JPS594435A - 電子ビ−ムアニ−ル方法 - Google Patents

電子ビ−ムアニ−ル方法

Info

Publication number
JPS594435A
JPS594435A JP11104382A JP11104382A JPS594435A JP S594435 A JPS594435 A JP S594435A JP 11104382 A JP11104382 A JP 11104382A JP 11104382 A JP11104382 A JP 11104382A JP S594435 A JPS594435 A JP S594435A
Authority
JP
Japan
Prior art keywords
electron beam
annealing
annealing method
electron
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11104382A
Other languages
English (en)
Japanese (ja)
Other versions
JPH021531B2 (enrdf_load_stackoverflow
Inventor
Seiichiro Kawamura
河村　誠一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11104382A priority Critical patent/JPS594435A/ja
Publication of JPS594435A publication Critical patent/JPS594435A/ja
Publication of JPH021531B2 publication Critical patent/JPH021531B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP11104382A 1982-06-28 1982-06-28 電子ビ−ムアニ−ル方法 Granted JPS594435A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11104382A JPS594435A (ja) 1982-06-28 1982-06-28 電子ビ−ムアニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11104382A JPS594435A (ja) 1982-06-28 1982-06-28 電子ビ−ムアニ−ル方法

Publications (2)

Publication Number Publication Date
JPS594435A true JPS594435A (ja) 1984-01-11
JPH021531B2 JPH021531B2 (enrdf_load_stackoverflow) 1990-01-11

Family

ID=14550958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11104382A Granted JPS594435A (ja) 1982-06-28 1982-06-28 電子ビ−ムアニ−ル方法

Country Status (1)

Country Link
JP (1) JPS594435A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61266387A (ja) * 1985-05-20 1986-11-26 Fujitsu Ltd 半導体薄膜のレ−ザ再結晶化法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61266387A (ja) * 1985-05-20 1986-11-26 Fujitsu Ltd 半導体薄膜のレ−ザ再結晶化法

Also Published As

Publication number Publication date
JPH021531B2 (enrdf_load_stackoverflow) 1990-01-11

Similar Documents

Publication Publication Date Title
US4439245A (en) Electromagnetic radiation annealing of semiconductor material
CN1641836B (zh) 提供连续运动顺序横向固化的方法和系统
US4234356A (en) Dual wavelength optical annealing of materials
TW452926B (en) Process for fabricating SOI substrate with high-efficiency recovery from damage due to ion implantation
JP2012503886A (ja) オクタデカボラン自己アモルファス化注入種を使用する無欠陥接合形成
JPS59205711A (ja) 半導体装置の製造方法
JPS594435A (ja) 電子ビ−ムアニ−ル方法
JP2012024824A (ja) レーザ加工方法
JPH11186163A (ja) 薄膜形成方法および薄膜形成装置
TW200541078A (en) Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
JPH0562924A (ja) レーザアニール装置
Paetzel et al. Lasers solutions for wafer and thin‐film annealing
WO1980001121A1 (en) Dual wavelength laser annealing of materials
JPH02100297A (ja) レーザ励起型ｘ線の発生方法
Merli et al. Self annealing of ion implanted silicon: suggestion for an experiment
Hess et al. CW laser annealing of ion-implanted silicon
JPS584257A (ja) 走査型電子ビ−ムアニ−ル装置
JPS59125612A (ja) 単結晶薄膜形成装置
JP5702556B2 (ja) レーザ加工方法
JP2002252173A (ja) レーザーアニール方法
JPH09293718A (ja) 半導体製造装置及び半導体装置の製造方法
JPH0721954A (ja) イオンビーム発生方法および電界電離型ガスフェーズイオン源
JPH038101B2 (enrdf_load_stackoverflow)
JPS62213051A (ja) 線状電子線発生装置
JPH0371767B2 (enrdf_load_stackoverflow)