JPS58103585U - Unit structure of gate turn-off thyristor - Google Patents
Unit structure of gate turn-off thyristorInfo
- Publication number
- JPS58103585U JPS58103585U JP75082U JP75082U JPS58103585U JP S58103585 U JPS58103585 U JP S58103585U JP 75082 U JP75082 U JP 75082U JP 75082 U JP75082 U JP 75082U JP S58103585 U JPS58103585 U JP S58103585U
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- circuit
- gate turn
- gate
- cooling fins
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Thyristors (AREA)
- Power Conversion In General (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図はGTOサイリスタのターンオフ時波形図、第2
図はGTOサイリスタのスナバ回路図、第3図はGTO
サイリスタにスナバ回路と分流回路を設けた回路図、第
4図は本考案の一実施例を示すユニット構造図である。
1・・・・・−GTOサイリスク、5・・・・・・分流
用トランジスタ、6・・・・・・ゲート回路、7・・・
・・・逆バイアス防止用ダイオード、8.9・・・・・
・冷却フィン、13・・・・・・絶縁板、16・・・・
・・シールドボックス。Figure 1 is a waveform diagram at turn-off of the GTO thyristor, Figure 2
The figure is the snubber circuit diagram of the GTO thyristor, and Figure 3 is the GTO thyristor snubber circuit diagram.
FIG. 4 is a circuit diagram in which a thyristor is provided with a snubber circuit and a shunt circuit, and is a unit structural diagram showing an embodiment of the present invention. 1...-GTO Sirisk, 5...... Shunt transistor, 6... Gate circuit, 7...
...Reverse bias prevention diode, 8.9...
・Cooling fin, 13... Insulation plate, 16...
...Shield box.
Claims (1)
ジスタ回路を並列接続する組立構造において、平型のゲ
ートターンオフサイリスタのアノードとカソード両面に
互いに逆方向に偏心して該サイリスタを一対の冷却フィ
ンで挾持し、上記一対の冷却フィンが互いに対向しない
部分め一方に分流トランジスタ回路素子を取付け、他方
にスナバ回路素子を取付け、上記各回路素子は上記冷却
フィンを一部の接続導体として上記サイリスタのアノー
ド又はカソードとの接続回路を構成し、上記一対の冷却
フィンの一方に隙間を持ってゲート回路収納のシールド
ボックスを並設し、上記サイリスク及びトランジスタと
シールドボックス内ゲーート回路とをリード線接続する
構造を特徴とするゲートターンオフサイリスタのユニッ
ト構造。In an assembly structure in which a snubber circuit and a shunt transistor circuit are connected in parallel to a gate turn-off thyristor, the anode and cathode of a flat gate turn-off thyristor are eccentrically arranged in opposite directions to each other, and the thyristor is sandwiched between a pair of cooling fins. A shunt transistor circuit element is attached to one side of the portion where the cooling fins do not face each other, and a snubber circuit element is attached to the other side, and each of the circuit elements is connected to the anode or cathode of the thyristor using the cooling fin as a part of the connection conductor. A gate turn-off characterized by a structure in which a shield box for housing the gate circuit is arranged side by side with a gap between one of the pair of cooling fins, and a lead wire is connected between the cyrisk and the transistor and the gate circuit in the shield box. Thyristor unit structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP75082U JPS58103585U (en) | 1982-01-07 | 1982-01-07 | Unit structure of gate turn-off thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP75082U JPS58103585U (en) | 1982-01-07 | 1982-01-07 | Unit structure of gate turn-off thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58103585U true JPS58103585U (en) | 1983-07-14 |
JPH0336220Y2 JPH0336220Y2 (en) | 1991-07-31 |
Family
ID=30013809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP75082U Granted JPS58103585U (en) | 1982-01-07 | 1982-01-07 | Unit structure of gate turn-off thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58103585U (en) |
-
1982
- 1982-01-07 JP JP75082U patent/JPS58103585U/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0336220Y2 (en) | 1991-07-31 |
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