JPS5972752A - High frequency transistor - Google Patents

Abstract

PURPOSE:To increase the current capacity and to improve the high frequency characteristics and reliability of a transistor, by providing two sets of bias supplying terminals on both sides of a package. CONSTITUTION:Bias terminals 8a and 8b for input electrodes are provided on both sides of a package 1, and bias terminals 9a and 9b for output electrodes are also provided on both sides of the package 1. In this type of a high frequency transistor having a bias circuit and bias terminals, the current capacity, which is obtained by flowing a current through the circuit is doubled by using the bias terminals in parallel. When the transistor is mounted in a device and the current capacity for only one bias terminal part is enough, a power supply line can be connected to the one bias terminal, even though the power supply line is located on eighter side of the two bias terminals. Therefore, input electrode leads or the output electrode leads are not required to be crossed over, adverse effects on the high frequency circuit can be avoided, and the possibility of deteriorating reliability can be eliminated.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high frequency transistor incorporating a bias circuit and having a plurality of bias terminals.

FIG. 1 is a plan view showing a conventional bias circuit and a high frequency transistor with a bias terminal.

In the figure, (1) is a package made of ceramic or the like with a built-in bias circuit, and C2) is connected to the input electrode of the transistor within this socket cage (1) and extended to the negative side of this package (1). The input electrode lead (3) consisting of a conductive plate is connected to the output electrode of the transistor within this package (1), and the input electrode lead (2) is connected to the output electrode of the transistor in this package (1).
an output electrode lead consisting of a conductor plate extending in the opposite direction;
(4) and (5) are connected to the common electrode of the transistor in this package (1), and consist of conductive plates extending from the center of the input electrode lead (2) and output electrode lead (3) to both sides, respectively. The common electrode lead (6) is an input electrode bias terminal, CI, which is connected to the input electrode of the transistor via the bias circuit in this package (1).
) is an output electrode bias terminal connected to the output electrode of the transistor via a bias circuit in the package (1).

However, since the conventional high-frequency transistor (4) has only one bias terminal, the current that can flow through the circuit is limited. (B) When incorporating into a device, if the power supply line is in the opposite direction to the direction in which the bias terminal comes out, it must be connected across the input electrode lead and output electrode lead, which will have a negative impact on the high frequency circuit. However, there were disadvantages such as the possibility of deterioration of reliability.

Therefore, an object of the invention is to provide a bias circuit and a high frequency transistor with a bias terminal, which can increase the current capacity that can flow through the circuit and improve workability, high frequency characteristics, and reliability.

In order to achieve such an object, the present invention disposes both or one of the input electrode bias terminal and the output electrode bias terminal on both sides of the package, and will be described in detail below using examples. .

FIG. 2 is a plan view showing an embodiment of a high frequency transistor according to the present invention. In the figure, (8a) and (
8b) are input electrode bias terminals provided on both sides of the package (1), and (9m) and (9b) are output electrode bias terminals provided on both sides of the package (1).

In the bias circuit and the high-frequency transistor with bias terminals having this configuration, the input electrode bias terminal and the output electrode bias terminal are respectively provided on both sides of the package (1). , the current capacity obtained by flowing it through the circuit doubles. () If the current capacity for one bias terminal is sufficient, you can connect the power supply line to the terminal in that direction, regardless of which direction the two bias terminals are protruding from. There is no need to straddle the input electrode lead or the output electrode lead, and the possibility of adversely affecting the high frequency circuit or deteriorating reliability can be eliminated.

Although the above embodiments have been described with respect to a bias circuit and a high-frequency transistor with a bias terminal, the present invention is not limited to this, and it goes without saying that the same can be applied to an internally matched high-frequency transistor that includes a matching circuit inside the package. be.

As explained in detail above, according to the high frequency transistor according to the present invention, two bias supply terminals are provided on both sides of the package, so the current capacity can be increased, and the high frequency characteristics and reliability are improved. There are effects such as being able to

[Brief explanation of drawings]

Figure 1 is a plan view showing a conventional high frequency transistor;
The figure is a plan view showing one embodiment of a high frequency transistor according to the present invention. (1)...Fist package, C2)...Input electrode lead, (3)...Output electrode lead, (4) and (
5)...Common electrode lead, (6)...Bias terminal for input electrode, σ)...Bias terminal for fist output electrode, (8a) and (8b)...Bias for input electrode Terminals (9a) and (9b): bias terminals for output electrodes. In addition, in the figures, the same reference numerals indicate the same or corresponding parts. Agent Makoto Kuzuno - Figure 1 Figure 2 Procedural amendment (voluntary) 58223 Month, Showa 1. Title of the invention: High-frequency transistor 3. To the representative Hitoshi Katayama of the person making the amendment: 5. In Column 6 of the Detailed Description of the Invention, "conductive plate" in the second line of page 2 of the specification of the contents of the amendment is amended to read "conductive plate". that's all

Claims (1)

[Claims] In a high-frequency transistor including an input electrode bias circuit and an output electrode bias circuit inside a package, and an input electrode bias terminal and an output electrode bias terminal provided on the outer surface of the cage, the input electrode bias terminal and the A high-frequency transistor characterized in that both or one of output electrode bias terminals are arranged on both sides of the package.