JPS5973834A - Etching method of shadow mask - Google Patents

Etching method of shadow mask

Info

Publication number
JPS5973834A
JPS5973834A JP18274682A JP18274682A JPS5973834A JP S5973834 A JPS5973834 A JP S5973834A JP 18274682 A JP18274682 A JP 18274682A JP 18274682 A JP18274682 A JP 18274682A JP S5973834 A JPS5973834 A JP S5973834A
Authority
JP
Japan
Prior art keywords
shadow mask
etching
hole section
hole
small hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18274682A
Other languages
Japanese (ja)
Other versions
JPH0430134B2 (en
Inventor
Yutaka Tanaka
裕 田中
Yasuhisa Otake
大竹 康久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP18274682A priority Critical patent/JPS5973834A/en
Publication of JPS5973834A publication Critical patent/JPS5973834A/en
Publication of JPH0430134B2 publication Critical patent/JPH0430134B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/14Manufacture of electrodes or electrode systems of non-emitting electrodes
    • H01J9/142Manufacture of electrodes or electrode systems of non-emitting electrodes of shadow-masks for colour television tubes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To form a resistance layer with no pin hole or buble and bore an electron beam pass hole section with extremely excellent quality by removing a photosensitive film only on one side after the first etching process, forming an etching liquid resistant layer, and etching the other face. CONSTITUTION:Small hole and large hole patterns are formed on both faces of a shadow mask raw material 21, and the first etching is performed until the opening diameter of a small hole section 6 is made D3, and a shallow large hole section 271 is etched from a large hole formation section 25. The face formed with the large hole section 271 is covered with a sheet 31 and a photosensitive film 22 of a small hole section 26 on the opposite face is removed, and an etching liquid resistant layer 28 is formed on the face of the raw material 21 including the inside of the small hole section 26. The second etching forming the large hole section 27 with a diameter D4 is performed, and the resistance layer 28 in the small hole section 26 is exposed to form an electron beam pass hole with a predetermined diamter. The resistance layer 28 and a photosensitive film 23 are removed, and a shadow mask is completed. Accordingly, the defect of the electron beam pass hole section due to a pin hole or a bubble is reduced to nil, and a shadow mask with extremely excellent quality can be obtained.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明はカラーブラウン管に使用されるシャドウマスク
の製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a shadow mask used in a color cathode ray tube.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

カラーブラウン管に使用されるシャドウマスクは次の様
な工程で製造される。
Shadow masks used in color cathode ray tubes are manufactured through the following process.

即ち、シャドウマスク素材の両主面に感光液を塗布する
工程と、この感光液を成膜化して感光膜とする乾燥工程
と、この感光膜に所定のネガノくターンを有するネガ原
板を密着して露光する工程と、未露光部を除去する現像
工程と、露光部の耐エツチング液特性、シャドウマスク
素材と密着性を良くするバーユング工程と、露光部をマ
スクとしてエツチングし電子ビーム通過孔、部を穿設す
るエツチング工程と、感光膜を除去しフラットマスクを
形成する工程及びフラットマスクをプレス加工によりシ
ャドウマスクに形成する工程とからなっている。
That is, a process of applying a photosensitive liquid to both main surfaces of the shadow mask material, a drying process of forming the photosensitive liquid into a film to form a photosensitive film, and a process of adhering a negative master plate having a predetermined negative turn to the photosensitive film. a developing process to remove unexposed areas; a burning process to improve the etching liquid resistance of the exposed areas and adhesion to the shadow mask material; and an etching process using the exposed areas as a mask to form electron beam passage holes and parts. The process consists of an etching process for forming a hole, a process for removing the photoresist film to form a flat mask, and a process for forming the flat mask into a shadow mask by press working.

一方、カラーブラウン管は一般家庭用とモニターやディ
スプレイ用など、その用途が多岐にわたっておシ、この
うち一般家庭用は別としてモニターやディスプレイ用の
カラーブラウン管は極めて微細な画質が要求されている
ため、これらに使用するシャドウマスクの電子ビーム通
過孔部は高精度、且つ微細なものが要求されている。
On the other hand, color cathode ray tubes have a wide variety of uses, including for general home use and for monitors and displays.Aside from general home use, color cathode ray tubes for monitors and displays require extremely fine image quality. The electron beam passage hole portion of the shadow mask used for these is required to be highly precise and minute.

次に本発明のシャドウマスクの製造方法に最も近い従来
例である特公昭57−26345号公報によるシャドウ
マスクの製造方法を第1図乃至第5図により説明する。
Next, a method of manufacturing a shadow mask according to Japanese Patent Publication No. 57-26345, which is the closest conventional method to the method of manufacturing a shadow mask of the present invention, will be explained with reference to FIGS. 1 to 5.

先ず長尺の軟鋼板やアンバー板などからなるンヤドウマ
スク素材(1)の両主面に感光膜(21(3)をそれぞ
れ被着形成したのち、大孔用ネガパターン、小孔用ネガ
パターンを有するネガ原板を密接させ、露光工程、現像
工程を経て第1図に示すように感光膜(2)に直径(d
l)の小孔形成部(4)と、感光膜(3)に直径(d、
)の大孔形成部(5)との感光膜(2) (3)を除去
し、小孔形成部(4)と大孔形成部(5)を除き光硬化
された感光膜(2) (3)を残存させる。
First, a photoresist film (21 (3)) is formed on both main surfaces of a mask material (1) made of a long mild steel plate or an amber plate, and then a negative pattern for large holes and a negative pattern for small holes are formed. The negative original plate is brought into close contact with the photoresist film (2) through an exposure process and a development process, as shown in Figure 1.
The diameter (d,
) and the photoresist film (2) (3) with the large hole forming part (5) are removed, and the photoresist film (2) (3) is photocured except for the small hole forming part (4) and the large hole forming part (5). 3) remain.

次に第2図に示すようにシャドウマスク素材(1)の両
主面からエツチング液をスプレィ方法にょシ吹きつけ小
孔部(6)の開口部径が(Dl)になる迄エツチングす
る。勿論、この場合には大孔形成部(5)からも浅い大
孔部(71)がエツチングされる。
Next, as shown in FIG. 2, an etching solution is sprayed onto both main surfaces of the shadow mask material (1) to etch the small holes (6) until the opening diameter becomes (Dl). Of course, in this case, a shallow large hole portion (71) is also etched from the large hole forming portion (5).

次に第3図に示すように小孔部(6)内も含めて感光膜
(2)上にエツチング液の抵抗層(8)を形成する。
Next, as shown in FIG. 3, a resistive layer (8) of etching solution is formed on the photoresist film (2), including inside the small holes (6).

次に第4図に示すように主として浅い大孔部(4,)側
ミシエッチング液をスプレィ方法により吹きつけ小孔部
(6)内に形成された抵抗層(8)に達し、かつ小孔部
(6)の開口部径(Dl)を乱すことがないように拡大
した大孔部(7)を、開口部径が(D2)になるまでエ
ツチングし、水洗、乾燥後抵抗層(8)及び感光膜(2
)(3)を除去し、第5図に示すような所定の電子ビー
ム通過孔部(9)が穿設されたシャドウマスク(実際に
はフラットマスク)が完成する。
Next, as shown in Fig. 4, the etching liquid is mainly sprayed on the side of the shallow large hole (4,) to reach the resistance layer (8) formed inside the small hole (6) and to completely remove the small hole. The large hole part (7), which has been enlarged without disturbing the opening diameter (Dl) of the part (6), is etched until the opening diameter becomes (D2), and after washing and drying, the resistive layer (8) is formed. and photoresist film (2
) and (3) are removed, and a shadow mask (actually a flat mask) having predetermined electron beam passage holes (9) as shown in FIG. 5 is completed.

このようなシャドウマスクの製造方法によると電子ビー
ム通過孔部(9)の断面形状が安定し、また小孔部(6
)の開口部径(6,9も例えば140土Sμmのほらつ
きしかなく、また小孔部(6)の深さくt、)も安定し
更に小孔部(6)のサイドエツチング量も約20〜30
μmと少なく良好な電子ビーム通過孔部(9)を穿設す
ることが可能であると云っているが、実際には抵抗層(
8)をスプレィ方法で形成するため、サイドエツチング
によシ残存した感光膜(2)のひさし部(21)ができ
、小孔部(6)内に完全に抵抗層(8)を充填すること
が困難であシピンホールや泡など(It)が発生し易く
、このため大孔部(刀の形成時に、これらピンホールや
泡などから小孔部(6)内にエツチング液が入シ結果と
して電子ビーム通過孔部(9)の欠陥が起シ易いという
問題点があった。
According to such a method of manufacturing a shadow mask, the cross-sectional shape of the electron beam passing hole (9) is stabilized, and the small hole (6) is stabilized.
) opening diameter (6 and 9, for example, only has a looseness of 140 Sμm, and the depth of the small hole (6) t) is also stable, and the amount of side etching of the small hole (6) is also about 20 μm. ~30
Although it is said that it is possible to form a good electron beam passage hole (9) as small as μm, in reality, the resistive layer (
8) is formed by a spray method, so that the eaves (21) of the photoresist film (2) that remains after side etching are formed, and the small holes (6) are completely filled with the resistive layer (8). It is difficult to do this and pinholes, bubbles, etc. (It) are likely to occur, and for this reason, when forming the large hole (sword), the etching solution enters the small hole (6) through these pinholes and bubbles, resulting in the formation of electrons. There was a problem in that the beam passage hole (9) was easily defective.

〔発明の目的〕[Purpose of the invention]

本発明は前述した従来の諸問題に鑑みなされたものであ
シ、抵抗層をピンホールや泡などなく形成し極めて品位
の良好な電子ビーム通過孔部が穿設されたシャドウマス
クを得ることが可能なシャドウマスクの製造方法を提供
することを目的としている。
The present invention has been made in view of the above-mentioned conventional problems, and it is possible to obtain a shadow mask in which a resistive layer is formed without pinholes or bubbles, and in which electron beam passage holes are formed with extremely high quality. The purpose of the present invention is to provide a method for manufacturing a shadow mask.

〔発明の概要〕[Summary of the invention]

即ち、シャドウマスク素材の両主面にそれぞれ小孔形成
部及び大孔形成部を除き感光膜を残存させる工程と、小
孔形成部または大孔形成部のいずれか一方からエツチン
グにょシ所望深さの第1の孔部を形成する第1のエツチ
ング工程と、水洗、及び乾燥工程後、第1の孔部の形成
された主面と異なるシャドウマスク素材の主面上をシー
トにょシ被覆する工程と、第1の孔部の形成されたシャ
ドウマスク素材の感光膜を除去し、第1の孔部内及びシ
ャドウマスク素材上に耐エツチング液の抵抗層を形成す
る工程と、シートを除去しこのシートの被覆されていた
主面よレボ孔形成部または大孔形成部を介して抵抗層を
露出し、所定径の電子ビーム通過孔部を形成するように
エツチングする第2のエツチング工程とを具備すること
を特徴とするシャドウマスクの製造方法である。
That is, a process of leaving a photoresist film on both main surfaces of the shadow mask material except for the small hole forming part and the large hole forming part, respectively, and etching from either the small hole forming part or the large hole forming part to a desired depth. After the first etching step of forming the first holes, and the washing and drying steps, the step of covering the main surface of the shadow mask material different from the main surface on which the first holes are formed with a sheet with a sheet. , removing the photoresist film of the shadow mask material in which the first hole has been formed, and forming a resistive layer of an etching resistant solution in the first hole and on the shadow mask material; and removing the sheet. a second etching step in which the resistive layer is exposed from the coated main surface through the rev hole forming portion or the large hole forming portion, and is etched to form an electron beam passing hole portion having a predetermined diameter. This is a method for manufacturing a shadow mask characterized by the following.

〔発明の実施例〕[Embodiments of the invention]

次に本発明のシャドウマスクの製造方法の一実施例を第
6図′乃至第10図により説明する。
Next, an embodiment of the shadow mask manufacturing method of the present invention will be described with reference to FIGS. 6' to 10.

先ず長尺の軟鋼板やアンバー板などからなるシャドウマ
スク素材Qυの両主面に感光膜t2a f7!3)をそ
れぞれ被着形成したのち、この感光膜(2a+、:□□
□上に小孔用ネガパターンを有するネガ原板及び大孔用
ネガパターンを有するネガ原板を密接させ露光工程、現
像工程を経て第6図に示すように感光膜(2?Jに直径
(d、)の小孔形成部(24)と、感光膜(23)に直
径(d4)の大孔形成部(25)との感光膜(24G!
31を除去し、小孔形成部ρ荀と大孔形成MB (25
1を除き光硬化された感光膜(27J(23を残存させ
る。
First, a photoresist film t2a f7!3) is formed on both main surfaces of a shadow mask material Qυ made of a long mild steel plate or an amber plate, and then this photoresist film (2a+, :□□
□ A negative master plate having a negative pattern for small holes and a negative master plate having a negative pattern for large holes are brought into close contact with each other and subjected to an exposure process and a development process to form a photoresist film (diameter (d, ) and a photoresist film (24G!) with a small hole forming part (24) of diameter (d4) and a large hole forming part (25) of diameter (d4) on the photoresist film (23).
31 is removed, and the small hole forming part ρX and the large hole forming part MB (25
The photoresist film (27J) was photocured except for 1 (23 remained).

次に第7図に示すようにシャドウマスク素材(2υの両
生面からエツチング液をスプレィ方法により吹きつけ小
孔部(6)の開口部径が(D3)になる造築1のエツチ
ングを行なう。勿論、この場合には大孔形成部c2暖か
らも浅い大孔部(271)がエツチングされる。
Next, as shown in FIG. 7, the etching solution is sprayed from the two sides of the shadow mask material (2υ) to etch the structure 1 so that the opening diameter of the small hole (6) becomes (D3). Of course, in this case, a shallow large hole portion (271) is also etched from the large hole forming portion c2.

次に第8図に示すように浅い大孔部(271)が形成さ
れたシャドウマスクの主面をマグネティック・シー)(
3υで被僅し80℃の濃度15q6の苛性ソーダ浴液を
小孔部(4)の形成された主面からスプレィし。
Next, as shown in FIG.
A caustic soda bath solution with a concentration of 15q6 and a temperature of 80°C was sprayed from the main surface where the small holes (4) were formed.

感光膜C21を除去し水洗、乾燥を行なう。The photoresist film C21 is removed, washed with water, and dried.

次に第9図に示すように小孔部(Jfi)内も含めてシ
ャドウマスク素材(2υの主面上にエツチング液の抵抗
層例を形成する。この抵抗層(2榎としては、第1に水
溶液レジスト例えば富士薬品工業■製カゼインT8−5
と重クロム酸アンモニウムを重量%で約100 : 1
とし、水で稀釈して比重1.0400に調製したもの、
第2に和信化学工業KK Lacquer 418クリ
ヤーと鷹3000シンナーを重量%で1:2に調製した
もの、第3にマイクロ・クリスタリン・ワックス209
5・ 渡辺油業KK製を使用して良好な結果が得られた
Next, as shown in FIG. Aqueous resist such as casein T8-5 manufactured by Fuji Pharmaceutical Co., Ltd.
and ammonium dichromate in a weight percent of approximately 100:1.
and diluted with water to have a specific gravity of 1.0400,
The second was Wasshin Chemical Industry KK Lacquer 418 clear and Taka 3000 thinner prepared in a ratio of 1:2 by weight, and the third was Micro Crystalline Wax 209.
5. Good results were obtained using Watanabe Yugyo KK.

このように抵抗層例が形成された主面とは異なる主面か
らエツチング液をスプレィ方法で吹きつけ、径(D4)
の大孔部(27)を形成する第2のエツチングを行なう
が、このエツチング量は小孔部(2(19内の抵抗層2
1を露出させ所定径の電子ビーム通過孔部を形成するこ
とが必要である。
In this way, the etching solution is sprayed from a main surface different from the main surface on which the resistive layer example is formed, and the diameter (D4) is
A second etching is performed to form the large hole (27), but the amount of this etching is smaller than the small hole (2 (2) in the resistive layer 2
It is necessary to expose the electron beam 1 and form an electron beam passage hole having a predetermined diameter.

次に抵抗層(2→及び感光膜CA)を除去し、第1()
図に示すような所定の電子ビーム通過孔部(2噂が穿設
されたシャドウマスク(実際にはフラットマスク)が完
成する。この電子ビーム通過孔部(29)は例えば(D
s)が90μm(Di)が180μmと極めて微細なも
のである。
Next, the resistive layer (2→ and photoresist film CA) is removed, and the first ()
A shadow mask (actually a flat mask) in which a predetermined electron beam passing hole (29) is drilled as shown in the figure is completed.
s) is 90 μm (Di) is 180 μm, which is extremely fine.

本実施例のシャドウマスクの製造方法によれば、従来の
ように感光膜(2)のひさし部(2,)によるピンホー
ルや泡などの発生が皆無となシ極めて品位の良好なシャ
ドウマスクが得られるようになる。
According to the shadow mask manufacturing method of this embodiment, there is no generation of pinholes or bubbles caused by the eaves (2,) of the photoresist film (2) as in the conventional method, and a shadow mask of extremely high quality can be produced. You will be able to get it.

前記実施例では第7図に示すようにシャドウマスク素材
の両生面から小孔部と浅い大孔部を形成したのち、浅い
大孔部側のシャドウマスク素材の主面をシートによシ被
覆したがこれに限定されるものではなく第、6図の状態
即ち第1のエツチング工程前に大孔部側のシャドウマス
ク素材の主面をシートによシ被覆して小孔部のみをエツ
チングにより形成したのち抵抗層を形成してもよいし、
また抵抗層を小孔部側ではなく大孔部側に設けても同様
であるが、実際に電子ビーム通過孔部の径を決定するの
は小孔部の開口部に極めて近い位置であるので前の実施
例のようにすることが望ましい。
In the above example, as shown in FIG. 7, after forming small holes and shallow large holes on both sides of the shadow mask material, the main surface of the shadow mask material on the shallow large hole side was covered with a sheet. However, the present invention is not limited to this, and the state shown in FIG. 6, that is, before the first etching process, the main surface of the shadow mask material on the large hole side is covered with a sheet, and only the small holes are formed by etching. After that, a resistance layer may be formed,
The same effect can be achieved even if the resistance layer is provided on the large hole side rather than on the small hole side, but the diameter of the electron beam passage hole is actually determined at a position extremely close to the opening of the small hole. It is preferable to do as in the previous embodiment.

またシートとしては実施例ではマグネティックシートを
使用したがこれに限定されるものでもなく耐薬品性の有
機フィルムを使用し、フラットマスク外でシャドウマス
ク素材に接着剤を介して密着させる方法なども使用され
ることも勿論である。
In addition, although a magnetic sheet was used as the sheet in the example, it is not limited to this; a chemical-resistant organic film may also be used, and a method of adhering it to the shadow mask material via adhesive outside of the flat mask may also be used. Of course, it is also possible.

〔発明の効果〕〔Effect of the invention〕

上述のように本発明のシャドウマスクの製造方法によれ
ば抵抗層の孔部内における密着性がよく、ピンホールや
泡などによる電子ビーム通過孔部の欠陥を皆無にし、極
めて品位の良好なシャドウマスクを得ることが出来るの
で、その工業的価値は極めて大である。
As described above, the shadow mask manufacturing method of the present invention has good adhesion within the holes of the resistive layer, eliminates defects such as pinholes and bubbles in the electron beam passage holes, and produces a shadow mask of extremely high quality. can be obtained, so its industrial value is extremely large.

【図面の簡単な説明】[Brief explanation of drawings]

第1図乃至第5図は従来のシャドウマスクの製造方法の
一例を工程順に示す説明用断面図、第6図乃至第10図
は本発明のシャドウマスクの製造方法の一実施例を工程
順に示す説明用断面図である。 1.21・・・シャドウマスク素材 2 、3 、22 、23・・・感光膜4.24・−小
孔形成部 5,25 大孔形成部6・・・小孔部   
  7,27・・・大孔部7+ 、 27+・・・浅い
大孔部 8.28・・・抵抗層   9.29・・・電子ビーム
通過孔部31・・・マグネティックシート
1 to 5 are explanatory cross-sectional views showing an example of a conventional method for manufacturing a shadow mask in the order of steps, and FIGS. 6 to 10 are sectional views showing an example of the method for manufacturing a shadow mask of the present invention in order of steps. It is a sectional view for explanation. 1.21...Shadow mask material 2, 3, 22, 23...Photoresist film 4.24--Small hole forming part 5,25 Large hole forming part 6...Small hole part
7, 27...Large hole 7+, 27+...Shallow large hole 8.28...Resistance layer 9.29...Electron beam passage hole 31...Magnetic sheet

Claims (1)

【特許請求の範囲】[Claims] シャドウマスク素材の両主面にそれぞれ小孔形成部及び
大孔形成部を除き感光膜を残存させる工程と、前記小孔
形成部または大孔形成部のいずれか一方からエツチング
によシ所望深さの第1の孔と異なる前記シャドウマスク
素材の主面上をシートによシ被覆する工程と、前記第1
の孔部の形成された前記シャドウマスク素材の感光膜を
除去し、前記第1の孔部内及び前記シャドウマスク素材
上に耐エツチング液の抵抗層を形成する工程と、前記シ
ートを除去し、前記シートの被覆されていた主面より前
記小孔形成部または大孔形成部を介して前記抵抗層を露
出し、所定径の電子ビーム通過孔部を形成するようにエ
ツチングする第2のエツチング工程とを具備することを
特徴とするシャドウマスクの製造方法。
A step of leaving a photosensitive film on both main surfaces of the shadow mask material except for the small hole forming portion and the large hole forming portion, respectively, and etching from either the small hole forming portion or the large hole forming portion to a desired depth. a step of covering a main surface of the shadow mask material different from the first hole with a sheet;
removing the photoresist film of the shadow mask material in which the holes are formed and forming a resistive layer of an etching resistant solution in the first holes and on the shadow mask material; removing the sheet; a second etching step of exposing the resistive layer from the coated main surface of the sheet through the small hole forming portion or the large hole forming portion and etching to form an electron beam passing hole portion of a predetermined diameter; A method for producing a shadow mask, comprising:
JP18274682A 1982-10-20 1982-10-20 Etching method of shadow mask Granted JPS5973834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18274682A JPS5973834A (en) 1982-10-20 1982-10-20 Etching method of shadow mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18274682A JPS5973834A (en) 1982-10-20 1982-10-20 Etching method of shadow mask

Publications (2)

Publication Number Publication Date
JPS5973834A true JPS5973834A (en) 1984-04-26
JPH0430134B2 JPH0430134B2 (en) 1992-05-20

Family

ID=16123707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18274682A Granted JPS5973834A (en) 1982-10-20 1982-10-20 Etching method of shadow mask

Country Status (1)

Country Link
JP (1) JPS5973834A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103841A (en) * 1988-10-11 1990-04-16 Toshiba Corp Manufacture of shadow mask
JPH059755A (en) * 1990-09-20 1993-01-19 Dainippon Screen Mfg Co Ltd Method for forming fine through-hole in metallic thin sheet
US5200025A (en) * 1990-09-20 1993-04-06 Dainippon Screen Manufacturing Co. Ltd. Method of forming small through-holes in thin metal plate
US5336587A (en) * 1988-05-24 1994-08-09 Kabushiki Kaisha Toshiba Method of manufacturing main plates for exposure printing

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101219622B1 (en) * 2010-08-04 2013-01-08 김석중 Homogeneous charge compression ignition type two strokes engine

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5336587A (en) * 1988-05-24 1994-08-09 Kabushiki Kaisha Toshiba Method of manufacturing main plates for exposure printing
JPH02103841A (en) * 1988-10-11 1990-04-16 Toshiba Corp Manufacture of shadow mask
JPH059755A (en) * 1990-09-20 1993-01-19 Dainippon Screen Mfg Co Ltd Method for forming fine through-hole in metallic thin sheet
US5200025A (en) * 1990-09-20 1993-04-06 Dainippon Screen Manufacturing Co. Ltd. Method of forming small through-holes in thin metal plate

Also Published As

Publication number Publication date
JPH0430134B2 (en) 1992-05-20

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