JPS5956783A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS5956783A JPS5956783A JP16693882A JP16693882A JPS5956783A JP S5956783 A JPS5956783 A JP S5956783A JP 16693882 A JP16693882 A JP 16693882A JP 16693882 A JP16693882 A JP 16693882A JP S5956783 A JPS5956783 A JP S5956783A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- active layer
- grown
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000003486 chemical etching Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 101150110330 CRAT gene Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010024229 Leprosy Diseases 0.000 description 1
- 241000408551 Meza Species 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16693882A JPS5956783A (ja) | 1982-09-25 | 1982-09-25 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16693882A JPS5956783A (ja) | 1982-09-25 | 1982-09-25 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5956783A true JPS5956783A (ja) | 1984-04-02 |
| JPS6347356B2 JPS6347356B2 (enrdf_load_stackoverflow) | 1988-09-21 |
Family
ID=15840427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16693882A Granted JPS5956783A (ja) | 1982-09-25 | 1982-09-25 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5956783A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6254987A (ja) * | 1985-09-04 | 1987-03-10 | Hitachi Ltd | 半導体レ−ザ装置 |
| JPH08307010A (ja) * | 1996-04-22 | 1996-11-22 | Hitachi Ltd | 半導体レーザ |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63214779A (ja) * | 1987-03-03 | 1988-09-07 | Mita Ind Co Ltd | 現像剤供給機構 |
-
1982
- 1982-09-25 JP JP16693882A patent/JPS5956783A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6254987A (ja) * | 1985-09-04 | 1987-03-10 | Hitachi Ltd | 半導体レ−ザ装置 |
| JPH08307010A (ja) * | 1996-04-22 | 1996-11-22 | Hitachi Ltd | 半導体レーザ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6347356B2 (enrdf_load_stackoverflow) | 1988-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4425650A (en) | Buried heterostructure laser diode | |
| US4525841A (en) | Double channel planar buried heterostructure laser | |
| US4366568A (en) | Semiconductor laser | |
| JPH06112594A (ja) | 面発光型半導体発光装置およびその製造方法 | |
| JPS6343387A (ja) | 半導体レ−ザ装置及びその製造方法 | |
| JPH09116222A (ja) | 半導体レーザの製造方法，及び半導体レーザ | |
| JPS5956783A (ja) | 半導体レ−ザ | |
| JPH0461292A (ja) | 半導体レーザ | |
| JPH02156588A (ja) | 半導体レーザおよびその製造方法 | |
| JP3108183B2 (ja) | 半導体レーザ素子とその製造方法 | |
| JPS6174382A (ja) | 半導体レ−ザ装置およびその製造方法 | |
| JPS6362292A (ja) | 半導体レ−ザ装置およびその製造方法 | |
| JPH01186688A (ja) | 半導体レーザ装置 | |
| JP2908480B2 (ja) | 半導体レーザ装置 | |
| JPH01162397A (ja) | 半導体レーザ素子 | |
| JP2814124B2 (ja) | 埋込み形半導体発光素子 | |
| JPS6190489A (ja) | 半導体レ−ザ装置およびその製造方法 | |
| JPH0559594B2 (enrdf_load_stackoverflow) | ||
| JPS6152999B2 (enrdf_load_stackoverflow) | ||
| JPS60258987A (ja) | 半導体レ−ザ装置およびその製造方法 | |
| JPS6167285A (ja) | 半導体レ−ザ装置 | |
| JPH02240988A (ja) | 半導体レーザ | |
| JPH04120788A (ja) | 半導体レーザ装置 | |
| JPS6174383A (ja) | 半導体レ−ザアレイ装置およびその製造方法 | |
| JPS6241436B2 (enrdf_load_stackoverflow) |