JPS6086274A - Preparation of polycrystalline silicon film - Google Patents
Preparation of polycrystalline silicon filmInfo
- Publication number
- JPS6086274A JPS6086274A JP19482383A JP19482383A JPS6086274A JP S6086274 A JPS6086274 A JP S6086274A JP 19482383 A JP19482383 A JP 19482383A JP 19482383 A JP19482383 A JP 19482383A JP S6086274 A JPS6086274 A JP S6086274A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- polycrystalline silicon
- substrate
- film
- silicon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Abstract
Description
【発明の詳細な説明】
本発明はシリコンのハロゲン化物、すなわち、５ｉＣ（
１，４、ＳｊＢデ。、あるいはＳ＝工。から蒸発する気
体をキャリアガスによって基板近傍に運び、気相反応に
よる膜の成長を行なうことにより安価な多結晶シリコン
膜を得るための多結晶シリコン膜の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides silicon halide, namely 5iC (
1, 4, SjB de. , or S = engineering. The present invention relates to a method for producing a polycrystalline silicon film, in which an inexpensive polycrystalline silicon film is obtained by transporting gas evaporated from a substrate to the vicinity of a substrate using a carrier gas and growing the film through a gas phase reaction.
多結晶シリコン（以下では多結晶ｓ７とかく、）膜は集
積回路のゲート酸線をはじめ光センサ等の霜、子デバイ
スに広く利用されている。Polycrystalline silicon (hereinafter referred to as polycrystalline S7) films are widely used in gate oxidation lines of integrated circuits, optical sensors, and other child devices.
多結晶Ｓｉ膜の製造方法は従来から、一般に常圧ＣＶＤ
、あるいは減圧ＣｖＤが用いられている。Conventionally, the manufacturing method of polycrystalline Si film is generally atmospheric pressure CVD.
, or reduced pressure CvD is used.
この方法はモノシランガス（ｓｅＨ＋）を熱によって気
相反応させ、基板上に多結晶Ｓ＜を形成する方法である
。In this method, monosilane gas (seH+) is subjected to a vapor phase reaction using heat to form polycrystalline S< on the substrate.
ところが、この方法で用いるモノシランは、１７当り１
００円前後の高価なガスである。このため多結晶シリコ
ンをつける工程が入ることによって、そのデバイスは製
造コストが高くなる。However, the monosilane used in this method has a concentration of 1/17
It is an expensive gas that costs around 00 yen. Therefore, the manufacturing cost of the device increases due to the step of applying polycrystalline silicon.
本発明はかかる欠点を除失したものであって、その目的
とするところは、安価な方法で多結晶ｓｉ膜を作ること
にある。The present invention eliminates these drawbacks, and its purpose is to produce a polycrystalline Si film using an inexpensive method.
本発明の詳細については実施例をもって説明する。気相
反応を起させる手段としては、熱の他にプラズマや光の
エネルギーを利用することができ、それぞれプラズマＯ
’ＶＤ、光ＯＶＤと呼ばれている。また、熱とプラズマ
、熱と光等各エネルギーの組み合せによって気相反応を
起こさせることができる。The details of the present invention will be explained with reference to Examples. In addition to heat, plasma and light energy can be used as a means of causing a gas phase reaction, and plasma O and light energy can be used, respectively.
It is called 'VD, optical OVD. Furthermore, a gas phase reaction can be caused by a combination of energies such as heat and plasma, heat and light, etc.
本発明もエネルギーを与える方法においては従来とかわ
るものではなく、いずれの方法においても多結晶ｓ５を
得ることができ、特性上も大きな差は認められない。The method of applying energy in the present invention is not different from the conventional method, and polycrystalline s5 can be obtained using either method, and there is no significant difference in characteristics.
したがって、以下の説明は熱ＯＶＤの実施例を用いる。Therefore, the following description uses a thermal OVD example.
実施例
第１図は本発明の製造に用いる装置である。同図におい
て、１はキャリアガスのボンベ、２はドーピングガスの
ボンベ、３ａと３ｂは調圧器、４α、！ｌ： ４ ｂ
ハマスフローコントローラ、５α〜５ｃはガス配管、６
はウォータバス、７は水、８はシリコンのハロゲン化物
、９はガス吹出し口、１゜は加熱ヒータ・１１はボート
・１２は基板、１５は炉芯管、１’ ４はメカニカルブ
ースターポンプ、１５は油回転ポンプ、１６αと１６ｂ
はバルブである。Embodiment FIG. 1 shows an apparatus used for manufacturing the present invention. In the figure, 1 is a carrier gas cylinder, 2 is a doping gas cylinder, 3a and 3b are pressure regulators, 4α, ! l: 4 b
Hamas flow controller, 5α to 5c are gas piping, 6
is a water bath, 7 is water, 8 is silicon halide, 9 is a gas outlet, 1° is a heater, 11 is a boat, 12 is a substrate, 15 is a furnace core tube, 1' 4 is a mechanical booster pump, 15 are oil rotary pumps, 16α and 16b
is a valve.
多結晶シリコンの製造方法について述べる。あらかじめ
メカニカルブースターポンプ１４と油回転ポンプ１５に
よって、炉芯管内を約６００ ’Ｏに加熱する。一定の
温度に達したところで、キャリアガス、たとえば水素ガ
スの入ったボンベ１がら調圧器３αで１にｙ ／ ｃｉ
に圧力制御したガスをマス７０−コントローラ４αで流
量を２００〜３００６ｃ／ａｉ＋＋に制御して配Ｗ５ｂ
に流す。配管５ｂを通ったガスはシリコンのハロゲン化
’ｈ ”” ｉ ｃＬ。A method for manufacturing polycrystalline silicon will be described. The inside of the furnace core tube is heated to about 600'O by the mechanical booster pump 14 and the oil rotary pump 15 in advance. When a certain temperature is reached, the cylinder 1 containing carrier gas, such as hydrogen gas, is adjusted to 1 y/ci using a pressure regulator 3α.
Distribute the gas whose pressure is controlled to 200 to 3006c/ai++ using the mass 70 and controller 4α
flow to. The gas passing through the pipe 5b is halogenated silicon.
５ｊＢｒ４ 、Ｓｉ工。の−っ、たとえばｓ＜Ｏｎ＋（
７）液体を通って配管５ｃへと流れる。このときＳ ｉ
Ｏｆｉ４ の温度はウォーターバス６によって、２１
℃に保つ。２１℃におけるｓ＜Ｂ。の分圧は２００ ｕ
ｎ Ｔｏｒｒであり、キャリアガスによってｓ ｔ ａ
Ｑ、の蒸気が配管５ｃに運ばれる。5jBr4, Si engineering. For example, s<On+(
7) Flows through the liquid to pipe 5c. At this time S i
The temperature of Ofi4 is set to 21 by water bath 6.
Keep at ℃. s<B at 21°C. The partial pressure of is 200 u
n Torr, and s ta by carrier gas.
The steam of Q is carried to the pipe 5c.
ボンベ２、調ＦＦ、器３ｂ、マスフローコントローラ４
ｂはドーピング用のガス系で、ホウ素をドーピングした
い場合にはジボラン（Ｂ２Ｈ６）を、リンをドーピング
したい場合にはホスヒン（ＰＨ３）のガスを希釈してボ
ンベ２に充填し・配管５αを通して流す。このガスは配
管５ＧにおいてＳｊＯβ４と混合される。Cylinder 2, key FF, vessel 3b, mass flow controller 4
b is a doping gas system; when doping with boron is desired, diborane (B2H6) is used; when doping with phosphorus is desired, diluted gas of phosphin (PH3) is filled into cylinder 2 and passed through pipe 5α. This gas is mixed with SjOβ4 in the pipe 5G.
バルブ１６ａとバルブ１６ｂとはそれぞれＳ ｉ ＯＱ
４ガス、ドーピングガスの開閉を行なうバルブである０
上記の状態において、５ｌａｐ、ガスは熱分解されｓｉ
になる。その時基板温度を約６００℃という高い温度に
保つことにより、一部が結晶化されて多結晶シリコンと
なる。The valve 16a and the valve 16b are each S i OQ
4 Gas is a valve that opens and closes the doping gas 0 In the above state, 5 laps, the gas is thermally decomposed and Si
become. At that time, by keeping the substrate temperature at a high temperature of about 600° C., a portion of the substrate is crystallized and becomes polycrystalline silicon.
上記実施例では、シリコンのハロゲン化物として５ｉＯ
Ｒ，について説明したがＢ ｉ Ｂ ？’４やｓｉ工。In the above example, 5iO is used as the silicon halide.
I explained about R, but B i B? '4 and si engineering.
を用いても同様に多結晶シリコン膜を作ることができる
。A polycrystalline silicon film can be similarly made using .
また、基板の温度を５００℃くらいに保ちつつ高周波プ
ラズマ−放電によって、熱とプラズマからＳ ｉ Ｏ１
４の分解エネルギーを与えることによっても、多結晶シ
リコンを作ること力ｆできる。In addition, SiO1 is removed from heat and plasma by high-frequency plasma discharge while keeping the temperature of the substrate at about 500°C.
Polycrystalline silicon can also be produced by applying a decomposition energy of 4.
キャリアガスは上記実施例の他にアルゴン、ヘリウムを
用いることができる・しかし、キャリアガスの種類によ
って、膜の性質が異なる。In addition to the above embodiments, argon or helium can be used as the carrier gas. However, the properties of the film differ depending on the type of carrier gas.
例えば・多結晶シリコンを集積回路のゲート配線に用い
る場合、キャリアガスとして水素を用いると、他のガス
に比べ、ＭＯＳ）ランジスタは、ゲート電圧に対するド
レイン電流の立ち上がりが急峻になる。すなわち、チャ
ネル内のキャリア移動度の大きな特性が得られる。For example, when polycrystalline silicon is used for the gate wiring of an integrated circuit, when hydrogen is used as a carrier gas, the drain current rises steeply with respect to the gate voltage in a MOS transistor compared to other gases. That is, a characteristic of high carrier mobility within the channel can be obtained.
一方、キャリアガスにアルゴンを用いると多結晶シリコ
ンの堆積速度は水素やヘリウムに比べて３〜４倍となる
。したがって、短時間に厚い膜を作製する場合にはアル
ゴンが優れている。On the other hand, when argon is used as a carrier gas, the deposition rate of polycrystalline silicon is three to four times that of hydrogen or helium. Therefore, argon is excellent when producing a thick film in a short time.
従来のＣ’ＶＤ法により、モノシランガスから多結晶シ
リコンを作る場合、製造コストに占めるガス化の割合は
３０〜４０％である。これはモノシランガスが１００円
／を前後という非常に高価なガスによるものである。When producing polycrystalline silicon from monosilane gas by the conventional C'VD method, the proportion of gasification in the manufacturing cost is 30 to 40%. This is due to the fact that monosilane gas is very expensive, costing around 100 yen.
本発明では、モノシランガスの代りに１２当り１０円以
下のシリコンハロゲン化物を用いるため多結晶シリコン
の製造コストは６割近く安くなる。In the present invention, silicon halide, which costs less than 10 yen per 12, is used instead of monosilane gas, so the manufacturing cost of polycrystalline silicon is reduced by nearly 60%.
本発明は多結晶シリコンが各種デバイスに広く応用され
るようになってきた現在、安価な製造方法を与えるもの
であって、その利用範囲はきわめて広い。すなわち、集
積回路、薄膜太賜電池、光センサ、液晶表示デバイスの
チイソチング素子等広い利用が期待できるものである。Now that polycrystalline silicon is being widely applied to various devices, the present invention provides an inexpensive manufacturing method, and its range of use is extremely wide. That is, it can be expected to be widely used in integrated circuits, thin film batteries, optical sensors, and isostatic elements for liquid crystal display devices.
第１図は本発明の製造に用いる装置である。
１・・・・・・キャリアガスのボンベ
２・・・・・ドーピングガスのボンベ
６ａ〜３ｂ・・・・・・調圧器
４σ〜４ｂ・・・・マスフローコントローラ５ａ〜５Ｇ
・・・・・・ガス配管
６・・・・・ウォーターバス
７・・・・・水
８・・・・・・シ男コンのハロゲン化物９・・・・・・
ガス吹出し口
１０・・・・・・加熱ヒータ
１１・・・・・ボート
１２・・・・・・基板
１６・・・・・・炉芯管
１４・・・・・・メカニカルブースターポンプ１５・・
・・・・油回転ポンプ
１６α〜１６ｂ・・・・・・バルブ
以 上
出願人 株式会社諏訪精工舎
代理人 弁理士 最上 務FIG. 1 shows an apparatus used for manufacturing the present invention. 1...Carrier gas cylinder 2...Doping gas cylinder 6a-3b...Pressure regulator 4σ-4b...Mass flow controller 5a-5G
・・・・・・Gas piping 6・・・・・・Water bath 7・・・・・・Water 8・・・・・・Halide of the man's condom 9・・・・・・
Gas outlet 10... Heater 11... Boat 12... Substrate 16... Furnace core tube 14... Mechanical booster pump 15...
...Oil rotary pumps 16α to 16b...Valves and above Applicant Suwa Seikosha Co., Ltd. Agent Patent attorney Tsutomu Mogami
Claims (1)
の製造方法において、シリコンのハロゲン化物、すなわ
ち、Ｓ ｓ ＣＱ４ 、 Ｓ ｓ Ｂ ｒ４ 、あるい
はＳ＜工。から蒸発する気体をキャリアガスによって、
適当に温度制御された基板近傍に連び気相反応によって
、膜の成長を行なうことを特徴とする多結晶シリコン膜
の製造方法。 ２）気相反応を行なわせる為の手段として、プラズマ、
熱、あるいは光のエネルギーを用いたことを特徴とする
特許請求の範囲第１項記載のシリコン膜の製造方法・ ３）キャリアガスとして水素又はアルゴンを用いたこと
を特徴とする特許請求の範囲第１項記載の多結晶シリコ
ン膜の製造方法。[Claims] 1) A method for producing a polycrystalline silicon film by vapor phase reaction of a silicon compound, in which a silicon halide, ie, S s CQ4 , S s Br4 , or S <<> is used. The gas evaporated from the carrier gas is
A method for producing a polycrystalline silicon film, characterized in that the film is grown by a gas phase reaction in the vicinity of an appropriately temperature-controlled substrate. 2) Plasma,
3) A method for producing a silicon film according to claim 1, characterized in that heat or light energy is used; 3) Claim 1, characterized in that hydrogen or argon is used as a carrier gas. 2. The method for producing a polycrystalline silicon film according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19482383A JPS6086274A (en) | 1983-10-18 | 1983-10-18 | Preparation of polycrystalline silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19482383A JPS6086274A (en) | 1983-10-18 | 1983-10-18 | Preparation of polycrystalline silicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6086274A true JPS6086274A (en) | 1985-05-15 |
Family
ID=16330842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19482383A Pending JPS6086274A (en) | 1983-10-18 | 1983-10-18 | Preparation of polycrystalline silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6086274A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821155A (en) * | 1995-12-20 | 1998-10-13 | Mitsubishi Denki Kabushiki Kaisha | Method of growing n-type III-V semiconductor materials on a substrate using SiI4 |
| WO2006125425A1 (en) * | 2005-05-25 | 2006-11-30 | Rev Renewable Energy Ventures Ag | Method for production of silicon from silyl halides |
| US8177943B2 (en) | 2006-09-14 | 2012-05-15 | Spawnt Private S.A.R.L. | Solid polysilane mixtures |
-
1983
- 1983-10-18 JP JP19482383A patent/JPS6086274A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821155A (en) * | 1995-12-20 | 1998-10-13 | Mitsubishi Denki Kabushiki Kaisha | Method of growing n-type III-V semiconductor materials on a substrate using SiI4 |
| WO2006125425A1 (en) * | 2005-05-25 | 2006-11-30 | Rev Renewable Energy Ventures Ag | Method for production of silicon from silyl halides |
| JP4832511B2 (en) * | 2005-05-25 | 2011-12-07 | スポーント プライヴェイト エスアーアールエル | Process for producing silicon from halogenated silanes |
| US8147656B2 (en) | 2005-05-25 | 2012-04-03 | Spawnt Private S.A.R.L. | Method for the production of silicon from silyl halides |
| US9382122B2 (en) | 2005-05-25 | 2016-07-05 | Spawnt Private S.À.R.L. | Method for the production of silicon from silyl halides |
| US8177943B2 (en) | 2006-09-14 | 2012-05-15 | Spawnt Private S.A.R.L. | Solid polysilane mixtures |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4421592A (en) | Plasma enhanced deposition of semiconductors | |
| US4501769A (en) | Method for selective deposition of layer structures consisting of silicides of HMP metals on silicon substrates and products so-formed | |
| JPS6364993A (en) | Method for growing elemental semiconductor single crystal thin film | |
| JPS6134928A (en) | Growing process of element semiconductor single crystal thin film | |
| US3484311A (en) | Silicon deposition process | |
| JPH0650730B2 (en) | Method for manufacturing semiconductor thin film | |
| US4910163A (en) | Method for low temperature growth of silicon epitaxial layers using chemical vapor deposition system | |
| JPS6086274A (en) | Preparation of polycrystalline silicon film | |
| US3653991A (en) | Method of producing epitactic growth layers of semiconductor material for electrical components | |
| JPS6089575A (en) | Production of silicon nitride film | |
| JPH01252776A (en) | Formation of aluminum film by vapor growth | |
| US3152932A (en) | Reduction in situ of a dipolar molecular gas adhering to a substrate | |
| JPH10189582A (en) | Manufacture of silicon insulating film | |
| JPS58135633A (en) | Epitaxial growth of silicon | |
| US4609424A (en) | Plasma enhanced deposition of semiconductors | |
| JPS6140034B2 (en) | ||
| JPS61114519A (en) | Vapor growth equipment | |
| JPS6278192A (en) | Production of n-type single crystal thin film | |
| JPS6278191A (en) | Production of single crystal thin film | |
| JPS5493357A (en) | Growing method of polycrystal silicon | |
| KR0151821B1 (en) | Process for chemical vapor deposition of silicon with suppressed particle formation | |
| JPH04324628A (en) | Manufacture of silicon thin film | |
| KR100368318B1 (en) | Method of processing for selective epitaxial growth in semiconductor device | |
| JPH0368131A (en) | Organic metal vapor growth method | |
| JPH04324627A (en) | Manufacture of silicon thin film |