IT8323382A0 - Apparecchiatura di vaporizzazione ionica. - Google Patents
Apparecchiatura di vaporizzazione ionica.Info
- Publication number
- IT8323382A0 IT8323382A0 IT8323382A IT2338283A IT8323382A0 IT 8323382 A0 IT8323382 A0 IT 8323382A0 IT 8323382 A IT8323382 A IT 8323382A IT 2338283 A IT2338283 A IT 2338283A IT 8323382 A0 IT8323382 A0 IT 8323382A0
- Authority
- IT
- Italy
- Prior art keywords
- ionic
- vaporization equipment
- vaporization
- equipment
- ionic vaporization
- Prior art date
Links
- 230000008016 vaporization Effects 0.000 title 1
- 238000009834 vaporization Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
- Helmets And Other Head Coverings (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57184577A JPS5976875A (ja) | 1982-10-22 | 1982-10-22 | マグネトロン型スパッタ装置とそれに用いるターゲット |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8323382A0 true IT8323382A0 (it) | 1983-10-20 |
IT1169862B IT1169862B (it) | 1987-06-03 |
Family
ID=16155636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8323382A IT1169862B (it) | 1982-10-22 | 1983-10-20 | Apparecchiatura di vaporizzazione ionica |
Country Status (10)
Country | Link |
---|---|
US (1) | US4547279A (it) |
JP (1) | JPS5976875A (it) |
KR (1) | KR840006557A (it) |
DE (1) | DE3338377A1 (it) |
FR (1) | FR2535109A1 (it) |
GB (1) | GB2129021B (it) |
HK (1) | HK488A (it) |
IT (1) | IT1169862B (it) |
MY (1) | MY8700801A (it) |
SG (1) | SG87987G (it) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2476384B1 (fr) * | 1980-02-18 | 1985-11-29 | Teco Sa | Perfectionnements a un disjoncteur de securite a enclenchement manuel et a organes de deverrouillage magnetiques et thermiques |
NL185372C (nl) * | 1980-02-18 | 1990-03-16 | Teco Societe Anonyme | Meerpolige elektrische veiligheidsschakelaar. |
US4515675A (en) * | 1983-07-06 | 1985-05-07 | Leybold-Heraeus Gmbh | Magnetron cathode for cathodic evaportion apparatus |
NL8402012A (nl) * | 1983-07-19 | 1985-02-18 | Varian Associates | Magnetron spetter deklaag opbrengbron voor zowel magnetische als niet-magnetische trefplaatmaterialen. |
DE3442206A1 (de) * | 1983-12-05 | 1985-07-11 | Leybold-Heraeus GmbH, 5000 Köln | Magnetronkatode zum zerstaeuben ferromagnetischer targets |
US4486287A (en) * | 1984-02-06 | 1984-12-04 | Fournier Paul R | Cross-field diode sputtering target assembly |
US4606806A (en) * | 1984-05-17 | 1986-08-19 | Varian Associates, Inc. | Magnetron sputter device having planar and curved targets |
DE163445T1 (de) * | 1984-05-17 | 1986-05-22 | Varian Associates, Inc., Palo Alto, Calif. | Magnetron-zerstaeubungs-vorrichtung mit ebenen und konkaven auftreffplatten. |
US4627904A (en) * | 1984-05-17 | 1986-12-09 | Varian Associates, Inc. | Magnetron sputter device having separate confining magnetic fields to separate targets and magnetically enhanced R.F. bias |
US4569746A (en) * | 1984-05-17 | 1986-02-11 | Varian Associates, Inc. | Magnetron sputter device using the same pole piece for coupling separate confining magnetic fields to separate targets subject to separate discharges |
US4661228A (en) * | 1984-05-17 | 1987-04-28 | Varian Associates, Inc. | Apparatus and method for manufacturing planarized aluminum films |
US4610774A (en) * | 1984-11-14 | 1986-09-09 | Hitachi, Ltd. | Target for sputtering |
JPS61183467A (ja) * | 1985-02-08 | 1986-08-16 | Hitachi Ltd | スパッタリング方法及びその装置 |
US4855033A (en) * | 1986-04-04 | 1989-08-08 | Materials Research Corporation | Cathode and target design for a sputter coating apparatus |
CA1308060C (en) * | 1986-04-04 | 1992-09-29 | Tokyo Electron Limited | Cathode and target design for a sputter coating apparatus |
US4834860A (en) * | 1987-07-01 | 1989-05-30 | The Boc Group, Inc. | Magnetron sputtering targets |
GB2209769A (en) * | 1987-09-16 | 1989-05-24 | Ion Tech Ltd | Sputter coating |
JPH0246854U (it) * | 1988-09-19 | 1990-03-30 | ||
DE3919147C2 (de) * | 1989-06-12 | 1998-01-15 | Leybold Ag | Verfahren zum Beschichten eines Kunststoffsubstrats mit Aluminium |
US5403663A (en) * | 1989-06-12 | 1995-04-04 | Leybold Aktiengesellschaft | Process for coating a polycarbonate substrate with an aluminum-silicon alloy |
JP3047917B2 (ja) * | 1989-10-20 | 2000-06-05 | 東京エレクトロン株式会社 | スパッタ用ターゲット及びスパッタ方法 |
JPH0733576B2 (ja) * | 1989-11-29 | 1995-04-12 | 株式会社日立製作所 | スパツタ装置、及びターゲツト交換装置、並びにその交換方法 |
JPH03191058A (ja) * | 1989-12-19 | 1991-08-21 | Toshiba Corp | スパッタリング装置 |
US5080772A (en) * | 1990-08-24 | 1992-01-14 | Materials Research Corporation | Method of improving ion flux distribution uniformity on a substrate |
JPH04114210U (ja) * | 1991-03-26 | 1992-10-07 | 日立化成工業株式会社 | 平面アンテナのハウジング構造 |
US5334302A (en) * | 1991-11-15 | 1994-08-02 | Tokyo Electron Limited | Magnetron sputtering apparatus and sputtering gun for use in the same |
DE9217937U1 (it) * | 1992-01-29 | 1993-04-01 | Leybold Ag, 6450 Hanau, De | |
US6605198B1 (en) * | 1993-07-22 | 2003-08-12 | Sputtered Films, Inc. | Apparatus for, and method of, depositing a film on a substrate |
EP0661728B1 (en) * | 1993-12-28 | 1997-06-11 | Shin-Etsu Chemical Co., Ltd. | Dipole ring magnet for use in magnetron sputtering or magnetron etching |
EP0704878A1 (en) * | 1994-09-27 | 1996-04-03 | Applied Materials, Inc. | Uniform film thickness deposition of sputtered materials |
US5697827A (en) * | 1996-01-11 | 1997-12-16 | Rabinowitz; Mario | Emissive flat panel display with improved regenerative cathode |
GB9606920D0 (en) * | 1996-04-02 | 1996-06-05 | Applied Vision Ltd | Magnet array for magnetrons |
US5863399A (en) * | 1996-04-13 | 1999-01-26 | Singulus Technologies Gmbh | Device for cathode sputtering |
DE19614595A1 (de) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Vorrichtung zur Kathodenzerstäubung |
DE19614598A1 (de) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Vorrichtung zur Kathodenzerstäubung |
US6042706A (en) * | 1997-01-14 | 2000-03-28 | Applied Materials, Inc. | Ionized PVD source to produce uniform low-particle deposition |
US5985115A (en) | 1997-04-11 | 1999-11-16 | Novellus Systems, Inc. | Internally cooled target assembly for magnetron sputtering |
KR19990023327A (ko) * | 1997-08-05 | 1999-03-25 | 토마스 엠. 알바레즈 | 제 1 및 제 2 재료를 기판상에 증착하는 장치 및 방법 |
TW460599B (en) * | 1998-01-14 | 2001-10-21 | Toshiba Corp | Method for forming fine wiring pattern |
US6217716B1 (en) | 1998-05-06 | 2001-04-17 | Novellus Systems, Inc. | Apparatus and method for improving target erosion in hollow cathode magnetron sputter source |
JP2000098582A (ja) * | 1998-09-17 | 2000-04-07 | Ulvac Seimaku Kk | 位相シフトフォトマスクブランクス、位相シフトフォトマスク及びそれらの製造方法、並びに該ブランクスの製造装置 |
US6783638B2 (en) | 2001-09-07 | 2004-08-31 | Sputtered Films, Inc. | Flat magnetron |
US6846396B2 (en) * | 2002-08-08 | 2005-01-25 | Applied Materials, Inc. | Active magnetic shielding |
US20080083611A1 (en) * | 2006-10-06 | 2008-04-10 | Tegal Corporation | High-adhesive backside metallization |
US8808513B2 (en) * | 2008-03-25 | 2014-08-19 | Oem Group, Inc | Stress adjustment in reactive sputtering |
US20090246385A1 (en) * | 2008-03-25 | 2009-10-01 | Tegal Corporation | Control of crystal orientation and stress in sputter deposited thin films |
WO2010129180A2 (en) * | 2009-04-28 | 2010-11-11 | Ferrotec (Usa) Corporation | Lift-off deposition system featuring a density optimized hula substrate holder in a conical dep0sition chamber |
US8482375B2 (en) * | 2009-05-24 | 2013-07-09 | Oem Group, Inc. | Sputter deposition of cermet resistor films with low temperature coefficient of resistance |
JP6244103B2 (ja) | 2012-05-04 | 2017-12-06 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | 反応性スパッタ堆積のための方法および反応性スパッタ堆積システム |
JP5343162B1 (ja) * | 2012-10-26 | 2013-11-13 | エピクルー株式会社 | エピタキシャル成長装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4046659A (en) * | 1974-05-10 | 1977-09-06 | Airco, Inc. | Method for coating a substrate |
US4060470A (en) * | 1974-12-06 | 1977-11-29 | Clarke Peter J | Sputtering apparatus and method |
US4100055A (en) * | 1977-06-10 | 1978-07-11 | Varian Associates, Inc. | Target profile for sputtering apparatus |
US4169031A (en) * | 1978-01-13 | 1979-09-25 | Polyohm, Inc. | Magnetron sputter cathode assembly |
US4219397A (en) * | 1978-11-24 | 1980-08-26 | Clarke Peter J | Magnetron sputter apparatus |
HU179482B (en) * | 1979-02-19 | 1982-10-28 | Mikroelektronikai Valalat | Penning pulverizel source |
GB2058143B (en) * | 1979-07-31 | 1983-11-02 | Nordiko Ltd | Sputtering electrodes |
US4457825A (en) * | 1980-05-16 | 1984-07-03 | Varian Associates, Inc. | Sputter target for use in a sputter coating source |
US4461688A (en) * | 1980-06-23 | 1984-07-24 | Vac-Tec Systems, Inc. | Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method |
US4401539A (en) * | 1981-01-30 | 1983-08-30 | Hitachi, Ltd. | Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure |
US4422896A (en) * | 1982-01-26 | 1983-12-27 | Materials Research Corporation | Magnetically enhanced plasma process and apparatus |
US4414086A (en) * | 1982-11-05 | 1983-11-08 | Varian Associates, Inc. | Magnetic targets for use in sputter coating apparatus |
US4428816A (en) * | 1983-05-25 | 1984-01-31 | Materials Research Corporation | Focusing magnetron sputtering apparatus |
-
1982
- 1982-10-22 JP JP57184577A patent/JPS5976875A/ja active Granted
-
1983
- 1983-08-04 FR FR8312887A patent/FR2535109A1/fr not_active Withdrawn
- 1983-09-06 KR KR1019830004180A patent/KR840006557A/ko not_active Application Discontinuation
- 1983-10-20 IT IT8323382A patent/IT1169862B/it active
- 1983-10-21 GB GB08328208A patent/GB2129021B/en not_active Expired
- 1983-10-21 DE DE19833338377 patent/DE3338377A1/de not_active Withdrawn
-
1984
- 1984-11-21 US US06/673,928 patent/US4547279A/en not_active Expired - Lifetime
-
1987
- 1987-10-12 SG SG879/87A patent/SG87987G/en unknown
- 1987-12-30 MY MY801/87A patent/MY8700801A/xx unknown
-
1988
- 1988-01-07 HK HK4/88A patent/HK488A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US4547279A (en) | 1985-10-15 |
KR840006557A (ko) | 1984-11-30 |
IT1169862B (it) | 1987-06-03 |
GB8328208D0 (en) | 1983-11-23 |
MY8700801A (en) | 1987-12-31 |
GB2129021B (en) | 1986-09-10 |
HK488A (en) | 1988-01-15 |
JPH021909B2 (it) | 1990-01-16 |
SG87987G (en) | 1988-06-03 |
GB2129021A (en) | 1984-05-10 |
FR2535109A1 (fr) | 1984-04-27 |
JPS5976875A (ja) | 1984-05-02 |
DE3338377A1 (de) | 1984-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19951026 |