JPS6073254U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS6073254U JPS6073254U JP16588383U JP16588383U JPS6073254U JP S6073254 U JPS6073254 U JP S6073254U JP 16588383 U JP16588383 U JP 16588383U JP 16588383 U JP16588383 U JP 16588383U JP S6073254 U JPS6073254 U JP S6073254U
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- wafer
- diode
- electrode post
- flat package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は公知例の半導体装置を示す縦断面説明図、第２
図は本考案の一実施例の要部構成を示す縦断面説明図で
ある。 −
１２−・・・・・サイリスタペレット、１２ａ・・・・
・・サイリスタウェファ、１２ｂ・・・・・・支持電極
、１３−−−−−−ダイオードペレット、１３ａ・・・
・・・ダイオードウェファ、１３ｂ・・・・・・支持電
極、１７．１７’・・・・・・導電板、１９・・・・・
・絶縁板、２０．２０’・・・・・・電極ポスト、２１
′・・・・・・補助電極ポスト。FIG. 1 is a vertical cross-sectional explanatory diagram showing a known example of a semiconductor device, and FIG.
The figure is an explanatory longitudinal cross-sectional view showing the main part configuration of an embodiment of the present invention. - 12-... Thyristor pellet, 12a...
...Thyristor wafer, 12b...Support electrode, 13---Diode pellet, 13a...
...Diode wafer, 13b... Support electrode, 17.17'... Conductive plate, 19...
・Insulating plate, 20.20'... Electrode post, 21
'...Auxiliary electrode post.
Claims (1)
リスタウェファとダイオードウェファを固着させ該サイ
リスタウェファとダイオードウェファとの逆並列接続構
成をなす半導体装置において、サイリスタペレットのサ
イリスタウェファに着設された第１の支持電極とダイオ
ードペレットのダイオードウェファに着設された第２の
支持電極の間に第１の導電体を介在させ、かつ該第１の
導電体を平形パッケージのアノード電極ポストの内側へ
導き固着させるとともに、平形パッケージのカソード電
極ポストと該カソード電極ポス〜トの内側に具設された
補助カソード電極ポストとの間に第２の導電体を介在さ
せ、かつ該第１の導電体を前記ダイオードペレットのア
ノード電極に導き固着させ、前記第１の導電体と第２の
導電体の間に絶縁体を挿設させるようにしたことを特徴
とする半導体装置。In a semiconductor device in which a thyristor wafer and a diode wafer are fixed by applying pressure between an anode and a cathode of a flat package, and the thyristor wafer and the diode wafer are connected in antiparallel, a first A first conductor is interposed between the support electrode and a second support electrode attached to the diode wafer of the diode pellet, and the first conductor is guided and fixed to the inside of the anode electrode post of the flat package. At the same time, a second conductor is interposed between the cathode electrode post of the flat package and an auxiliary cathode electrode post provided inside the cathode electrode post, and the first conductor is connected to the diode pellet. A semiconductor device, characterized in that an insulator is inserted between the first conductor and the second conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16588383U JPS6073254U (en) | 1983-10-26 | 1983-10-26 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16588383U JPS6073254U (en) | 1983-10-26 | 1983-10-26 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6073254U true JPS6073254U (en) | 1985-05-23 |
Family
ID=30363302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16588383U Pending JPS6073254U (en) | 1983-10-26 | 1983-10-26 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6073254U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55148460A (en) * | 1979-05-08 | 1980-11-19 | Toyo Electric Mfg Co Ltd | Semiconcutor device |
-
1983
- 1983-10-26 JP JP16588383U patent/JPS6073254U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55148460A (en) * | 1979-05-08 | 1980-11-19 | Toyo Electric Mfg Co Ltd | Semiconcutor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6073254U (en) | semiconductor equipment | |
| JPS5875490U (en) | GTO protection circuit | |
| JPS5816936U (en) | stationary switch | |
| JPS599643U (en) | Gate device for gate turn-off thyristor | |
| JPS6232555U (en) | ||
| JPS5927477U (en) | Gate turn-off thyristor breaking ability selection circuit | |
| JPS59152750U (en) | semiconductor equipment | |
| JPS5931236U (en) | nonpolar electrolytic capacitor | |
| JPS5989551U (en) | Semiconductor integrated circuit device | |
| JPS593558U (en) | GTO element protection device | |
| JPS5875491U (en) | Self-extinguishing thyristor snubber circuit device | |
| JPS58196844U (en) | semiconductor equipment | |
| JPS58103585U (en) | Unit structure of gate turn-off thyristor | |
| JPS58105788U (en) | Connection structure of gate turn-off thyristor and snubber circuit | |
| JPS5927636U (en) | Gate turn-off thyristor snubber circuit | |
| JPS5914339U (en) | thyristor device | |
| JPS588961U (en) | thyristor | |
| JPS602852U (en) | semiconductor thyristor device | |
| JPS58182438U (en) | semiconductor equipment | |
| JPS592154U (en) | semiconductor equipment | |
| JPS5965540U (en) | Inverter device | |
| JPS5881962U (en) | Gate electrode structure of semiconductor device | |
| JPS59121853U (en) | semiconductor equipment | |
| JPS5965557U (en) | Gate turn-off thyristor | |
| JPS5872851U (en) | semiconductor equipment |