JPS61128251A - Mask for x-ray exposure - Google Patents
Mask for x-ray exposureInfo
- Publication number
- JPS61128251A JPS61128251A JP59251212A JP25121284A JPS61128251A JP S61128251 A JPS61128251 A JP S61128251A JP 59251212 A JP59251212 A JP 59251212A JP 25121284 A JP25121284 A JP 25121284A JP S61128251 A JPS61128251 A JP S61128251A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- substrate
- several
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000006096 absorbing agent Substances 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 abstract description 6
- 238000007689 inspection Methods 0.000 abstract description 6
- 229920001721 polyimide Polymers 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000005259 measurement Methods 0.000 abstract description 4
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003014 reinforcing effect Effects 0.000 description 3
- 238000005728 strengthening Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004582 scanning ion conductance microscopy Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体集積回路装置の製造などの微細パター
ンの形成に用いるＸＩＲ露光用マスクに関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an XIR exposure mask used for forming fine patterns in the manufacture of semiconductor integrated circuit devices, etc.
従来、Ｘ！Ｉ！光用マスクとしては、ポリイミド、窒化
シ・リコン、窒化ホウ素などの基板上にＸＩＷ吸収体パ
ターンとなる金（Ａ、）膜を形成するのが通例であった
。Conventionally, X! I! As an optical mask, it has been customary to form a gold (A) film, which becomes an XIW absorber pattern, on a substrate made of polyimide, silicon nitride, boron nitride, or the like.
第２図は従来のＸ線露光用マスクの構成例を示す断面図
で、（１）はポリイミドの基板、（２）けその上に形成
されＸ＠吸収体を構成するＡｕパターン、（３）けＡｕ
パターン（２）の基板（１）への接着を強化する接着強
化用ＩＩＩ膜である。Ａｕパターン（２）は基板（１〉
のポリイミドとの接着性が悪いので、このような接着強
化用薄膜（３）が必要である。そして、従来はこの接着
強化用薄膜（３）にクロム（Ｏｒ）、チタン（Ｔ１）、
タンタル（Ｔ＆）のうちいずれかを用いていた。ところ
で、このマスクを実際に使用するに当って、半導体ウェ
ーハ上のマスク合わせパターンにマスク合わせするとき
に用いるヘリウム−ネオンレーザ光に対して、この接着
強化用薄膜＋３３の材料が透過性を有しないので、Ａｕ
パターン（２）直下部分以外は除失されていた。FIG. 2 is a cross-sectional view showing an example of the configuration of a conventional X-ray exposure mask, in which (1) is a polyimide substrate, (2) an Au pattern formed on the edge and forming an X@ absorber, and (3) KeAu
This is an adhesion-strengthening III film that strengthens the adhesion of the pattern (2) to the substrate (1). The Au pattern (2) is attached to the substrate (1)
Since the adhesion with polyimide is poor, such a thin film (3) for reinforcing adhesion is necessary. Conventionally, this adhesion-strengthening thin film (3) was made of chromium (Or), titanium (T1),
Either tantalum (T&) was used. By the way, when actually using this mask, the material of this adhesion-strengthening thin film +33 does not have transparency to the helium-neon laser beam used when aligning the mask to the mask alignment pattern on the semiconductor wafer. Therefore, Au
Pattern (2) All parts other than the part directly below had been removed.
Ｘ＠露光用マスクの製造工程ではＸ＠吸収体パターンの
寸法制御が重要であり、その寸法測定にはサブミクロン
領域に有効な走査電子顕微鏡（ｓｍＭ）が用いられる。In the manufacturing process of the X@ exposure mask, it is important to control the dimensions of the X@ absorber pattern, and a scanning electron microscope (smM), which is effective in the submicron region, is used to measure the dimensions.
ＳＬＣＭを用いた寸法測定ではＸ＠露光用マスク上を電
子ビームで走査し、基板材料と吸収体材料とで強度の異
なる二次電子信号をとらえ、これらの信号を処理するこ
とによってパターン寸法の測定を行っている。ところが
、第２図の従来のＸｌｌ５１ｍ光用マスクでは基板材料
の絶縁材料であり、Ａｕパターンのない部分は基板が直
接露出しているので、上記電子ビームの走査によって、
この部分の基板中に電子が蓄積し、負に帯電する。In dimension measurement using SLCM, the X@exposure mask is scanned with an electron beam, secondary electron signals with different intensities are captured by the substrate material and absorber material, and pattern dimensions are measured by processing these signals. It is carried out. However, in the conventional Xll51m optical mask shown in Fig. 2, the substrate material is an insulating material, and the parts without the Au pattern are directly exposed to the substrate, so by scanning with the electron beam,
Electrons accumulate in this part of the substrate and it becomes negatively charged.
このような状態になると、入射電子ビームは反発され、
ｘｌｌｉｌｌ用マスクからの二次電子の放射が困−にな
る。その結果、正確な寸法測定値が得られないという問
題点があった。In this state, the incident electron beam is repelled,
Emission of secondary electrons from the xllill mask becomes a problem. As a result, there was a problem in that accurate dimension measurements could not be obtained.
この発明はかかる問題点を解決するためになされたもの
で、ＳｌＣＭでのマスク検査で寸法測定が正確に行なえ
るｘＩ！露光用マスクを得ることを目的としている。This invention was made to solve this problem, and it is possible to accurately measure dimensions by mask inspection using SlCM. The purpose is to obtain a mask for exposure.
この発明に係るＸ線露光用マスクでは、基板上に導電性
を有し、かつ可視光透過性のある膜を形成し、その上に
ｘｆｊｌ吸収体パターンを形成したものである。In the X-ray exposure mask according to the present invention, a conductive and visible light transparent film is formed on a substrate, and an xfjl absorber pattern is formed on the film.
この発明では、ＸＭ吸収体パターンの直下に接着強化用
薄膜を形成するとともに、この薄膜をＸ線吸収体パター
ン形成部位以外にも形成し、しかもこの薄膜は可視光透
過性をもつので、半導体ウェーハとのマスク位置合わせ
が可能であり、導電性をもつので、ＳＩＣＭによるマス
ク検査にも支障がない。In this invention, a thin film for reinforcing adhesion is formed directly under the XM absorber pattern, and this thin film is also formed in areas other than the area where the X-ray absorber pattern is formed, and since this thin film is transparent to visible light, the semiconductor wafer is Since the mask can be aligned with the mask and has conductivity, there is no problem with mask inspection by SICM.
第１図はこの発明の一実施例の構成を示す断面図で、ポ
リイミドからなる基板（１）の一方の主面上全面に酸化
インジウムまたは酸化スズからなる可視光透過性導電膜
（４）を形成し、更にその上に、ＡｕからなるＸＭ吸収
体パターン（２）が形成されている。FIG. 1 is a sectional view showing the structure of an embodiment of the present invention, in which a visible light-transmitting conductive film (4) made of indium oxide or tin oxide is coated entirely on one main surface of a substrate (1) made of polyimide. Further, an XM absorber pattern (2) made of Au is formed thereon.
このような可視光透過性導電膜Ｌ膜（４）は数１００Ω
／口〜数にΩ／口の導電性を有しており、膜厚は数１Ｏ
Ａ−数１０ＯＡ の範囲であるのでｘｇ通過には減衰を
与えない。可視光透過性を有しているので、このｘ、Ｉ
！ｓ出用マスクの光学系を利用した半導体ウェーハ上へ
のアライメントも十分に可能である。Such a visible light transparent conductive film L film (4) has a resistance of several hundreds of Ω.
It has a conductivity of Ω/Ω to several Ω/Ω, and the film thickness is several 10Ω.
Since it is in the range of A-several 10 OA, no attenuation is given to the xg passage. Since it has visible light transparency, this x, I
! Alignment onto a semiconductor wafer using the optical system of the mask for s-emission is also fully possible.
さらに、この膜Ｃ４）を接地端子に接触させておけばＳ
ＩＭによるマスク検査の際にも基板（１）のチャージア
ップは防止され、正確なパターン寸法の測定が可能であ
る。なお、従来例におけるＯｒ、 ＴｉまたけＴａから
なる接着強化用薄膜のようにエツチング除去する必要が
ないので、マスク製作の工程か簡単になる。Furthermore, if this film C4) is brought into contact with the ground terminal, S
Charge-up of the substrate (1) is also prevented during mask inspection by IM, making it possible to accurately measure pattern dimensions. It should be noted that since there is no need to remove it by etching unlike the adhesion reinforcing thin film made of Or, Ti and Ta in the conventional example, the mask manufacturing process is simplified.
なお、上記実施例では可視光透過性ａｔ膜を基板上全面
に形成したが、ＳＫＭで電子ビーム走査する領域のみ形
成するようにしてもよい。また、基板にはポリイミドを
用いたが可視光及びｘｌｌＡを透過する材料であれば他
のものでもよい。更にＸＳ吸収体もＡｕに限るものでは
ないことも勿論である。In the above embodiment, the visible light transmitting at film was formed on the entire surface of the substrate, but it may be formed only in the area to be scanned with the electron beam by SKM. Further, although polyimide is used for the substrate, other materials may be used as long as they transmit visible light and xllA. Furthermore, it goes without saying that the XS absorber is not limited to Au.
以上説明したように、この発明に係るｘｉｔｓｖｘ光用
マスクでは、ＳＩＭで寸法検査をする際の電子ビーム走
査領域はＸ線吸収体パターンのない部分にも基板上に導
電膜があるので、基板のチャージアップを生ぜず正確な
寸法測定ができ、しかもその導電膜が透光性を有するの
で、当該マスクのマスクアライメントを可視光を用いて
行うことができる。As explained above, in the xitsvx optical mask according to the present invention, since there is a conductive film on the substrate even in the part where there is no X-ray absorber pattern in the electron beam scanning area when performing dimension inspection with SIM, Accurate dimensional measurements can be made without causing charge-up, and since the conductive film is translucent, mask alignment of the mask can be performed using visible light.
第１図はこの発明の一実施例の構成を示す断面図、第２
図は従来のＸ１１ｍ！充用マスクの構成例を示す断面図
である。
図において、（１）は基板、（２）はＸ線吸収体パター
ン、（４）は可視光透過性導電膜である。
なお、各図中同一符号は同一または相当部分を示す。FIG. 1 is a sectional view showing the configuration of an embodiment of the present invention, and FIG.
The diagram shows the conventional X11m! It is a sectional view showing an example of composition of a reusable mask. In the figure, (1) is a substrate, (2) is an X-ray absorber pattern, and (4) is a visible light-transmitting conductive film. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (3)
性導電膜を形成し、更にその上にＸ線吸収体パターンを
形成してなることを特徴とするＸ線露光用マスク。(1) An X-ray exposure mask characterized by forming a visible light-transmitting conductive film in a required area on one principal surface of a mask substrate, and further forming an X-ray absorber pattern thereon.
とを特徴とする特許請求の範囲第１項記載のＸ線露光用
マスク。(2) The X-ray exposure mask according to claim 1, wherein the visible light-transmitting conductive film is made of indium oxide.
徴とする特許請求の範囲第１項記載のＸ線露光用マスク
。(3) The X-ray exposure mask according to claim 1, wherein the visible light-transmitting conductive film is made of tin oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59251212A JPS61128251A (en) | 1984-11-26 | 1984-11-26 | Mask for x-ray exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59251212A JPS61128251A (en) | 1984-11-26 | 1984-11-26 | Mask for x-ray exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61128251A true JPS61128251A (en) | 1986-06-16 |
Family
ID=17219363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59251212A Pending JPS61128251A (en) | 1984-11-26 | 1984-11-26 | Mask for x-ray exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61128251A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63166226A (en) * | 1986-12-27 | 1988-07-09 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of x-ray exposure mask |
| JPH02309A (en) * | 1987-12-29 | 1990-01-05 | Canon Inc | Mask for x-ray and light exposing method using it |
| JPH02310A (en) * | 1987-12-29 | 1990-01-05 | Canon Inc | Mask for x-ray and light exposing method using it |
| US5126220A (en) * | 1990-02-01 | 1992-06-30 | Fujitsu Limited | Reticle for photolithographic patterning |
| FR2894690A1 (en) * | 2005-12-13 | 2007-06-15 | Commissariat Energie Atomique | REFLEXION LITHOGRAPHY MASK AND METHOD FOR MANUFACTURING THE MASK |
-
1984
- 1984-11-26 JP JP59251212A patent/JPS61128251A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63166226A (en) * | 1986-12-27 | 1988-07-09 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of x-ray exposure mask |
| JPH02309A (en) * | 1987-12-29 | 1990-01-05 | Canon Inc | Mask for x-ray and light exposing method using it |
| JPH02310A (en) * | 1987-12-29 | 1990-01-05 | Canon Inc | Mask for x-ray and light exposing method using it |
| US5126220A (en) * | 1990-02-01 | 1992-06-30 | Fujitsu Limited | Reticle for photolithographic patterning |
| FR2894690A1 (en) * | 2005-12-13 | 2007-06-15 | Commissariat Energie Atomique | REFLEXION LITHOGRAPHY MASK AND METHOD FOR MANUFACTURING THE MASK |
| WO2007068614A1 (en) * | 2005-12-13 | 2007-06-21 | Commissariat A L'energie Atomique | Reflection lithography mask and method for making same |
| US7972751B2 (en) | 2005-12-13 | 2011-07-05 | Commissariat A L'energie Atmoique | Reflection photolithography mask, and process for fabricating this mask |
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