JPS5961124A - 薄膜形成方法 - Google Patents
薄膜形成方法Info
- Publication number
- JPS5961124A JPS5961124A JP57172022A JP17202282A JPS5961124A JP S5961124 A JPS5961124 A JP S5961124A JP 57172022 A JP57172022 A JP 57172022A JP 17202282 A JP17202282 A JP 17202282A JP S5961124 A JPS5961124 A JP S5961124A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon dioxide
- film
- thin film
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
-
- H10P14/24—
-
- H10P14/3411—
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172022A JPS5961124A (ja) | 1982-09-30 | 1982-09-30 | 薄膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172022A JPS5961124A (ja) | 1982-09-30 | 1982-09-30 | 薄膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5961124A true JPS5961124A (ja) | 1984-04-07 |
| JPH0456447B2 JPH0456447B2 (esLanguage) | 1992-09-08 |
Family
ID=15934066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57172022A Granted JPS5961124A (ja) | 1982-09-30 | 1982-09-30 | 薄膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961124A (esLanguage) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6190421A (ja) * | 1984-10-11 | 1986-05-08 | Canon Inc | 堆積膜形成方法 |
| US5591492A (en) * | 1986-04-11 | 1997-01-07 | Canon Kabushiki Kaisha | Process for forming and etching a film to effect specific crystal growth from activated species |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50130370A (esLanguage) * | 1974-04-01 | 1975-10-15 | ||
| JPS50130369A (esLanguage) * | 1974-04-01 | 1975-10-15 |
-
1982
- 1982-09-30 JP JP57172022A patent/JPS5961124A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50130370A (esLanguage) * | 1974-04-01 | 1975-10-15 | ||
| JPS50130369A (esLanguage) * | 1974-04-01 | 1975-10-15 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6190421A (ja) * | 1984-10-11 | 1986-05-08 | Canon Inc | 堆積膜形成方法 |
| US5591492A (en) * | 1986-04-11 | 1997-01-07 | Canon Kabushiki Kaisha | Process for forming and etching a film to effect specific crystal growth from activated species |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0456447B2 (esLanguage) | 1992-09-08 |
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