JPS5961124A - 薄膜形成方法 - Google Patents

薄膜形成方法

Info

Publication number
JPS5961124A
JPS5961124A JP17202282A JP17202282A JPS5961124A JP S5961124 A JPS5961124 A JP S5961124A JP 17202282 A JP17202282 A JP 17202282A JP 17202282 A JP17202282 A JP 17202282A JP S5961124 A JPS5961124 A JP S5961124A
Authority
JP
Japan
Prior art keywords
substrate
silicon dioxide
film
thin film
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17202282A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0456447B2 (enExample
Inventor
Takashi Ito
隆司 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17202282A priority Critical patent/JPS5961124A/ja
Publication of JPS5961124A publication Critical patent/JPS5961124A/ja
Publication of JPH0456447B2 publication Critical patent/JPH0456447B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP17202282A 1982-09-30 1982-09-30 薄膜形成方法 Granted JPS5961124A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17202282A JPS5961124A (ja) 1982-09-30 1982-09-30 薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17202282A JPS5961124A (ja) 1982-09-30 1982-09-30 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS5961124A true JPS5961124A (ja) 1984-04-07
JPH0456447B2 JPH0456447B2 (enExample) 1992-09-08

Family

ID=15934066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17202282A Granted JPS5961124A (ja) 1982-09-30 1982-09-30 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS5961124A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190421A (ja) * 1984-10-11 1986-05-08 Canon Inc 堆積膜形成方法
US5591492A (en) * 1986-04-11 1997-01-07 Canon Kabushiki Kaisha Process for forming and etching a film to effect specific crystal growth from activated species

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50130369A (enExample) * 1974-04-01 1975-10-15
JPS50130370A (enExample) * 1974-04-01 1975-10-15

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50130369A (enExample) * 1974-04-01 1975-10-15
JPS50130370A (enExample) * 1974-04-01 1975-10-15

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190421A (ja) * 1984-10-11 1986-05-08 Canon Inc 堆積膜形成方法
US5591492A (en) * 1986-04-11 1997-01-07 Canon Kabushiki Kaisha Process for forming and etching a film to effect specific crystal growth from activated species

Also Published As

Publication number Publication date
JPH0456447B2 (enExample) 1992-09-08

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