JPS595972Y2 - プラズマエツチング装置 - Google Patents
プラズマエツチング装置Info
- Publication number
- JPS595972Y2 JPS595972Y2 JP1978137866U JP13786678U JPS595972Y2 JP S595972 Y2 JPS595972 Y2 JP S595972Y2 JP 1978137866 U JP1978137866 U JP 1978137866U JP 13786678 U JP13786678 U JP 13786678U JP S595972 Y2 JPS595972 Y2 JP S595972Y2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- electrode
- gas
- semiconductor substrate
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1978137866U JPS595972Y2 (ja) | 1978-10-09 | 1978-10-09 | プラズマエツチング装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1978137866U JPS595972Y2 (ja) | 1978-10-09 | 1978-10-09 | プラズマエツチング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54101978U JPS54101978U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-07-18 |
JPS595972Y2 true JPS595972Y2 (ja) | 1984-02-23 |
Family
ID=29110476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1978137866U Expired JPS595972Y2 (ja) | 1978-10-09 | 1978-10-09 | プラズマエツチング装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS595972Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3661747A (en) * | 1969-08-11 | 1972-05-09 | Bell Telephone Labor Inc | Method for etching thin film materials by direct cathodic back sputtering |
JPS48103433A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-04-17 | 1973-12-25 | ||
JPS4957775A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-10-02 | 1974-06-05 |
-
1978
- 1978-10-09 JP JP1978137866U patent/JPS595972Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS54101978U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101692423B (zh) | 等离子体蚀刻方法 | |
US8383521B2 (en) | Substrate processing method | |
US5415728A (en) | Method of performing plain etching treatment and apparatus therefor | |
JP2000173993A (ja) | プラズマ処理装置およびエッチング方法 | |
TW201145384A (en) | Semiconductor device manufacturing method and plasma etching apparatus | |
JPS627268B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JP2007005377A (ja) | プラズマエッチング方法、制御プログラム、コンピュータ記憶媒体及びプラズマエッチング装置 | |
CN100362632C (zh) | 干蚀刻方法 | |
JP3164195B2 (ja) | マイクロ波プラズマ処理装置 | |
JPH05275326A (ja) | レジストのアッシング方法 | |
JPS595972Y2 (ja) | プラズマエツチング装置 | |
JPWO2003017343A1 (ja) | ドライ現像方法 | |
JPH06104098A (ja) | マイクロ波プラズマ処理装置 | |
JP2967681B2 (ja) | マイクロ波プラズマ処理装置 | |
JPH05326451A (ja) | プラズマ処理装置被処理基板固定方法 | |
WO2022181691A1 (ja) | 基板処理方法及び基板処理装置 | |
JPH0241167B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
KR20050010208A (ko) | 유도결합 플라즈마 식각 장치 | |
JP2005064120A (ja) | プラズマ処理装置およびプラズマ処理方法 | |
JPS6221225A (ja) | レジストのアツシング方法 | |
JPH08241886A (ja) | プラズマ処理方法 | |
JP2906505B2 (ja) | マイクロ波プラズマ処理装置 | |
JPS61150336A (ja) | 半導体装置の製造方法 | |
KR20000001982A (ko) | 반도체 웨이퍼 식각장비의 듀얼바이어스정전척 | |
JPH0220021A (ja) | 半導体装置の制造方法 |