタ回路 Expired JPS598072B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49120503A JPS598072B2 (ja) 1974-10-18 1974-10-18 絶縁ゲ−ト型電界効果トランジスタ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49120503A JPS598072B2 (ja) 1974-10-18 1974-10-18 絶縁ゲ−ト型電界効果トランジスタ回路

Publications (2)

Publication Number Publication Date
JPS5146087A JPS5146087A (enExample) 1976-04-20
JPS598072B2 true JPS598072B2 (ja) 1984-02-22

Family

ID=14787796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49120503A Expired JPS598072B2 (ja) 1974-10-18 1974-10-18 絶縁ゲ−ト型電界効果トランジスタ回路

Country Status (1)

Country Link
JP (1) JPS598072B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273489A (ja) * 1985-09-25 1987-04-04 Mitsubishi Electric Corp 不揮発性半導体記憶装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS573159B2 (enExample) * 1973-12-05 1982-01-20
US3877058A (en) * 1973-12-13 1975-04-08 Westinghouse Electric Corp Radiation charge transfer memory device
JPS518881A (en) * 1974-07-10 1976-01-24 Sanyo Electric Co Mos gatahandotaishusekikairo

Also Published As

Publication number Publication date
JPS5146087A (enExample) 1976-04-20

Similar Documents

Publication Publication Date Title
US7193893B2 (en) Write once read only memory employing floating gates
US6370056B1 (en) Ferroelectric memory and method of operating same
US4527257A (en) Common memory gate non-volatile transistor memory
US4924278A (en) EEPROM using a merged source and control gate
US4432072A (en) Non-volatile dynamic RAM cell
US5521866A (en) Non-volatile semiconductor memory device having floating gate
US20030234420A1 (en) Write once read only memory with large work function floating gates
US4363110A (en) Non-volatile dynamic RAM cell
US5181188A (en) Semiconductor memory device
JPS5857839B2 (ja) フキハツセイキオクキニタイスル ダイナミツクタントランジスタキオクソシ
JP2007123830A (ja) 不揮発性半導体記憶装置
US4630238A (en) Semiconductor memory device
US6421272B1 (en) Non-volatile semiconductor memory device
US3706891A (en) A. c. stable storage cell
US4375085A (en) Dense electrically alterable read only memory
US4446535A (en) Non-inverting non-volatile dynamic RAM cell
JPS62154786A (ja) 不揮発性半導体メモリ
JPS598072B2 (ja) 絶縁ゲ−ト型電界効果トランジスタ回路
JPH07120723B2 (ja) 半導体不揮発性メモリデバイス
JPH0137854B2 (enExample)
JPH031759B2 (enExample)
JP2817223B2 (ja) 不揮発性半導体メモリ
US5617352A (en) Non-volatile, bidirectional, electrically programmable integrated memory element implemented using double polysilicon
JP3856736B2 (ja) 不揮発性半導体記憶装置、およびその駆動方法
JPH039559B2 (enExample)