CA1216133A - Compositionally varied materials and method for synthesizing the materials - Google Patents

Compositionally varied materials and method for synthesizing the materials

Info

Publication number
CA1216133A
CA1216133A CA000437432A CA437432A CA1216133A CA 1216133 A CA1216133 A CA 1216133A CA 000437432 A CA000437432 A CA 000437432A CA 437432 A CA437432 A CA 437432A CA 1216133 A CA1216133 A CA 1216133A
Authority
CA
Canada
Prior art keywords
matrix
type
atom
atoms
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000437432A
Other languages
English (en)
French (fr)
Inventor
Stanford R. Ovshinsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of CA1216133A publication Critical patent/CA1216133A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • C30B23/04Pattern deposit, e.g. by using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/52Alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Light Receiving Elements (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
CA000437432A 1982-09-23 1983-09-23 Compositionally varied materials and method for synthesizing the materials Expired CA1216133A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/422,155 US4520039A (en) 1982-09-23 1982-09-23 Compositionally varied materials and method for synthesizing the materials
US422,155 1982-09-23

Publications (1)

Publication Number Publication Date
CA1216133A true CA1216133A (en) 1987-01-06

Family

ID=23673622

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000437432A Expired CA1216133A (en) 1982-09-23 1983-09-23 Compositionally varied materials and method for synthesizing the materials

Country Status (11)

Country Link
US (1) US4520039A (enExample)
EP (1) EP0107356A3 (enExample)
JP (1) JPS5978527A (enExample)
AU (1) AU560015B2 (enExample)
BR (1) BR8305221A (enExample)
CA (1) CA1216133A (enExample)
EG (1) EG15982A (enExample)
IL (1) IL69755A (enExample)
IN (1) IN162125B (enExample)
MX (1) MX159572A (enExample)
ZA (1) ZA837014B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4642144A (en) * 1983-10-06 1987-02-10 Exxon Research And Engineering Company Proximity doping of amorphous semiconductors
US4738135A (en) * 1986-12-15 1988-04-19 Ramsey Engineering Company Method and apparatus for in situ assemblage of a strain sensor in erected structural elements
GB8719794D0 (en) * 1987-08-21 1987-09-30 Scient Coatings Uk Ltd Depositing surface layers on substrates
US5200805A (en) * 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same
US5536591A (en) 1990-04-26 1996-07-16 Ovonic Battery Company, Inc. Electrochemical hydrogen storage alloys for nickel metal hydride batteries
GEP20002074B (en) * 1992-05-19 2000-05-10 Westaim Tech Inc Ca Modified Material and Method for its Production
US5681575A (en) * 1992-05-19 1997-10-28 Westaim Technologies Inc. Anti-microbial coating for medical devices
EP1305838B8 (en) * 2000-03-24 2007-10-03 Cymbet Corporation Low-temperature fabrication of thin-film energy-storage devices
US6906436B2 (en) * 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US20040131760A1 (en) * 2003-01-02 2004-07-08 Stuart Shakespeare Apparatus and method for depositing material onto multiple independently moving substrates in a chamber
US7603144B2 (en) * 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
US7294209B2 (en) * 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US7250386B2 (en) * 2003-07-18 2007-07-31 Energy Conversion Devices, Inc. Quantum limit catalysts and hydrogen storage materials
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
KR20070024473A (ko) * 2004-01-06 2007-03-02 사임베트 코퍼레이션 층상 배리어구조와 그 형성방법
WO2007011898A2 (en) * 2005-07-15 2007-01-25 Cymbet Corporation Apparatus and method for making thin-film batteries with soft and hard electrolyte layers
US7776478B2 (en) * 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
US8538529B2 (en) * 2006-04-26 2013-09-17 Cardiac Pacemakers, Inc. Power converter for use with implantable thermoelectric generator
US8003879B2 (en) 2006-04-26 2011-08-23 Cardiac Pacemakers, Inc. Method and apparatus for in vivo thermoelectric power system
US8039727B2 (en) * 2006-04-26 2011-10-18 Cardiac Pacemakers, Inc. Method and apparatus for shunt for in vivo thermoelectric power system
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US11996517B2 (en) 2011-06-29 2024-05-28 Space Charge, LLC Electrochemical energy storage devices
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
EP3762989A4 (en) 2018-03-07 2021-12-15 Space Charge, LLC THIN FILM SOLID STATE ENERGY STORAGE DEVICES

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3117022A (en) * 1960-09-06 1964-01-07 Space Technhology Lab Inc Deposition arrangement
BE620882A (enExample) * 1961-05-08
US3218203A (en) * 1961-10-09 1965-11-16 Monsanto Co Altering proportions in vapor deposition process to form a mixed crystal graded energy gap
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US3573098A (en) * 1968-05-09 1971-03-30 Boeing Co Ion beam deposition unit
US3682729A (en) * 1969-12-30 1972-08-08 Ibm Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby
US3734769A (en) * 1970-08-06 1973-05-22 T Hirschfeld Method of forming microelements
US3751310A (en) * 1971-03-25 1973-08-07 Bell Telephone Labor Inc Germanium doped epitaxial films by the molecular beam method
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4177474A (en) * 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. High temperature amorphous semiconductor member and method of making the same
US4177473A (en) * 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. Amorphous semiconductor member and method of making the same
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US4293621A (en) * 1978-10-12 1981-10-06 Nippon Hoso Kyokai Recording medium
FI57975C (fi) * 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
DE3000305C2 (de) * 1980-01-05 1982-12-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines elektrophotographischen Aufzeichnungsmaterials
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4336118A (en) * 1980-03-21 1982-06-22 Battelle Memorial Institute Methods for making deposited films with improved microstructures

Also Published As

Publication number Publication date
IL69755A (en) 1986-12-31
IN162125B (enExample) 1988-04-02
US4520039A (en) 1985-05-28
EP0107356A2 (en) 1984-05-02
AU1938483A (en) 1984-04-12
AU560015B2 (en) 1987-03-26
MX159572A (es) 1989-07-06
IL69755A0 (en) 1983-12-30
ZA837014B (en) 1984-05-30
EP0107356A3 (en) 1986-11-26
JPS5978527A (ja) 1984-05-07
EG15982A (en) 1987-10-30
BR8305221A (pt) 1984-05-02

Similar Documents

Publication Publication Date Title
CA1216133A (en) Compositionally varied materials and method for synthesizing the materials
US4664960A (en) Compositionally varied materials and method for synthesizing the materials
Li et al. Spontaneous assembly of perfectly ordered identical-size nanocluster arrays
US4569697A (en) Method of forming photovoltaic quality amorphous alloys by passivating defect states
De Jongh Physics and chemistry of metal cluster compounds: model systems for small metal particles
US20020175330A1 (en) Method of forming three-dimensional photonic band structures in solid materials
JPS6230511B2 (enExample)
US5682041A (en) Electronic part incorporating artificial super lattice
JPH02162717A (ja) 量子細線の形成方法
US5380595A (en) Carbon cluster film having electrical conductivity and method of preparing the same
Chiu et al. Magic numbers of atoms in surface-supported planar clusters
KR102056705B1 (ko) 대용량 cvd 장치
US5298108A (en) Serpentine superlattice methods and devices
JPH01144617A (ja) 歪み層超格子構造の連続成長方法
JP2002537202A (ja) 組み合わせ分子線エピタキシー(combe)装置を使用するライブラリの調製方法
KR102730369B1 (ko) 원자층 증착 공정을 이용한 칼코게나이드계 물질층의 형성 방법, 이를 적용한 상변화 메모리 소자의 제조 방법 및 상변화 메모리 소자
Matsumura et al. Ordered Structures and Phase States in Epitaxial Layers of III–V Semiconductor Alloys
KR20210133839A (ko) 고온초전도 선재 제조장치 및 방법
DE102020101066A1 (de) CVD-Reaktor mit doppelter Vorlaufzonenplatte
JP3250262B2 (ja) 疑似分子性結晶及びその製造方法並びに製造装置
JP7131474B2 (ja) ダイヤモンド層の製造方法
Pavlov Implantation phases in solids
EP0381735B1 (en) Design and fabrication of synthetic superconductors
US6790322B2 (en) Production of material libraries using sputter methods
KR102848164B1 (ko) 쌍정결함이 제거된 단결정 다이아몬드기판 및 이의 제조방법

Legal Events

Date Code Title Description
MKEX Expiry