JPS5948767A - Transfer mask - Google Patents
Transfer maskInfo
- Publication number
- JPS5948767A JPS5948767A JP57157434A JP15743482A JPS5948767A JP S5948767 A JPS5948767 A JP S5948767A JP 57157434 A JP57157434 A JP 57157434A JP 15743482 A JP15743482 A JP 15743482A JP S5948767 A JPS5948767 A JP S5948767A
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- conductive
- transfer
- film portion
- wires
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000007689 inspection Methods 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 15
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 14
- 239000011651 chromium Substances 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、#導体装置製造工程においでパターンを転
写するための転写用マスクに関し、さらに詳細にはマス
タマスクを製作するためのレチクル等に多用されるガラ
スマスクに関するものである。[Detailed Description of the Invention] [Technical Field of the Invention] This invention relates to a transfer mask for transferring a pattern in the # conductor device manufacturing process, and more specifically, it is widely used for reticles and the like for producing a master mask. It is related to the glass mask that is used.
従来、集積回路等半導体製造に用いられるホトマスクは
、通常5倍若しくは10倍画像のレチクルf スfツバ
によって縮小転写することによりマスクマスクを製作し
1、このマスタマスクから転写したワークコピーマスク
が使用される。このレチクルなどの転写マスクは透明ガ
ラス板上に遮光膜ツバターンが形成されたものであるが
、従来のガラスマスクには以下の如き問題点があり、こ
れを解決する必要があった。Conventionally, photomasks used in the manufacture of semiconductors such as integrated circuits are usually produced by reducing and transferring a 5x or 10x image using a reticle (f) and brim (1), and a work copy mask transferred from this master mask is used. be done. A transfer mask such as a reticle has a light shielding film flange formed on a transparent glass plate, but conventional glass masks have the following problems, which need to be solved.
従来レチクルとし、で用いられていたガラスマスり(ク
ロムマスク)は、第1図に示すごとく、ガラス製の基板
の外周部に沿って設けられた第一のクロム膜部分1を有
するとともに、第一のクロム膜部分1の内側にこれと分
離して設けられた少なくとも1個所以上の転写用クロム
膜部分2すなわチハターンを有している。この従来のガ
ラスマスクにおいては、その製作中もしくは取扱い中に
、外周部の第一のクロム膜部分1は装置等を介して接地
されるが、転写用クロム膜部分2は絶縁されているた2
Δ、該転写用クロム膜部分2 K電荷が帯電しやすい構
造となっていた。従ってガラスマスクの製作中、も]7
〈は再使用のためガラスマスク洗浄中等において、転写
用クロム膜部分2には電荷が帯電し、且つこの帯%によ
って第一のクロス・膜部分1と転写用1クロム)膜部分
2との間に生じた電位差が両クロム膜間の絶縁耐力以−
4−1//:なると放電が起こり、その結果転写用クロ
ム膜部分が破壊されてマスクパターンVζ欠陥が生ずる
ということがあった。A glass mask (chrome mask) conventionally used as a reticle has a first chrome film portion 1 provided along the outer periphery of a glass substrate, as shown in FIG. The chromium film part 1 has at least one transfer chrome film part 2, that is, a chihattern, which is provided inside the chromium film part 1 and separated therefrom. In this conventional glass mask, during manufacture or handling, the first chromium film portion 1 on the outer periphery is grounded via a device or the like, but the transfer chrome film portion 2 is insulated and
Δ, the transfer chromium film portion 2 had a structure in which K charges were easily charged. Therefore, during the production of glass masks]7
〈During glass mask cleaning for reuse, etc., the transfer chromium film portion 2 is charged with an electric charge, and due to this band %, the gap between the first cross film portion 1 and the transfer chromium film portion 2 is The potential difference generated is greater than the dielectric strength between both chromium films.
4-1//: Then, a discharge occurs, and as a result, the transfer chromium film portion is destroyed and a mask pattern Vζ defect occurs.
一方、この問題点とは別(F、従来のガラスマスクに丸
・いては、顕微鏡検査を実施したhに、ガラスマスク上
の欠陥部分の存在位置の明確化あるい(は該欠陥部分の
迅速な発見などがり下のごとき理由によって困難であり
、従って顕微鏡検査がやり。On the other hand, apart from this problem (F), when conventional glass masks are inspected using a microscope, it is necessary to clarify the location of defective parts on the glass mask or (to quickly remove the defective parts). This is difficult to discover due to various reasons, such as microscopic examination.
にくく、能率が悪いという問題点があった。すなわち、
ill来のガラスマスクでは、顕微鏡検査の際に走査位
置の基糸となる座標軸等がガラスマスク上ヒに全ぐなか
ったので、(a)ガラスマスク上のパターンが疎である
場合、(b)該パターンを顕微蒔で見た時に大きな暗部
とじて観察されてしまう場合、(C)ガラスマスク上の
パターンが連続する繰返し・ζターンである場合等にお
いて(ケ、欠陥部分の存在6′I置の正1面な指摘や顕
微鏡検査の際の走査位置の確認などができな力・った。The problem was that it was difficult and inefficient. That is,
With conventional glass masks, the coordinate axes that serve as the base line for scanning positions during microscopic inspection were not completely aligned on the glass mask, so (a) if the pattern on the glass mask was sparse, (b) If the pattern is observed as a large dark area when viewed under a microscope, (C) If the pattern on the glass mask is a continuous repeating/ζ turn, etc. It was impossible to directly point out the problem or confirm the scanning position during microscopic examination.
この発明の目的は、前記の如き従来のツノラスマスク(
・りみられるパターンの静電破壊が生じる紐それのない
改善さn−た転写用マスクを提供することにあり、また
別の本発明の目的は、上記静電破壊の防市とともに顕微
鏡検査を極めて正確にかつ能率よく行うことのてきる転
写用マスク手・提供すること【(ある。The purpose of this invention is to use the conventional horn mask (
・Another object of the present invention is to provide an improved transfer mask that does not cause electrostatic damage to the pattern that is visible.Another object of the present invention is to prevent the electrostatic damage mentioned above and to improve microscopic inspection. Providing a transfer mask that can be performed accurately and efficiently.
コ(71) 発Q’]は、(1)静電気放電によるパタ
ーンの破壊を生ビさせないため1に、パターンとその夕
)側の非転写導電)1ゾ部分とを導電線を介して電気的
に短絡したこと、(ii)該導電線をパターンの座標基
準として顕微鏡検査の際の走査基糸もしくは走査座標軸
に利用したこと、及び(iii)該導電線をレチクルの
ガラス基板上に設けても、レテクノ」のパターン(・1
縮小転写されるため、該導電線の線幅を転写し1(Iな
い値にすることによって、転7(Jさね、たパターンに
は該導電線が現れぬようにしたこと等を特徴とするもの
である。(71) In order to prevent the pattern from being destroyed by electrostatic discharge, (1) electrically connect the pattern and the non-transferred conductive part (1) on the side (1) through a conductive wire. (ii) the conductive wire was used as a scanning base line or scanning coordinate axis during microscopic inspection as a pattern coordinate reference, and (iii) the conductive wire was provided on the glass substrate of the reticle. , Retechno” pattern (・1
Since the conductive line is reduced and transferred, the line width of the conductive line is transferred and set to a value of 1 (I), so that the conductive line does not appear in the 7 (J) pattern. It is something to do.
この発明の転写用マスクは、特に縮小転写されるレチク
ルとして好適であるが、短絡させる導電線の設は方によ
ってレチクルとしてばかりでなく、他の転写用マスクと
して利用することができる。The transfer mask of the present invention is particularly suitable as a reticle to be reduced and transferred, but it can be used not only as a reticle but also as other transfer masks depending on the arrangement of the short-circuited conductive wires.
以下に第2図及び第6図を参照して本発明の実施例fつ
いて説明する。な尤・、第2図及び第61シ1において
第1〆−と同一の符号で表示さ層、ている部分(は、第
1図と同一部分を示す。Embodiment f of the present invention will be described below with reference to FIGS. 2 and 6. In addition, in FIG. 2 and 61C1, layers and portions indicated by the same reference numerals as those in the first section (indicate the same portions as in FIG. 1).
第2図に示す第1実施例では、マスク基板のり1周部の
第一の導電膜部分1とその内(illの転写用クロム膜
部分2とが第一の導電膜部分1の内側の領呟((設けた
導電線3によって互いにm気的【(接続されるとともに
、該導電線6【(沿って配列さ17″したすへての転写
用導電膜部分2も該導電線3によって万(C電気的に接
続されている。従って、このような構成f、Iれけ、各
転写用導電膜部分2に電荷が発生しても′[:電荷は導
電線6を通じて百1.−のび1電膜部分1に移動するた
め、各転写用導電膜部分2には電荷の蓄積が起こらず、
その結果転写用クロ膜部分の放電破壊を未然に防市する
ことができる。In the first embodiment shown in FIG. 2, the first conductive film portion 1 on one circumference of the mask substrate and the chromium film portion 2 for transfer (ill) are arranged in the inner area of the first conductive film portion 1. They are electrically connected to each other by the conductive wires 3 provided, and all the transfer conductive film portions 2 arranged 17" along the conductive wires 3 are also electrically connected to each other by the conductive wires 3. (C is electrically connected. Therefore, even if an electric charge is generated in each of the transfer conductive film portions 2 in such a configuration f, I leakage, the electric charge will spread through the conductive wire 6. 1 conductive film portion 1, no charge is accumulated in each transfer conductive film portion 2,
As a result, it is possible to prevent electrical discharge damage to the transfer chrome film portion.
f:た各導電線6を図示のごとく各転写用導電膜部分2
の列毎に互に平行に設けることによって各導電線6を顕
gl鏡検査の際の走査P1≦標クク11とり、てオリ用
することができるので転写用導電膜部分2に牛した欠陥
の存在位置を座標値とj〜で正確り、/′c検出するこ
とができるとともに、顕微鏡の検査も能率よく行うこと
ができる。f: Each conductive wire 6 is connected to each transfer conductive film portion 2 as shown in the figure.
By providing each conductive wire 6 in parallel to each other in each row, each conductive wire 6 can be used for scanning P1 ≦ mark 11 during microscopic inspection and can be used as a guide, so that defects on the conductive film portion 2 for transfer can be avoided. It is possible to accurately detect the location of the object using the coordinate values and j~, and also to perform microscopic inspection efficiently.
導電線3の線幅は該導電線が転写されないような値に選
定さ九でおり、例え1寸この10:1の縮小比のステッ
パに用いるレチクルと1−で使用する」2ツ合、該導電
線の線幅が2μm以下であることが望゛ましい。すなわ
ちレチクルの導電線の線幅が2 /1771す、下であ
れば、10:1のステッパを用いてレチクルを転写して
もマスクマスク」−に転写像は現れhいことが確認され
た。The line width of the conductive line 3 is selected to a value such that the conductive line is not transferred, and even if it is used in conjunction with a reticle used for a stepper with a reduction ratio of 10:1. It is desirable that the line width of the conductive line is 2 μm or less. That is, it was confirmed that if the line width of the conductive lines on the reticle was 2/1771 or less, no transferred image would appear on the mask even if the reticle was transferred using a 10:1 stepper.
第6図に示す第二実施例では、互に交叉する二方向の導
電M3八、3Bが第一の導電膜1の内側の領域において
網目状に設けられており、従って両導電線3A 、 3
Bを座標軸として該領域内のあらゆる場所の座標値を決
定することができるので、第一実施例の転写用マスクよ
りも更に顕微鏡゛検査を容易に旧つ止7ijji tC
行うことができる。In the second embodiment shown in FIG. 6, conductive wires 3A, 3B in two directions that intersect with each other are provided in a mesh shape in the inner region of the first conductive film 1, so that both conductive wires 3A, 3
Since the coordinate values of any location within the area can be determined using B as the coordinate axis, microscopic inspection is easier than with the transfer mask of the first embodiment.
It can be carried out.
以上のように、この発明により、は、静電破壊を起こす
ことがなく、また顕微鏡検査を能率よく行うことができ
、目、つ顕微鏡検査時にパターン損傷部分等の存在位置
を正確に数値的に探知することが可能な転写用マスクが
捉供さ力、る。As described above, with this invention, it is possible to perform microscopic inspection efficiently without causing electrostatic damage, and to accurately and numerically identify the location of pattern damage during microscopic inspection. A transfer mask that can be detected provides a capture force.
この発明の転写用マスクによれば、顕微鏡検査時におい
°て、マン、り」二のパターンが疎であったり、パター
ンが大きな暗部として観察されてしま、たり、或(″i
パターンが連続する繰返し7パターンであったI’l
1.でも、顕微鏡検査をマスクの全面にわたって確実に
走査できるとともに欠陥を確実に検出できろ。According to the transfer mask of the present invention, during microscopic examination, the pattern on the man and the rear may be sparse, the pattern may be observed as a large dark area, or the pattern may be observed as a large dark area.
I'l where the pattern was a continuous repeating pattern of 7
1. However, microscopy must be able to reliably scan the entire surface of the mask and detect defects reliably.
々尤・、実施例でCr本不発ンレチクル(C実施する場
合のみ全示したが、本発明をこれ以外の転写用マスクに
も適用しうることは当然である。In addition, in the examples, only the case where a Cr non-explosion reticle (C is implemented) is shown, but it goes without saying that the present invention can also be applied to other transfer masks.
第1図は従来の転写用マスクの概略平面口11第2図は
本発明の第一実施例の平面図、第31図は本発明の第二
実j’i!i例の平面図でパターンの転写用導電膜部分
を除いて示した図である。
1・・・第一の導電膜部分、2・・・転写用導電膜部分
、6.6八、 3B・・・導電線。FIG. 1 is a schematic plan view of a conventional transfer mask. FIG. 2 is a plan view of a first embodiment of the present invention, and FIG. 31 is a plan view of a second embodiment of the present invention. FIG. 7 is a plan view of example i, with a conductive film portion for pattern transfer removed. 1... First conductive film portion, 2... Transfer conductive film portion, 6.68, 3B... Conductive wire.
Claims (1)
って設けらitだaF−の導電膜部分と、該グーの導電
膜部分に対して分離して該基板上に設けられた少々くと
も1箇所以上の転写用導電膜部分とから構成された転写
用マスクにおいて、転写されえない線幅の導電線?該i
L−の導電膜部分と該転写用導電膜部分との間の該基板
上に設け、該導電線を介I−で該第−の導電膜部分と該
転写用導電膜部分とを電気的1c接続1またことを特徴
とする転写用マスク。 2 該導電線が平面的網目状に配列され、該導電りによ
って各転写用導電膜部分が互に電気的に接続されるとと
もに該転写用導電膜部分が該第−の導電膜部分に電気的
1(接続されている特許請求の範囲第1項記載の転写用
マスク。[Claims] 1. A transparent insulating substrate, a conductive film portion provided along the outer periphery of the substrate, and a conductive film portion separated from the conductive film portion of the goo. In a transfer mask composed of at least one transfer conductive film portion provided on a substrate, conductive lines with a line width that cannot be transferred? The i
Provided on the substrate between the L-th conductive film portion and the transfer conductive film portion, and connect the −th conductive film portion and the transfer conductive film portion with an electrical current of 1c via the conductive wire I-. A transfer mask characterized by one connection. 2. The conductive wires are arranged in a planar mesh shape, and the conductive conductive film parts are electrically connected to each other, and the conductive film part for transfer is electrically connected to the second conductive film part. 1 (transfer mask according to claim 1, which is connected).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57157434A JPS5948767A (en) | 1982-09-11 | 1982-09-11 | Transfer mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57157434A JPS5948767A (en) | 1982-09-11 | 1982-09-11 | Transfer mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5948767A true JPS5948767A (en) | 1984-03-21 |
Family
ID=15649557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57157434A Pending JPS5948767A (en) | 1982-09-11 | 1982-09-11 | Transfer mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5948767A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02968A (en) * | 1988-06-08 | 1990-01-05 | Fujitsu Ltd | Photomask |
WO2001075943A2 (en) * | 2000-04-04 | 2001-10-11 | Xilinx, Inc. | Methods and structures for protecting reticles from esd failure |
-
1982
- 1982-09-11 JP JP57157434A patent/JPS5948767A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02968A (en) * | 1988-06-08 | 1990-01-05 | Fujitsu Ltd | Photomask |
WO2001075943A2 (en) * | 2000-04-04 | 2001-10-11 | Xilinx, Inc. | Methods and structures for protecting reticles from esd failure |
WO2001075943A3 (en) * | 2000-04-04 | 2002-01-03 | Xilinx Inc | Methods and structures for protecting reticles from esd failure |
US6376131B1 (en) | 2000-04-04 | 2002-04-23 | Xilinx, Inc. | Methods and structures for protecting reticles from ESD failure |
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