JPS5941846A - 低温用プロ−バ - Google Patents

低温用プロ−バ

Info

Publication number
JPS5941846A
JPS5941846A JP57151299A JP15129982A JPS5941846A JP S5941846 A JPS5941846 A JP S5941846A JP 57151299 A JP57151299 A JP 57151299A JP 15129982 A JP15129982 A JP 15129982A JP S5941846 A JPS5941846 A JP S5941846A
Authority
JP
Japan
Prior art keywords
vacuum chamber
measured
probe
low temperature
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57151299A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6258660B2 (enrdf_load_stackoverflow
Inventor
Kenji Katsuta
健治 活田
Tagahiko Ohara
大原　多賀彦
Yoshie Hasegawa
義栄 長谷川
Tatsuji Oota
達司 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON MAIKURONIKUSU KK
Nippon Telegraph and Telephone Corp
Micronics Japan Co Ltd
Original Assignee
NIPPON MAIKURONIKUSU KK
Nippon Telegraph and Telephone Corp
Micronics Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON MAIKURONIKUSU KK, Nippon Telegraph and Telephone Corp, Micronics Japan Co Ltd filed Critical NIPPON MAIKURONIKUSU KK
Priority to JP57151299A priority Critical patent/JPS5941846A/ja
Publication of JPS5941846A publication Critical patent/JPS5941846A/ja
Publication of JPS6258660B2 publication Critical patent/JPS6258660B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP57151299A 1982-08-31 1982-08-31 低温用プロ−バ Granted JPS5941846A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57151299A JPS5941846A (ja) 1982-08-31 1982-08-31 低温用プロ−バ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57151299A JPS5941846A (ja) 1982-08-31 1982-08-31 低温用プロ−バ

Publications (2)

Publication Number Publication Date
JPS5941846A true JPS5941846A (ja) 1984-03-08
JPS6258660B2 JPS6258660B2 (enrdf_load_stackoverflow) 1987-12-07

Family

ID=15515642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57151299A Granted JPS5941846A (ja) 1982-08-31 1982-08-31 低温用プロ−バ

Country Status (1)

Country Link
JP (1) JPS5941846A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190737A (ja) * 1986-02-17 1987-08-20 Fujitsu Ltd 低温用オ−トプロ−バ−
JPH01308087A (ja) * 1988-06-06 1989-12-12 Sumitomo Heavy Ind Ltd 極低温プローバ・トリマ
US5084671A (en) * 1987-09-02 1992-01-28 Tokyo Electron Limited Electric probing-test machine having a cooling system
DE102005015334B4 (de) * 2005-04-01 2017-02-09 Cascade Microtech, Inc. Prober zum Testen von Substraten bei Temperaturen im Bereich der Siedetemperatur von Helium
CN111811939A (zh) * 2020-07-21 2020-10-23 上海交通大学 超低温环境下的高精度纳米力学检测系统
CN112630620A (zh) * 2020-12-14 2021-04-09 清华大学 用于半导体样品的测试装置、测试系统及其测试方法
EP4062445A4 (en) * 2019-11-19 2023-12-20 High Precision Devices Inc. CRYOGENIC WAFER TEST SYSTEM

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190737A (ja) * 1986-02-17 1987-08-20 Fujitsu Ltd 低温用オ−トプロ−バ−
US5084671A (en) * 1987-09-02 1992-01-28 Tokyo Electron Limited Electric probing-test machine having a cooling system
JPH01308087A (ja) * 1988-06-06 1989-12-12 Sumitomo Heavy Ind Ltd 極低温プローバ・トリマ
DE102005015334B4 (de) * 2005-04-01 2017-02-09 Cascade Microtech, Inc. Prober zum Testen von Substraten bei Temperaturen im Bereich der Siedetemperatur von Helium
EP4062445A4 (en) * 2019-11-19 2023-12-20 High Precision Devices Inc. CRYOGENIC WAFER TEST SYSTEM
US11927621B2 (en) 2019-11-19 2024-03-12 High Precision Devices, Inc. Cryogenic wafer testing system
CN111811939A (zh) * 2020-07-21 2020-10-23 上海交通大学 超低温环境下的高精度纳米力学检测系统
CN112630620A (zh) * 2020-12-14 2021-04-09 清华大学 用于半导体样品的测试装置、测试系统及其测试方法

Also Published As

Publication number Publication date
JPS6258660B2 (enrdf_load_stackoverflow) 1987-12-07

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