EP0334564A2 - Penning type cathode for sputter coating - Google Patents
Penning type cathode for sputter coating Download PDFInfo
- Publication number
- EP0334564A2 EP0334564A2 EP89302687A EP89302687A EP0334564A2 EP 0334564 A2 EP0334564 A2 EP 0334564A2 EP 89302687 A EP89302687 A EP 89302687A EP 89302687 A EP89302687 A EP 89302687A EP 0334564 A2 EP0334564 A2 EP 0334564A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- targets
- target
- anode
- coating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
Definitions
- One proposed fabrication technique for coating rigid magnetic disk memories is to sputter a ferro-magnetic material from a target onto a substrate to a controlled thickness and uniformity.
- This sputter coating is accomplished in an evacuated chamber having a controlled concentration of ionizable gas. Electrons moving in a confined region due to a magnetic field in the chamber ionize the gas in regions above the target and an electric field accelerates the charged ions toward the target with sufficient momentum to cause target material to be ejected when the ions collide with the target.
- the coating apparatus includes a first consumable cathode target having a generally planar, circular emitting surface which is oriented generally parallel to a substrate coating plane. Radially outward from this first planar emitting surface or target is an annular anode which helps set up an electric field for attracting ionized gas atoms to the target. A second consumable target located radially outward from the center target has a sputter surface angled with respect to the coating plane.
- the combination of the two targets and the anode form a concave structure bounding the vicinity of gas ionization.
- Ionization is concentrated in regions defined by a magnet which sets up magnetic fields having lines of force which intersect the inner and outer targets. This magnetic field orientation causes ionizing electrons to spiral along the field lines thereby creating regions of concentrated gas ionization.
- the ions are attracted to the two targets due to the electric field set up between the anode and cathode targets.
- Figure 1 is a schematic depiction of a sputter coating system 10 having two targets 12, 14 positioned relative to a substrate 16 for coating the substrate.
- a magnetic field that is depicted in Figure 1 by magnetic lines of force 20 concentrates ionization of a gas (argon for example) which is introduced into a chamber 11 defined in part by the targets 12, 14.
- a gas argon for example
- the magnetic field lines of force 20 shown in Figure 1 are generated by ferromagnetic pole pieces 22, 24 and the magnetic field contribution from am electromagnetic coil 26 that circumscribes a center pole piece 22.
- Current through the coil 26 as well as the sense of energization of the coil can be controlled by a power supply (not shown) coupled to the electromagnetic coil 26.
- the second support 80 is spaced from the grounded support 60 by an insulating ring 82, outwardly extending flanges 84 extend from the outer periphery of the support 80 and define three equally spaced openings to accommodate threaded connectors 88 that fix the support 80 to the support 60. Since the support 80 is biased at the negative potential of the outer target 14 an insulating washer 90 separates the grounded connector 88 from the support flange 84.
- the center target 12 is biased at a controlled negative voltage of approximately 400 volts d.c. by an insulated conductor 132.
- An electrical connector 134 couples the conductor 132 to the target 12 and a second electrical connector 136 is coupled to a connector 138 that passes through the support 60.
- Electrical isolation between this negative voltage carrying connector 138 and the support 60 is maintained by an insulating washer 140 that spaces the connector 138 from the support 60. Chamber isolation is maintained by "O" ring seals 142, 144 between the connector 138 and washer 140 and the washer 140 and support 60.
- a shield 170 spaced from the outer target 14 impedes material sputtered from the targets 12, 14 from coating the target cooling and biasing structure.
- the support 60 can be removed, leaving the outer shield 170 attached to the wall 50. The two targets 12, 14 are then replaced and the support 60 is re-installed.
- Table I shows examples of the power splitting achieved with a coil current of 10A and an argon pressure of 5 X 10 ⁇ 3 Torr.
- the target material is aluminum.
- a graph of aluminum film thickness versus radial distance from the target axis is presented in Figure 6. Substrates were placed at a distance of 2.44 ⁇ from the surface of the inner target. The power applied to the inner target was 0.6 kW and that applied to the outer target was 1.6 kW. +From the curve, a film thickness uniformity of ⁇ 2.2% was achieved across the inner 3 ⁇ radius. This zone corresponded to a 6 ⁇ diameter concentric substrate. Also from the curve, it can be seen that the average deposition rate was approximately 4,750 A/min with a total power of 2.2 kW.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
A sputter coating system utilizing a Penning type cathode. Inner and outer targets (12, 14) are concentrically oriented about an axis (32) that intersects a substrate (16) spaced from the targets. An electromagnet (26) produces a magnetic field in a region between the substrate and the targets that confines a plasma of ions relative the targets. An annular anode (30) that separates the two targets helps create an electric field that accelerates ions from the plasma to the targets where collisions between the ions and targets cause target material to sputter coat the substrate.
Description
- The present invention relates to a sputter coating cathode for coating a substrate and more particularly relates to a Penning type sputter cathode.
- One proposed fabrication technique for coating rigid magnetic disk memories is to sputter a ferro-magnetic material from a target onto a substrate to a controlled thickness and uniformity. This sputter coating is accomplished in an evacuated chamber having a controlled concentration of ionizable gas. Electrons moving in a confined region due to a magnetic field in the chamber ionize the gas in regions above the target and an electric field accelerates the charged ions toward the target with sufficient momentum to cause target material to be ejected when the ions collide with the target.
- Other than ferro-magnetic materials can be used for sputter coating. Integrated circuit can, for example, be fabricated by sputtering conductive layer or layers from a target onto a non-conductive substrate and then selectively etching the one or more conductive layers.
- U.S. Patent No. 4,629,548 to Helmer entitled "PLANAR PENNING MAGNETRON SPUTTERING DEVICE" discloses a Penning cathode for sputtering a material onto a substrate positioned relative to the cathode. Unlike a more conventional magnetron cathode, a Penning type cathode uses a cathode/anode structure and magnet combination that results in the magnetic field lines intersecting the cathode sputtering surface at generally right angles. If an ionizable gas in sufficient quantity is present in the vicinity of the cathode this causes ionizing electronis to spiral in the magnetic field and ionize the gas atoms. The charged gas ions are attracted to the cathode and impact the cathode to sputter off cathode material that then coats the substrate.
- In the Helmer patent, two sputtering cathode targets and a single anode are spaced symmetrically about a center axis passing through an inner one of the cathode targets. As disclosed in figure 4 of the Helmer patent the sputter surfaces of the two cathode targets are, at least initially, approximately co-planar. A thin cylindrical anode separates the two targets and extends beyond the co-planar surface of the targets to intersect the "line of sight" co-planer surface shared by the two cathode targets.
- Figure 3 of the Helmer patent is a graph of current versus voltage for different anode configurations and as indicated in this graph, the voltage applied to the target material becomes essentially independent of the current at high voltages. Figure 5 suggests that this independence between current and voltage is also experienced at different gas pressures. Since the measured current on the target is an indication of target erosion rate due to ion bombardment of the target, the Helmer construction results in a system wherein target erosion and therefore coating rate cannot be controlled (at least at high currents) by modifying the targets potential.
- The present invention relates to a Penning type cathode construction that is believed to have superior sputter coating characteristics to a cathode constructed in accordance with the teaching in the prior art '548 patent to Helmer. Target utilization during sputter coating is greater and control over coating uniformity can be more easily maintained.
- In accordance with a preferred embodiment of the invention, the coating apparatus includes a first consumable cathode target having a generally planar, circular emitting surface which is oriented generally parallel to a substrate coating plane. Radially outward from this first planar emitting surface or target is an annular anode which helps set up an electric field for attracting ionized gas atoms to the target. A second consumable target located radially outward from the center target has a sputter surface angled with respect to the coating plane.
- The combination of the two targets and the anode form a concave structure bounding the vicinity of gas ionization. Ionization is concentrated in regions defined by a magnet which sets up magnetic fields having lines of force which intersect the inner and outer targets. This magnetic field orientation causes ionizing electrons to spiral along the field lines thereby creating regions of concentrated gas ionization. The ions are attracted to the two targets due to the electric field set up between the anode and cathode targets.
- The anode has an inclined ring surface facing the plane of the substrate which does not disrupt "line of sight" interaction between the two cathode targets. By adjustment of the magnetic field lines in the region between target and substrate, it is possible to better utilize the cathode target material. In addition, the coating rate can be easily controlled since the sputtering ionization current of the disclosed cathode is sensitive to the bias between cathode and anode.
- In accordance with a preferred embodiment of the invention, the supporting structure for the sputter cathode includes magnetic pole pieces which define a magnetic field that can be adjusted by controlling current in an electromagnetic coil mounted coaxial with the magnetic pole pieces. By adjusting the current through this electromagnetic coil, the field strength in the vicinity of the inner and outer targets is controlled. The preferred cathode construction results in a stronger magnetic field above the inner target than the inclined annular target.
- From the above, one object of the invention is the use of a Penning type sputter cathode having targets for sputter coating a substrate. This and other objects, advantages and features of the invention will become better understood from a detailed description of a preferred embodiment of the invention which is described in conjunction with the accompanying drawings.
-
- Figure 1 is a schematic of a Penning type sputter coating cathode constructed in accordance with the invention;
- Figure 2 is a section view of a Penning type cathode depicted schematically in Figure 1;
- Figure 3 is a plan view of the Penning type cathode of Figure 2;
- Figure 3A and 3B are section views as seen from the planes of the
lines 3A-3A and 3B-3B in Figure 3; - Figure 4 is a graph showing magnetic field strengths in the vicinity of inner and outer targets as those strengths vary with electromagnetic coil energization;
- Figure 5 is a graph showing target discharge voltage versus target discharge current for different field strengths in the vicinity of the targets; and,
- Figure 6 is a graph showing aluminium material coating uniformity on a substrate utilizing a Penning type cathode structure constructed in accordance with the invention.
- Turning now the drawings, Figure 1 is a schematic depiction of a
sputter coating system 10 having twotargets substrate 16 for coating the substrate. A magnetic field that is depicted in Figure 1 by magnetic lines offorce 20 concentrates ionization of a gas (argon for example) which is introduced into a chamber 11 defined in part by thetargets - The magnetic field lines of
force 20 shown in Figure 1 are generated byferromagnetic pole pieces electromagnetic coil 26 that circumscribes acenter pole piece 22. Current through thecoil 26 as well as the sense of energization of the coil can be controlled by a power supply (not shown) coupled to theelectromagnetic coil 26. - Separating the two
targets annular anode 30 electrically isolated from the twotargets targets substrate 16. This ion bombardment causes target material to break loose from the targets and travel to the substrate, coating the substrate to a desired thickness. Such coating processes are used in fabricating integrated circuits and also used in coating magnetic computer disk memories. - The two targets 12, 14, the
anode 30, and the substrate are all oriented symmetrically about acenter axis 32 intersecting thecenter target 12. The target surfaces facing the substrate are initially generally planar, but with use, these surfaces erode in patterns that are to a great extent controlled by the magnetic field configuration in the region between thesubstrate 16 and thetargets coil 26 the magnetic field configuration is adjusted to modify target erosion at the twotargets coil 26 is energized to createmagnetic field lines 20 that connect the inner andouter targets anode 30. If the fluid lines intercept the anode, trapped ionizing electrons spiralling within the magnetic field will impact theanode 30 and be lost. This reduces the ionizing efficiency of the cathode. As seen from Figure 1, since themagnetic field lines 20 are bowed out next to theanode 30 the anode field defining surface could even be slightly convex without intercepting significant numbers of ionizing electrons. Thus, the statements concerning "line of sight" disruption between targets must be interpreted in view of the reason for this requirement. - Turning now to Figure 2, a section view of the
sputter coating system 10 schematically depicted in Figure 1 is mounted to aprocess chamber wall 50 defining a generally circular opening to accommodate mounting of thetargets - A substrate platen (not shown in the drawings) supports the substrate in a generally vertical orientation and serves to isolate the region between the
substrate 16 and targets 12, 14 to allow control over ionization gas concentration. In use, a controlled plasma of gas ions is formed in the chamber 11 between thesubstrate 16 and thetargets - As seen most clearly in Figure 2, a
cathode support 60 is coupled to thechamber wall 50 by threadedconnectors 62 passing through thesupport 60 to engage theprocess chamber wall 50. The environment within the process chamber 11 is isolated by an O-ring seal 64 supported by a groove machined into thecathode support 60. Thesupport 60 is electrically grounded. - The two
targets targets inner target 12 is electrically isolated from thesupport 60 by three electrically insulating spacer elements 70 that maintain a small gap between thecenter target 12 and thecathode support 60. The spacers 70 are threaded and engage corresponding threaded openings in thetarget 12 to support thetarget 12 in the vertical orientation shown in Figures 1 and 2. - The
inner target 12 is generally circular in plan and constructed of iron, aluminum, or other suitable material for coating a substrate. Theanode 30 is spaced from theinner target 12 by a second set of threadedinsulators 72 which electrically isolate the anode andinner target 12 and in addition, help support thetarget 12 in a spaced configuration from thesupport 60. - A
field defining surface 30a of theanode 30 is inclined relative to thesubstrate 16 and forms an annular portion of a generally concave cathode facing the substrate. A preferred angle between theanode surface 30a and the vertical oriented surface of thetarget 12 is approximately 15°. Theanode 30 is coupled to thesupport 60 by four equally spaced threadedconnectors 74 that engagestuds 75 attached to thesupport 60. Theseconnectors 74 are recessed beneath thefield defining surface 30a incylindrical cavities 76 to reduce the effect of theconnectors 74 on the ion accelerating electric field in the vicinity of theanode 30. - The section view of Figure 3A illustrates both a
preferred anode surface 30a and an alternative notchedanode surface 30b. In the notched configuration an inner portion of theanode surface 30b is substantially co-planar with an outwardly facing surface of theinner target 12. Theanode surface 30b then angles out toward the substrate to a point where the preferred and alternate anode configurations meet. - The
outer target 14 is spaced from theanode 30 by a smallcircular gap 78 which electrically separates theouter target 14 from theanode 30. Asecond target support 80, constructed of mild steel to extend thepole piece 24, has asupport surface 80a angled with respect to the planar substrate at an angle of approximately 45°. Thetarget 14 initially defines a sloped material emitting surface 14a which forms the 45° angle with respect to both thesubstrate 16 and thecenter target 12. - The
second support 80 is spaced from the groundedsupport 60 by an insulatingring 82, outwardly extendingflanges 84 extend from the outer periphery of thesupport 80 and define three equally spaced openings to accommodate threadedconnectors 88 that fix thesupport 80 to thesupport 60. Since thesupport 80 is biased at the negative potential of theouter target 14 an insulatingwasher 90 separates the groundedconnector 88 from thesupport flange 84. - As seen most clearly in Figure 2, the
magnetic pole pieces center axis 32 and coupled to thesupport 60 byconnectors pole pieces center pole piece 22 and electrically energized to modify the magnetic field in thechamber 10. This coil is coupled to a power supply (not shown) by conductors passing through amagnet end piece 110 fixed to themagnet pole pieces magnet pole pieces - During operation of the Penning cype cathode disclosed in Figures 2 and 3, the two
targets center target 12, a coolant (preferably water) is brought into thermal contact with the target. - A
conduit 112 delivers coolant to an entrance passageway 120 (Figure 3B) in the support via aninlet coupling 121. Asecond conduit 113 engages asecond coupling 122 spaced from thesupport 60 by an insulatingwasher 123. Theconduit 113 is routed throughpassageways outer target support 80 andanode 30 respectively. Theconduit 113 is bend in the form of a loop or coil that nearly surrounds and contacts an outwardly facing surface of thecenter target 12. Theanode 30 andsupport 80 also define passageways to route theconduit 113 through theanode 30 andsupport 80 to anexit passageway 126 through thesupport 60 where coolant heating by thecenter target 12 is routed away from the chamber 11. To maintain chamber isolation "O" rings 128 surround the entrance andexit passageways couplings washer 123. - As seen most clelarly in Figure 3A, the
center target 12 is biased at a controlled negative voltage of approximately 400 volts d.c. by aninsulated conductor 132. Anelectrical connector 134 couples theconductor 132 to thetarget 12 and a secondelectrical connector 136 is coupled to a connector 138 that passes through thesupport 60. Electrical isolation between this negative voltage carrying connector 138 and thesupport 60 is maintained by an insulatingwasher 140 that spaces the connector 138 from thesupport 60. Chamber isolation is maintained by "O" ring seals 142, 144 between the connector 138 andwasher 140 and thewasher 140 andsupport 60. - A
second conduit 150 carries a coolant into thermal contact with the secondouter target 14 by directing the coolant through aentryway 152 machined in thesupport 80 leading to anannular channel 154 machined in thesupport 80 that directs the coolant (preferably water) into direct contact with thetarget 14 to absorb and carry away accumulated heat due to ion bombardment of thetarget 14. Both anentry 156 andexit 158 passageway in thesupport 60 for routing theconduit 150 into and out of the chamber 11 are sealed with "O" ring seals 160 to maintain process chamber isolation. Thesupport 80 is fabricated by machining thechannel 154 into the body of thesupport 80 from thesupport surface 80a and then welding asteel insert 161 to thesupport 80 to form an enclosed annular channel within thesupport 80. - The
outer target 14 is fixed to thesupport 80 byclips 162 that overlie thetarget 14 at spaced locations and are connected to thesupport 80 by threadedconnectors 164 which are removed during target replacement. An insulatingconductor 166 is routed into thesupport 60 and electrically connected to an outer surface of thetarget 14. This allows theouter target 14 to be biased differently from theinner target 12. - A
shield 170 spaced from theouter target 14 impedes material sputtered from thetargets support 60 can be removed, leaving theouter shield 170 attached to thewall 50. The twotargets support 60 is re-installed. - The magnetic field lines depicted in Figure 1 are obtained with a coil current of 10 amperes. Field strength values measured immediately above the inner and
outer targets inner target 12 takes place predominantly from the planar area containing magnetic field lines common with theouter target 14. - Curves of discharge voltage, V, versus discharge current, I, are given in Figure 5 for two different coil currents. The electrical behaviour of sputtering cathodes is normally described by an equation of the form I = KVn where k is a constant and n is an exponent which is typically between 5 and 9 for a prior art magnetron cathode. The higher values of n, viz. between 16 and 32, obtained with the Penning arrangement of the invention indicate superior electron confinement.
- It is desirable to be able to independently control the power applied to the two
sputtering targets X 10⁻³ Torr. The target material is aluminum. Clearly, a considerable range of power ratios is available while maintaining reasonable target voltages.TABLE I INNER TARGET OUTER TARGET POWER (KWATTS) VOLTAGE (VOLTS) CURRENT (AMPS) POWER (KWATTS) VOLTAGE (VOLTS) CURRENT (AMPS) 0.2 308 0.62 1.2 606 1.94 0.4 468 0.84 1.2 450 2.60 0.6 656 0.90 1.2 427 2.74 - A graph of aluminum film thickness versus radial distance from the target axis is presented in Figure 6. Substrates were placed at a distance of 2.44˝ from the surface of the inner target. The power applied to the inner target was 0.6 kW and that applied to the outer target was 1.6 kW. +From the curve, a film thickness uniformity of ± 2.2% was achieved across the inner 3˝ radius. This zone corresponded to a 6˝ diameter concentric substrate. Also from the curve, it can be seen that the average deposition rate was approximately 4,750 A/min with a total power of 2.2 kW.
- One important consideration is material transfer efficiency, i.e., the proportion of sputtered material actually arriving on the substrate. The efficiency for the coating of Figure 6 was at least 45%, i.e., significantly higher than is normally achieved with conventional magnetron sputtering targets.
- Magnetron sputtering targets generally develop deep, relatively narrow erosion grooves which affect both thickness uniformity and target independence. Although only a limited amount of material was sputtered using the present cathode, it appeared that erosion occurred from broader area than is usually the case.
- The Figure 6 data was obtained using aluminum targets. Ferro-magnetic targets can also be used. It is the intent that although one embodiment of the invention has been described with a degree of particularity, that the invention encompass all modifica tions and alterations from the disclosed design falling within the spirit or scope of the appended claims.
Claims (10)
1. Apparatus for coating a substrate comprising:
a) a first consumable cathode target (12) having a generally planar, circular material emitting surface oriented generally parallel to and spaced from a coating plane for sputtering material onto a substrate surface substantially coincident with said coating plane; characterized by
b) an annular anode (30) that borders an outer periphery of the first consumable cathode target and defines an electric field defining surface inclined toward said substrate plane;
c) a second consumable cathode target (14) having an annular ring shaped material emitting surface inclined at an angle with respect to said coating plane for sputtering material onto the substrate surface at the coating plane;
d) field creating means (22, 24, 26) for creating a magnetic field in a region between the coating plane and the first and second consumable cathode targets to confine ionizing electrons in said region between the coating plane and the first and second cathode targets;
d) support means (60) for positioning said anode and said first and second consumable cathode targets in concentric relation about an axis (32) that intersects both said first consumable cathode target and said coating plane; and
f) energization means for electrically biasing said anode and said first and second consumable cathode targets at individually controllable bias potentials to control material coating distributions on said substrate surface during sputtering of target material from said circular and inclined material emitting surfaces.
2. The sputter coating apparatus of Claim 1 wherein said field creating means comprises and electromagnet (26) for generating a magnetic field wherein magnetic field lines intersect both said first and second consumable cathode targets at generally right angles to trap ionizing electrons above said circular and inclined material emitting surfaces.
3. The sputter coating apparatus of Claim 1 wherein the electric field defining surface (30a) of said annular anode (30) is inclined with respect to said generally planar, circular material emitting surface and forms an angle with the circular emitting surface that is less that the angle between the inclined material emitting surface of said second consumable cathode target and said generally planar, circular material emitting surface.
4. The sputter coating apparatus of Claim 1 wherein the first and second consumable targets are constructed from a ferro-magnetic material.
5. The apparatus of Claim 1 where the electric field defining surface (30a) of the anode (30) forms a uniform angle with a substrate coating plane from a point adjacent said first consumable cathode target to a point adjacent the second consumable cathode target.
6. The apparatus of Claim 1 where the electric field defining surface (30a) of the anode (30) is notched (30b) to form a first planar portion substantially co-planar with the first consumable cathode target and a second portion angled with respect to a substrate coating plane.
7. The apparatus of Claim 1 wherein the electric field defining surface (30a) of the anode (30) is slightly convex but does not significantly disrupt movement of ionizing electrons in the region between the coating plane and the first and second cathode targets.
8. Apparatus for coating a substrate comprising:
a) a first consumable cathode target (12) having a generally planar material emitting surface oriented generally parallel to and spaced from a coating plane for sputtering material onto a substrate surface substantially coincident with said coating plane; characterized by
b) an anode (30) that borders an outer periphery of the first consumable cathode target and defines an electric field defining surface inclined toward said substrate plane;
c) a second consumable cathode target (14) spaced radially outward from the anode having an inclined material emitting surface that borders an outer periphery of said anode and that is inclined at an angle with respect to said coating plane for sputtering material onto the substrate surface at the coating plane;
d) field defining means (22, 24, 26) for establishing a magnetic field in a region between the coating plane and the first and second consumable cathode targets to confine ionizing electrons in said region between the coating plane and the first and second cathode targets;
e) support means (60) for positioning said anode and said first and second consumable cathode targets in symmetric relation about an axis (32) that intersects a center region of said first consumable cathode target and said coating plane while electrically isolating the anode from said first and said second consumable cathode targets; and
f) energization means for electrically biasing said anode and said first and second consumable cathode targets at individually controllable bias potentials to control material coating distributions on said substrate surface during sputtering of target material from said planar and inclined material emitting surfaces.
9. The apparatus of Claim 8 wherein the support means (60) comprises a planar conductor element biasing the anode at a reference potential and first and second insulating spacer elements (70, 82) supporting the two consumable cathode targets in spaced relation to the planar conductor element, and wherein said field defining means comprises a ferro-magnetic support (80) between one of said insulating spacer elements and said second consumable cathode target.
10. The apparatus of Claim 8 further comprising a shield (170) radially outward from the second consumable cathode target for intercepting material sputtered from said first and second cathode targets.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US170753 | 1988-03-21 | ||
US07/170,753 US4810347A (en) | 1988-03-21 | 1988-03-21 | Penning type cathode for sputter coating |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0334564A2 true EP0334564A2 (en) | 1989-09-27 |
EP0334564A3 EP0334564A3 (en) | 1990-09-12 |
Family
ID=22621113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19890302687 Withdrawn EP0334564A3 (en) | 1988-03-21 | 1989-03-17 | Penning type cathode for sputter coating |
Country Status (4)
Country | Link |
---|---|
US (1) | US4810347A (en) |
EP (1) | EP0334564A3 (en) |
JP (1) | JPH028365A (en) |
KR (1) | KR890014781A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0482891A2 (en) * | 1990-10-22 | 1992-04-29 | Varian Associates, Inc. | High vacuum magnetron sputter source |
WO1996028584A1 (en) * | 1995-03-09 | 1996-09-19 | Hmt Technology Corporation | Target assembly having inner and outer targets |
DE19614595A1 (en) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Apparatus for cathode sputtering in substrate coating |
DE19614598A1 (en) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Cathode sputtering device |
US5863399A (en) * | 1996-04-13 | 1999-01-26 | Singulus Technologies Gmbh | Device for cathode sputtering |
DE19735469A1 (en) * | 1997-08-16 | 1999-02-18 | Leybold Materials Gmbh | Target for a sputter cathode |
WO2004107411A2 (en) * | 2003-05-23 | 2004-12-09 | Sputtered Films, Inc. | Deposition apparatus and method |
US8482375B2 (en) | 2009-05-24 | 2013-07-09 | Oem Group, Inc. | Sputter deposition of cermet resistor films with low temperature coefficient of resistance |
US8691057B2 (en) | 2008-03-25 | 2014-04-08 | Oem Group | Stress adjustment in reactive sputtering |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5080772A (en) * | 1990-08-24 | 1992-01-14 | Materials Research Corporation | Method of improving ion flux distribution uniformity on a substrate |
DE4123274C2 (en) * | 1991-07-13 | 1996-12-19 | Leybold Ag | Device for coating components or molded parts by sputtering |
US5378341A (en) * | 1993-10-13 | 1995-01-03 | The United States Of America As Represented By The Secretary Of The Air Force | Conical magnetron sputter source |
JPH09228038A (en) * | 1996-02-23 | 1997-09-02 | Balzers Prozes Syst Gmbh | Device for coating substrate by cathode sputtering provided with hollow target |
US6235170B1 (en) * | 1998-06-10 | 2001-05-22 | David A. Glocker | Conical sputtering target |
US6432286B1 (en) * | 1998-06-10 | 2002-08-13 | David A. Glocker | Conical sputtering target |
US6066242A (en) * | 1998-06-10 | 2000-05-23 | David A. Glocker | Conical sputtering target |
US6352626B1 (en) | 1999-04-19 | 2002-03-05 | Von Zweck Heimart | Sputter ion source for boron and other targets |
US6342133B2 (en) * | 2000-03-14 | 2002-01-29 | Novellus Systems, Inc. | PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter |
US7556718B2 (en) * | 2004-06-22 | 2009-07-07 | Tokyo Electron Limited | Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and wafer |
US20160322198A1 (en) * | 2015-04-30 | 2016-11-03 | Infineon Technologies Ag | Ion Source for Metal Implantation and Methods Thereof |
EP3091561B1 (en) | 2015-05-06 | 2019-09-04 | safematic GmbH | Sputter unit |
EP3091101B1 (en) | 2015-05-06 | 2018-10-17 | safematic GmbH | Coating unit |
WO2023111650A1 (en) * | 2021-12-16 | 2023-06-22 | Нако Текнолоджиз, Сиа | Target made of magnetic material for magnetron sputtering |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4434038A (en) * | 1980-09-15 | 1984-02-28 | Vac-Tec Systems, Inc. | Sputtering method and apparatus utilizing improved ion source |
EP0163445A1 (en) * | 1984-05-17 | 1985-12-04 | Varian Associates, Inc. | Magnetron sputter device having planar and concave targets |
US4604180A (en) * | 1984-01-20 | 1986-08-05 | Anelva Corporation | Target assembly capable of attaining a high step coverage ratio in a magnetron-type sputtering device |
EP0197770A2 (en) * | 1985-04-03 | 1986-10-15 | Varian Associates, Inc. | Planar penning magnetron sputtering device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL50072C (en) * | 1935-12-28 | |||
US3884793A (en) * | 1971-09-07 | 1975-05-20 | Telic Corp | Electrode type glow discharge apparatus |
HU179482B (en) * | 1979-02-19 | 1982-10-28 | Mikroelektronikai Valalat | Penning pulverizel source |
US4569746A (en) * | 1984-05-17 | 1986-02-11 | Varian Associates, Inc. | Magnetron sputter device using the same pole piece for coupling separate confining magnetic fields to separate targets subject to separate discharges |
US4606806A (en) * | 1984-05-17 | 1986-08-19 | Varian Associates, Inc. | Magnetron sputter device having planar and curved targets |
-
1988
- 1988-03-21 US US07/170,753 patent/US4810347A/en not_active Expired - Fee Related
-
1989
- 1989-03-17 EP EP19890302687 patent/EP0334564A3/en not_active Withdrawn
- 1989-03-20 JP JP1069117A patent/JPH028365A/en active Pending
- 1989-03-21 KR KR1019890003510A patent/KR890014781A/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4434038A (en) * | 1980-09-15 | 1984-02-28 | Vac-Tec Systems, Inc. | Sputtering method and apparatus utilizing improved ion source |
US4604180A (en) * | 1984-01-20 | 1986-08-05 | Anelva Corporation | Target assembly capable of attaining a high step coverage ratio in a magnetron-type sputtering device |
EP0163445A1 (en) * | 1984-05-17 | 1985-12-04 | Varian Associates, Inc. | Magnetron sputter device having planar and concave targets |
EP0197770A2 (en) * | 1985-04-03 | 1986-10-15 | Varian Associates, Inc. | Planar penning magnetron sputtering device |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0482891A3 (en) * | 1990-10-22 | 1992-06-17 | Varian Associates, Inc. | High vacuum magnetron sputter source |
EP0482891A2 (en) * | 1990-10-22 | 1992-04-29 | Varian Associates, Inc. | High vacuum magnetron sputter source |
WO1996028584A1 (en) * | 1995-03-09 | 1996-09-19 | Hmt Technology Corporation | Target assembly having inner and outer targets |
US6096180A (en) * | 1996-04-13 | 2000-08-01 | Singulus Technologies Ag | Cathodic sputtering device |
DE19614595A1 (en) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Apparatus for cathode sputtering in substrate coating |
DE19614598A1 (en) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Cathode sputtering device |
US5863399A (en) * | 1996-04-13 | 1999-01-26 | Singulus Technologies Gmbh | Device for cathode sputtering |
DE19735469A1 (en) * | 1997-08-16 | 1999-02-18 | Leybold Materials Gmbh | Target for a sputter cathode |
WO2004107411A2 (en) * | 2003-05-23 | 2004-12-09 | Sputtered Films, Inc. | Deposition apparatus and method |
WO2004107411A3 (en) * | 2003-05-23 | 2005-12-29 | Sputtered Films Inc | Deposition apparatus and method |
US7179350B2 (en) | 2003-05-23 | 2007-02-20 | Tegal Corporation | Reactive sputtering of silicon nitride films by RF supported DC magnetron |
US8691057B2 (en) | 2008-03-25 | 2014-04-08 | Oem Group | Stress adjustment in reactive sputtering |
US8808513B2 (en) | 2008-03-25 | 2014-08-19 | Oem Group, Inc | Stress adjustment in reactive sputtering |
US8482375B2 (en) | 2009-05-24 | 2013-07-09 | Oem Group, Inc. | Sputter deposition of cermet resistor films with low temperature coefficient of resistance |
Also Published As
Publication number | Publication date |
---|---|
KR890014781A (en) | 1989-10-25 |
US4810347A (en) | 1989-03-07 |
EP0334564A3 (en) | 1990-09-12 |
JPH028365A (en) | 1990-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4810347A (en) | Penning type cathode for sputter coating | |
US6197165B1 (en) | Method and apparatus for ionized physical vapor deposition | |
US6254745B1 (en) | Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source | |
US6080287A (en) | Method and apparatus for ionized physical vapor deposition | |
KR100659828B1 (en) | Method and apparatus for ionized physical vapor deposition | |
US5800688A (en) | Apparatus for ionized sputtering | |
EP0051635B1 (en) | Sputter target and glow discharge coating apparatus | |
JP3775689B2 (en) | Method and apparatus for ionizing sputtering of materials | |
US4842703A (en) | Magnetron cathode and method for sputter coating | |
EP0162642B1 (en) | Magnetron sputter device using the same pole piece for coupling separate confining magnetic field to separate targets subject to separate discharges | |
EP0275021B1 (en) | Sputtering process and an apparatus for carrying out the same | |
US4606806A (en) | Magnetron sputter device having planar and curved targets | |
US6238537B1 (en) | Ion assisted deposition source | |
US20070119701A1 (en) | High-Power Pulsed Magnetron Sputtering | |
JPH0510422B2 (en) | ||
US3669860A (en) | Method and apparatus for applying a film to a substrate surface by diode sputtering | |
KR890004171B1 (en) | Vacuum sputtering device | |
US5330632A (en) | Apparatus for cathode sputtering | |
US4620081A (en) | Self-contained hot-hollow cathode gun source assembly | |
US6864486B2 (en) | Ion sources | |
EP0544831B1 (en) | Sputtering apparatus and sputtering method of improving ion flux distribution uniformity on a substrate | |
EP0715336A2 (en) | Method and apparatus for planar magnetron sputtering | |
WO2000003055A1 (en) | Shield for ionized physical vapor deposition apparatus | |
EP0848081A2 (en) | Method and apparatus for physical vapour deposition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB IT NL |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): DE FR GB IT NL |
|
17P | Request for examination filed |
Effective date: 19901107 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Withdrawal date: 19911007 |