JPS5976875A - マグネトロン型スパッタ装置とそれに用いるターゲット - Google Patents

マグネトロン型スパッタ装置とそれに用いるターゲット

Info

Publication number
JPS5976875A
JPS5976875A JP57184577A JP18457782A JPS5976875A JP S5976875 A JPS5976875 A JP S5976875A JP 57184577 A JP57184577 A JP 57184577A JP 18457782 A JP18457782 A JP 18457782A JP S5976875 A JPS5976875 A JP S5976875A
Authority
JP
Japan
Prior art keywords
target
anode
magnetron type
shield
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57184577A
Other languages
English (en)
Japanese (ja)
Other versions
JPH021909B2 (OSRAM
Inventor
Hideji Kiyota
清田　秀治
Mitsuaki Horiuchi
光明 堀内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57184577A priority Critical patent/JPS5976875A/ja
Priority to FR8312887A priority patent/FR2535109A1/fr
Priority to KR1019830004180A priority patent/KR840006557A/ko
Priority to IT8323382A priority patent/IT1169862B/it
Priority to DE19833338377 priority patent/DE3338377A1/de
Priority to GB08328208A priority patent/GB2129021B/en
Publication of JPS5976875A publication Critical patent/JPS5976875A/ja
Priority to US06/673,928 priority patent/US4547279A/en
Priority to SG879/87A priority patent/SG87987G/en
Priority to MY801/87A priority patent/MY8700801A/xx
Priority to HK4/88A priority patent/HK488A/xx
Publication of JPH021909B2 publication Critical patent/JPH021909B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Helmets And Other Head Coverings (AREA)
JP57184577A 1982-10-22 1982-10-22 マグネトロン型スパッタ装置とそれに用いるターゲット Granted JPS5976875A (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP57184577A JPS5976875A (ja) 1982-10-22 1982-10-22 マグネトロン型スパッタ装置とそれに用いるターゲット
FR8312887A FR2535109A1 (fr) 1982-10-22 1983-08-04 Appareil de pulverisation, utilisable notamment pour la fabrication des dispositifs a semi-conducteurs
KR1019830004180A KR840006557A (ko) 1982-10-22 1983-09-06 스팟타링장치
IT8323382A IT1169862B (it) 1982-10-22 1983-10-20 Apparecchiatura di vaporizzazione ionica
GB08328208A GB2129021B (en) 1982-10-22 1983-10-21 Sputtering apparatus
DE19833338377 DE3338377A1 (de) 1982-10-22 1983-10-21 Sputtervorrichtung
US06/673,928 US4547279A (en) 1982-10-22 1984-11-21 Sputtering apparatus
SG879/87A SG87987G (en) 1982-10-22 1987-10-12 Sputtering apparatus
MY801/87A MY8700801A (en) 1982-10-22 1987-12-30 Sputtering apparatus
HK4/88A HK488A (en) 1982-10-22 1988-01-07 Sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57184577A JPS5976875A (ja) 1982-10-22 1982-10-22 マグネトロン型スパッタ装置とそれに用いるターゲット

Publications (2)

Publication Number Publication Date
JPS5976875A true JPS5976875A (ja) 1984-05-02
JPH021909B2 JPH021909B2 (OSRAM) 1990-01-16

Family

ID=16155636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57184577A Granted JPS5976875A (ja) 1982-10-22 1982-10-22 マグネトロン型スパッタ装置とそれに用いるターゲット

Country Status (10)

Country Link
US (1) US4547279A (OSRAM)
JP (1) JPS5976875A (OSRAM)
KR (1) KR840006557A (OSRAM)
DE (1) DE3338377A1 (OSRAM)
FR (1) FR2535109A1 (OSRAM)
GB (1) GB2129021B (OSRAM)
HK (1) HK488A (OSRAM)
IT (1) IT1169862B (OSRAM)
MY (1) MY8700801A (OSRAM)
SG (1) SG87987G (OSRAM)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318070A (ja) * 1986-04-04 1988-01-25 マテリアルズ　リサ−チ　コ−ポレイシヨン スパッタ陰極一標的アセンブリ
JPH0246854U (OSRAM) * 1988-09-19 1990-03-30
JPH03138361A (ja) * 1989-10-20 1991-06-12 Tokyo Electron Ltd スパッタ用ターゲット及びスパッタ方法
JPH03191058A (ja) * 1989-12-19 1991-08-21 Toshiba Corp スパッタリング装置
KR19990023327A (ko) * 1997-08-05 1999-03-25 토마스 엠. 알바레즈 제 1 및 제 2 재료를 기판상에 증착하는 장치 및 방법
JP2012525503A (ja) * 2009-04-28 2012-10-22 フェローテック（ユーエスエー）コーポレイション 円錐型蒸着チャンバにおける密度最適化のためのｈｕｌａ基板ホルダを特徴とする、リフトオフ蒸着システム

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL185372C (nl) * 1980-02-18 1990-03-16 Teco Societe Anonyme Meerpolige elektrische veiligheidsschakelaar.
FR2476384B1 (fr) * 1980-02-18 1985-11-29 Teco Sa Perfectionnements a un disjoncteur de securite a enclenchement manuel et a organes de deverrouillage magnetiques et thermiques
US4515675A (en) * 1983-07-06 1985-05-07 Leybold-Heraeus Gmbh Magnetron cathode for cathodic evaportion apparatus
NL8402012A (nl) * 1983-07-19 1985-02-18 Varian Associates Magnetron spetter deklaag opbrengbron voor zowel magnetische als niet-magnetische trefplaatmaterialen.
DE3442206A1 (de) * 1983-12-05 1985-07-11 Leybold-Heraeus GmbH, 5000 Köln Magnetronkatode zum zerstaeuben ferromagnetischer targets
US4486287A (en) * 1984-02-06 1984-12-04 Fournier Paul R Cross-field diode sputtering target assembly
US4569746A (en) * 1984-05-17 1986-02-11 Varian Associates, Inc. Magnetron sputter device using the same pole piece for coupling separate confining magnetic fields to separate targets subject to separate discharges
US4606806A (en) * 1984-05-17 1986-08-19 Varian Associates, Inc. Magnetron sputter device having planar and curved targets
US4661228A (en) * 1984-05-17 1987-04-28 Varian Associates, Inc. Apparatus and method for manufacturing planarized aluminum films
US4627904A (en) * 1984-05-17 1986-12-09 Varian Associates, Inc. Magnetron sputter device having separate confining magnetic fields to separate targets and magnetically enhanced R.F. bias
DE163445T1 (de) * 1984-05-17 1986-05-22 Varian Associates, Inc., Palo Alto, Calif. Magnetron-zerstaeubungs-vorrichtung mit ebenen und konkaven auftreffplatten.
US4610774A (en) * 1984-11-14 1986-09-09 Hitachi, Ltd. Target for sputtering
JPS61183467A (ja) * 1985-02-08 1986-08-16 Hitachi Ltd スパッタリング方法及びその装置
US4855033A (en) * 1986-04-04 1989-08-08 Materials Research Corporation Cathode and target design for a sputter coating apparatus
US4834860A (en) * 1987-07-01 1989-05-30 The Boc Group, Inc. Magnetron sputtering targets
GB2209769A (en) * 1987-09-16 1989-05-24 Ion Tech Ltd Sputter coating
DE3919147C2 (de) * 1989-06-12 1998-01-15 Leybold Ag Verfahren zum Beschichten eines Kunststoffsubstrats mit Aluminium
US5403663A (en) * 1989-06-12 1995-04-04 Leybold Aktiengesellschaft Process for coating a polycarbonate substrate with an aluminum-silicon alloy
JPH0733576B2 (ja) * 1989-11-29 1995-04-12 株式会社日立製作所 スパツタ装置、及びターゲツト交換装置、並びにその交換方法
US5080772A (en) * 1990-08-24 1992-01-14 Materials Research Corporation Method of improving ion flux distribution uniformity on a substrate
JPH04114210U (ja) * 1991-03-26 1992-10-07 日立化成工業株式会社 平面アンテナのハウジング構造
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
DE9217937U1 (de) * 1992-01-29 1993-04-01 Leybold AG, 6450 Hanau Vorrichtung zur Kathodenzerstäubung
US6605198B1 (en) * 1993-07-22 2003-08-12 Sputtered Films, Inc. Apparatus for, and method of, depositing a film on a substrate
KR100321536B1 (ko) * 1993-12-28 2002-06-20 히가시 데쓰로 자전관스퍼터링또는자전관에칭용쌍극자고리자석
EP0704878A1 (en) * 1994-09-27 1996-04-03 Applied Materials, Inc. Uniform film thickness deposition of sputtered materials
US5697827A (en) * 1996-01-11 1997-12-16 Rabinowitz; Mario Emissive flat panel display with improved regenerative cathode
USD400511S (en) 1996-03-21 1998-11-03 Applied Materials, Inc. Magnet structure for a conical target
GB9606920D0 (en) * 1996-04-02 1996-06-05 Applied Vision Ltd Magnet array for magnetrons
DE19614595A1 (de) * 1996-04-13 1997-10-16 Singulus Technologies Gmbh Vorrichtung zur Kathodenzerstäubung
DE19614598A1 (de) * 1996-04-13 1997-10-16 Singulus Technologies Gmbh Vorrichtung zur Kathodenzerstäubung
US5863399A (en) * 1996-04-13 1999-01-26 Singulus Technologies Gmbh Device for cathode sputtering
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US5985115A (en) 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
TW460599B (en) * 1998-01-14 2001-10-21 Toshiba Corp Method for forming fine wiring pattern
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
JP2000098582A (ja) * 1998-09-17 2000-04-07 Ulvac Seimaku Kk 位相シフトフォトマスクブランクス、位相シフトフォトマスク及びそれらの製造方法、並びに該ブランクスの製造装置
US6783638B2 (en) 2001-09-07 2004-08-31 Sputtered Films, Inc. Flat magnetron
US6846396B2 (en) * 2002-08-08 2005-01-25 Applied Materials, Inc. Active magnetic shielding
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
US20090246385A1 (en) * 2008-03-25 2009-10-01 Tegal Corporation Control of crystal orientation and stress in sputter deposited thin films
US8808513B2 (en) * 2008-03-25 2014-08-19 Oem Group, Inc Stress adjustment in reactive sputtering
US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
JP6244103B2 (ja) 2012-05-04 2017-12-06 ヴァイアヴィ・ソリューションズ・インコーポレイテッドＶｉａｖｉ Ｓｏｌｕｔｉｏｎｓ Ｉｎｃ． 反応性スパッタ堆積のための方法および反応性スパッタ堆積システム
JP5343162B1 (ja) * 2012-10-26 2013-11-13 エピクルー株式会社 エピタキシャル成長装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416385A (en) * 1977-06-10 1979-02-06 Varian Associates Target profile for sputtering apparatus

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046659A (en) * 1974-05-10 1977-09-06 Airco, Inc. Method for coating a substrate
US4060470A (en) * 1974-12-06 1977-11-29 Clarke Peter J Sputtering apparatus and method
US4169031A (en) * 1978-01-13 1979-09-25 Polyohm, Inc. Magnetron sputter cathode assembly
US4219397A (en) * 1978-11-24 1980-08-26 Clarke Peter J Magnetron sputter apparatus
HU179482B (en) * 1979-02-19 1982-10-28 Mikroelektronikai Valalat Penning pulverizel source
GB2058143B (en) * 1979-07-31 1983-11-02 Nordiko Ltd Sputtering electrodes
US4457825A (en) * 1980-05-16 1984-07-03 Varian Associates, Inc. Sputter target for use in a sputter coating source
US4461688A (en) * 1980-06-23 1984-07-24 Vac-Tec Systems, Inc. Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method
US4401539A (en) * 1981-01-30 1983-08-30 Hitachi, Ltd. Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure
US4422896A (en) * 1982-01-26 1983-12-27 Materials Research Corporation Magnetically enhanced plasma process and apparatus
US4414086A (en) * 1982-11-05 1983-11-08 Varian Associates, Inc. Magnetic targets for use in sputter coating apparatus
US4428816A (en) * 1983-05-25 1984-01-31 Materials Research Corporation Focusing magnetron sputtering apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416385A (en) * 1977-06-10 1979-02-06 Varian Associates Target profile for sputtering apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318070A (ja) * 1986-04-04 1988-01-25 マテリアルズ　リサ−チ　コ−ポレイシヨン スパッタ陰極一標的アセンブリ
JPH0246854U (OSRAM) * 1988-09-19 1990-03-30
JPH03138361A (ja) * 1989-10-20 1991-06-12 Tokyo Electron Ltd スパッタ用ターゲット及びスパッタ方法
JPH03191058A (ja) * 1989-12-19 1991-08-21 Toshiba Corp スパッタリング装置
KR19990023327A (ko) * 1997-08-05 1999-03-25 토마스 엠. 알바레즈 제 1 및 제 2 재료를 기판상에 증착하는 장치 및 방법
JP2012525503A (ja) * 2009-04-28 2012-10-22 フェローテック（ユーエスエー）コーポレイション 円錐型蒸着チャンバにおける密度最適化のためのｈｕｌａ基板ホルダを特徴とする、リフトオフ蒸着システム

Also Published As

Publication number Publication date
MY8700801A (en) 1987-12-31
GB8328208D0 (en) 1983-11-23
SG87987G (en) 1988-06-03
IT8323382A0 (it) 1983-10-20
HK488A (en) 1988-01-15
FR2535109A1 (fr) 1984-04-27
DE3338377A1 (de) 1984-04-26
KR840006557A (ko) 1984-11-30
GB2129021A (en) 1984-05-10
US4547279A (en) 1985-10-15
IT1169862B (it) 1987-06-03
GB2129021B (en) 1986-09-10
JPH021909B2 (OSRAM) 1990-01-16

Similar Documents

Publication Publication Date Title
JPS5976875A (ja) マグネトロン型スパッタ装置とそれに用いるターゲット
EP1184483B1 (en) Thin-film formation system and thin-film formation process
US5824197A (en) Shield for a physical vapor deposition chamber
KR100212087B1 (ko) 스퍼터링 장치
US6613199B1 (en) Apparatus and method for physical vapor deposition using an open top hollow cathode magnetron
TW450999B (en) Target for a physical vapor deposition system and sputter chamber utilizing the same
JP5921048B2 (ja) スパッタリング方法
JPH1129865A (ja) スパッタリングチャンバのマグネット
JPH07150344A (ja) 自浄式コリメータ
CN112004958B (zh) 溅射阴极、溅射阴极组件、以及溅射装置
JPWO2010134346A1 (ja) 成膜方法及び成膜装置
US6413392B1 (en) Sputtering device
CN102066604A (zh) 阴极单元及具有该阴极单元的溅射装置
CN201918355U (zh) 钛溅射环、应用该钛溅射环的溅射反应器
JPH06505051A (ja) マグネトロンスパッタコーテイング法と回転磁石陰極を備えた装置
JP2008214709A (ja) マグネトロンスパッタ装置
JPS63282263A (ja) マグネトロンスパッタリング装置
JPH0525625A (ja) マグネトロンスパツタカソード
JPH0578831A (ja) 薄膜形成方法およびその装置
JP2004285445A (ja) スパッタ方法及びスパッタ装置
JPH0342035Y2 (OSRAM)
JP3366391B2 (ja) スパッタ装置及びスパッタ成膜方法
JPS6361387B2 (OSRAM)
JPH024966A (ja) スパツタ装置
JPH06272037A (ja) 薄膜形成方法およびその装置