JPS5953679A - Magnetron sputtering apparatus - Google Patents

Magnetron sputtering apparatus

Info

Publication number
JPS5953679A
JPS5953679A JP16247882A JP16247882A JPS5953679A JP S5953679 A JPS5953679 A JP S5953679A JP 16247882 A JP16247882 A JP 16247882A JP 16247882 A JP16247882 A JP 16247882A JP S5953679 A JPS5953679 A JP S5953679A
Authority
JP
Japan
Prior art keywords
target
magnet
vessel
vacuum container
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16247882A
Other languages
Japanese (ja)
Inventor
Katsuhisa Enjoji
勝久 円城寺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Sheet Glass Co Ltd
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Priority to JP16247882A priority Critical patent/JPS5953679A/en
Publication of JPS5953679A publication Critical patent/JPS5953679A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • H01J37/3408Planar magnetron sputtering

Abstract

PURPOSE:To make the thickness of a film to be formed on a substrate uniform over a large area, by placing a magnetic body close to the rear side of a target between the peripheral and central magnets of a magnetic device. CONSTITUTION:The titled apparatus is composed of a vacuum vessel 1, an exhaust means to evacuate the vessel 1 to a prescribed pressure, a rectangular flat target 6 put in the vessel 1, a magnetic device installed close to the rear side of the target 6 and consisting of a frame-shaped peripheral magnet 4 along the periphery of the target 6 and a central magnet 9, conveyors 4, 4', 4'' for conveying a substrate over the surface of the target 6 in a direction perpendicular to the major sides of the target 6, a means of supplying gas to the vessel 1, and a power source 14 for applying voltage between the vessel 1 and the target 6. A magnetic body 11 is placed close to the rear side of the target 6 between the magnets 8, 9.

Description

【発明の詳細な説明】 本発明は平板型マグネトロンスパッタリンク装置、特に
基板表面に均−l、り厚シの薄II&:を形成すイ)の
に適した平板型マグネトロンス/くツクリング装置に関
する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a flat plate type magnetron sputter linking apparatus, particularly to a flat plate type magnetron sputter linking apparatus suitable for forming a thin layer with a uniform thickness on the surface of a substrate. .

従来、平板型マグ;「・トロンスパッタリング装置は真
空容器と、該J2“r 717容器を所定1Fにυ1気
ずイ)抽気手段と、該真空容器内に設けしねた長寿彫状
の平板ターゲットと、該ターゲットの裏面K 1g近し
てその周辺に沿う」、5 K r投げらコまた枠状の外
周部磁石とその中央部に長辺に白って設OL’) I+
か中央i′り1貿磁石とからなる磁気装置と、該ターゲ
ットの表面に面して該クーゲットの長辺を(る°fUJ
イ)方向にノ)シ板を移送ず2)ための移送装置と、該
白シ;2容器内kU。
Conventionally, a flat plate type magnet sputtering apparatus includes a vacuum vessel, a bleed means for moving the J2"r 717 vessel to a predetermined 1F, and a long-life carved flat plate target provided in the vacuum vessel. , 1g close to the back surface of the target and along its periphery.
A magnetic device consisting of a magnet with a center i′, and a long side of the cugett facing the surface of the target (°fUJ
A) A transfer device for transferring the board in the direction A) and a transfer device for transferring the board in the direction A) and the board in the two containers.

ガスを供給するだめの手段と、該↓”■空容器と該クー
ゲットとの間に111圧を印加−4′;!、)ための電
4i;iとから構成されている。この上うな゛に仮型マ
クネILノンスパッタリング装置は真空容器をffJl
気F段により所定の真空度に減圧I−だ後、アルゴン′
Sの不活性ガス、あるいはアルゴンカスと酸累ガスどの
/l111合し−た反t+i+、・!/Iカスを該真空
容器内に−・>1・の流1行て導入し、11つ一定のU
1気[IiでIll気して真空容器内の真空度を10 
乃至/ OTo r 1台に保持し、電源に、l、リタ
ーうノドに該貞空容藷にス・1(て(’3.O)電圧を
印加し放電を発生さぜ、磁気装置に、しり磁界σ)レ用
ズイノ1川でクロー放電のフラズマ4h該ノJ−ゲット
の表面に集中さぜイ)ことに、)、す、該タークノト物
質をスパックリングさぜ、移送装置i7.:により該タ
ーゲノ)・の表面に而して移送さ一ト↓ろノ山板の表面
に薄11&:を形成するに利用されてし・た。こ())
マク不l・ロンスノぐツクリングに」、る薄111M;
の形成は高迷いニターゲノトをスパッタリングでき、I
l、<)連νじ的(/こ薄膜の形成ができるので、薄膜
の形成の4産″ビ[が高いため、種々の%、’J IK
’ 形成に利用さ、+1てt、3つ、!f、’J(Fク
ロJ・金属の薄膜とか酸化インジウムを・主体と−4−
る透明導?lL性の酸化物薄膜の形成に−(1川てル〕
イ)1、 しかし、/、「がら、前述の平板型スパッタリング装置
に、1−ろ/Iす膜の形成は薄膜の1qみが基板θ)移
送方向ては■は均一となるが、基板の移送ノJ向に面角
な方向(以1・基板の幅り向と呼ふ)には4・均一とな
る欠点があった。
It consists of means for supplying gas, and an electric current for applying 111 pressure between the empty container and the cuget. Temporary type Macune IL non-sputtering equipment uses a vacuum container as ffJl.
After reducing the pressure to a predetermined degree of vacuum using the air F stage, argon'
S inert gas or argon gas and acid accumulative gas /l111 - antit+i+,...! /I waste is introduced into the vacuum container in one stream of −・>1・, and 11 constant U
1 atmosphere [Ill with Ii to increase the degree of vacuum in the vacuum container to 10
~ / Hold one OTo r unit, apply a voltage of 1 ('3.O) to the empty container in the power supply, and generate a discharge in the magnetic device. The magnetic field σ) is used to concentrate the plasma of the claw discharge on the surface of the target material, especially the transfer device i7. It was transferred to the surface of the target plate and was used to form a thin layer on the surface of the funnel plate. child())
MacFil Ronsnogutsukling ni”, Ruusu 111M;
The formation of nitrates can be sputtered, and I
Since the formation of a continuous thin film is possible, the yield of the thin film formation is high, so that various %, 'J IK
'Used for formation, +1, 3,! f, 'J (F black J・Metal thin film or indium oxide・Main body and -4-
Transparent guide? For the formation of lL-type oxide thin films - (1 Kawateru)
b) 1. However, in the above-mentioned flat plate sputtering apparatus, 1q of the thin film is uniform on the substrate θ), but There was a drawback that the plane angle in the J direction of the transfer (hereinafter referred to as 1. width direction of the substrate) was 4. uniform.

本発明は前述の゛ド板jlilJスパッタリング装置の
イji−7,欠点を解決1べくムーさね/ニヘ、のてA
・37、て、本発明は真空8蒸と、該貞り;2容器な所
定用−に1J[気する(41気手段と、該真空容器内に
二股り1′シねた長〕j杉状の平(liiターウ71・
と、該々−ヶノトの裏面に接近してその周辺に沿うよつ
に設り1)寸1だ棒状の夕1周部磁石とその中央)τ]
骨(1説げらλl/二中史中央、li &U (iとか
ら79〔イ]磁気装置と、該ターケノ1の表面に而して
該ターゲットの長辺を横l、lJイ〕ノJ向にノ山イJ
J、を移送すイ)ための移送装置と、該真空容器内1g
カスを供給−4ろための手段と、該真空8掛:と該ター
ケノトミ との間に型砕を印加−4るための電源とか1.:、ノ、
(るマグイトロンスバノタリンゲ装置に、tいいて1.
+4 (tJ磁気装置外周部磁石とその中央部磁イ1と
間の該ターゲット裏面に近接して磁性体を設りた。こと
を、 71i徴とする甲板型マグネトロンスパッタリン
グ皆置テある。
The present invention aims to solve the problems and disadvantages of the above-mentioned board sputtering apparatus.
・37, The present invention uses a vacuum 8 steamer and a 1 J cedar for the specified purpose of 2 containers (41 gas means and a length of 1' bent in two in the vacuum container). Taira (lii Taau 71・
And, each one is placed close to the back side of the magnet and along its periphery.
Bone (1 theory λl / 2 Middle History Central, li & U (i and 79 [a] magnetic device, and the long side of the target on the surface of the turret 1) On the other side of the mountain I J
A transfer device for transferring J, and 1g in the vacuum container
1. A means for supplying and filtering the scum, and a power source for applying mold crushing between the vacuum 8 and the turret. :,of,
(To the Maguitron Subanotaringe device, 1.
+4 (A magnetic material is provided close to the back surface of the target between the outer peripheral magnet of the tJ magnetic device and the central magnet 1.) There is a deck-type magnetron sputtering system with a feature of 71i.

本発明において、磁気装置の外周部磁イ1とその11月
IQ 、’:シりどj” l奮(自+lV兜j、14イ
1 し)中央部7I荷石との間のターゲノ) 1%面に
近接して設りる7171 (rb体とじてに1、分(、
珪;(り泪、及びニノウル/′3の高透磁率JJ料を用
いることができ、1゛′JにOlS乃至J、Qnlmの
j!1JJ)の9ノ、板が好んで用いられる。
In the present invention, the target area between the outer peripheral part of the magnetic device 1 and the central part 7I of the magnetic device is 1. 7171 installed close to the % surface (1, min as rb body) (,
A high permeability JJ material with a diameter of 100 mm or less can be used, and a 9 plate with 1 JJ of OlS to J and 1 JJ of Qnlm is preferably used.

本発明において前述のrili性体(j通常夕1周fτ
lX磁石の長手方向と中央部磁石の長手方向との間のタ
ーゲット奥面に近接しでJ’J″りられる。例えi:I
、磁性体とし、て種々の厚、1)の鉄板を用いた場合に
磁性体をdIノだ近くのターゲット表面のG1界の強さ
は牙/表に示す如く変化し、該クーゲット表面上の磁界
の強さが均一化する。
In the present invention, the above-mentioned rili body (j usually one round fτ
J'J'' can be placed close to the back surface of the target between the longitudinal direction of the lX magnet and the longitudinal direction of the central magnet.For example, i:I
When iron plates of various thicknesses (1) are used as a magnetic material, the strength of the G1 field on the target surface near the magnetic material dI changes as shown in the table; The strength of the magnetic field becomes uniform.

従って、本発明によるときは、スパッタリングによるク
ーゲノl物質の侵食屓がターゲットの長手方向に直交す
る方向に3<ノー化され、11(板の1・b)方向(t
こ均一な厚67□の薄’j、’+4うど形成−すること
がてぎイ)。
Therefore, according to the present invention, the erosion of the Kugenol material by sputtering is made to be 3<no in the direction perpendicular to the longitudinal direction of the target, and the 11 (1 b of the plate) direction (t
It is necessary to form a thin layer with a uniform thickness of 67□.

以[・、本発明の実施例を図面を引用して1;)′述−
・磁石。
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
·magnet.

貞空容藩/内にガラス基板jの両側縁を支えて移送てぎ
イ)基板移送装置llを設(1、この移送装置//に」
−ってij[搬さ41ろガラスノ、1、仮3−の経路に
向(1て、移送方向の長さ/ 27111??2×移送
力向(4111′1角Zf力向/737 +++ +u
の長方形状の90 屯:i1%σ)インジコウムと70
贋口の錫の合金クーケノト扱乙を陰4版7に設り、ター
ウッド板乙の史面(lこ接近してその1,16辺に沿5
よ5に1投けらねた(・1G状の外周部磁石ととその中
央部に長辺方向に1役0シ〕ねた中央部If3779と
からなる磁気装置10を設(J、更に外周部磁石とと中
央部(iH石ワとの間にターケyl・仮乙の裏面に近接
して即さO,!i 111111の鉄イブj//、//
’を設ける。磁気装置10は珂・−図に示−4如く夕1
周部磁石gは長辺方向の長さググ(:l Ill Il
l X ’、i”:i辺力向の長さ/ Og +++、
+++ X I’lJ乙+11 +++の大きさ゛(ル
、す、ターゲット板6側がN4ii1(、その反ス・j
側がS(余で磁イIのN 棒近くの磁界の強さが730
0カウスの磁石てあり、中央部磁石9は長辺方向の長さ
370o++o X11 / 21+ +++の人きさ
てル)す、クーケノト板乙■用がS極、その反則側かN
 1ii4て磁イ1のS極近くのli好界の強さか/乙
00ガウスてあり、外周部磁イ■ざの8(徹と中すJ部
磁石ワのN極とは継V、/、2=C連つ″(二いイ)3
、また、外周部磁石gと中央部磁(〒9とθ)間に設り
【′)ハるV、板//、//は夫々’l O+++ 1
11 X 、2 I O11111+の人きさである。
Set up a substrate transfer device (1) inside which supports and transfers both edges of the glass substrate (1) to this transfer device.
- is ij [carrying 41 ro glass no, 1, temporary 3- direction (1 te, length in the transport direction / 27111?? 2 × transport force direction (4111' 1 angle Zf force direction / 737 +++ +u
90 tons of rectangular shape: i1%σ) indicium and 70
The counterfeit tin alloy Cukenote is placed on the 4th edition 7th edition, and the history page of the Tarwood board (1) is placed closer along the 1st and 16th sides.
A magnetic device 10 is installed, which consists of a 1 G-shaped outer peripheral magnet and a central part If3779 with a 1 G-shaped outer peripheral magnet and a central part If3779 with a 1 role and 0 characters in the long side direction. Between the magnet and the central part (iH stone wa), close to the back of the tarkeyl/kari-otsu O,!i 111111 iron eve j//, //
' is provided. The magnetic device 10 is installed as shown in Figure 4.
The length of the peripheral magnet g in the long side direction is google (:l Ill Il
l X', i": Length of i side force direction / Og +++,
+++
The side is S (the remainder is magnetic I, N) The strength of the magnetic field near the bar is 730
There is a magnet with a diameter of 0. The central magnet 9 has a length of 370 o + + o in the long side direction.
The strength of the li positive field near the S pole of the magnet 1 is / O 00 Gauss, and the outer periphery of the magnet is 8 (the N pole of the J part magnet W is joint V, /, 2 = C consecutive'' (two a) 3
, Also, between the outer circumferential magnet g and the central magnet (〒9 and θ), [') V, plate //, // are respectively 'l O+++ 1
11 X, 2 I O11111+ humanity.

なお、これらの磁気装置10の設;〕られたl跳J:f
セフ内には導水[’+7’から冷)、II水か導入され
、I−Jl水[17”からυ1水して冷却水を循」]d
して陰イ;仮、磁気装置10及びターゲソ+−4に乙を
冷却すイ)。
In addition, the setting of these magnetic devices 10;
In the interior of the Cef, water is introduced [cooled from '+7'], II water is introduced, and I-Jl water [υ1 water is circulated from 17" to circulate cooling water"] d
Temporarily, the magnetic device 10 and target sensor +-4 are cooled.

また、真空容器/の最」二手側に連結されてカラス基板
供給のための真空予備室2が設けし)ね、またその最下
子側に連結されて、薄膜の膨成さねたガラス袖板を取出
す真空予11iif室3が設(]られ、貞夜空備室2,
3内には夫々基板移送装置グ/、l//が設りられ、真
空容器/と真空予備q:、:z、3との間には夫々可動
のゲートノ・ルブ/3″、73″′が62ケられ、真空
予備室−のカラス基板供給1−1に11」動のケートバ
ルフ乙′を、真空予備室3の取IJ日−IKはクー1ハ
ルフ乙″″を設けである。
In addition, a vacuum preparatory chamber 2 for supplying glass substrates is connected to the second most side of the vacuum container, and a glass sleeve plate connected to the bottom side of the vacuum chamber is connected to the secondmost side of the vacuum vessel for supplying glass substrates. A vacuum pre-11iif room 3 for taking out the air is installed,
Substrate transfer devices g/, l// are installed in each of the chambers 3, and movable gate knobs/3", 73"' are provided between the vacuum container/ and the vacuum spares q:, :z, and 3, respectively. The glass substrate supply 1-1 of the vacuum preliminary chamber 3 is equipped with an 11-inch Kate valve, and the vacuum preliminary chamber 3 is equipped with a 1-half chamber.

真空客器/及び真空1’ (r:i°j室3,3にはに
)(の1・?tllに設げらねた4J1気II /’、
 2’、 3’に連ったIJ]気系(図省略)によりJ
ul気てきろようにな7.ている。
Vacuum equipment/and vacuum 1' (r:i°j room 3, 3) (4J1ki II/',
IJ connected to 2', 3'] J due to air system (figure omitted)
7. ing.

ゲートハルツ73′を開りカラスフ。目j・シ、34−
・真空1−fjiii室!内の基板移送装置ブトに11
曵置し7、′J−トハルフ乙′を閉じ、真空容器/、及
びム゛(空r−備室)、3内を減圧し、ケートハルフ乙
を開()、1、′fす1りF f+iii室ノ内のカラ
スフ11板汐を移動さ一已、う−lハハ ノ乙′を閉じ
ろ。直空容ぼ1号/の1J1気系11、図外())クツ
rAポンプとロータリーポンプとの組合・1」に1−リ
、1゛(空容掛)/内を−[:]、 / 0  ’I’
 +月1台の貞′ノ1−二j1↓υこ+++気し、続い
て真空容器/内にカスを供給゛1べ)ノノスハイフ/3
−から90体積%のアルゴンカス、l−10体積%の酸
素ガスの混合ガスを流t1ト100S(’、t’、11
+(スタンダード立方センナ7分)のl’+lI含てL
゛1空容a;;/内に供給し、抽気系でのυ1気速1%
とのrノ合いて<lt空容藩/内の真空度を約3 X 
/ Oi’ +l 1−1の−>+21f K M+持
し、電源/lに」:す、真空ぞ1汗、に/か「)絶縁体
/乙により絶縁された陰イ販7 (i(L’l: i〕
)で容J、Y / ’r’をニス・Iして−qoovの
?Ij II:を印加してスノくツクをし/1h・E)
 f&送装置11 &i二」、リカラスノ1(イ1シj
を・クーうノド乙の一1面を移動さ−リ′、酸化′i(
4ろ含む酸化インンウム薄111シ′tをカラス基板j
のi(+1lrXjlf成した。この、1、つにして、
′1す膜をイ’J’ z+’i j−たカラスノJ板S
(よ、(g送装置クシ・二1つ史に移送さJl、う−ト
ノ・ルフ乙″′を開り貞3゛の一リンプルを外部に取出
した。
Open Gateharz 73' and Karasuf. Me J. Shi, 34-
・Vacuum 1-fjiii room! 11 to the substrate transfer device inside
7. Close the 'J-to-half', reduce the pressure inside the vacuum vessel/, and the room (empty room), 3, open the 'J-to-half' (), 1. Move the Karasufu 11 board in the f+iii room and close the U-lhaha no Otsu'. 1J1 air system 11 of direct air capacity No. 1/, not shown ()) Combination of shoes rA pump and rotary pump・1", 1-ri, 1" (empty capacity)/inside -[:], / 0 'I'
+One unit per month of Tei'no 1-2 ↓υ +++, then feed the waste into the vacuum container / ゛1be) Nonoshaifu / 3
- A mixed gas of 90 volume % argon gas and l-10 volume % oxygen gas was flowed from t1 to 100S (', t', 11
+ (Standard cubic senna 7 minutes) l'+lI included L
゛1 air volume a;; / is supplied, υ1 air velocity 1% in the extraction system
The degree of vacuum inside is approximately 3X.
/ Oi' +l 1-1's -> +21f K M + holding, power supply / l': vacuum, 1 sweat, n/ka ') insulator / insulated by Oi sales 7 (i (L 'l: i〕
) in Yong J, Y/'r' varnish I -qoov? Ij II: is applied and the snow is removed /1h・E)
f & feed device 11 & i 2'', Rikarasu no 1
・Move the 11th surface of the throat, oxidize (
Indium oxide thin 111 sheets containing 4 ml of glass substrate
i(+1lrXjlf) was created.
'J'z+'ij-' Karasuno J board S
(The transfer device was transferred to the 21st column.) I opened the holder and took out one rim of the 3-inch tube.

この、Lうにして省lもねた゛リンプルの11+力向の
11・1′・ グ厚分布とターウッド板乙及び(−気装
置10との関係を2・2図に示1.11−、カラス基板
Sの而に形1ノvさねた薄膜のIJ&j厚の変動か3−
%以内の一ジノプルのイj効rlは32cmであ−、た
Figure 2.2 shows the relationship between the thickness distribution of the 11 + force direction of the rimple, which was saved in this way, and the turwood board and (-) device 10. Is there a variation in the IJ&J thickness of the thin film that is shaped like a glass substrate S? 3-
The ij effect rl of Dinopur within % was 32 cm.

次に磁気装置10の外周部磁石とと中央部磁石ワとの間
に設けl’J b i、−鉄//、//’を取り除いた
外は実施例と全く同−条(’lでスパックをY1′’−
・Jし中2リンプルを得た。この比較タンブルのIIJ
力向の膜+ty分布とターゲノ14に乙及び磁気製j/
’/ / 0との関係な第3図に示した。カラス基板の
而に杉成さAした薄11’+1σ刈Iつj厚σ)変動が
3%以内の比較−l) /ノル())(。
Next, the same strips ('l') were provided between the outer circumferential magnet and the central magnet of the magnetic device 10, except that the l'J b i, -iron//, //' were removed. Spack Y1''-
・I played J and got 2 rimples. IIJ of this comparison tumble
Force direction film +ty distribution and target number 14 and magnetic j/
The relationship with '//0 is shown in Figure 3. The glass substrate was made of cedar, and the thickness was 11'+1σ, and the variation was within 3%.

交1)11ノ (ま 、2 ’l  (IIIじ(Aリ
 リ 、   不発 明 に 1、 イ1 リ ン  
] ノ1ノ)イ■効1[J」、すg c+++も小てあ
った。
Interchange 1) 11 No
] ノ1ノ)I■Effect 1[J'', Sg c++++ was also small.

以」から明らかなtJU <、本発明し−11、イ)平
板マダイ; l・(rンスバノタリング装置に、1、す
々一つ)l−i表面の1m ’!+” ’、+6i サ
’c 均一 11&7 +:/分4+ カ(’、J ”
J J L Z+ 、1、うに弯史てきるのて、基板面
上Vこ形成、さゎ<:)薄11・□、゛・の膜j1ハ1
4Jを広い面積て均一に−(ろことができ、!L:!1
品の/J:、産:1:を増加することがてさろ。
It is clear from the following that tJU <, according to the present invention-11, a) flat red sea bream; l. +” ', +6i Sa'c Uniform 11 & 7 +: /min4+ Ka (', J ”
J J L Z+ , 1, After the sea urchin history comes, V-shaped formation on the substrate surface, Sawa<:) Thin 11・□,゛・film j1c1
4J can be uniformly spread over a wide area (!L:!1
It is possible to increase /J:, production:1: of goods.

図面θ)「i(i lit /工1.)3明図面は本発
明の実施を示−4−ものて3(す、て1、第7図はスパ
ッタリング装置の縦11)1面1.と1、牙、、21+
−置]、本発明の・l’ &型マグネトロンスノζツタ
リンクドゞ、;1゛置・イーより製造された→ノンプル
の111方向の114“LI’、’j /)′):(I
i 、’l々−ゲノl−板及び磁気装置との関係イ(・
小・1図、゛イ3Z +i−従来のマグ不トロンスバノ
タリシグ1/、置い−1り製Jチクされたタンブルのr
IJ/J−向のII・□l!’:I−、+分布とクーゲ
ット板及び磁気装置との関係る示・1図てA1ろ、。
Drawing θ) "i (i lit /Eng. 1.) 3 The bright drawing shows the implementation of the present invention. 1, Fang,, 21+
114 "LI', 'j /)') in the 111 direction of → non-pull manufactured from
i,'l-geno-l-plate and the relationship with the magnetic device a(・
Small, 1 figure, ゛I3Z +i-Conventional mag-outronsbanotarisig 1/, set-1R made J-tipped tumble r
IJ/J-direction II・□l! Figure 1 shows the relationship between the I- and + distributions, the Cougett plate, and the magnetic device.

/:真空容器、/′:υ1気II、  グ:林テしν置
3−:ガラスノ、し板、 乙:1′板り−う〕1 。
/: Vacuum container, /': υ1ki II, Gu: Hayashi Teshi ν place 3-: Glass no, Shiita, Otsu: 1' Itari-U〕1.

と:夕[周部磁石、  ワ:中り4部磁イ1゜//:磁
fI体、    / ’l :電 源。
and: evening [peripheral magnet, wa: center 4 part magnet 1゜//: magnetic fI body, /'l: power supply.

第1図 第2図 1し板イ立L   (cm) 第3図 =リー1反イ立l(cm) 手  続  袖  正  ギJ i1/イ和3g年2 月/21] 11乳′Iノ′]長′11;殿 / 小作の表j・ 特願昭37−74277g号 怖j唖MI’t=−−−号 一 発明の名称 マグ了10/スバッタリ/ゲ渉置 3、    tlli−iJ二をする 名小作との関係
 特許出願人 イ1 所 大阪府大阪市東区道修町4丁1」8番地名 
称 (aoo ) IEI本板硝子株式会拐代表者  
刺  賀  信  k、11り代理人
Figure 1 Figure 2 Figure 2 1 Lie 1 (cm) Figure 3 = 1 Lie 1 (cm) '] Long'11; Mr. / Tenant Table of Works / Patent Application No. 37-74277g Scary MI't = --- No. 1 Name of Invention Magryo 10 / Sbattari / Gekisho 3, tlli-iJ 2 Relationship with famous tenant farmers Patent applicant 1 Address: 4-1 Doshomachi, Higashi-ku, Osaka-shi, Osaka Prefecture Address: 8
Name (aoo) Representative of IEI Honten Glass Co., Ltd.
Shin Saiga K, 11th agent

Claims (1)

【特許請求の範囲】 真空容器と該真空容器を所定圧にJul気−14)1ノ
[気手段と、該真空容器内に設げらAまた長力彫状の−
゛1′板ターゲタ−ゲットクーゲットの裏面に接近して
その周辺に沿うように設けしjlだ棒状の外周部磁石と
その中央部に1投げられた中央部磁石とから/jる磁気
装置ttと、該クーゲットの表面に而して該クーゲット
の長辺を横切る方向に基板を移送1ろための移送装置と
、該真空容器内にガスを供給−I−イ。 ための手段と、該真空容器と該ターゲットどの間に71
:i IFを印加するための?IX源とから1.るマグ
イ・トロンスパッタリング装置において、該磁気装置の
外周部磁石とその中央部磁石と間の該クーゲット裏面に
近接して磁性体を設げたことを牛¥j徴とする平板型マ
グネトロンスパッタリング装置ii′t。
[Claims] A vacuum container and a long force-shaped means provided in the vacuum container to bring the vacuum container to a predetermined pressure.
゛1' Plate target A magnetic device consisting of a bar-shaped outer circumferential magnet and a central magnet placed in the center thereof, which is installed close to the back surface of the target and along its periphery. a transfer device for transferring the substrate onto the surface of the cuget in a direction transverse to the long side of the cuget; and supplying gas into the vacuum container. 71 between the vacuum container and the target;
:i For applying IF? From IX source 1. A flat plate type magnetron sputtering device ii' in which a magnetic material is provided in close proximity to the back surface of the Kuget between the outer peripheral magnet of the magnetic device and the central magnet. t.
JP16247882A 1982-09-18 1982-09-18 Magnetron sputtering apparatus Pending JPS5953679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16247882A JPS5953679A (en) 1982-09-18 1982-09-18 Magnetron sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16247882A JPS5953679A (en) 1982-09-18 1982-09-18 Magnetron sputtering apparatus

Publications (1)

Publication Number Publication Date
JPS5953679A true JPS5953679A (en) 1984-03-28

Family

ID=15755377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16247882A Pending JPS5953679A (en) 1982-09-18 1982-09-18 Magnetron sputtering apparatus

Country Status (1)

Country Link
JP (1) JPS5953679A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4865709A (en) * 1987-06-16 1989-09-12 Hitachi, Ltd. Magnetron sputter apparatus and method for forming films by using the same apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4865709A (en) * 1987-06-16 1989-09-12 Hitachi, Ltd. Magnetron sputter apparatus and method for forming films by using the same apparatus

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