JPS5951556A - Encasing vessel for semiconductor device - Google Patents

Encasing vessel for semiconductor device

Info

Publication number
JPS5951556A
JPS5951556A JP16256282A JP16256282A JPS5951556A JP S5951556 A JPS5951556 A JP S5951556A JP 16256282 A JP16256282 A JP 16256282A JP 16256282 A JP16256282 A JP 16256282A JP S5951556 A JPS5951556 A JP S5951556A
Authority
JP
Japan
Prior art keywords
thermocouple
storage container
temperature
metal
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16256282A
Other languages
Japanese (ja)
Inventor
Isamu Kitahiro
北広 勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16256282A priority Critical patent/JPS5951556A/en
Publication of JPS5951556A publication Critical patent/JPS5951556A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To measure a temperature rise of the encasing vessel on inspection or after mounting easily by setting up a heat-electricity converting element approximately just under a region on which a semiconductor element is placed. CONSTITUTION:The heat-electricity converting element is set up approximately just under the semiconductor-element placing section of the encasing vessel. For example, structure in which a thermocouple is incorporated in a ceramic-package 1 is formed, the thermocouple is formed by a metal A7 and a metal B8 at that time, and a temperature change of potential difference due to the contact of the metals of a different kind of A and B can be detected through leads 4, 4'. The metals 7, 8 are printed and formed previously before the package is manufactured. Accordingly, since the thermocouple for measuring the temperature rise or a resistor is unified with the encasing vessel, a temperature can be measured easily on inspection, and heat can be controlled easily.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体収納容器に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a semiconductor storage container.

従来例の構成とその問題点 半導体装置は近年、ますます高密度・窩集債化して来て
おり、その機能も複雑化している。
Conventional configurations and their problems In recent years, semiconductor devices have become increasingly dense and complex, and their functions have also become more complex.

また、トランジスタ当りの消費電力は減少しているもの
の、葛密度化の進展が著るしく、ペレ・ソト当りでは逆
に増大の傾向にある。今後さらにその傾向は大きくなる
ものと思われ、熱管理が重要1課順となってくる。
Furthermore, although the power consumption per transistor is decreasing, there is a remarkable progress in increasing the density of transistors, and on the contrary, the power consumption per transistor tends to increase. This trend is expected to grow even more in the future, with heat management becoming the most important subject.

以下に従来の収納容器についてセラミック・パッケージ
の例で説明する。第1図において1はセラミックパッケ
ージ本体、2は半導体素子、3は金属細線、4はリード
、6はキャンプ、6は」t、1IJ−桐である。このよ
うなセラミック・パッケージは例えば第1図中点線で示
した如く薄い+ラミックシート上に所定の配線を印刷し
たのち重さね合わせて焼成し作られる。このようなパッ
ケージではチップ温度の上シ1..パッケージ温度の上
?1が測定できない。さらに、プリント基板等に実装し
た場合は温度上昇が測定できない。
A conventional storage container will be explained below using an example of a ceramic package. In FIG. 1, 1 is a ceramic package body, 2 is a semiconductor element, 3 is a thin metal wire, 4 is a lead, 6 is a camp, 6 is "t, 1IJ-paulownia." Such a ceramic package is produced, for example, by printing predetermined wiring on thin lamic sheets as shown by the dotted line in FIG. 1, and then stacking them together and firing them. In such a package, the temperature of the chip increases.1. .. Above package temperature? 1 cannot be measured. Furthermore, when mounted on a printed circuit board or the like, temperature rise cannot be measured.

発明の「1的 本発明は上記従来例の問題点に鑑み、検査時又実装後の
収納容器の温度上昇を容易に測定しうる収納容器をυ1
1供することを目的とする○発明の構成 本発明は半導体素子載置部の略直下に熱−電気変換素子
を形成した構造を持つ収納容器により温度管理を容易な
らしめたものである。
In view of the problems of the prior art described above, the present invention provides a storage container υ1 that can easily measure the temperature rise of the storage container during inspection or after mounting.
1. Structure of the Invention The present invention facilitates temperature control using a storage container having a structure in which a thermo-electrical conversion element is formed substantially directly below a semiconductor element mounting portion.

実施例の説明 第2図は本発明の一実施例としてセラミック・パッケー
ジに熱電灯を内蔵した構造を示し、従来例と共通の構成
安素の番号は第1図と同じにしである。4.4′はリー
ド、了は金属A、8は金属Bで熱電対を形成し、AとB
なる異種金属の接触による電位差の温度変化を検出しよ
うとするものであり、金属7をリード4′に金属8をリ
ード4に接続しておけば外部からの測定を容易に行うこ
とができる。この場合、金属7,8は予かじめ、パッケ
ージ製造前に印刷形成しておけば良い。
DESCRIPTION OF THE EMBODIMENTS FIG. 2 shows a structure in which a thermoelectric lamp is built into a ceramic package as an embodiment of the present invention, and the numbers of constituent ammonium elements common to the conventional example are the same as in FIG. 1. 4. Form a thermocouple with 4' as lead, metal A as the end, and metal B as 8, and connect A and B.
The purpose is to detect the temperature change in potential difference due to contact between different metals, and by connecting the metal 7 to the lead 4' and the metal 8 to the lead 4, external measurement can be easily performed. In this case, the metals 7 and 8 may be printed in advance before manufacturing the package.

第2図は無電対の例で説明したが、熱電対のがわりに所
定の温度係数を有する抵抗体を印刷し、11(抗性の温
度依存性を検出しても良い。また、セラミック・パッケ
ージではなく、厚嘆・薄膜混成集積回路基板でも同様の
構造とすることはできる。
Although Fig. 2 has been explained using an example of a non-electrocouple, it is also possible to print a resistor having a predetermined temperature coefficient instead of a thermocouple and detect the temperature dependence of resistance. Instead, a similar structure can be achieved with a thick/thin film hybrid integrated circuit board.

発明の効果 本発明によれば、温度上昇測定用の無電対又は抵抗体が
収納容器と一体化されているため、検査時に容易に温度
測定ができ、熱管理ができるため今後の超LSI用の収
納容器として回連のもので、ある。
Effects of the Invention According to the present invention, since the electroless couple or resistor for measuring temperature rise is integrated with the storage container, temperature can be easily measured during inspection and heat management can be performed, which will be useful for future VLSIs. It is a reusable container used as a storage container.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のセラミックパッケージ概略断面図、第2
図は本発明の一実施例のセラミックパッケージの概1洛
1断面図である。 1 ・・・・パッケージ本体、4−・・・リード、5・
・・・・・キャップ、6・・・・・・封+h ’jA、
7・・・・・金属A、s・・・・・金属B。
Figure 1 is a schematic cross-sectional view of a conventional ceramic package;
The figure is a roughly sectional view of a ceramic package according to an embodiment of the present invention. 1...Package body, 4-...Lead, 5-...
...Cap, 6...Seal+h'jA,
7...Metal A, s...Metal B.

Claims (4)

【特許請求の範囲】[Claims] (1)半導体素子を載置する領域の略直下に熱−電気変
換素子を取付けたことを特徴とする半導体収納容器。
(1) A semiconductor storage container characterized in that a thermo-electrical conversion element is attached substantially directly below an area in which a semiconductor element is placed.
(2)  熱−電気変換素子が熱電対であることを特徴
とする特許請求の範囲第1項記載の半導体収納容器。
(2) The semiconductor storage container according to claim 1, wherein the thermo-electric conversion element is a thermocouple.
(3)熱−電気変換素子が所、定の温度係数を有する電
気抵抗体であることを特徴とする特許請求の範囲第1項
記載の半導体収納容器。
(3) The semiconductor storage container according to claim 1, wherein the thermo-electric conversion element is an electric resistor having a predetermined temperature coefficient.
(4)  多層セラミック基板の中間層に熱−電気変換
素子を埋設したことを特徴とする特許請求の範囲第1項
記載の半導体収納容器。
(4) The semiconductor storage container according to claim 1, characterized in that a thermo-electric conversion element is embedded in the intermediate layer of the multilayer ceramic substrate.
JP16256282A 1982-09-17 1982-09-17 Encasing vessel for semiconductor device Pending JPS5951556A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16256282A JPS5951556A (en) 1982-09-17 1982-09-17 Encasing vessel for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16256282A JPS5951556A (en) 1982-09-17 1982-09-17 Encasing vessel for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5951556A true JPS5951556A (en) 1984-03-26

Family

ID=15756943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16256282A Pending JPS5951556A (en) 1982-09-17 1982-09-17 Encasing vessel for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5951556A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2664745A1 (en) * 1990-07-12 1992-01-17 Landis & Gyr Betriebs Ag Thermoelectric converter and method for manufacturing it
JP2014011385A (en) * 2012-07-02 2014-01-20 Nec Access Technica Ltd Electronic device, electronic apparatus, and manufacturing method of electronic device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2664745A1 (en) * 1990-07-12 1992-01-17 Landis & Gyr Betriebs Ag Thermoelectric converter and method for manufacturing it
JP2014011385A (en) * 2012-07-02 2014-01-20 Nec Access Technica Ltd Electronic device, electronic apparatus, and manufacturing method of electronic device

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