JPS5950451U - Gate turn-off thyristor with amplification gate structure - Google Patents

Gate turn-off thyristor with amplification gate structure

Info

Publication number
JPS5950451U
JPS5950451U JP14664782U JP14664782U JPS5950451U JP S5950451 U JPS5950451 U JP S5950451U JP 14664782 U JP14664782 U JP 14664782U JP 14664782 U JP14664782 U JP 14664782U JP S5950451 U JPS5950451 U JP S5950451U
Authority
JP
Japan
Prior art keywords
gate
amplification
thyristor
turn
amplification gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14664782U
Other languages
Japanese (ja)
Inventor
林　泰英
康夫 片岡
Original Assignee
株式会社明電舎
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社明電舎 filed Critical 株式会社明電舎
Priority to JP14664782U priority Critical patent/JPS5950451U/en
Publication of JPS5950451U publication Critical patent/JPS5950451U/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図、第２図及び第３図はオフゲートドライブ方法を
説明するための回路例を示す図、第４図は本考案の一実
施例を示す図である。 ＡＣ・・・増幅ゲート部、Ｇｌ、Ｇ２．Ｇ３・・・ゲー
ト電極、Ｋ・・・カソード電極、Ａ・・・アノード電極
、１・・・ボンディング線、２・・・ケース、３・・・
第１のリード線、４・・・リング状電極、５・・・ホン
ディング線、６・・・第２のリード線、７・・・カソー
ド電極板、８・・・カソード補助リード線。 Ｉ　　　　　　　　　　　ロ１１７門 ／′Ｎ・　　１ ／　　　　　　　Ｉ １1, 2, and 3 are diagrams showing circuit examples for explaining the off-gate drive method, and FIG. 4 is a diagram showing an embodiment of the present invention. AC...Amplification gate section, Gl, G2. G3... Gate electrode, K... Cathode electrode, A... Anode electrode, 1... Bonding wire, 2... Case, 3...
1st lead wire, 4... ring-shaped electrode, 5... honding wire, 6... second lead wire, 7... cathode electrode plate, 8... cathode auxiliary lead wire. I Ro 117 gates/'N・1/I 1

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] Ｐｌ、　Ｎ、、　Ｐ２．　Ｎ２層からなる主ＧＴＯ部と
同一ウェハ上にＰｌ、　Ｎ、、　Ｐ２．　Ｎ３層からな
る増幅ゲー、ト部を設け、この増幅ゲート部の主電流を
主ＧＴＯ部のオンゲート電流とする増幅ゲート構造のゲ
ートターンオフサイリスタにおいて、上記増幅ゲート部
のゲート電極からケース外に引出した第１のリード線と
、上記主ＧＴＯ部のゲート電極又は上記増幅ゲート部の
オフ専用ゲート電極からケース外に引出した第２のリー
ド線とを備えたことを特徴とする増幅ゲート構造のゲー
トターンオフサイリスク。Pl, N,, P2. Pl, N,, P2. In a gate turn-off thyristor with an amplification gate structure in which an amplification gate made of an N3 layer and a GTO part are provided and the main current of this amplification gate part is used as the on-gate current of the main GTO part, the gate electrode of the amplification gate part is drawn out from the case. Gate turn-off of an amplification gate structure characterized by comprising a first lead wire and a second lead wire drawn out of the case from the gate electrode of the main GTO section or the off-only gate electrode of the amplification gate section. Cyrisk.
JP14664782U 1982-09-27 1982-09-27 Gate turn-off thyristor with amplification gate structure Pending JPS5950451U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14664782U JPS5950451U (en) 1982-09-27 1982-09-27 Gate turn-off thyristor with amplification gate structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14664782U JPS5950451U (en) 1982-09-27 1982-09-27 Gate turn-off thyristor with amplification gate structure

Publications (1)

Publication Number Publication Date
JPS5950451U true JPS5950451U (en) 1984-04-03

Family

ID=30326363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14664782U Pending JPS5950451U (en) 1982-09-27 1982-09-27 Gate turn-off thyristor with amplification gate structure

Country Status (1)

Country Link
JP (1) JPS5950451U (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50152664A (en) * 1974-05-27 1975-12-08
JPS5336999A (en) * 1976-09-16 1978-04-05 Rheinmetall Gmbh Propulsive powder explosive
JPS556304A (en) * 1978-06-28 1980-01-17 Fuji Xerox Co Ltd Thin sheet material stripper
JPS5520228B2 (en) * 1973-12-21 1980-05-31

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5520228B2 (en) * 1973-12-21 1980-05-31
JPS50152664A (en) * 1974-05-27 1975-12-08
JPS5336999A (en) * 1976-09-16 1978-04-05 Rheinmetall Gmbh Propulsive powder explosive
JPS556304A (en) * 1978-06-28 1980-01-17 Fuji Xerox Co Ltd Thin sheet material stripper

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