KR19990023327A - Apparatus and method for depositing first and second materials onto a substrate - Google Patents

Abstract

Molecules of inert gas (eg argon) flow through the cavity formed by the anode and the first and second targets. The voltage is applied to the target and anode provided for the hollow axis and the inner surface of the hollow. The second target is farther from the anode than the first target and is larger than the first target in a direction substantially perpendicular to the coaxial axis. Each target is positioned relative to the other to deposit atoms from the target on the substrate without interference from the other target. Each target inner surface is preferably Furusto-conical with a diameter gradually increasing at a gradual distance from the anode. The diameter of the first target inner surface at the farthest end from the anode is preferably not as large as the diameter of the second target inner surface at the most nearest to the anode. One target may be formed of a first material (eg copper) and the other may be formed of a second material (eg chromium or titanium). The voltage on each target is varied with respect to the voltage on the anode in continuous time to control the amount of comparison of atoms deposited from the target on the substrate in continuous time. For example, such a voltage change can be initially provided for (1) deposition of a first target atom on a substrate, and (2) a gradual decrease of the first target atom and a gradual increase of the second target atom together. (3) After that, a second target atom can be provided.

Description

Apparatus and method for depositing first and second materials onto a substrate

The present invention is directed to an apparatus and method for providing controlled deposition on a substrate. In particular, the present invention relates to apparatus and methods for controlled deposition of two different materials on a substrate.

The substrate or wafer is fabricated from a number of dies (sometimes hundreds of dies) on each substrate or wafer. Each die formed successively on the substrate may form an integrated circuit chip. The dies are inspected on the substrate to determine if they are produced properly. Bad dies are marked on the substrate to distinguish them from good dies. The die is then cut from the substrate and leaves a good die for use as an integrated circuit chip.

The substrate is produced from a plurality of continuous layers, certain electrically conductive materials, and other electrically insulating materials. When a layer of electrically conductive material is formed, it is etched and removed to represent an electrical circuit element. In order to create such an electrical circuit element, a layer of electrically conductive material must be initially deposited on the substrate, preferably of substantially uniform thickness. Light receiving masquel materials do not damage etching materials such as acidic or chemical plasmas.

The remaining part of the layer is then etched by acidity. The masking material that receives the light is then removed from the remaining electrically conductive material in the layer. The remaining electrically conductive material in a number of different layers produced in the same manner as the remaining electrically conductive material in such a layer forms an electrical circuit element for each die on the wafer.

Devices are often used to deposit sputtered atoms onto a substrate to create a layer of material formed by sputtered atoms. The apparatus can create such a deposition by generating a glow discharge between the target and the anode in the cavity to release the sputtered atoms from the target. The magnetic field cooperates with the electric field to create a force in the electron such that the length of the path of motion of the electron in the cavity between the target and the anode is increased to promote the ionization of the neutral gas.

For example, when an aluminum layer is deposited on a wafer, the target is made from aluminum. When the target is bombarded with ions of an inert gas such as argon, the target releases sputtered atoms of aluminum. These atoms migrate to the substrate and are deposited on the substrate to produce a uniform layer of electrically conductive material on the wafer as described above.

Techniques similar to those described above have been used to deposit aluminum oxide on magnetic transducer heads. For example, sputtered atoms released from a target are chemically bound to oxygen flowing through the cavity at a controlled rate. Chemical bonding allows aluminum oxide to be produced. Aluminum oxide is deposited on the magnetic transducer head. Aluminum oxide is preferred because it is an electrical insulator and is hard. In this way, even if the head improperly contacts an information medium such as a storage disk, the head is not mechanically damaged and no electrical short occurs in the medium.

It is sometimes necessary to provide deposition on a substrate of a layer in which the composition gradually changes throughout the layer. For example, layers may be deposited on a substrate where the first layer is initially composed of only the first material, the composition of the second layer gradually changes from the first material to the second material, and the third The layer consists only of a second material. In other embodiments, multiple layers are formed at progressive time zones to provide different combinations of materials at progressive time zones on the substrate.

Materials such as chromium or titanium are initially applied as a first layer to substrates composed of silicon dioxide because they have a good affinity for silicon dioxide. Since the composition of the second layer is then gradually changed, the amount of chromium or titanium in the continuous thickness in the layer is gradually reduced, and the amount of copper in the continuous thickness is gradually increased. The third layer is then composed only of copper. Although copper does not have good affinity for the substrate when applied directly to the substrate, in this way it has good affinity for the silicon dioxide covering the substrate when applied to the substrate.

Using a prior art apparatus for initially depositing a first material on a substrate, deposition on the substrate gradually reduces the amount of the first material, progressively increases the amount of the second material and only on the substrate. Only the second material will be deposited. The apparatus generally includes two sources having a side by side relationship with one another for the first material and for the second material. The device has certain significant faults. One major drawback is that the side-by-side relationship interferes with the continuous layer at the beginning of the first material, and then with the continuous layer of the first and second materials, and then prevents the second material from being deposited uniformly on the substrate. Is that.

The present invention initially overcomes the drawbacks of depositing a second material after depositing a first material onto a substrate and then depositing a mixture of the first material and the second material according to a conventional method. An apparatus and a method thereof are provided. The apparatus and method of the present invention provide a deposition that is provided uniformly on a substrate.

In a first embodiment according to the invention, molecules of an inert gas (eg argon) flow through the cavity formed by the anode and the first and second targets. The voltage applied to the anode and the target causes electrons to flow from the target to the anode. Each target has a hollow surface and a coaxial axis. The second target is larger than the first target in a direction away from the anode and perpendicular to the cavity axis than the first target.

Each target is positioned relative to the other to provide deposition of atoms from the target on the substrate without interference from other targets. Each target inner surface is preferably frusto-conical, gradually increasing in diameter at progressive distances from the anode. The diameter of the first target inner surface furthest from the anode is preferably not as large as the diameter of the second target inner surface at the farst end to the anode. One target may be formed of a first material (eg copper) and the other may be formed of a second material (eg chromium or titanium).

The voltage on each target is changed in comparison to the voltage on the anode at successive times to control the comparative amount of atoms deposited from the target on the substrate at successive times. For example, such a change in voltage is provided for (1) to be initially deposited on a substrate of atoms from a first target, and (2) then a gradual decrease in first target atoms and a gradual increase in second target atoms. Is mixed, and (3) thereafter, the second target atoms are mixed.

1 is a partial cross-sectional view of an apparatus according to the prior art for depositing sputtered atoms of material from a target on a substrate such as a wafer.

2 is constructed in accordance with one embodiment of the present invention, to initially deposit on a first material substrate, thereafter deposit a mixture of the first and second materials, and then deposit only the second material. Schematic drawing of the device used in the embodiment shown in FIG.

3 is a schematic front view showing the deposition produced on the substrate by the embodiment shown in FIG.

4 is a curve showing comparative amounts of first and second materials deposited on a substrate at progressive instantaneous times.

Explanation of symbols for the main parts of the drawings

32: anode 34: cavity

40: clamp 46: cooling member

52: passage 56: permanent magnet

100: first layer 102: second layer

104: third layer 128: coaxial

In one embodiment of the prior art, an apparatus provided for depositing sputtered atoms from target 12 on the surface of substrate 14 is labeled 10 in FIG. 1. The device is configured as shown and is co-inventor Peter S. in the name of an apparatus and method for depositing a film on a substrate. Clark and Andrew P. Filed November 29, 1995 in the name of Clark and disclosed in Application No. 08 / 564,659, assigned to the assignee of the present application.

As another alternative, the substrate may constitute the wafer 14 required for the semiconductor industry. Wafer 14 may be placed at ground potential. Wafer 14 may be in the form of a thin disk of a suitable material, such as silicon dioxide, and may be a suitable diameter of approximately 3 inches to 8 inches. The wafer can hold a number of dies, each of which is generally of the same structure and, when completed, forms an integrated circuit chip that forms a complex electrical circuit element. Since each die is very small, for example 1/4 inch, many dies can be formed on a single wafer. Each die may be provided with a surface to accommodate uniform deposition of sputtered atoms.

The target 12 may be a single member, and preferably has an annular structure, as shown in FIGS. 1 and 2. The target 12 may be formed by an annular outer circumference 16 and may be provided with a centrally arranged opening forming a furusto-conical inner circumference 18. Target 12 may be formed from a suitable material, such as aluminum or titanium.

The anode 32 is disposed inward relative to the target 12 and may be supported in a suitable manner in known art. Chamber or cavity 34 is formed in part by target 12 and anode 32. Cavity 34 traps an inert gas atom such as argon. Inert gas atoms, such as argon, are introduced into the cavity 34 through the inlet 35. An electric field is provided between the anode 32 and the target 12 by connecting the anode and the target to the positive and negative terminals of the power supply, respectively. The anode 32 may be at ground potential or at a suitable voltage on the ground.

The clamp 40 is disposed in the central opening of the target 12 in a relationship proximate to the inner circumference 18 of the target. The clamp 40 has a shoulder that overlaps the inner circumference 18 of the target 12. Clamp 40 may be formed of a suitable material, such as copper. The clamp 40 is disposed relative to the support 44 of the cooling member 46 and is attached to the support of the cooling member by screws. The structure of the clamp and associated members, such as cooling member 46, have been assigned to the Applicant's assignee and filed with a US patent application filed on November 27, 1989 with the name of an apparatus for depositing a thin film containing gas on the member. No. 441, 642.

The cooling member 46 has a portion 50 proximate to the outer circumference 16 of the target 12. The passages 52 are respectively disposed in the cooling member 46 and are disposed outside of the cooling member so that a fluid such as water can flow to cool the clamp 40 and the target 12. A pair of magnetizable members 54, 55 surrounding the permanent magnet 56 are disposed on opposite sides of the target 12 to create a magnetic field in the cavity 34.

The voltage difference between the anode 32 and the target 12 causes the discharged electrons to move towards the anode. The magnetic field is generated in the cavity or chamber by the permanent magnet and the electrons move the anode 32 from the target 12 because the magnetizable members 54, 55 have components in a direction perpendicular to the electric field between the anode and the target. Toward a path other than a straight path (e.g., a spiral or a circular path). Due to the helical path, the electrons have ample opportunity to strike and ionize argon atoms in the cavity or chamber 34.

Argon ions migrate to the furusto-conical inner circumference 18 of the target 12 and, when they invade the surface, cause sputtered atoms to separate from these surfaces. Sputtered atoms migrate to the wafer or substrate 12 and are deposited on the wafer. When the gaseous material is depleted from the furusto-conical surface 20 of the target 12, the target gradually wears out. When the target 12 is sufficiently worn out, the target 12 is removed from the device and replaced by a new target.

When the sputtered atoms are separated from the furusto-conical surface of the target 12, the target is heated. This is caused to expand on the outer periphery 16 of the target shown in FIG. 1 due to thermal expansion of the metal. However, the outer circumference 16 of the target 12 is held in a fixed position due to mechanical proximity to the portion 50 of the cooling member 46 and by the cooling action of the cooling member. This cooling action is obtained with the flow of cooling fluid, such as water, through the passage 52.

A shield 70 formed of a suitable material such as aluminum is disposed between the target 12 and the wafer 14. The shield 70 is provided with a hollow interior 72 having a suitable structure, such as a Furusto-conical structure that forms a funnel with a gradual portion towards the wafer 14. The shield 70 is provided with a suitable potential, such as earth potential.

Due to its ground potential, the shield 70 attracts electrons and negative ions in the space between the target 12 and the wafer 14. Since the charged particles generate heat as they enter the wafer or substrate 14, the shield 70 prevents the movement of the charged particles to the wafer 14 so that the wafer can maintain a relatively cold temperature. do. This helps to position the wafer 14 close to the target 12.

A first layer 100 formed of a first material such as chromium or titanium, a second layer 102 formed of a mixture of a second material and a first material such as copper, and a third layer 104 formed only of a second material It is sometimes required to provide deposition on a substrate 12 in a continuous layer with). The layers 100, 102, 104 have thicknesses of approximately 1000 ms, approximately 2000 ms and approximately 1000 ms, respectively.

Layers 100, 102, 104 are continuously deposited on substrate 12 if the material of layer 104 (eg, copper) is deposited directly on the substrate and does not have affinity for the substrate 12 material. . However, the material of layer 100 (eg titanium or chromium) has affinity for the material of layer 104 (eg copper) and the substrate 12 material (eg silicon dioxide). .

The affinity between the substrate 12 and copper, chromium or titanium is gradually changed when the composition of the layer 102 changes from pure chromium or titanium at the boundary of the layer 102 to clean the copper at the boundary of the layer 104. Is improved. This is achieved by gradually decreasing the percentage of chromium or titanium, gradually increasing the percentage of copper, and gradually changing the position along layer 102 from the boundary of layer 100 to the boundary of layer 104. do.

4 shows a comparative percentage of copper as one material, and at different thicknesses or gradual depth of material from the boundary between the substrate 12 at the last position as well as the initial position to the outer boundary of the layer 104, and another material. As a curve, a curve representing a comparative percentage of chromium or titanium is shown. In FIG. 4, such depth or thickness is shown in the vertical axis, and the material percentage is shown along the vertical axis. Curve 106 represents the comparative amount of chromium or titanium at successive depths or thicknesses. Curve 106 represents the comparative amount of copper at continuous depth or thickness.

FIG. 2 shows one embodiment of providing the deposition apparatus shown in FIGS. 3 and 4 and detailed above. The embodiment shown in FIG. 2 is similar to the prior art embodiment shown in FIG. 1, except that it includes two targets 120 and 122 instead of one target 12 shown in FIG. All are the same.

Targets 120 and 122 have hollow inner surfaces 124 and 126, respectively, and preferably have a cavity axis 128 (shown in dashed lines) substantially perpendicular to the anode 32. The target 120 has a wider space from the anode 32 than the target 122 and is larger than the target 122 in a direction substantially perpendicular to the common axis. Targets 120 and 122 are placed in comparison to each other to deposit atoms from each target on substrate 12 without any interference from other targets.

Each of the inner surfaces 124, 126 of the targets 120, 122 is preferably Furusto-conical, whose diameter gradually increases at progressive distances from the anode 32. The diameter of the inner surface 126 of the target 122 farthest from the anode 32 is preferably as large as the diameter of the inner surface 124 of the target 120 at the farthest distance from the anode 32. Another example of material may be titanium for one of the targets, tungsten for the other target or titanium-tungsten for one of the targets and copper for the other target. These examples are merely examples, and other embodiments are possible in accordance with the scope of the present invention.

Separate magnetization for each of targets 120 and 122 provided for target 12 of FIG. 1 and corresponding to magnetizable paths including magnetizable paths 54 and 55 and permanent magnets 56. The path to be provided is provided. Such a magnetizable path is schematically indicated at 132 for the target 122 and 130 for the target 120 in FIG. 2.

The anode 134 is disposed in the hollow interior of the target 122 proximate to the target floor. The anode 134 is identical to the anode 32 in the prior art embodiment shown in FIG. The second anode 136 may be provided between the targets 120 and 122. The third anode 138 may be disposed above the target 120. The anodes 134, 136, 138 may be provided with a specific potential, such as the potential of the site or of the site. The anode 136 tends to electrically isolate the targets 120 and 122 from each other. The anode 138 tends to isolate the target 120 from other components in a system such as the substrate 14.

CPU (central processing unit) 140 is coupled to targets 120 and 122 to introduce a controlled voltage to the target at progressive time instants. The CPU 140 compares each of the targets 120, 122 with the voltage on the anode 134 at successive instants to control the amount of deposition atoms from each of the targets on the substrate 14 at successive instants. To change the voltage of the phase.

For example, varying the voltage applied by the CPU 140 to the targets 120, 122 may cause the targets on the substrate without simultaneously depositing atoms from the target 122 on the substrate to form the layer 100. 120 may initially provide for the deposition of atoms. The change in voltage applied to the targets 120, 122 by the CPU 140 may provide deposition on the layer 100 of the mixture of atoms from the targets 120, 122 to form the layer 102. Since this mixture can be changed gradually, it can reduce the atomic weight from the target 120 and increase the atomic weight from the target 122 provided at a gradual position along the thickness of the layer 122. Thereafter, the change in the voltage applied to the targets 120 and 122 by the CPU will provide deposition on the substrate 14 of the atom from the target 122 without being deposited on the substrate of the atom from the target 120. Can be.

Although the present invention has been described with reference to the above-described embodiments, it is possible for those skilled in the art to apply other embodiments within the spirit and scope of the present invention. Accordingly, the invention is limited only by the scope of the following claims.

Claims (40)

An anode disposed spaced apart from the substrate; A first target disposed spaced apart from the substrate and the anode and symmetrically disposed about a specific axis and formed of a first material; A second target disposed further apart from the anode and the substrate than the first target formed of a second material different from the first material and symmetrically disposed about a specific axis; First means for applying a voltage on the anode; Inert gas ions in the cavity flow to the target to sputter atoms from the target on the substrate, and with respect to the voltage on the anode to generate electrons in the cavity to ionize the inert gas molecules in the cavity to flow the electrons to the anode. Second means for applying a negative voltage on the target; Third means disposed relative to the anode and the target to provide motion of the electron between the anode and the target via a path other than a straight path to improve sputtering of the atom from the target to the substrate and ionization of the inert gas atom; Progressive instantaneous time to provide sputtering of atoms from each of the first and second targets on the substrate at progressive instantaneous time as a ratio for each of the targets as a ratio relative to the ratio from the other target depending on the relative negative voltage on the target at the progressive time instant Fourth means for applying a relative negative voltage on the first and second targets at; And the anode and target form a cavity for receiving atoms of an inert gas flowing through the cavity. 2. The apparatus of claim 1, wherein the first target material is selected from the group consisting of chromium or titanium, and the second target material is copper. 2. The apparatus of claim 1, wherein the first and second targets are provided in a hollow annular structure formed by an inner circumferential surface. 2. The substrate of claim 1, wherein the first and second targets are provided in a furusto-conical structure, each having a radius that increases at a gradual distance from the anode towards the substrate. Device to deposit. 2. The apparatus of claim 1, wherein the first and second targets have hollow annular internal structures and are separated from each other in the axial direction. The method of claim 1, wherein the fourth means is adapted to initially sputter atoms from the first target, subsequently to sputter atoms simultaneously from the first and second targets, and thereafter to sputter atoms from the second target. Apparatus for depositing a first and a second material on a substrate, characterized in that provided. Anode; A first hollow target spaced from the anode to act as a first cathode, disposed on a particular axis substantially perpendicular to the anode, and formed of a first material; A second hollow target spaced from the first hollow target and the anode, disposed on a particular axis, and formed of a second material different from the first material to act as a second cathode; First means for passing inert gas molecules through the cavity; Second means for applying a voltage to the anode and applying a negative voltage to the target relative to the voltage on the anode to create a flow of electrons from the target toward the anode; Third means for creating a magnetic field between the anode and the target for sputtering atoms from the target for deposition on a substrate and for providing motion of electrons between the anode and the target in a path for ionizing inert gas molecules in the cavity And; To sputter atoms from the first target on the substrate in a first time period, to sputter atoms from the first and second targets simultaneously on the substrate in a second specific time period after the first time period and to first and second times Fourth means for applying a comparative negative voltage on the first and second targets at progressive time instants to sputter atoms from the second target on the substrate in a third time period after the cycle; And the first and second hollow targets form a cavity equipped with an anode. 8. The method of claim 7, wherein the fourth means applies a negative voltage to the first target in the first time period to deposit only material from the first target on the substrate in the first time period and the first on the substrate in the second time period. And applying a negative voltage to the first and second targets in a second time period to simultaneously deposit material from the second target and in a third time period to deposit only material from the second target on the substrate in a third time period. Apparatus for depositing a first and a second material on a substrate, characterized by applying a negative voltage to the second target. 8. The method of claim 7, wherein the fourth means is for progressively reducing the amount of deposition of material from the first target on the substrate in the second time period and simultaneously reducing the amount of deposition of material from the second target on the substrate in the second time period. And varying the comparative negative voltage on the first and second targets in a second time period to augment it. 8. The method of claim 7, wherein the first hollow target has an inner wall, and the distance between opposite ends of the first hollow target inner wall is increased at an axially gradual position of the first hollow target in a direction away from the anode and the substrate, and the second The hollow target has an inner wall, and the distance between opposite ends of the inner wall of the second hollow target is increased at an axially gradual position of the second hollow target in a direction away from the anode and the substrate. Device for depositing on a substrate. 9. The method of claim 8, wherein the fourth means is configured to gradually reduce the amount of deposition of material from the first target on the substrate in a second time period and simultaneously reduce the amount of deposition of material from the second target on the substrate in a second time period. Change the comparative negative voltage on the first and second targets in a second time period to increase by; The first hollow target has an inner wall, and the distance between opposite ends of the first hollow target inner wall is increased at an axially gradual position of the first hollow target in a direction away from the anode and the substrate; The second hollow target has an inner wall, and the distance between opposite ends of the second hollow target inner wall is increased at an axially gradual position of the second hollow target in a direction away from the anode and the substrate. A device for depositing material on a substrate. 12. The apparatus of claim 11, wherein one of the targets is formed of copper and the other target is formed of a material selected from the group consisting of chromium and titanium. Anode; A first hollow target spaced from the anode to act as a first cathode, having a hollow interior that is a Furusto-conical structure, disposed on a particular axis substantially perpendicular to the anode, and formed of a first material; A second, spaced from the anode to act as a second cathode, having a hollow interior that is a Furusto-conical structure, disposed on a particular axis at a location farther from the anode that is the first target, and different from the first material A second hollow target formed of a material; First means for passing neutral gas molecules through the cavity; Second means for applying a voltage to the anode and applying a negative voltage to the target in comparison to the voltage on the anode to create an electric field in the cavity in the direction of electron flow from the target to the anode; To sputter atoms from the target on the substrate by bombardment of ions on the hollow interior of the target, and to provide electron motion between the anode and the target in a linear path for ionization by electrons of neutral gas molecules in the cavity. Third means for creating a magnetic field in the cavity in a substantially vertical direction; A second time after the first time of the progressively decreasing amount of atoms from the first target and the progressively increasing amount of atoms from the second target to provide deposition on the substrate of atoms from the first target only at the first time To provide deposition on the substrate at a third time after the second time, and to provide deposition on the substrate of atoms only from the second target at a third time after the second time, the first and the other being negative for the voltage on the anode. Fourth means for generating a comparison voltage on the second target; And the anode and the first and second targets are disposed relative to each other to form a cavity. 14. The apparatus of claim 13, wherein one of the targets is formed of copper and the other target is formed of a material selected from a group consisting of chromium and titanium. 14. The hollow interior of the first target of claim 13, wherein the hollow interior of the first target is furusto-conical, the diameter of the hollow interior of the first target gradually increases at a gradual distance from the anode to the hollow interior of the first target, The hollow interior is purusto-conical and the diameter of the hollow interior of the second target is gradually increased at a gradual distance from the anode to the hollow interior of the second target. Device. The diameter of the hollow interior of the first target at the position furthest from the first target from the anode is at least as much as the diameter of the hollow interior of the second target at the position closest to the second target up to the anode. An apparatus for depositing a first and a second material on a substrate, characterized in that large. An anode disposed in a spaced relationship with the substrate; A first target disposed in a spaced relationship with the anode, disposed on a particular axis, and formed of a first material; A second target disposed in a more spaced relationship from the anode than the first target, disposed on a particular axis, and formed of a second material different from the first material; First means for applying a voltage on the anode; A second means for applying a negative voltage on the target as compared to the voltage on the anode to generate electrons in the cavity to ionize the inert gas molecules in the cavity to flow electrons to the anode and flow inert gas ions in the cavity to the target ; A third disposed relative to the anode and target to provide motion of the electron between the anode and the target via a path different from the straight path to enhance ionization of the inert gas atoms and to improve the sputtering of the atoms from the target to the substrate Means; Fourth means for changing the comparative negative voltage on the target at different times to control the amount of comparison of material deposition from the first and second targets on the substrate at different times according to the comparative negative voltage value; And between the anode and the target a cavity for receiving inert gas atoms flowing through the cavity. 18. The apparatus of claim 17, wherein each of the targets is disposed relative to the substrate and a different target to sputter atoms on the substrate without interference from the other target. 18. The apparatus of claim 17, wherein one of the targets is formed of copper and the other target is formed of a material selected from the group consisting of titanium and chromium. 18. The method of claim 17, wherein the fourth means provides for a gradual change over time in the material deposited on the substrate from the substantially pure deposition of the first material to the substantially pure deposition of the second material. An apparatus for depositing a first and a second material on a substrate. 21. The method of claim 20, wherein the second target is disposed relative to the first target and the substrate to sputter atoms on the substrate without interference from the first target, one of the targets formed of copper, and the other target being titanium and chromium And first and second materials deposited on a substrate, the material being selected from the group consisting of: a. Disposing a pair of target and anode forming a cavity; Flowing inert gas molecules through the cavity; Providing a voltage on the anode and the target to generate an electric field for the movement of electrons from the target to the anode and for ionization of inert gas molecules during the movement of the electrons; Changing the voltage of each of the targets relative to the voltage on the anode at successive time instants to control the amount of deposition of atoms from the target on the substrate at successive time instants; The target has an interior surface formed into a hollow interior for sputtering atoms from the target to impinge inert gas ions on the target and to deposit sputtered atoms on a substrate; And the target is disposed in an overlapping relationship with one of the targets axially disposed from another target. 23. The method of claim 22, wherein the electric field is generated in a particular direction, and the force increases in the ionization rate of the inert gas molecules in the cavity, and the cavity in a direction transverse to the electric field direction to make the electron motion path between the anode and the target longer. A method of depositing a first and a second material on a substrate, wherein the first and second materials are provided on an inner electron. The method of claim 22, wherein the voltage over the respective targets is to initially deposit atoms from the first target on the substrate and to deposit a mixture of atoms from the first and second targets on the substrate, and A method of depositing first and second materials on a substrate, characterized by a change in voltage over the anode at progressive time instants to deposit atoms from the second target on the substrate. 25. The method of claim 24, wherein the voltage over each target is on the anode at a gradual time instant to provide a gradual change in the mixture of target atoms on the substrate from deposition of only the first target atom to deposition of only the second substrate atom. A method of depositing a first and a second material on a substrate, characterized in that it changes with respect to voltage. 27. The method of claim 25, wherein the electric field is generated in a particular direction, the force crossing the electric field direction to make the path of motion of electrons between the anode and the target longer, and to improve the ionization rate of the inert gas molecules in the cavity. A first material and a second material on the substrate, wherein the first and second materials are provided on the electrons in the cavity. Placing an anode with the first and second targets forming a cavity; Providing a voltage on the anode and the target to create an electric field in the cavity; Providing a flow of inert gas molecules in the cavity; To provide a flow of electrons in a linear path from the target to the anode, to provide inert gas molecular ionization in the cavity by the electrons, and to provide sputtering of atoms from the inner surface of the target by the ions. Providing a magnetic field in the cavity in a substantially vertical direction; Changing the voltage on the target relative to the voltage on the anode to control deposition of atoms from each of the targets or simultaneously from both targets in response to a voltage change; Each of the targets is hollow, has an inner surface, is on a coaxial axis, the second target is spaced further from the anode than the first target, and is larger than the first target in a direction substantially perpendicular to the cavity axis; Wherein each of the targets is disposed relative to another target to deposit atoms from the target on the substrate without any interference from the other targets. 28. The substrate of claim 27, wherein the inner surface of each of the targets is annular and the diameter of the inner surface of each of the targets gradually increases at a gradual distance from the anode along the target. How to deposit on. 28. The method of claim 27, wherein the inner surface of each of the targets is a furusto-conical and the diameter of the furusto-conical surface at the first target end furthest away from the anode is at least the second target closest to the anode. The diameter of the furusto-conical surface of each of the targets at the end closest to the anode as large as the diameter of the furusto-conical surface at the end is the furusto-conical shape of the target at the farthest end from the anode. A method for depositing a first and a second material on a substrate, characterized in that it is smaller than the diameter of the surface. 28. The method of claim 27, wherein one of the targets is formed of copper and the other target is formed of a material selected from the group consisting of chromium and titanium. 29. The second target end of claim 28, wherein the inner surface of each of the targets is a furusto-conical and the diameter of the furusto-conical surface at the first target end furthest from the anode is at least closest to the anode. The diameter of the furusto-conical surface of each of the targets at the end closest to the anode is as large as the diameter of the furusto-conical surface at Less than diameter, one of the targets is formed of copper, and the other target is formed of a material selected from the group consisting of chromium and titanium. The method of claim 1, wherein the additional anode is disposed between the first and second targets, and includes means for applying a voltage to the additional anode to electrically insulate the first and second targets. And depositing a second material on the substrate. The substrate of claim 1, wherein the additional anode comprises a means disposed between the first target and the substrate, the means for applying a voltage to the additional anode to insulate the additional anode from the substrate. Device for depositing on. 2. The Furusto-conical structure according to claim 1, wherein the first and second targets are hollow annular internal structures, separated from each other in the axial direction, each of which gradually decreases in radius with a gradual distance from the anode and the substrate. A hollow annular internal structure is provided, wherein the first additional anode is disposed between the first and second targets, the second additional anode is disposed between the first target and the substrate, and electrically connects the first and second targets. Means for applying a voltage to the first additional anode to insulate, and means for applying a voltage to the second additional anode to insulate the second additional anode from the substrate. Device for depositing on. 8. The method of claim 7, wherein the additional anode is disposed between the first and second targets and comprises means for applying a voltage to the additional anode to electrically insulate the first and second targets. And depositing a second material on the substrate. 8. The substrate of claim 7, wherein the additional anode comprises a means disposed between the first target and the substrate, the means for applying a voltage to the additional anode to insulate the additional anode from the substrate. Device for depositing on. 12. The push-up of claim 11, wherein the first and second targets have hollow annular internal structures and are separated from each other in the axial direction, each having a radius that gradually increases at progressive distances from the anode and the substrate. A hollow annular internal structure of conical structure is provided, wherein the second additional anode is disposed between the first and second targets, the second additional anode is disposed between the first target and the substrate, and the first and second targets are Means for applying a voltage to the first additional anode to electrically insulate, and means for applying a voltage to the second additional anode to insulate the second additional anode from the substrate. Depositing a substrate on a substrate. 23. The method of claim 22, comprising disposing an additional anode between the first and second targets and applying a voltage to the additional anodes to electrically insulate the first and second targets. A method of depositing first and second materials on a substrate. 23. The first and second materials of claim 22 comprising disposing an additional anode between the first target and the substrate and applying a voltage to the additional anode to insulate the additional anode from the substrate. To deposit on a substrate. 27. The method of claim 26, further comprising: disposing a first additional anode between the first and second targets, applying a voltage to the first additional anode to electrically insulate the first and second targets, and Disposing a second additional anode between the target and the substrate, and applying a voltage to the second additional anode to insulate the second additional anode from the substrate. How to deposit on