JPS5965489A - Solar battery device and manufacture thereof - Google Patents
Solar battery device and manufacture thereofInfo
- Publication number
- JPS5965489A JPS5965489A JP57174513A JP17451382A JPS5965489A JP S5965489 A JPS5965489 A JP S5965489A JP 57174513 A JP57174513 A JP 57174513A JP 17451382 A JP17451382 A JP 17451382A JP S5965489 A JPS5965489 A JP S5965489A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- mask
- silicon layer
- substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000001704 evaporation Methods 0.000 claims abstract description 8
- 230000008020 evaporation Effects 0.000 claims abstract description 4
- 229920003002 synthetic resin Polymers 0.000 abstract description 6
- 239000000057 synthetic resin Substances 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 4
- 239000004642 Polyimide Substances 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 229920001721 polyimide Polymers 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 241000282806 Rhinoceros Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ZHPNWZCWUUJAJC-UHFFFAOYSA-N fluorosilicon Chemical compound [Si]F ZHPNWZCWUUJAJC-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、太陽電池装置およびその製造方法。[Detailed description of the invention] [Field of application of the invention] The present invention relates to a solar cell device and a method for manufacturing the same.
に関する。Regarding.
合成樹脂製基板上にアモルファスシリコン太陽電池を作
製することは、特開昭５４−１４９４８９号、特開昭５
５−４９９４号、特開昭５６−１６９３７２号等で。The production of an amorphous silicon solar cell on a synthetic resin substrate is disclosed in Japanese Patent Application Laid-open No. 54-149489 and Japanese Patent Application Laid-open No. 5
No. 5-4994, JP-A-56-169372, etc.
公知である。第１図に、従来のアモルファス太（）陽電
池素子を複数個直列に接続した例を示す。・１は合成樹
脂性基板、２は第１電極６はアモルファスシリコン層、
４は第２電極である。第１・図に示す形状は、斜線部６
が急峻であるため第２電極４が段切れしやすく信頼性に
欠けるもの１であった。また、上記形状は、通常マスク
蒸着。It is publicly known. FIG. 1 shows an example in which a plurality of conventional amorphous solar cell elements are connected in series.・1 is a synthetic resin substrate, 2 is a first electrode 6 is an amorphous silicon layer,
4 is a second electrode. The shape shown in the first figure is the shaded part 6.
Because of the steepness of the second electrode 4, the second electrode 4 was easily broken, resulting in a lack of reliability. In addition, the above shape is usually mask evaporated.
等で形成されるが、アモルファスシリコン層３０、およ
び第２電極４を形成する時にマスク合せを。However, when forming the amorphous silicon layer 30 and the second electrode 4, mask alignment is required.
２回行なう必要があシ、工程が複雑となってい。It needs to be done twice, making the process complicated.
た。Ta.
鳴門の目的〕
本発明の目的は上記欠点をなくシ、太陽電池装置の信頼
性を向上させるとともに、製造工程を簡略化させた太陽
電池装置、及びその製造方法を提供することにある。Purpose of Naruto] An object of the present invention is to provide a solar cell device that eliminates the above-mentioned drawbacks, improves the reliability of the solar cell device, and simplifies the manufacturing process, and a method for manufacturing the same.
本発明の要点は、アモルファスシリコン層を形成する時
のマスク形状を工夫し、該層の片側をゆるやかな面とす
ることによシ第２電極の段切れを防止し、また該層の反
対側の面を急峻としておき、第２電極形成時に基板を蒸
発源に対して傾けることにより、マスクを不要とし、製
造工程を簡略化させたことを特徴としている。The key point of the present invention is to prevent the second electrode from breaking by devising the shape of the mask when forming the amorphous silicon layer and making one side of the layer a gentle surface. By making the surface steep and tilting the substrate with respect to the evaporation source when forming the second electrode, a mask is not required and the manufacturing process is simplified.
以下、本発明の実施例を第２図、第６図、第４図を用い
て詳細に説明する。第２図は、可とう性を有するポリイ
ミド等よシなる合成樹脂性基板１０上に第１電極１１１
例えばアルミニウムを約５００＾以上の厚さにマスク蒸
着して形成したものに、アモルファスシリコン膜をマス
ク２１を用いて形成しようとする図である。マスク２１
ば、基板に対して垂直な面２１ｂと傾いている面２１ｂ
を有している。また、１２′は前回形成されたアモルフ
ァスシリコン膜で、２１Ｃはマスク２１ニヨシ１２′膜
を破壊しないように設けられたものである。Embodiments of the present invention will be described in detail below with reference to FIGS. 2, 6, and 4. FIG. 2 shows a first electrode 111 on a flexible synthetic resin substrate 10 such as polyimide.
This is a diagram in which an amorphous silicon film is formed using a mask 21 on, for example, aluminum formed by mask vapor deposition to a thickness of about 500^ or more. mask 21
For example, a surface 21b perpendicular to the substrate and a surface 21b inclined
have. Further, 12' is the previously formed amorphous silicon film, and 21C is provided so as not to destroy the mask 21 and 12' film.
アモルファスシリコン層は、スパッタ蒸着法あるいはプ
ラズマグロー放電法によ多形成するだめ蒸着粒子の回シ
込みがすぐれており、２１ａのような傾いた面角度θｌ
は２０°〜６０°を有するマスク２１を用いることによ
シ、第３図のようなゆるやかな面１２ａを有する、アモ
ルファスシリコン層１２を得ることができる。このゆる
やかな面の角度θ、は２０度〜６０度が適するまた、基
板に対して垂直なマスク面２１ｂによシ、急峻な面１２
ｂを同時に形成することができる。急峻な面の角度へは
８０°〜１００ 度が適するここで、上記アモルファ
スシリコン層ハ、シランやフロルシリコンなどのシリコ
ン化合物をＤ型、Ｎ型缶不純物ガスを含む雰囲気中で順
次堆積形成される。なお、上記Ｐ型層は膜厚５０〜・１
００＾、ドープ量０．０２〜１％、ノンドープ層は膜厚
１〜２１μｍ、 Ｎ型層は膜厚１００〜１０００又、ド
ープ量０．１〜３％である０
次に、第４図に第２電極１３を形成する方法を示す。基
板を蒸着源（図示せず）に対して＾だけ傾けて配置して
蒸着すると、蒸発粒子の飛来方向は第４図中の矢印の方
向となり、図中破線で示スようにアモルファスシリコン
層１２の影トなるため第２電極が形成されない部分１５
が生しる。したがって本方法によればマスクを使用せず
して第２電極１３のパターニングができる０さらに、本
方法によれば従来、電極の断切れが生じていた部分が従
来より厚く形成されるので、信頼性が向上する利点があ
る。なお角度θ、の好適な例は５度〜６０度である。ま
た第２電極としては例えば透光性にすぐれているＩｎ−
８ｎ酸化物から成る層を使用するのが良い。The amorphous silicon layer has excellent circulation of deposited particles formed by sputter deposition or plasma glow discharge, and has an inclined surface angle θl as shown in 21a.
By using a mask 21 having an angle of 20° to 60°, an amorphous silicon layer 12 having a gentle surface 12a as shown in FIG. 3 can be obtained. The angle θ of this gentle surface is preferably 20 degrees to 60 degrees.
b can be formed simultaneously. For steep surface angles, 80° to 100° is suitable.Here, the amorphous silicon layer C is formed by sequentially depositing silicon compounds such as silane and fluorosilicon in an atmosphere containing D-type and N-type impurity gases. . Note that the P-type layer has a thickness of 50 to 1
00^, the doping amount is 0.02-1%, the thickness of the non-doped layer is 1-21 μm, the thickness of the N-type layer is 100-1000, and the doping amount is 0.1-3%. A method for forming the second electrode 13 will be shown. When the substrate is evaporated with the substrate tilted by ^ with respect to the evaporation source (not shown), the flying direction of the evaporated particles is the direction of the arrow in FIG. Part 15 where the second electrode is not formed due to the shadow of
is born. Therefore, according to the present method, the second electrode 13 can be patterned without using a mask.Furthermore, according to the present method, the portion where the electrode had been cut off can be formed thicker than before, making it reliable. It has the advantage of improving performance. Note that a preferable example of the angle θ is 5 degrees to 60 degrees. In addition, as the second electrode, for example, In-
Preferably, a layer of 8n oxide is used.
本発明の実施例は、合成樹脂製基板上のアモルファス太
陽電池について説明したが、ガラδ基板上の太陽電池に
ついても適用できることはいうまでもない。Although the embodiments of the present invention have been described with respect to amorphous solar cells on synthetic resin substrates, it goes without saying that the present invention can also be applied to solar cells on glass δ substrates.
本発明によれば、第２電極の断切れを防止できるため、
信頼性の高い太陽電池装置が得られるＯ
また、本発明の製造方法によれば、第２電極を形成する
時にマスクが不をとなるだめ、製造工程が著しく簡略化
されるとともに、ｔｉ性が向上する。According to the present invention, since disconnection of the second electrode can be prevented,
A highly reliable solar cell device can be obtained.Furthermore, according to the manufacturing method of the present invention, the mask is not damaged when forming the second electrode, the manufacturing process is significantly simplified, and the ti property is improved. improves.
第１図は、従来の太陽電池装置の断面図、第２図、第３
図、第４図は、本発明による太陽電池の製造方法を説明
する断面図である。
１．１０・・・・・・合成樹脂性基板、２．１１・・・
・・・第１電極、
１２・・・・・・アモルファスシリコン層、１３・・・
・・・第２電極、
第 ２ 図
１／
犀３図Figure 1 is a sectional view of a conventional solar cell device, Figures 2 and 3 are
4 are cross-sectional views illustrating the method of manufacturing a solar cell according to the present invention. 1.10...Synthetic resin substrate, 2.11...
...first electrode, 12...amorphous silicon layer, 13...
...Second electrode, 2nd Figure 1/Rhinoceros 3 Figure
Claims (1)
、型太陽電池素子を備えた太陽電池装置において、アモ
ルファスシリコン層の上記素子が直列接続されている側
の片側面を基板に対して７０度〜９０度にし、反対側面
を基板に対して２０度〜６０度傾けた構造としたことを
特徴とする太陽電池装置。 ２、 基板上に第１の電極、アモルファスシリコン層、
第２の電極を順次形成する太陽電池の製造方法において
、上記太陽電池が直列接続される側の片側の角度が８０
度〜１００度、反対側の角度２０度〜６０度となる形状
のマスクを用いてアモルファスシリコン層を形成するこ
とを特徴とする太陽電池装置の製造方法。 ３ 蒸発源に対して上記基板を傾けて配置し、第２電極
を形成することを特徴とする特許請求の範囲第２項記載
の太陽電池装置の製造方法。[Claims] 1. In a solar cell device comprising two or more amorphous silicon type solar cell elements on a substrate, one side of the amorphous silicon layer on which the above elements are connected in series is attached to the substrate. A solar cell device characterized by having a structure in which the opposite side is tilted at 70 degrees to 90 degrees with respect to the substrate, and the opposite side is tilted at 20 degrees to 60 degrees with respect to the substrate. 2. A first electrode, an amorphous silicon layer on the substrate,
In the method for manufacturing a solar cell in which second electrodes are sequentially formed, the angle of one side of the side where the solar cells are connected in series is 80°.
1. A method for manufacturing a solar cell device, comprising forming an amorphous silicon layer using a mask having a shape of 20 degrees to 60 degrees on the opposite side and 20 degrees to 60 degrees on the opposite side. 3. The method of manufacturing a solar cell device according to claim 2, characterized in that the second electrode is formed by arranging the substrate at an angle with respect to the evaporation source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57174513A JPS5965489A (en) | 1982-10-06 | 1982-10-06 | Solar battery device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57174513A JPS5965489A (en) | 1982-10-06 | 1982-10-06 | Solar battery device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5965489A true JPS5965489A (en) | 1984-04-13 |
Family
ID=15979818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57174513A Pending JPS5965489A (en) | 1982-10-06 | 1982-10-06 | Solar battery device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5965489A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6130083A (en) * | 1984-07-20 | 1986-02-12 | Sanyo Electric Co Ltd | Photovoltaic device |
| US4663494A (en) * | 1984-07-19 | 1987-05-05 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| JPS62142859U (en) * | 1986-03-03 | 1987-09-09 | ||
| JP2008533737A (en) * | 2005-03-16 | 2008-08-21 | コリア アドバンスト インスティテュート オブ サイエンス アンド テクノロジー | INTEGRATED THIN FILM SOLAR CELL, METHOD FOR MANUFACTURING THE SAME, METHOD FOR PROCESSING TRANSPARENT ELECTRODE FOR INTEGRATED THIN FILM SOLAR CELL, ITS STRUCTURE AND TRANSPARENT SUBSTRATE PROVIDED WITH SAME |
-
1982
- 1982-10-06 JP JP57174513A patent/JPS5965489A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4663494A (en) * | 1984-07-19 | 1987-05-05 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| JPS6130083A (en) * | 1984-07-20 | 1986-02-12 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS62142859U (en) * | 1986-03-03 | 1987-09-09 | ||
| JP2008533737A (en) * | 2005-03-16 | 2008-08-21 | コリア アドバンスト インスティテュート オブ サイエンス アンド テクノロジー | INTEGRATED THIN FILM SOLAR CELL, METHOD FOR MANUFACTURING THE SAME, METHOD FOR PROCESSING TRANSPARENT ELECTRODE FOR INTEGRATED THIN FILM SOLAR CELL, ITS STRUCTURE AND TRANSPARENT SUBSTRATE PROVIDED WITH SAME |
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