JPS5956783A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS5956783A
JPS5956783A JP57166938A JP16693882A JPS5956783A JP S5956783 A JPS5956783 A JP S5956783A JP 57166938 A JP57166938 A JP 57166938A JP 16693882 A JP16693882 A JP 16693882A JP S5956783 A JPS5956783 A JP S5956783A
Authority
JP
Japan
Prior art keywords
layer
type
active layer
grown
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57166938A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6347356B2 (enrdf_load_stackoverflow
Inventor
Masaaki Oshima
大島　正晃
Katsuhiko Muto
勝彦 武藤
Noriyuki Hirayama
平山　則行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57166938A priority Critical patent/JPS5956783A/ja
Publication of JPS5956783A publication Critical patent/JPS5956783A/ja
Publication of JPS6347356B2 publication Critical patent/JPS6347356B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP57166938A 1982-09-25 1982-09-25 半導体レ−ザ Granted JPS5956783A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57166938A JPS5956783A (ja) 1982-09-25 1982-09-25 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57166938A JPS5956783A (ja) 1982-09-25 1982-09-25 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS5956783A true JPS5956783A (ja) 1984-04-02
JPS6347356B2 JPS6347356B2 (enrdf_load_stackoverflow) 1988-09-21

Family

ID=15840427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57166938A Granted JPS5956783A (ja) 1982-09-25 1982-09-25 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS5956783A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254987A (ja) * 1985-09-04 1987-03-10 Hitachi Ltd 半導体レ−ザ装置
JPH08307010A (ja) * 1996-04-22 1996-11-22 Hitachi Ltd 半導体レーザ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63214779A (ja) * 1987-03-03 1988-09-07 Mita Ind Co Ltd 現像剤供給機構

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254987A (ja) * 1985-09-04 1987-03-10 Hitachi Ltd 半導体レ−ザ装置
JPH08307010A (ja) * 1996-04-22 1996-11-22 Hitachi Ltd 半導体レーザ

Also Published As

Publication number Publication date
JPS6347356B2 (enrdf_load_stackoverflow) 1988-09-21

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