JPS5953674A - Chemical vapor deposition method - Google Patents
Chemical vapor deposition methodInfo
- Publication number
- JPS5953674A JPS5953674A JP16275982A JP16275982A JPS5953674A JP S5953674 A JPS5953674 A JP S5953674A JP 16275982 A JP16275982 A JP 16275982A JP 16275982 A JP16275982 A JP 16275982A JP S5953674 A JPS5953674 A JP S5953674A
- Authority
- JP
- Japan
- Prior art keywords
- gaseous
- substrate
- gas
- tube
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
Abstract
Description
【発明の詳細な説明】
本発明は化学蒸着法に係り、酸化硅３Ｋ １１６ｊの製
法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a chemical vapor deposition method, and relates to a method for producing 3K 116j silicon oxide.
従来、酸化硅素膜を常圧で育成する方法としては、シラ
ン・ガス（ＳｉＨ４）と酸素ガスを反応ガスとして、窒
素ガスをキャリヤ・ガスとして、反応炉内に’ｐ、ｌ（
１人し、常Ｈ二状、照で、被膜形成基板温度ば４００°
Ｃで酸化硅素膜をｎ成するのが通例であった。Conventionally, the method of growing a silicon oxide film at normal pressure has been to use silane gas (SiH4) and oxygen gas as reaction gases, nitrogen gas as carrier gas, and 'p,
When the temperature of the film forming substrate is 400° under normal conditions,
It was customary to form a silicon oxide film using carbon.
本発明は常圧でかつ低温で酸化硅素膜を形成する方法を
提供する４ｆを目的とする。The object of the present invention is to provide a method for forming a silicon oxide film at normal pressure and low temperature.
上ｎｒ２目的を達成するための本発明の基本的な構成は
、化学蒸着法において、シラン・ガスと酸素ガスを反応
ガスとし、窒素ガスをキャリヤ・ガスとして石英窓を含
む反応炉内に導入し、常圧状態で該反応ガスに石英窓か
ら遠紫外光線を照射して、被膜形成基板温度を２００°
Ｃ以下の低湿で、酸化硅素膜を育成することを特徴とす
る。The basic configuration of the present invention to achieve the above nr2 objective is that in a chemical vapor deposition method, silane gas and oxygen gas are used as reaction gases, and nitrogen gas is introduced as a carrier gas into a reactor containing a quartz window. , the reaction gas was irradiated with deep ultraviolet light through a quartz window under normal pressure, and the temperature of the film-forming substrate was raised to 200°.
It is characterized by growing a silicon oxide film at low humidity below C.
以下に実施例により本発明を詳述する。The present invention will be explained in detail with reference to Examples below.
第１図は本発明による化学蒸着法の一実施例を示す方式
の模式図であり、石英反応管１にはアルミニウム支持台
２とその上にのせられたＳ１ウエハ６が設ｆＲされ、反
応管の蓋４がはめられる。反応管内にはバルブ５および
流−ＩＩ計６を通してガス量が制御されたＮ、ガス、
Ｓ ｊ−Ｈ，、ガスおよび０２ガスがパイプ７８９を）
ＴＯシてバイブ１０で合流して反応管内に送シ込まれ、
υ１ガスは反応管の蓋４につ（プらね５た排カスバイブ
１１よりＪｌｌ ｌＪｉされる。反応は、支持台２を赤
外線ランプ１２により裏面より１５０°Ｃに加熱され、
Ｓｉウェハー乙の表１１１１には遠紫外線ランプ１３か
らの遠紫外線が照射されて、行なわれ、Ｓｌ−ウェーハ
３の表面に酸化ＪＩ′ｌ“メ〈被膜が形成される。FIG. 1 is a schematic diagram showing an embodiment of the chemical vapor deposition method according to the present invention.A quartz reaction tube 1 is equipped with an aluminum support 2 and an S1 wafer 6 placed thereon. The lid 4 is fitted. Inside the reaction tube, N, gas, gas, whose gas amount was controlled through a valve 5 and a flow-II meter 6, were contained.
S j-H, gas and 02 gas connect pipe 789)
TO is combined at the vibrator 10 and sent into the reaction tube,
The υ1 gas is applied to the lid 4 of the reaction tube from the exhaust vibrator 11. For the reaction, the support 2 is heated to 150°C from the back side with an infrared lamp 12.
The front surface 1111 of the Si wafer 3 is irradiated with deep ultraviolet rays from the deep ultraviolet lamp 13, and an oxidized JI'l'' film is formed on the surface of the Si wafer 3.
このイ子なｔａｒｔ成により１５０°Ｃ稈度の低温で、
２０００θ０／犯以上の辻度で酸化（１１・素抜ｊ摸が
形成できるが、その用Ｉ山は、遠紫外線により反ルト１
、ガス中の酸素ガスが遠紫外線によりオゾンど〕（す、
反応が低湿でも活性化されるためである。Due to this rapid tart formation, at a low temperature of 150°C,
Oxidation (11) can be formed at a cross-sectional degree of 2000θ0/2000° or higher, but the I mountain is oxidized by deep ultraviolet rays.
, the oxygen gas in the gas becomes ozone due to far ultraviolet rays.
This is because the reaction is activated even at low humidity.
本発明による化学蒸着法でＩｔＪ、 ２００″Ｃ以」−
の低温で酸化硅素被膜が形成できる効果がＡｒ）る。ItJ, 200″C or higher by chemical vapor deposition method according to the present invention
There is an effect that a silicon oxide film can be formed at a low temperature of (Ar).
本発明の応用分野として、Ｓ１半導体素子をリード・ク
レーム等にワイヤー・ボンディングした後に酸化硅素被
膜を保護ｊ１〆とじて形成する場合や、プラスチック製
品の表面保設被膜として用いることができる。As an application field of the present invention, it can be used when forming a silicon oxide film as a protective film after wire bonding an S1 semiconductor element to a lead claim, etc., or as a surface preservation film for plastic products.
第１１＞？ｔ ＩｒＪ、本発明の一実／１ｉｌｉ例を示
す化学蒸着法の模式図である。
１・・・・・・石英反ル１′、、管
２・・・・・・支持台
３・・・・・・被膜形成Ｊｊｊ板
４・・・・・・反応管蓋
５・・・・・・バルブ
６・・・・・・流最泪
７．８，９．１０・・・・・・パイプ
１１・・・・・・排気バｒブ
１２・・・・・・赤外線ピータ−
１３・・・・・・遠紫外′Ｌ線ラうプ
以 」二
出願人 株式会社＊ｌ’！訪！ｉ’＋’Ｊ工舎代ｆ４１
ｊ人 弁理士 最上 務No. 11>? tIrJ, is a schematic diagram of a chemical vapor deposition method showing an example of the present invention. 1... Quartz roll 1', tube 2... Support stand 3... Film formation Jjj plate 4... Reaction tube lid 5...・・Valve 6・・・・Flow 7.8, 9.10・・・・Pipe 11・・・・Exhaust valve 12・・・・Infrared Peter 13・...Far UV 'L-ray Rape' Second Applicant: Co., Ltd. *l'! Visit! i'+'J workshop fee f41
J Patent Attorney Tsutomu Mogami
Claims (1)
キャリヤ・ガスとして石英窓を含む反応炉内に導入し、
常圧状態で、該反応ガスに石英窓から遠紫外光線を照射
して、被膜形成基板温度を２００°Ｃ以下の低湿で、酸
化硅素ｊ漠を育成することを勃徴とする化学蒸着法。Introducing silane gas and oxygen gas as reaction gases and nitrogen gas as a carrier gas into a reactor containing a quartz window,
A chemical vapor deposition method in which the reactant gas is irradiated with far-ultraviolet rays through a quartz window under normal pressure conditions, and the temperature of the film-forming substrate is kept at 200°C or less and low humidity to grow silicon oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16275982A JPS5953674A (en) | 1982-09-17 | 1982-09-17 | Chemical vapor deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16275982A JPS5953674A (en) | 1982-09-17 | 1982-09-17 | Chemical vapor deposition method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5953674A true JPS5953674A (en) | 1984-03-28 |
Family
ID=15760691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16275982A Pending JPS5953674A (en) | 1982-09-17 | 1982-09-17 | Chemical vapor deposition method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5953674A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6176677A (en) * | 1984-09-25 | 1986-04-19 | Applied Material Japan Kk | Vapor growth method |
| JPS63130775A (en) * | 1986-11-20 | 1988-06-02 | Semiconductor Energy Lab Co Ltd | High speed formation of silicon oxide film |
| US4753818A (en) * | 1986-07-25 | 1988-06-28 | Hughes Aircraft Company | Process for photochemical vapor deposition of oxide layers at enhanced deposition rates |
| EP0289963A1 (en) * | 1987-05-04 | 1988-11-09 | General Signal Corporation | Apparatus for, and methods of, obtaining the movement of a substance to a substrate |
| JPH03107464A (en) * | 1989-08-31 | 1991-05-07 | American Teleph & Telegr Co <Att> | Method and device for accumulating dielectric film |
| CN105513960A (en) * | 2016-01-27 | 2016-04-20 | 武汉华星光电技术有限公司 | Deposition method of silicon oxide thin film and preparation method of low temperature polycrystalline silicon TFT substrate |
-
1982
- 1982-09-17 JP JP16275982A patent/JPS5953674A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6176677A (en) * | 1984-09-25 | 1986-04-19 | Applied Material Japan Kk | Vapor growth method |
| JPH0357189B2 (en) * | 1984-09-25 | 1991-08-30 | ||
| US4753818A (en) * | 1986-07-25 | 1988-06-28 | Hughes Aircraft Company | Process for photochemical vapor deposition of oxide layers at enhanced deposition rates |
| JPH01500444A (en) * | 1986-07-25 | 1989-02-16 | ヒユーズ・エアクラフト・カンパニー | Photochemical vapor deposition method with increased oxide layer growth rate |
| JPH0219189B2 (en) * | 1986-07-25 | 1990-04-27 | Hughes Aircraft Co | |
| JPS63130775A (en) * | 1986-11-20 | 1988-06-02 | Semiconductor Energy Lab Co Ltd | High speed formation of silicon oxide film |
| EP0289963A1 (en) * | 1987-05-04 | 1988-11-09 | General Signal Corporation | Apparatus for, and methods of, obtaining the movement of a substance to a substrate |
| JPH03107464A (en) * | 1989-08-31 | 1991-05-07 | American Teleph & Telegr Co <Att> | Method and device for accumulating dielectric film |
| CN105513960A (en) * | 2016-01-27 | 2016-04-20 | 武汉华星光电技术有限公司 | Deposition method of silicon oxide thin film and preparation method of low temperature polycrystalline silicon TFT substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH049369B2 (en) | ||
| JP2000150513A (en) | Deposition of silicon nitride thin film | |
| JPS6140035B2 (en) | ||
| JPS5953674A (en) | Chemical vapor deposition method | |
| JPS5998726A (en) | Formation of oxide film | |
| JPH0680413A (en) | Method for chemical vapor growth of silicon dioxide film | |
| JPS6177695A (en) | Vapor growth method | |
| JPS5976870A (en) | Formation of oxide film by chemical vapor deposition | |
| JPS6140034B2 (en) | ||
| JPS5927611B2 (en) | Vapor phase growth method | |
| JPH0360918B2 (en) | ||
| JPS59215731A (en) | Manufacture of silicon oxide film | |
| JPS60190566A (en) | Preparation of silicon nitride | |
| JPS5957909A (en) | Formation of amorphous silicon film | |
| JPS6210302B2 (en) | ||
| JPS6118125A (en) | Thin film forming apparatus | |
| JPS61208826A (en) | Semiconductor thin film | |
| JPH04114431A (en) | Oxidization process | |
| JPS62160713A (en) | Photoexcitation film forming equipment | |
| JPH0462073B2 (en) | ||
| JPS61208825A (en) | Semiconductor thin film | |
| JPS6086274A (en) | Preparation of polycrystalline silicon film | |
| JP2511808B2 (en) | Depressurized gas phase method | |
| JPS6278192A (en) | Production of n-type single crystal thin film | |
| JPH0357189B2 (en) |