JPS5940225B2 - Vapor deposition equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vapor deposition apparatus capable of forming a film of uniform thickness, particularly to a precision thin film vapor deposition apparatus used in the semiconductor industry.

Generally, vacuum evaporation methods, sputtering evaporation methods, vapor phase reaction methods, and the like are widely used as methods for forming metal films.

In this type of vapor deposition process, the distribution of the film thickness is large, and the variation in film thickness is ±2 even within the same production rod.
There was a drawback that it was difficult to manufacture high-precision devices. This is due to constraints on the geometric dimensions of the target itself, for example in a parallel plate sputtering deposition apparatus using a flat plate sputtering target. In this case, in general, with a flat target, when a substrate is placed facing the target, the film thickness tends to be thick near the center of the target, and the film thickness tends to become thin near the periphery of the target. That is, as shown in FIG. 1A,
A disk-shaped evaporation source 1 is used, and a substrate 2 is placed facing it.
When the film is mounted on the substrate table 3 and vapor deposition is performed, the film thickness distribution on the substrate 2 becomes as shown in FIGS. 1B and 1C.

Figure B shows the in-plane distribution (
Figure C shows the radial distribution (a-a' in Figure B).
line). This corresponds to, for example, when a sputtering target is used as an evaporation source. The inventors have solved the film thickness distribution due to geometric dimensions in such conventional evaporation equipment by installing a shield between the two to partially shield the substrate from the evaporation source. Succeeded in significantly reducing the
No. 08885).

However, in the conventional method, the film thickness was made uniform by changing the shape of the shield, and although the film thickness distribution in the direction perpendicular to the direction of movement of the shield could be improved, the film thickness in the direction of movement could be improved. It is not possible to improve the distribution. Therefore, the conventional methods described above cannot be applied when it is necessary to deposit onto a large substrate or when film thickness accuracy is strictly required. The present invention improves upon this technique.

The present invention aims to provide a vapor deposition apparatus that can form a thin film with a uniform thickness. Hereinafter, the apparatus of the present invention will be explained in detail. FIG. 2 shows the basic configuration of an embodiment of the vapor deposition apparatus according to the present invention, and FIG. 2A is a side sectional view, and FIG.
is a plan view.

The main part of this evaporation device is a square or rectangular evaporation source 2.
1. A substrate stand 22, a substrate 23 installed on the soil, and a plurality of shielding blade-like thin plates 24, 25. They are repeatedly moved along the side directions 26 and 27 at mutually independent periods. In the conventional method, there is only one feather-like shield (even if it is divided into multiple pieces,
(Their movement direction is the same, and it is essentially the same as one sheet.) Therefore, depending on the shape of the shield, the film thickness distribution in the direction perpendicular to the movement direction can be corrected to make the film thickness uniform. However, it was not possible to correct and improve the film thickness distribution in the direction parallel to the direction of movement. In other words, the conventional method could only perform one-dimensional correction. The present invention enables two-dimensional correction of this all at once. When the wing-shaped shields 24 and 25 are not used,
A film thickness distribution as shown by curves 103 and 104 in FIG. 2C is obtained on the surface of the substrate 21. For example, even if the film thickness in the peripheral part is 80% of the film thickness in the central part, by using the shielding bodies 24 and 25, it can be reduced to 1%.
The film thickness deviation could be improved to the following. The shape of the shielding body of the feather-shaped thin plate is based on the same idea as the blade-shaped thin plate mentioned above, that is, if the shielding body is not used, the shape of the shielding body facing the thick part of the deposited film in the film thickness distribution. The width may be made wider, and the width may be made narrower in the portion facing the area where the film thickness distribution is thinner. The present invention is particularly effective in sputtering vapor deposition equipment.

In particular, when used in a magnetron-type sputtering vapor deposition apparatus with a high evaporation rate, a great feature is obtained in that high-speed vapor deposition is achieved with a uniform film thickness distribution. In the above embodiment, an apparatus using a planar magnetron evaporation source has been described, but the present invention can also be applied to other magnetron evaporation apparatuses. The evaporation apparatus according to the present invention includes an evaporation source, a substrate placed facing the evaporation source, and a shield that partially shields the substrate from the evaporation source between the evaporation source and the substrate. It is particularly characterized by the fact that two shields are moved independently of each other relative to the shield.

In this case, a sputtering evaporation source is given as an example of the evaporation source, but the present invention is not necessarily limited to a sputtering evaporation source, and can also be applied to a evaporation apparatus that uses a thermal evaporation source using laser beam irradiation, for example. can be applied. Furthermore, in the above embodiments, the case where the apparatus of the present invention is used for forming thin films of semiconductor integrated circuits has been described, but the apparatus of the present invention can also be used for thin film precision processing other than those related to semiconductor devices, such as ultra-precision thin film resistors. It is particularly effective for use in manufacturing ultra-precision electronic components, AD converters, magnetic heads, surface acoustic wave devices, and even ultra-precision thin film sensors, and has a wide range of practical applications.

[Brief explanation of the drawing]

Figure 1A shows the configuration of the main parts of the vapor deposition apparatus, and Figure 1B
, C indicate the resulting film thickness distribution. FIG. 2A shows another configuration example of the main parts of the vapor deposition apparatus according to the present invention, FIG. 2B shows the arrangement of the shielding plate, and FIG. 2C shows the film thickness distribution obtained thereby. ing. 21... Evaporation source, 22... Substrate stand, 23... Substrate, 24... Shielding plate.

Claims (1)

[Scope of Claims] 1. An evaporation source having a square or rectangular shape, a substrate disposed facing the evaporation source, and a portion of the substrate with respect to the evaporation source between the evaporation source and the substrate. the shielding body is configured of at least two blade-like thin plates, and during vapor deposition, the blade-like thin plates are arranged along the side of the evaporation source and perpendicular to each other. A vapor deposition apparatus characterized in that the shielding body and the substrate are moved relative to each other so that the shielding body and the substrate move in a direction in which the shielding body and the substrate move in the direction of the shielding body. 2. In the vapor deposition apparatus according to claim 1,
A vapor deposition apparatus characterized in that a sputtering evaporation source is used as an evaporation source. 3. In the vapor deposition apparatus according to claim 2,
A vapor deposition apparatus characterized in that a magnetron sputtering evaporation source is used as a sputtering evaporation source. 4. The vapor deposition apparatus according to claim 2, characterized in that a planar magnetron evaporation source is used as the sputtering evaporation source.