JPS5978527A - 構成上変化した材料ならびにこれら材料の製造方法および装置 - Google Patents
構成上変化した材料ならびにこれら材料の製造方法および装置Info
- Publication number
- JPS5978527A JPS5978527A JP58176098A JP17609883A JPS5978527A JP S5978527 A JPS5978527 A JP S5978527A JP 58176098 A JP58176098 A JP 58176098A JP 17609883 A JP17609883 A JP 17609883A JP S5978527 A JPS5978527 A JP S5978527A
- Authority
- JP
- Japan
- Prior art keywords
- atoms
- type
- atom
- groups
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims description 95
- 238000000034 method Methods 0.000 title claims description 31
- 239000000126 substance Substances 0.000 claims description 49
- 239000000203 mixture Substances 0.000 claims description 18
- 230000000704 physical effect Effects 0.000 claims description 17
- 230000008859 change Effects 0.000 claims description 15
- 230000000737 periodic effect Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- LFVLUOAHQIVABZ-UHFFFAOYSA-N Iodofenphos Chemical compound COP(=S)(OC)OC1=CC(Cl)=C(I)C=C1Cl LFVLUOAHQIVABZ-UHFFFAOYSA-N 0.000 claims description 5
- 241000894007 species Species 0.000 claims description 5
- 230000000007 visual effect Effects 0.000 claims 2
- 241000531897 Loma Species 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 52
- 230000000694 effects Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 241000257465 Echinoidea Species 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000001788 irregular Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000002178 crystalline material Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 3
- 235000017491 Bambusa tulda Nutrition 0.000 description 3
- 241001330002 Bambuseae Species 0.000 description 3
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000011425 bamboo Substances 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 241000282693 Cercopithecidae Species 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010411 cooking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 241000272814 Anser sp. Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910017263 Mo—C Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004774 atomic orbital Methods 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000009878 intermolecular interaction Effects 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Light Receiving Elements (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/422,155 US4520039A (en) | 1982-09-23 | 1982-09-23 | Compositionally varied materials and method for synthesizing the materials |
| US422155 | 1995-04-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5978527A true JPS5978527A (ja) | 1984-05-07 |
Family
ID=23673622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58176098A Pending JPS5978527A (ja) | 1982-09-23 | 1983-09-22 | 構成上変化した材料ならびにこれら材料の製造方法および装置 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4520039A (enExample) |
| EP (1) | EP0107356A3 (enExample) |
| JP (1) | JPS5978527A (enExample) |
| AU (1) | AU560015B2 (enExample) |
| BR (1) | BR8305221A (enExample) |
| CA (1) | CA1216133A (enExample) |
| EG (1) | EG15982A (enExample) |
| IL (1) | IL69755A (enExample) |
| IN (1) | IN162125B (enExample) |
| MX (1) | MX159572A (enExample) |
| ZA (1) | ZA837014B (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4642144A (en) * | 1983-10-06 | 1987-02-10 | Exxon Research And Engineering Company | Proximity doping of amorphous semiconductors |
| US4738135A (en) * | 1986-12-15 | 1988-04-19 | Ramsey Engineering Company | Method and apparatus for in situ assemblage of a strain sensor in erected structural elements |
| GB8719794D0 (en) * | 1987-08-21 | 1987-09-30 | Scient Coatings Uk Ltd | Depositing surface layers on substrates |
| US5200805A (en) * | 1987-12-28 | 1993-04-06 | Hughes Aircraft Company | Silicon carbide:metal carbide alloy semiconductor and method of making the same |
| US5536591A (en) | 1990-04-26 | 1996-07-16 | Ovonic Battery Company, Inc. | Electrochemical hydrogen storage alloys for nickel metal hydride batteries |
| GEP20002074B (en) * | 1992-05-19 | 2000-05-10 | Westaim Tech Inc Ca | Modified Material and Method for its Production |
| US5681575A (en) * | 1992-05-19 | 1997-10-28 | Westaim Technologies Inc. | Anti-microbial coating for medical devices |
| EP1305838B8 (en) * | 2000-03-24 | 2007-10-03 | Cymbet Corporation | Low-temperature fabrication of thin-film energy-storage devices |
| US6906436B2 (en) * | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
| US20040131760A1 (en) * | 2003-01-02 | 2004-07-08 | Stuart Shakespeare | Apparatus and method for depositing material onto multiple independently moving substrates in a chamber |
| US7603144B2 (en) * | 2003-01-02 | 2009-10-13 | Cymbet Corporation | Active wireless tagging system on peel and stick substrate |
| US7294209B2 (en) * | 2003-01-02 | 2007-11-13 | Cymbet Corporation | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask |
| US7250386B2 (en) * | 2003-07-18 | 2007-07-31 | Energy Conversion Devices, Inc. | Quantum limit catalysts and hydrogen storage materials |
| US7211351B2 (en) | 2003-10-16 | 2007-05-01 | Cymbet Corporation | Lithium/air batteries with LiPON as separator and protective barrier and method |
| KR20070024473A (ko) * | 2004-01-06 | 2007-03-02 | 사임베트 코퍼레이션 | 층상 배리어구조와 그 형성방법 |
| WO2007011898A2 (en) * | 2005-07-15 | 2007-01-25 | Cymbet Corporation | Apparatus and method for making thin-film batteries with soft and hard electrolyte layers |
| US7776478B2 (en) * | 2005-07-15 | 2010-08-17 | Cymbet Corporation | Thin-film batteries with polymer and LiPON electrolyte layers and method |
| US8538529B2 (en) * | 2006-04-26 | 2013-09-17 | Cardiac Pacemakers, Inc. | Power converter for use with implantable thermoelectric generator |
| US8003879B2 (en) | 2006-04-26 | 2011-08-23 | Cardiac Pacemakers, Inc. | Method and apparatus for in vivo thermoelectric power system |
| US8039727B2 (en) * | 2006-04-26 | 2011-10-18 | Cardiac Pacemakers, Inc. | Method and apparatus for shunt for in vivo thermoelectric power system |
| US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
| US11996517B2 (en) | 2011-06-29 | 2024-05-28 | Space Charge, LLC | Electrochemical energy storage devices |
| US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| EP3762989A4 (en) | 2018-03-07 | 2021-12-15 | Space Charge, LLC | THIN FILM SOLID STATE ENERGY STORAGE DEVICES |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3117022A (en) * | 1960-09-06 | 1964-01-07 | Space Technhology Lab Inc | Deposition arrangement |
| BE620882A (enExample) * | 1961-05-08 | |||
| US3218203A (en) * | 1961-10-09 | 1965-11-16 | Monsanto Co | Altering proportions in vapor deposition process to form a mixed crystal graded energy gap |
| US3434894A (en) * | 1965-10-06 | 1969-03-25 | Ion Physics Corp | Fabricating solid state devices by ion implantation |
| US3573098A (en) * | 1968-05-09 | 1971-03-30 | Boeing Co | Ion beam deposition unit |
| US3682729A (en) * | 1969-12-30 | 1972-08-08 | Ibm | Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby |
| US3734769A (en) * | 1970-08-06 | 1973-05-22 | T Hirschfeld | Method of forming microelements |
| US3751310A (en) * | 1971-03-25 | 1973-08-07 | Bell Telephone Labor Inc | Germanium doped epitaxial films by the molecular beam method |
| SE393967B (sv) * | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
| US4177474A (en) * | 1977-05-18 | 1979-12-04 | Energy Conversion Devices, Inc. | High temperature amorphous semiconductor member and method of making the same |
| US4177473A (en) * | 1977-05-18 | 1979-12-04 | Energy Conversion Devices, Inc. | Amorphous semiconductor member and method of making the same |
| US4342044A (en) * | 1978-03-08 | 1982-07-27 | Energy Conversion Devices, Inc. | Method for optimizing photoresponsive amorphous alloys and devices |
| US4293621A (en) * | 1978-10-12 | 1981-10-06 | Nippon Hoso Kyokai | Recording medium |
| FI57975C (fi) * | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
| US4261771A (en) * | 1979-10-31 | 1981-04-14 | Bell Telephone Laboratories, Incorporated | Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy |
| DE3000305C2 (de) * | 1980-01-05 | 1982-12-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen eines elektrophotographischen Aufzeichnungsmaterials |
| US4389973A (en) * | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
| US4336118A (en) * | 1980-03-21 | 1982-06-22 | Battelle Memorial Institute | Methods for making deposited films with improved microstructures |
-
1982
- 1982-09-23 US US06/422,155 patent/US4520039A/en not_active Expired - Lifetime
-
1983
- 1983-09-16 IL IL69755A patent/IL69755A/xx unknown
- 1983-09-21 ZA ZA837014A patent/ZA837014B/xx unknown
- 1983-09-21 EG EG578/83A patent/EG15982A/xx active
- 1983-09-22 JP JP58176098A patent/JPS5978527A/ja active Pending
- 1983-09-22 AU AU19384/83A patent/AU560015B2/en not_active Ceased
- 1983-09-23 MX MX198813A patent/MX159572A/es unknown
- 1983-09-23 BR BR8305221A patent/BR8305221A/pt unknown
- 1983-09-23 CA CA000437432A patent/CA1216133A/en not_active Expired
- 1983-09-23 EP EP83305678A patent/EP0107356A3/en not_active Withdrawn
- 1983-09-24 IN IN1168/CAL/83A patent/IN162125B/en unknown
Non-Patent Citations (1)
| Title |
|---|
| IEEE TECHNICAL DIGEST=1980 * |
Also Published As
| Publication number | Publication date |
|---|---|
| IL69755A (en) | 1986-12-31 |
| IN162125B (enExample) | 1988-04-02 |
| US4520039A (en) | 1985-05-28 |
| EP0107356A2 (en) | 1984-05-02 |
| AU1938483A (en) | 1984-04-12 |
| AU560015B2 (en) | 1987-03-26 |
| MX159572A (es) | 1989-07-06 |
| IL69755A0 (en) | 1983-12-30 |
| ZA837014B (en) | 1984-05-30 |
| EP0107356A3 (en) | 1986-11-26 |
| EG15982A (en) | 1987-10-30 |
| BR8305221A (pt) | 1984-05-02 |
| CA1216133A (en) | 1987-01-06 |
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