JPH027576A - Manufacture of thin-film type photoelectric converting element - Google Patents
Manufacture of thin-film type photoelectric converting elementInfo
- Publication number
- JPH027576A JPH027576A JP63158463A JP15846388A JPH027576A JP H027576 A JPH027576 A JP H027576A JP 63158463 A JP63158463 A JP 63158463A JP 15846388 A JP15846388 A JP 15846388A JP H027576 A JPH027576 A JP H027576A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- transparent
- transparent protective
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 230000001681 protective effect Effects 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 20
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000000206 photolithography Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、薄膜ペリ光電変換素子の製造方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a thin film periphotoelectric conversion element.
〔従来の技術］
最近、アモルファスシリコンを太陽布地以外にも薄膜型
光センサやフォトカプラに用いられる受光素子に応用す
ることが試みられている。特に超小型受光素子として応
用する場合、微細加工と光電変換素子の高効率化がキー
ポイントとなる。[Prior Art] Recently, attempts have been made to apply amorphous silicon to light-receiving elements used in thin-film optical sensors and photocouplers, in addition to solar fabrics. Particularly when applied as an ultra-small photodetector, the key points are microfabrication and high efficiency of the photoelectric conversion element.
微細加工はフォトリソグラフィ技術とウェットエツチン
グあるいはドライエツチング技術を用いて実現できる。Microfabrication can be achieved using photolithography technology and wet etching or dry etching technology.
高効率化技術として、光入射側に凹凸構造を設けて光路
長を長くすることにより、変換効率を高めるいわゆるテ
クスチュア技術が開発されている。As a technology for increasing efficiency, a so-called texture technology has been developed that increases conversion efficiency by providing a concavo-convex structure on the light incidence side to lengthen the optical path length.
従来のテクスチュア技術は、シリコン基板、金属基板等
の不透明な絶縁基板を用いるときは、基板そのものに凹
凸構造を設けることが行われている。具体的にはシリコ
ン基板の場合、（１００）面表面にアルカリ性溶液を用
いて選択エツチングを行ない凹凸構造を設ける方法や、
Ａｆｆｉ基板を電解エツチングにより粗らす方法が開発
されている。そして、このような凹凸基板の上に金属電
極、光電変換層、透明電極、透明保護膜を形成すると、
光入射側の最上面が凹凸構造になる。In conventional texture technology, when an opaque insulating substrate such as a silicon substrate or a metal substrate is used, an uneven structure is provided on the substrate itself. Specifically, in the case of a silicon substrate, there is a method of selectively etching the (100) plane surface using an alkaline solution to form an uneven structure;
A method has been developed to roughen Affi substrates by electrolytic etching. Then, when a metal electrode, a photoelectric conversion layer, a transparent electrode, and a transparent protective film are formed on such an uneven substrate,
The top surface on the light incident side has an uneven structure.
［発明が解決しようとする課題］
しかしながら、上述の如き方法により凹凸構造を設けた
場合、凹凸の大きさによっては、金属電極の膜厚にばら
つきが生じて、抵抗が増加したりピンホールの発生が増
加したりするといった問題点がある。また、凹凸を付け
るために、それだけで一つのプロセスを要し、全体とし
て非常に複雑な工程となる。[Problems to be Solved by the Invention] However, when a concavo-convex structure is provided by the method described above, depending on the size of the concavities and convexities, variations may occur in the film thickness of the metal electrode, resulting in increased resistance and generation of pinholes. There are problems such as an increase in Furthermore, one process is required to create the unevenness, making the process as a whole extremely complicated.
本発明は、上記問題点を解決するためになされたもので
、その目的とするところは、工程数を増やすことなく、
最上層の透明保護膜にのみ凹凸構造を形成することがで
きる薄膜型光電変換素子の製造方法を提供するにある。The present invention was made to solve the above problems, and its purpose is to
It is an object of the present invention to provide a method for manufacturing a thin film type photoelectric conversion element in which a concavo-convex structure can be formed only on the uppermost transparent protective film.
［発明の開示］
本発明は、不透明絶縁基板上に金属電極、光電変換層、
透明電極、透明保護膜、及び配線用Ａｆｉ電極をフォト
リソグラフィ及びエツチングによって順次形成する薄膜
型光電変換素子の製造方法に関するものであり、透明保
護膜の形成までは従来と同様の方法で行なう、具体的に
は、第１図に示すように、Ａｌ、Ｃｒ等の金属電極１の
形成、ｐｉｎ構造構造７フルフアスＳｉ重変換層２の形
成、ＩＴＯ（インジウム・スズ酸化物）よりなる透明電
極３の形成、信頼性向上のためのＳ ｉ ０２あるいは
Ｓｉ３Ｎ＊等からなる透明保護膜４の形成を順次行ない
、その後、透明保護膜４にコシタクトホールを開け、こ
の上に下記のプロセスでＡｎ重電極を形成する。[Disclosure of the Invention] The present invention provides metal electrodes, a photoelectric conversion layer,
The present invention relates to a method for manufacturing a thin film photoelectric conversion element in which a transparent electrode, a transparent protective film, and an Afi electrode for wiring are sequentially formed by photolithography and etching. Specifically, as shown in FIG. 1, the formation of a metal electrode 1 made of Al, Cr, etc., the formation of a full Si double conversion layer 2 having a pin structure 7, and the formation of a transparent electrode 3 made of ITO (indium tin oxide). A transparent protective film 4 made of SiO2 or Si3N* is sequentially formed to improve formation and reliability. After that, a cosmic tact hole is made in the transparent protective film 4, and an An heavy electrode is formed on the transparent protective film 4 by the following process. form.
次に、上記透明保護膜４上にＡ／膜を形成するのである
が、その形成は抵抗加熱蒸着またはＥＢ蒸着を用いて行
なう。これらの方法で蒸着すると、２〜ｌＯμｍの結晶
粒が形成されるのが確認された。このようにして形成し
たＡｌ膜５°上にフォトリソグラフィによってレジスト
６のパターニングを行ない、Ａ１膜５°をエツチングす
る。なお、本発明ではＡｌ膜のエツチングにイオンビー
ムエツチング装置を用いた。このようにしてＡ ｊ！
ＩＩＷ５゛をエツチングすると、／ｌ膜５′が除去され
た後の下地の透明保護膜４に凹凸構造が生じる（第２図
参照）。Next, the A/film is formed on the transparent protective film 4, which is formed using resistance heating vapor deposition or EB vapor deposition. When deposited using these methods, it was confirmed that crystal grains of 2 to 10 μm were formed. A resist 6 is patterned by photolithography on the Al film 5° thus formed, and the A1 film 5° is etched. In the present invention, an ion beam etching device was used for etching the Al film. In this way A j!
When IIW 5' is etched, an uneven structure is created in the underlying transparent protective film 4 after the /l film 5' is removed (see FIG. 2).
イオンビームエツチングとは、アルゴンなどの不活性ガ
スをイオン化し、電圧３００■〜５ＫＶ程度で加速し、
材料表面を衝撃して材料表面分子をはじき飛ばすスパッ
タリング現象を利用したエツチング方法である。このイ
オンビームエツチングを用いてＡ１膜をエツチングして
いく過程を第２図（ａ）〜（Ｃ）に示す。Ion beam etching involves ionizing an inert gas such as argon and accelerating it at a voltage of about 300 to 5 KV.
This is an etching method that utilizes the sputtering phenomenon in which molecules on the material surface are repelled by impacting the surface of the material. The process of etching the A1 film using this ion beam etching is shown in FIGS. 2(a) to 2(C).
まず、イオンビームＢを試料に対して垂直に入射させる
。Ａｌ膜５′は結晶粒が成長しているため、粒界の部分
は薄くなっており、薄い部分から先にＡ７膜が除去され
、ビームＢが透明保護膜４上に到達する。そしてＡＩｌ
膜５″が全面エツチングされたときには、１〜３μｍの
凹凸が透明保護膜４に形成される。その拡大図を第３図
に示す。First, the ion beam B is made perpendicularly incident on the sample. Since crystal grains have grown in the Al film 5', the grain boundary portion is thin, and the A7 film is removed from the thinner portion first, and the beam B reaches the transparent protective film 4. and AIl
When the entire surface of the film 5'' is etched, irregularities of 1 to 3 μm are formed on the transparent protective film 4. An enlarged view of the same is shown in FIG.
以上のようにして、透明保護膜４に凹凸構造を形成する
と、入射光が斜めに光重変換）−２に入っていくので光
路長が延びる。つまり、光電変換効率が向上する。When the uneven structure is formed on the transparent protective film 4 as described above, the incident light obliquely enters the light weight conversion)-2, thereby increasing the optical path length. In other words, photoelectric conversion efficiency is improved.
（実施例）
絶縁基板として表面に５ｉ０２膜が形成されたシリコン
基板を用いる。集積型光電変換素子のパターン形状は、
第４図に示すように０．６１０のセルを１０個直列に接
続したものである。(Example) A silicon substrate with a 5i02 film formed on its surface is used as an insulating substrate. The pattern shape of the integrated photoelectric conversion element is
As shown in FIG. 4, ten 0.610 cells are connected in series.
まずスパッタリング装置によって、前記絶縁基板上にＣ
ｒ腰を２０００人形成する。そして、フォトリソグラフ
ィ・エツチング工程により所定の形状に加工して金属電
極１とする。次にプラズマＣＶＤ装置によりアモルファ
スＳｉ膜をｐ、ｔ、ｎのｉ府にそれぞれ３００人、 ６
０００人、１００人積屓して光電変換１ｆｉ ２を形成
する。このときドーピング量は、ｐ層（８２Ｈ６／Ｓ
ｉ Ｈ４） １％、 ｎＪｉｉ （ＰＨ３／ＳｉＨ
＊）１％である。そして、Ｃｒ電極１と同様にパターニ
ングを行なう。次に、ＥＢ蒸着装置により、ＩＴＯを９
００人形成してパターニングを行ない透明電極３を構成
する。そして、プラズマＣＶＤ装置により、透明保護膜
４としての５ｔ０２膜を５０００人形成してこれにコン
タクトホールを開ける。ここまでのエツチング工程は、
すべて酸系のエッチャントを用いてエツチング可能であ
る。First, a sputtering device is used to coat C on the insulating substrate.
Form 2,000 people. Then, the metal electrode 1 is processed into a predetermined shape using a photolithography and etching process. Next, 300 people each formed an amorphous Si film on the p, t, and n sections using a plasma CVD device.6
A photoelectric conversion system 1fi2 is formed by stacking 100 or 100 people. At this time, the doping amount is the p layer (82H6/S
i H4) 1%, nJii (PH3/SiH
*) 1%. Then, patterning is performed in the same manner as the Cr electrode 1. Next, using an EB evaporator, 90% of ITO was deposited.
A transparent electrode 3 is formed by forming and patterning the transparent electrode 3. Then, using a plasma CVD apparatus, 5,000 5t02 films are formed as the transparent protective film 4, and contact holes are formed therein. The etching process up to this point is
All can be etched using acid-based etchants.
次に、抵抗加熱方式真空蒸着装置によりＡＩ！膜５°を
５０００人形成する。Ａｌ膜５°のエツチングはりん酸
等によるウェフトエツチングによっても可能であるが、
その場合、前記５ｉＯ２１１ｆ４は全く影響を受けず、
高効率化は望めない。Next, AI! 5000 people will form a film 5°. Etching of the Al film at 5° is also possible by wet etching using phosphoric acid, etc.
In that case, the 5iO211f4 is not affected at all,
High efficiency cannot be expected.
本実施例では、コモンウェルス社製イオンビームエツチ
ング装置を用いてＡ ７！股５ ’ のエツチングを行
なった。エツチング条件は、加速器５００Ｖ、１００ｍ
Ａで３０分エツチングを行なった。In this example, an ion beam etching device manufactured by Commonwealth Corporation was used to perform A7! I had my crotch 5' etched. Etching conditions were accelerator 500V, 100m.
Etching was performed at A for 30 minutes.
その結果、下地の５ｉ０２膜４上には全面にわたって、
１〜３μｍのクレータ−状の穴が生成された。比較例と
して、ウェットエツチングにより完全に平坦な５ｉＯ２
１Ｑを持つ素子を作製して両者の特性を比較した。光源
は１００１００Ｏの赤色ＬＥＤ２個を対向させた。実施
例及び比較例の特性を下表に示す。As a result, over the entire surface of the underlying 5i02 film 4,
Crater-like holes of 1-3 μm were produced. As a comparative example, 5iO2 was completely flattened by wet etching.
A device with 1Q was fabricated and the characteristics of both were compared. The light source consisted of two red LEDs of 100100 O facing each other. The characteristics of Examples and Comparative Examples are shown in the table below.
［発明の効果］
本発明は上記のように、不透明絶縁基板上に金属電極、
光電変換層、透明電極、透明保護膜及び配線用Ａｌ電極
をフォトリソグラフィによって形成する薄膜型光電変換
素子の製造において、前記透明保護膜上にＡｌ膜を形成
し、しかる後、前記ＡＡ電極を形成するレジストを介し
て前記Ａｌ膜をイオンビームエツチングすることにより
、前記透明保護膜に凹凸構造を形成したことを特徴とす
るので、工程数を増やすことなく、最上層の透明保護膜
上リコン凸構造を形成することができる。[Effects of the Invention] As described above, the present invention provides metal electrodes on an opaque insulating substrate,
In manufacturing a thin film photoelectric conversion element in which a photoelectric conversion layer, a transparent electrode, a transparent protective film, and an Al electrode for wiring are formed by photolithography, an Al film is formed on the transparent protective film, and then the AA electrode is formed. The present invention is characterized in that the uneven structure is formed on the transparent protective film by ion beam etching the Al film through a resist, so that it is possible to form a reconvex structure on the top transparent protective film without increasing the number of steps. can be formed.
従って、従来のテクスチュア技術による光電変換素子よ
り製造コストの低減が図れると共に、高効率の薄膜型光
電変換素子を提供できる。Therefore, manufacturing costs can be reduced compared to photoelectric conversion elements using conventional texture techniques, and a highly efficient thin film type photoelectric conversion element can be provided.
第１図は薄膜型光電変換素子の断面図、第２図は本発明
に係るイオンビームエツチングのプロセスを示す図、第
３図は本発明に係る透明保護膜の拡大断面図、第４図は
本発明により製造された集積型光電変換素子の概略平面
図である。
１・・・金属電極、２・・・光電変換層、３・・・透明
電極４・・・透明保護膜、５・・・Ａｌ電極。FIG. 1 is a cross-sectional view of a thin film type photoelectric conversion element, FIG. 2 is a diagram showing the ion beam etching process according to the present invention, FIG. 3 is an enlarged cross-sectional view of a transparent protective film according to the present invention, and FIG. 1 is a schematic plan view of an integrated photoelectric conversion element manufactured according to the present invention. DESCRIPTION OF SYMBOLS 1... Metal electrode, 2... Photoelectric conversion layer, 3... Transparent electrode 4... Transparent protective film, 5... Al electrode.
Claims (1)
電極、透明保護膜及び配線用Ａｌ電極をフォトリソグラ
フィによって形成する薄膜型光電変換素子の製造におい
て、前記透明保護膜上にＡｌ膜を形成し、しかる後、前
記Ａｌ電極を形成するレジストを介して前記Ａｌ膜をイ
オンビームエッチングすることにより、前記透明保護膜
に凹凸構造を形成したことを特徴とする薄膜型光電変換
素子の製造方法。(1) In manufacturing a thin film photoelectric conversion element in which a metal electrode, a photoelectric conversion layer, a transparent electrode, a transparent protective film, and an Al electrode for wiring are formed on an opaque insulating substrate by photolithography, an Al film is formed on the transparent protective film. and then ion beam etching the Al film through the resist forming the Al electrode, thereby forming an uneven structure on the transparent protective film. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63158463A JPH027576A (en) | 1988-06-27 | 1988-06-27 | Manufacture of thin-film type photoelectric converting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63158463A JPH027576A (en) | 1988-06-27 | 1988-06-27 | Manufacture of thin-film type photoelectric converting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH027576A true JPH027576A (en) | 1990-01-11 |
Family
ID=15672292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63158463A Pending JPH027576A (en) | 1988-06-27 | 1988-06-27 | Manufacture of thin-film type photoelectric converting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH027576A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006229098A (en) * | 2005-02-21 | 2006-08-31 | New Japan Radio Co Ltd | Optical semiconductor device and manufacturing method therefor |
| JP2013065911A (en) * | 2009-02-24 | 2013-04-11 | Hamamatsu Photonics Kk | Photodiode array |
| JP2013065912A (en) * | 2009-02-24 | 2013-04-11 | Hamamatsu Photonics Kk | Photodiode manufacturing method and photodiode |
| US8916945B2 (en) | 2009-02-24 | 2014-12-23 | Hamamatsu Photonics K.K. | Semiconductor light-detecting element |
| US8994135B2 (en) | 2009-02-24 | 2015-03-31 | Hamamatsu Photonics K.K. | Photodiode and photodiode array |
| US9190551B2 (en) | 2009-02-24 | 2015-11-17 | Hamamatsu Photonics K.K. | Photodiode and photodiode array |
-
1988
- 1988-06-27 JP JP63158463A patent/JPH027576A/en active Pending
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| JP2006229098A (en) * | 2005-02-21 | 2006-08-31 | New Japan Radio Co Ltd | Optical semiconductor device and manufacturing method therefor |
| JP2013065911A (en) * | 2009-02-24 | 2013-04-11 | Hamamatsu Photonics Kk | Photodiode array |
| JP2013065912A (en) * | 2009-02-24 | 2013-04-11 | Hamamatsu Photonics Kk | Photodiode manufacturing method and photodiode |
| JP2013093609A (en) * | 2009-02-24 | 2013-05-16 | Hamamatsu Photonics Kk | Semiconductor photodetection element |
| US8916945B2 (en) | 2009-02-24 | 2014-12-23 | Hamamatsu Photonics K.K. | Semiconductor light-detecting element |
| US8994135B2 (en) | 2009-02-24 | 2015-03-31 | Hamamatsu Photonics K.K. | Photodiode and photodiode array |
| US9190551B2 (en) | 2009-02-24 | 2015-11-17 | Hamamatsu Photonics K.K. | Photodiode and photodiode array |
| US9419159B2 (en) | 2009-02-24 | 2016-08-16 | Hamamatsu Photonics K.K. | Semiconductor light-detecting element |
| US9614109B2 (en) | 2009-02-24 | 2017-04-04 | Hamamatsu Photonics K.K. | Photodiode and photodiode array |
| US9972729B2 (en) | 2009-02-24 | 2018-05-15 | Hamamatsu Photonics K.K. | Photodiode and photodiode array |
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