JPH0430134B2 - - Google Patents
Info
- Publication number
- JPH0430134B2 JPH0430134B2 JP18274682A JP18274682A JPH0430134B2 JP H0430134 B2 JPH0430134 B2 JP H0430134B2 JP 18274682 A JP18274682 A JP 18274682A JP 18274682 A JP18274682 A JP 18274682A JP H0430134 B2 JPH0430134 B2 JP H0430134B2
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- etching
- hole forming
- photoresist film
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 42
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 27
- 238000010894 electron beam technology Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 1
- 239000005018 casein Substances 0.000 description 1
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 1
- 235000021240 caseins Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000004200 microcrystalline wax Substances 0.000 description 1
- 229940114937 microcrystalline wax Drugs 0.000 description 1
- 235000019808 microcrystalline wax Nutrition 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
- H01J9/142—Manufacture of electrodes or electrode systems of non-emitting electrodes of shadow-masks for colour television tubes
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はカラーブラウン管に使用されるシヤド
ウマスクの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a shadow mask used in a color cathode ray tube.
カラーブラウン管に使用されるシヤドウマスク
は次の様な工程で製造される。
Shadow masks used in color cathode ray tubes are manufactured through the following process.
即ち、シヤドウマスク素材の両主面に感光液を
塗布する工程と、この感光液を成膜して感光膜と
する乾燥工程と、この感光膜に所定のネガパター
ンを有するネガ原板を密着して露光する工程と、
未露光部を除去する現像工程と、露光部の耐エツ
チング液特性及びシヤドウマスク素材との密着性
を良くするバーニング工程と、露光部をマスクと
してエツチングし、電子ビーム通過孔部を穿設す
るエツチング工程と、感光膜を除去し、フラツト
マスクを形成する工程及びフラツトマスクをプレ
ス加工によりシヤドウマスクに成形する工程とに
より製造される。 That is, a process of applying a photosensitive liquid to both main surfaces of the shadow mask material, a drying process of forming a film of this photosensitive liquid to form a photosensitive film, and a process of exposing a negative original plate having a predetermined negative pattern to this photosensitive film in close contact with it. The process of
A developing process to remove the unexposed area, a burning process to improve the etching liquid resistance of the exposed area and adhesion to the shadow mask material, and an etching process to use the exposed area as a mask to create electron beam passage holes. The photoresist film is removed to form a flat mask, and the flat mask is formed into a shadow mask by press working.
一方、カラーブラウン管は一般家庭用とモニタ
ーやデイスプレイ用など、その用途が多岐にわた
つており、このうち一般家庭用は別として、モニ
ターやデイスプレイ用のカラーブラウン管は極め
て微細な画質が要求されるため、これらに使用さ
れるシヤドウマスクの電子ビーム通過孔部は高精
度且つ微細なものが要求されている。 On the other hand, color cathode ray tubes have a wide variety of uses, including for general home use and for monitors and displays.Aside from general home use, color cathode ray tubes for monitors and displays require extremely fine image quality. The electron beam passage holes of the shadow masks used in these devices are required to be highly precise and minute.
次に本発明のシヤドウマスクの製造方法に最も
近い従来例である特公昭57−26345号公報による
シヤドウマスクの製造方法を第１図乃至第５図に
より説明する。 Next, a method of manufacturing a shadow mask according to Japanese Patent Publication No. 57-26345, which is the closest conventional method to the method of manufacturing a shadow mask of the present invention, will be explained with reference to FIGS. 1 to 5.
先ず長尺の軟鋼板やアンバー板などからなるシ
ヤドウマスク素材の両主面に感光膜をそれぞれ被
着形成したのち、大孔用ネガパターン、小孔用ネ
ガパターンを有するネガ原板を密接して焼付ける
露光工程、現像工程を経て、第１図に示すように
直径d1の小孔形成部４と直経d2の大孔形成部５の
感光膜を除去し、シヤドウマスク素材１の両主面
の小孔形成部４及び大孔形成部５以外の部分に光
硬化した感光膜２，３を形成する。 First, a photoresist film is formed on both main surfaces of a shadow mask material made of a long mild steel plate or an amber plate, and then a negative original plate having a negative pattern for large holes and a negative pattern for small holes is printed closely together. After an exposure process and a development process, the photoresist film in the small hole forming part 4 with diameter d 1 and the large hole forming part 5 with direct diameter d 2 is removed, as shown in FIG. Photocured photoresist films 2 and 3 are formed on portions other than the small hole forming portion 4 and the large hole forming portion 5.
次に第２図に示すようにシヤドウマスク素材１
の両主面にエツチング液をスプレイ方法により吹
きつけ、小孔部６の開口部径がD1になる迄エツ
チングする。この場合大孔形成部５からも浅い大
孔部７1がエツチングされる。 Next, as shown in Figure 2, the shadow mask material 1 is
An etching solution is sprayed onto both main surfaces of the substrate and etched until the opening diameter of the small hole 6 becomes D1 . In this case, a shallow large hole portion 7 1 is also etched from the large hole forming portion 5 .
次に第３図に示すように小孔部６内も含めて感
光膜２上にエツチング液抵抗層８を形成する。 Next, as shown in FIG. 3, an etching solution resistance layer 8 is formed on the photoresist film 2, including inside the small holes 6.
次に第４図に示すように主として浅い大孔部７
１側よりエツチング液をスプレイ方法により吹き
つけて、小孔部６内に形成された抵抗層８に達
し、かつ小孔部６の開口部径D1を乱すことがな
いように開口部径D2の拡大した大孔部７をエツ
チングし、水洗、乾燥後抵抗層８及び感光膜２，
３を除去して、第５図に示すような所定の電子ビ
ーム通過孔部９が穿設されたシヤドウマスク（実
際にはフラツトマスク）とする。 Next, as shown in Fig. 4, the large hole 7 is mainly shallow.
The etching solution is sprayed from the side 1 by a spray method to reach the resistance layer 8 formed in the small hole 6, and the opening diameter D is adjusted so as not to disturb the opening diameter D1 of the small hole 6. After etching the enlarged large hole 7 of 2 , washing with water, and drying, the resistive layer 8 and the photoresist film 2,
3 is removed to obtain a shadow mask (actually a flat mask) having a predetermined electron beam passage hole 9 as shown in FIG.
このようなシヤドウマスクの製造方法による
と、電子ビーム通過孔部９の断面形状が安定し、
また小孔部６の開口部径D1が例えば140±5μmの
ばらつきしかなく、また小孔部６の深さt1も安定
し、更に小孔部６のサイドエツチング量も約20〜
30μmと少ない良好な電子ビーム通過孔部９を穿
設することが可能である。しかし実際には抵抗層
８をスプレイ方法で形成するため、サイドエツチ
ングにより小孔部６の周辺部上に形成される感光
膜２のひさし部２1（第３図参照）のために、小
孔部６内に完全に抵抗層８を充填することが困難
であり、ピンホールや泡など１０が発生し易い。
このため大孔部７の形成時にこれらピンホールや
泡などから小孔部６内にエツチング液が入り、そ
の結果電子ビーム通過孔部９の欠陥が起り易いと
いう問題がある。 According to such a method of manufacturing a shadow mask, the cross-sectional shape of the electron beam passage hole 9 is stabilized,
In addition, the opening diameter D 1 of the small hole 6 varies by only 140±5 μm, the depth t 1 of the small hole 6 is stable, and the amount of side etching of the small hole 6 is about 20 to 5 μm.
It is possible to form a good electron beam passage hole 9 as small as 30 μm. However, in reality, since the resistive layer 8 is formed by a spray method, the eaves 2 1 of the photoresist film 2 (see FIG. 3), which are formed on the periphery of the small holes 6 by side etching, are formed by the small holes. It is difficult to completely fill the portion 6 with the resistance layer 8, and pinholes, bubbles, etc. 10 are likely to occur.
For this reason, when forming the large hole 7, the etching liquid enters the small hole 6 through these pinholes, bubbles, etc., and as a result, there is a problem that defects in the electron beam passage hole 9 are likely to occur.
本発明は前述した従来の問題に鑑みなされたも
のであり、抵抗層をピンホールや泡などがないよ
うに形成し、極めて品位の良好な電子ビーム通過
孔部の穿設されたシヤドウマスクを得ることが可
能なシヤドウマスクの製造方法を提供することを
目的としている。
The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to form a resistive layer without pinholes or bubbles, and to obtain a shadow mask with extremely high quality electron beam passage holes. The purpose of the present invention is to provide a method for manufacturing a shadow mask that enables the following.
即ち、シヤドウマスク素材の両主面にそれぞれ
小孔形成部及び大孔形成部を除いた部分に感光膜
を形成する工程と、小孔形成部及び大孔形成部の
少なくとも一方を介してエツチングにより少なく
とも一方の主面に所望深さの孔部を形成する第１
のエツチング工程と、水洗乾燥後、孔部の形成さ
れた一方の主面と異なる他方の主面をシートによ
り被覆する工程と、一方の主面に形成された感光
膜を除去し、孔部内及び前記一方の主面にエツチ
ング液抵抗層を形成する工程と、他方の主面のシ
ートを除去し、この他方の主面から大孔形成部ま
たは小孔形成部を介してエツチングによりエツチ
ング液抵抗層を露出させて所定径の電子ビーム通
過孔部を形成する第２のエツチング工程と、エツ
チング液抵抗層及び他方の主面の感光膜を除去す
る工程とを具備することを特徴とするシヤドウマ
スクの製造方法。
That is, a process of forming a photoresist film on both main surfaces of the shadow mask material except for the small hole forming part and the large hole forming part, and etching at least one of the small hole forming part and the large hole forming part. A first hole having a desired depth is formed on one main surface.
After washing with water and drying, the other main surface different from the one on which the hole is formed is covered with a sheet, and the photoresist film formed on one main surface is removed, and the inside of the hole and the other main surface are covered with a sheet. The step of forming an etching solution resistance layer on one of the main surfaces, and removing the sheet on the other main surface, and etching the etching solution resistance layer from the other main surface through the large hole forming part or the small hole forming part. manufacturing a shadow mask, comprising: a second etching step of exposing the electron beam to form an electron beam passing hole portion of a predetermined diameter; and a step of removing the etching solution resistance layer and the photoresist film on the other main surface. Method.
及び、シヤドウマスク素材の両主面にそれぞれ
小孔形成部及び大孔形成部を除いた部分に感光膜
を形成する工程と、小孔形成部及び大孔形成部の
一方を介して一方の主面をエツチングする前にこ
の一方の主面と異なる他方の主面をシートにより
被覆する工程と、小孔形成部及び大孔形成部の一
方を介してエツチングにより一方の主面に所望深
さの孔部を形成する第１のエツチング工程と、一
方の主面に形成された感光膜を除去し、孔部内及
び一方の主面にエツチング液抵抗層を形成する工
程と、他方の主面のシートを除去し、この他方の
主面から大孔形成部または小孔形成部を介してエ
ツチングによりエツチング液抵抗層を露出させて
所定径の電子ビーム通過孔部を形成する第２のエ
ツチング工程と、エツチング液抵抗層及び他方の
主面の感光膜を除去する工程とを具備することを
特徴とするシヤドウマスクの製造方法である。。 and a step of forming a photoresist film on both main surfaces of the shadow mask material except for the small hole forming part and the large hole forming part, respectively, and forming a photoresist film on one main surface through one of the small hole forming part and the large hole forming part. Before etching, the other main surface, which is different from the one main surface, is covered with a sheet, and a hole of a desired depth is formed on one main surface by etching through one of the small hole forming part and the large hole forming part. a first etching step to form a sheet on the other main surface, a step of removing the photoresist film formed on one main surface and forming an etching liquid resistance layer in the hole and on one main surface; a second etching step in which the etching solution resistance layer is exposed by etching from the other main surface through the large hole forming portion or the small hole forming portion to form an electron beam passing hole portion having a predetermined diameter; A method for manufacturing a shadow mask, comprising a step of removing a liquid resistance layer and a photoresist film on the other main surface. .
次に本発明のシヤドウマスクの製造方法の一実
施例を第６図乃至第１０図により説明する。
Next, an embodiment of the method for manufacturing a shadow mask according to the present invention will be described with reference to FIGS. 6 to 10.
先ず長尺の軟鋼板やアンバー板などからなるシ
ヤドウマスク素材の両主面に感光膜をそれぞれ被
着形成したのち、この感光膜上に小孔用ネガパタ
ーンを有するネガ原板及び大孔用ネガパターンを
有するネガ原板を密接して焼付ける露光工程、現
像工程を経て、第６図に示すように直径d3の小孔
形成部２４と直径d4の大孔形成部２５の感光膜を
除去し、シヤドウマスク素材２１の両主面の小孔
形成部２４と大孔形成部２５以外の部分に光硬化
した感光膜２２，２３を形成する。 First, a photoresist film is formed on both main surfaces of a shadow mask material made of a long mild steel plate or an amber plate, and then a negative master plate having a negative pattern for small holes and a negative pattern for large holes are formed on the photoresist film. After going through an exposure process and a development process in which the negative original plate with the original plate is printed in close contact with each other, the photoresist film in the small hole forming part 24 with a diameter d 3 and the large hole forming part 25 with a diameter d 4 is removed, as shown in FIG. Photocured photoresist films 22 and 23 are formed on both main surfaces of the shadow mask material 21 at portions other than the small hole forming portions 24 and the large hole forming portions 25.
次に第７図に示すようにシヤドウマスク素材２
１の両主面にエツチング液をスプレイ方法により
吹きつけ、第１の主面の小孔部６の開口部径が
D3になる迄第１のエツチングを行なう。この場
合第２の主面の大孔形成部２５からは浅い大孔部
２７1がエツチングされる。 Next, as shown in Fig. 7, the shadow mask material 2 is
An etching solution is sprayed onto both main surfaces of the first main surface, and the opening diameter of the small hole 6 on the first main surface is
Perform the first etching until D3 . In this case, a shallow large hole portion 27 1 is etched from the large hole forming portion 25 on the second main surface.
次に第８図に示すように浅い大孔部２７1が形
成された第２の主面をマグネテイツク・シート３
１で被覆し、80℃、濃度15％の苛性ソーダ溶液を
小孔部２６の形成された第１の主面にスプレイし
て、感光膜２２を除去し、水洗、乾燥する。 Next, as shown in FIG .
The photoresist film 22 is removed by spraying a caustic soda solution of 15% concentration at 80° C. onto the first main surface in which the small holes 26 are formed, followed by washing with water and drying.
次に第９図に示すように小孔部２６内も含めて
第１の主面にエツチング液抵抗層２８を形成す
る。この抵抗層２８としては、第１に水溶液レジ
スト例えば富士薬品工業KK製カゼインTS−５
と重クロム酸アンモニウムを重量％で約100：１
とし、水で稀釈して比重1.0400に調製したもの、
第２に和信化学工業KKLacquer No.18クリヤー
とNo.3000シンナーを重量％で１：２に調製したも
の、第３にマイクロ・クリスタリン・ワツクス
2095（渡辺油業KK製）を使用して良好な結果が
得られた。 Next, as shown in FIG. 9, an etching liquid resistance layer 28 is formed on the first main surface including the inside of the small hole 26. This resistance layer 28 is first made of an aqueous resist such as Casein TS-5 manufactured by Fuji Pharmaceutical Co., Ltd.
and ammonium dichromate in a ratio of approximately 100:1 by weight.
and diluted with water to have a specific gravity of 1.0400,
Second, Wasshin Chemical Industry KKLacquer No.18 Clear and No.3000 Thinner prepared in a ratio of 1:2 by weight, and third, Micro Crystalline Wax.
Good results were obtained using 2095 (manufactured by Watanabe Yugyo KK).
このような抵抗層２８の形成された第１の主面
とは異なる第２の主面にエツチング液をスプレイ
方法で吹きつけ、開口部径D4の大孔部２７を形
成する第２のエツチングを行なう。このエツチン
グにより小孔部２６内の抵抗層２８を露出させ、
所定性の電子ビーム通過孔部を形成する。 A second etching process is performed in which a large hole 27 having an opening diameter D 4 is formed by spraying an etching liquid onto a second main surface different from the first main surface on which the resistance layer 28 is formed. Do this. This etching exposes the resistance layer 28 inside the small hole 26,
A predetermined electron beam passage hole is formed.
次に抵抗層２８及び感光膜２３を除去し、第１
０図に示すように所定の電子ビーム通過孔部２９
の穿設されたシヤドウマスク（実際にはフラツト
マスク）とする。この電子ビーム通過孔部２９は
例えばD3が90μm、D4が180μmと極めて微細なも
のである。 Next, the resistive layer 28 and the photoresist film 23 are removed, and the first
As shown in Figure 0, a predetermined electron beam passage hole 29
A shadow mask (actually a flat mask) with perforations. This electron beam passage hole 29 is extremely fine, with D 3 being 90 μm and D 4 being 180 μm, for example.
この本実施例のシヤドウマスクの製造方法によ
れば、従来のように感光膜２のひさし部２1によ
るピンホールや泡などの発生が皆無となり、極め
て品位の良好なシヤドウマスクが得られるように
なる。 According to the method of manufacturing a shadow mask of this embodiment, there is no occurrence of pinholes or bubbles due to the eaves 21 of the photoresist film 2, unlike in the conventional method, and a shadow mask of extremely high quality can be obtained.
前記実施例では第７図に示したようにシヤドウ
マスク素材の両主面から小孔部と浅い大孔部を形
成したのち、浅い大孔部側の第２の主面をシート
により被覆したが、これに限定されるものではな
く、第６図の状態即ち第１のエツチング工程前に
大孔部側の第２の主面をシートにより被覆して小
孔部のみをエツチングにより形成し、この小孔部
の形成された第１の主面の感光膜を除去したの
ち、抵抗層を形成し、その後シートを除去して第
２の主面よりエツチングしてもよいし、また抵抗
層を小孔部側ではなく、大孔部側に設けても同様
の結果が得られる。しかし実際に電子ビーム通過
孔部の径を決定するのは小孔部の開口部に極めて
近い位置であるので、前の実施例のようにするこ
とが望ましい。またシートとしては実施例ではマ
グネテイツク・シートを使用したが、これに限定
されるものでもなく、耐薬品性の有機フイルムを
使用し、電子ビーム通過孔の形成される部分外で
シヤドウマスク素材に接着剤により接着する方法
なども利用できることも勿論である。 In the above embodiment, as shown in FIG. 7, after forming small holes and shallow large holes on both main surfaces of the shadow mask material, the second main surface on the shallow large hole side was covered with a sheet. However, the method is not limited to this, and in the state shown in FIG. After removing the photoresist film on the first main surface where the holes are formed, the resistive layer may be formed, and then the sheet may be removed and etched from the second main surface, or the resistive layer may be etched with the small holes. A similar result can be obtained even if it is provided on the large hole side instead of on the part side. However, since the diameter of the electron beam passage hole is actually determined at a position very close to the opening of the small hole, it is desirable to use the same method as in the previous embodiment. In addition, although a magnetic sheet was used as the sheet in the embodiment, it is not limited to this.A chemical-resistant organic film may be used, and adhesive may be applied to the shadow mask material outside the area where the electron beam passage hole is formed. Of course, it is also possible to use methods such as bonding.
上述のように本発明のシヤドウマスクの製造方
法によれば、抵抗層の孔部内における密着性がよ
く、ピンホールや泡などによる電子ビーム通過孔
部の欠陥を皆無にし、極めて品位の良好なシヤド
ウマスクが得られるので、その工業的価値は極め
て大である。
As described above, according to the method for manufacturing a shadow mask of the present invention, a shadow mask with excellent adhesion in the holes of the resistive layer, no defects such as pinholes or bubbles in the electron beam passage holes, and extremely high quality can be produced. Therefore, its industrial value is extremely large.
第１図乃至第５図は従来のシヤドウマスクの製
造方法の一例を工程順に示す説明用断面図、第６
図乃至第１０図は本発明のシヤドウマスクの製造
方法の一実施例を工程順に示す説明用断面図であ
る。
１，２１……シヤドウマスク素材、２，３，２
２，２３……感光膜、４，２４……小孔形成部、
５，２５……大孔形成部、６，２６……小孔部、
７，２７……大孔部、７1，２７1……浅い大孔
部、８，２８……抵抗層、９，２９……電子ビー
ム通過孔部、３１……マグネテイツク・シート。
1 to 5 are explanatory cross-sectional views showing an example of a conventional shadow mask manufacturing method in the order of steps;
10A to 10C are explanatory cross-sectional views showing one embodiment of the method for manufacturing a shadow mask according to the present invention in the order of steps. 1,21...Shadow mask material, 2,3,2
2, 23... Photoresist film, 4, 24... Small pore forming part,
5, 25...Large hole forming part, 6,26...Small hole part,
7, 27...Large hole, 7 1 , 27 1 ... Shallow large hole, 8, 28... Resistance layer, 9, 29... Electron beam passage hole, 31... Magnetic sheet.
Claims (1)
形成部及び大孔形成部を除いた部分に感光膜を形
成する工程と、前記小孔形成部及び大孔形成部の
少なくとも一方を介してエツチングにより少なく
とも一方の主面に所望深さの孔部を形成する第１
のエツチング工程と、水洗乾燥後、前記孔部の形
成された一方の主面と異なる他方の主面をシート
により被覆する工程と、前記一方の主面に形成さ
れた感光膜を除去し、前記孔部内及び前記一方の
主面にエツチング液抵抗層を形成する工程と、前
記他方の主面のシートを除去し、この他方の主面
から前記大孔形成部または小孔形成部を介してエ
ツチングにより前記エツチング液抵抗層を露出さ
せて所定径の電子ビーム通過孔部を形成する第２
のエツチング工程と、前記エツチング液抵抗層及
び前記他方の主面の感光膜を除去する工程とを具
備することを特徴とするシヤドウマスクの製造方
法。 ２ シヤドウマスク素材の両主面にそれぞれ小孔
形成部及び大孔形成部を除いた部分に感光膜を形
成する工程と、前記小孔形成部及び大孔形成部の
一方を介して一方の主面をエツチングする前にこ
の一方の主面と異なる他方の主面をシートにより
被覆する工程と、前記小孔形成部及び大孔形成部
の一方を介してエツチングにより一方の主面に所
望深さの孔部を形成する第１のエツチング工程
と、前記一方の主面に形成された感光膜を除去
し、前記孔部内及び前記一方の主面にエツチング
液抵抗層を形成する工程と、前記他方の主面のシ
ートを除去し、この他方の主面から前記大孔形成
部または小孔形成部を介してエツチングにより前
記エツチング液抵抗層を露出させて所定径の電子
ビーム通過孔部を形成する第２のエツチング工程
と、前記エツチング液抵抗層及び前記他方の主面
の感光膜を除去する工程とを具備することを特徴
とするシヤドウマスクの製造方法。[Scope of Claims] 1. A step of forming a photoresist film on both main surfaces of a shadow mask material, excluding the small hole forming portion and the large hole forming portion, respectively, and at least one of the small hole forming portion and the large hole forming portion. A first hole having a desired depth is formed on at least one main surface by etching through the first hole.
etching step, washing with water and drying, and then covering the other main surface with a sheet, which is different from the one main surface on which the holes are formed, removing the photoresist film formed on the one main surface, and removing the photoresist film formed on the one main surface; forming an etching solution resistance layer in the hole and on the one main surface, removing the sheet on the other main surface, and etching from the other main surface through the large hole forming section or the small hole forming section; a second step of exposing the etching solution resistance layer to form an electron beam passage hole having a predetermined diameter;
A method for manufacturing a shadow mask, comprising: an etching step; and a step of removing the etching solution resistance layer and the photoresist film on the other main surface. 2. Forming a photoresist film on both main surfaces of the shadow mask material excluding the small hole forming part and the large hole forming part, respectively, and forming a photoresist film on one main surface through one of the small hole forming part and the large hole forming part. Before etching, the other main surface, which is different from the one main surface, is covered with a sheet, and one main surface is etched to a desired depth through one of the small hole forming part and the large hole forming part. a first etching step of forming a hole; a step of removing the photoresist film formed on the one main surface; and forming an etching solution resistance layer in the hole and on the one main surface; The first step is to remove the sheet on the main surface and expose the etching liquid resistance layer from the other main surface by etching through the large hole forming section or the small hole forming section to form an electron beam passing hole section with a predetermined diameter. 2. A method for manufacturing a shadow mask, comprising: step 2 of etching; and a step of removing the etching solution resistance layer and the photoresist film on the other main surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18274682A JPS5973834A (en) | 1982-10-20 | 1982-10-20 | Etching method of shadow mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18274682A JPS5973834A (en) | 1982-10-20 | 1982-10-20 | Etching method of shadow mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5973834A JPS5973834A (en) | 1984-04-26 |
| JPH0430134B2 true JPH0430134B2 (en) | 1992-05-20 |
Family
ID=16123707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18274682A Granted JPS5973834A (en) | 1982-10-20 | 1982-10-20 | Etching method of shadow mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5973834A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101219622B1 (en) * | 2010-08-04 | 2013-01-08 | 김석중 | Homogeneous charge compression ignition type two strokes engine |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5336587A (en) * | 1988-05-24 | 1994-08-09 | Kabushiki Kaisha Toshiba | Method of manufacturing main plates for exposure printing |
| JPH02103841A (en) * | 1988-10-11 | 1990-04-16 | Toshiba Corp | Manufacture of shadow mask |
| JP3009076B2 (en) * | 1990-09-20 | 2000-02-14 | 大日本スクリーン製造 株式会社 | Method for forming fine holes in metal sheet |
| EP0476664B1 (en) * | 1990-09-20 | 1995-07-05 | Dainippon Screen Mfg. Co., Ltd. | Method of forming small through-holes in thin metal plate |
-
1982
- 1982-10-20 JP JP18274682A patent/JPS5973834A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101219622B1 (en) * | 2010-08-04 | 2013-01-08 | 김석중 | Homogeneous charge compression ignition type two strokes engine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5973834A (en) | 1984-04-26 |
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