HK488A - Sputtering apparatus - Google Patents
Sputtering apparatusInfo
- Publication number
- HK488A HK488A HK4/88A HK488A HK488A HK 488 A HK488 A HK 488A HK 4/88 A HK4/88 A HK 4/88A HK 488 A HK488 A HK 488A HK 488 A HK488 A HK 488A
- Authority
- HK
- Hong Kong
- Prior art keywords
- sputtering apparatus
- sputtering
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
- Helmets And Other Head Coverings (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57184577A JPS5976875A (en) | 1982-10-22 | 1982-10-22 | Magnetron type sputtering device |
Publications (1)
Publication Number | Publication Date |
---|---|
HK488A true HK488A (en) | 1988-01-15 |
Family
ID=16155636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK4/88A HK488A (en) | 1982-10-22 | 1988-01-07 | Sputtering apparatus |
Country Status (10)
Country | Link |
---|---|
US (1) | US4547279A (en) |
JP (1) | JPS5976875A (en) |
KR (1) | KR840006557A (en) |
DE (1) | DE3338377A1 (en) |
FR (1) | FR2535109A1 (en) |
GB (1) | GB2129021B (en) |
HK (1) | HK488A (en) |
IT (1) | IT1169862B (en) |
MY (1) | MY8700801A (en) |
SG (1) | SG87987G (en) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL185372C (en) * | 1980-02-18 | 1990-03-16 | Teco Societe Anonyme | MULTI-POLE ELECTRICAL SAFETY SWITCH. |
FR2476384B1 (en) * | 1980-02-18 | 1985-11-29 | Teco Sa | IMPROVEMENTS ON A MANUALLY CLOSED SAFETY CIRCUIT BREAKER AND MAGNETIC AND THERMAL UNLOCKING UNITS |
US4515675A (en) * | 1983-07-06 | 1985-05-07 | Leybold-Heraeus Gmbh | Magnetron cathode for cathodic evaportion apparatus |
NL8402012A (en) * | 1983-07-19 | 1985-02-18 | Varian Associates | MICROWAVE SPETTER COATING APPLICATION SOURCE FOR BOTH MAGNETIC AND NON-MAGNETIC TARGET MATERIALS. |
DE3442206A1 (en) * | 1983-12-05 | 1985-07-11 | Leybold-Heraeus GmbH, 5000 Köln | Magnetron cathode for atomising ferromagnetic targets |
US4486287A (en) * | 1984-02-06 | 1984-12-04 | Fournier Paul R | Cross-field diode sputtering target assembly |
US4606806A (en) * | 1984-05-17 | 1986-08-19 | Varian Associates, Inc. | Magnetron sputter device having planar and curved targets |
US4627904A (en) * | 1984-05-17 | 1986-12-09 | Varian Associates, Inc. | Magnetron sputter device having separate confining magnetic fields to separate targets and magnetically enhanced R.F. bias |
US4569746A (en) * | 1984-05-17 | 1986-02-11 | Varian Associates, Inc. | Magnetron sputter device using the same pole piece for coupling separate confining magnetic fields to separate targets subject to separate discharges |
US4661228A (en) * | 1984-05-17 | 1987-04-28 | Varian Associates, Inc. | Apparatus and method for manufacturing planarized aluminum films |
DE3581558D1 (en) * | 1984-05-17 | 1991-03-07 | Varian Associates | MAGNETRONIC SPRAYING DEVICE WITH PLANES AND CONCAVE ROLLING PLATES. |
US4610774A (en) * | 1984-11-14 | 1986-09-09 | Hitachi, Ltd. | Target for sputtering |
JPS61183467A (en) * | 1985-02-08 | 1986-08-16 | Hitachi Ltd | Sputtering electrode |
US4855033A (en) * | 1986-04-04 | 1989-08-08 | Materials Research Corporation | Cathode and target design for a sputter coating apparatus |
DE3787390T2 (en) * | 1986-04-04 | 1994-06-16 | Materials Research Corp | Cathode and target arrangement for a coating device for atomization. |
US4834860A (en) * | 1987-07-01 | 1989-05-30 | The Boc Group, Inc. | Magnetron sputtering targets |
GB2209769A (en) * | 1987-09-16 | 1989-05-24 | Ion Tech Ltd | Sputter coating |
JPH0246854U (en) * | 1988-09-19 | 1990-03-30 | ||
US5403663A (en) * | 1989-06-12 | 1995-04-04 | Leybold Aktiengesellschaft | Process for coating a polycarbonate substrate with an aluminum-silicon alloy |
DE3919147C2 (en) * | 1989-06-12 | 1998-01-15 | Leybold Ag | Process for coating a plastic substrate with aluminum |
JP3047917B2 (en) * | 1989-10-20 | 2000-06-05 | 東京エレクトロン株式会社 | Sputtering target and sputtering method |
JPH0733576B2 (en) * | 1989-11-29 | 1995-04-12 | 株式会社日立製作所 | Sputter device, target exchanging device, and exchanging method thereof |
JPH03191058A (en) * | 1989-12-19 | 1991-08-21 | Toshiba Corp | Sputtering device |
US5080772A (en) * | 1990-08-24 | 1992-01-14 | Materials Research Corporation | Method of improving ion flux distribution uniformity on a substrate |
JPH04114210U (en) * | 1991-03-26 | 1992-10-07 | 日立化成工業株式会社 | Planar antenna housing structure |
US5334302A (en) * | 1991-11-15 | 1994-08-02 | Tokyo Electron Limited | Magnetron sputtering apparatus and sputtering gun for use in the same |
DE9217937U1 (en) * | 1992-01-29 | 1993-04-01 | Leybold Ag, 6450 Hanau, De | |
US6605198B1 (en) * | 1993-07-22 | 2003-08-12 | Sputtered Films, Inc. | Apparatus for, and method of, depositing a film on a substrate |
EP0661728B1 (en) * | 1993-12-28 | 1997-06-11 | Shin-Etsu Chemical Co., Ltd. | Dipole ring magnet for use in magnetron sputtering or magnetron etching |
EP0704878A1 (en) * | 1994-09-27 | 1996-04-03 | Applied Materials, Inc. | Uniform film thickness deposition of sputtered materials |
US5697827A (en) * | 1996-01-11 | 1997-12-16 | Rabinowitz; Mario | Emissive flat panel display with improved regenerative cathode |
GB9606920D0 (en) * | 1996-04-02 | 1996-06-05 | Applied Vision Ltd | Magnet array for magnetrons |
DE19614595A1 (en) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Apparatus for cathode sputtering in substrate coating |
DE19614598A1 (en) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Cathode sputtering device |
US5863399A (en) * | 1996-04-13 | 1999-01-26 | Singulus Technologies Gmbh | Device for cathode sputtering |
US6042706A (en) * | 1997-01-14 | 2000-03-28 | Applied Materials, Inc. | Ionized PVD source to produce uniform low-particle deposition |
US5985115A (en) | 1997-04-11 | 1999-11-16 | Novellus Systems, Inc. | Internally cooled target assembly for magnetron sputtering |
KR19990023327A (en) * | 1997-08-05 | 1999-03-25 | 토마스 엠. 알바레즈 | Apparatus and method for depositing first and second materials onto a substrate |
TW460599B (en) * | 1998-01-14 | 2001-10-21 | Toshiba Corp | Method for forming fine wiring pattern |
US6217716B1 (en) | 1998-05-06 | 2001-04-17 | Novellus Systems, Inc. | Apparatus and method for improving target erosion in hollow cathode magnetron sputter source |
JP2000098582A (en) * | 1998-09-17 | 2000-04-07 | Ulvac Seimaku Kk | Phase shift photomask blank, phase shift photomask, their fabrication and equipment for fabrication of the same photomask blank |
US6783638B2 (en) | 2001-09-07 | 2004-08-31 | Sputtered Films, Inc. | Flat magnetron |
US6846396B2 (en) * | 2002-08-08 | 2005-01-25 | Applied Materials, Inc. | Active magnetic shielding |
US20080083611A1 (en) * | 2006-10-06 | 2008-04-10 | Tegal Corporation | High-adhesive backside metallization |
US8691057B2 (en) * | 2008-03-25 | 2014-04-08 | Oem Group | Stress adjustment in reactive sputtering |
US20090246385A1 (en) * | 2008-03-25 | 2009-10-01 | Tegal Corporation | Control of crystal orientation and stress in sputter deposited thin films |
CN102405302B (en) * | 2009-04-28 | 2016-09-14 | 磁性流体技术(美国)公司 | It is characterised by the stripping depositing system of the HULA substrate support of taper settling chamber Midst density optimization |
US8482375B2 (en) * | 2009-05-24 | 2013-07-09 | Oem Group, Inc. | Sputter deposition of cermet resistor films with low temperature coefficient of resistance |
JP6244103B2 (en) | 2012-05-04 | 2017-12-06 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | Method and reactive sputter deposition system for reactive sputter deposition |
JP5343162B1 (en) * | 2012-10-26 | 2013-11-13 | エピクルー株式会社 | Epitaxial growth equipment |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4046659A (en) * | 1974-05-10 | 1977-09-06 | Airco, Inc. | Method for coating a substrate |
US4060470A (en) * | 1974-12-06 | 1977-11-29 | Clarke Peter J | Sputtering apparatus and method |
US4100055A (en) * | 1977-06-10 | 1978-07-11 | Varian Associates, Inc. | Target profile for sputtering apparatus |
US4169031A (en) * | 1978-01-13 | 1979-09-25 | Polyohm, Inc. | Magnetron sputter cathode assembly |
US4219397A (en) * | 1978-11-24 | 1980-08-26 | Clarke Peter J | Magnetron sputter apparatus |
HU179482B (en) * | 1979-02-19 | 1982-10-28 | Mikroelektronikai Valalat | Penning pulverizel source |
GB2058143B (en) * | 1979-07-31 | 1983-11-02 | Nordiko Ltd | Sputtering electrodes |
US4457825A (en) * | 1980-05-16 | 1984-07-03 | Varian Associates, Inc. | Sputter target for use in a sputter coating source |
US4461688A (en) * | 1980-06-23 | 1984-07-24 | Vac-Tec Systems, Inc. | Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method |
US4401539A (en) * | 1981-01-30 | 1983-08-30 | Hitachi, Ltd. | Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure |
US4422896A (en) * | 1982-01-26 | 1983-12-27 | Materials Research Corporation | Magnetically enhanced plasma process and apparatus |
US4414086A (en) * | 1982-11-05 | 1983-11-08 | Varian Associates, Inc. | Magnetic targets for use in sputter coating apparatus |
US4428816A (en) * | 1983-05-25 | 1984-01-31 | Materials Research Corporation | Focusing magnetron sputtering apparatus |
-
1982
- 1982-10-22 JP JP57184577A patent/JPS5976875A/en active Granted
-
1983
- 1983-08-04 FR FR8312887A patent/FR2535109A1/en not_active Withdrawn
- 1983-09-06 KR KR1019830004180A patent/KR840006557A/en not_active Application Discontinuation
- 1983-10-20 IT IT8323382A patent/IT1169862B/en active
- 1983-10-21 DE DE19833338377 patent/DE3338377A1/en not_active Withdrawn
- 1983-10-21 GB GB08328208A patent/GB2129021B/en not_active Expired
-
1984
- 1984-11-21 US US06/673,928 patent/US4547279A/en not_active Expired - Lifetime
-
1987
- 1987-10-12 SG SG879/87A patent/SG87987G/en unknown
- 1987-12-30 MY MY801/87A patent/MY8700801A/en unknown
-
1988
- 1988-01-07 HK HK4/88A patent/HK488A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
IT8323382A0 (en) | 1983-10-20 |
JPH021909B2 (en) | 1990-01-16 |
GB2129021A (en) | 1984-05-10 |
GB2129021B (en) | 1986-09-10 |
SG87987G (en) | 1988-06-03 |
JPS5976875A (en) | 1984-05-02 |
MY8700801A (en) | 1987-12-31 |
FR2535109A1 (en) | 1984-04-27 |
DE3338377A1 (en) | 1984-04-26 |
KR840006557A (en) | 1984-11-30 |
US4547279A (en) | 1985-10-15 |
GB8328208D0 (en) | 1983-11-23 |
IT1169862B (en) | 1987-06-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |