JPS5936988A - 垂直発振型半導体レ−ザ - Google Patents

垂直発振型半導体レ−ザ

Info

Publication number
JPS5936988A
JPS5936988A JP14812682A JP14812682A JPS5936988A JP S5936988 A JPS5936988 A JP S5936988A JP 14812682 A JP14812682 A JP 14812682A JP 14812682 A JP14812682 A JP 14812682A JP S5936988 A JPS5936988 A JP S5936988A
Authority
JP
Japan
Prior art keywords
laser
active layer
wavelength
layer
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14812682A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6412114B2 (enExample
Inventor
Mutsuro Ogura
睦郎 小倉
Takafumi Yao
隆文 八百
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP14812682A priority Critical patent/JPS5936988A/ja
Publication of JPS5936988A publication Critical patent/JPS5936988A/ja
Publication of JPS6412114B2 publication Critical patent/JPS6412114B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP14812682A 1982-08-26 1982-08-26 垂直発振型半導体レ−ザ Granted JPS5936988A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14812682A JPS5936988A (ja) 1982-08-26 1982-08-26 垂直発振型半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14812682A JPS5936988A (ja) 1982-08-26 1982-08-26 垂直発振型半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS5936988A true JPS5936988A (ja) 1984-02-29
JPS6412114B2 JPS6412114B2 (enExample) 1989-02-28

Family

ID=15445836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14812682A Granted JPS5936988A (ja) 1982-08-26 1982-08-26 垂直発振型半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS5936988A (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032381A (ja) * 1983-08-01 1985-02-19 Matsushita Electric Ind Co Ltd 面発光半導体レ−ザ装置
JPS60202979A (ja) * 1984-03-28 1985-10-14 Univ Tohoku 接合型半導体発光素子
JPS6122328A (ja) * 1984-07-11 1986-01-30 Hitachi Ltd 光双安定素子
JPS6311915A (ja) * 1986-06-05 1988-01-19 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− モノリシック非線形ファブリ−ペロ　エタロンを含む装置の製造方法
JPS6421987A (en) * 1987-07-16 1989-01-25 Fujitsu Ltd Semiconductor light emitting device
JPH01298787A (ja) * 1988-05-27 1989-12-01 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザー装置
JPH0265284A (ja) * 1988-08-31 1990-03-05 Fujitsu Ltd 半導体面発光装置と光処理方法
JPH02125670A (ja) * 1988-11-04 1990-05-14 Nec Corp 発光素子
JPH03190181A (ja) * 1989-12-19 1991-08-20 Nec Corp 面発光レーザとその製造方法
US5068869A (en) * 1987-06-19 1991-11-26 Lockheed Missiles & Space Company, Inc. Surface-emitting laser diode
JPH0423380A (ja) * 1990-05-14 1992-01-27 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
JPH0461184A (ja) * 1990-06-22 1992-02-27 Nec Corp 面発光半導体レーザの製造方法
JPH05136530A (ja) * 1991-04-29 1993-06-01 American Teleph & Telegr Co <Att> 半導体レーザ装置
JPH10229250A (ja) * 1997-02-14 1998-08-25 Fuji Xerox Co Ltd 半導体装置
JP2013021204A (ja) * 2011-07-13 2013-01-31 Canon Inc 垂直共振器型面発光レーザ
JP2016049755A (ja) * 2014-09-02 2016-04-11 富士ゼロックス株式会社 乾燥装置、及び画像形成装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367391A (en) * 1976-11-29 1978-06-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS5640288A (en) * 1979-07-03 1981-04-16 Licentia Gmbh Electroluminescence unit
JPS5648192A (en) * 1979-09-13 1981-05-01 Xerox Corp Lateral light emitting electroluminescence unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367391A (en) * 1976-11-29 1978-06-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS5640288A (en) * 1979-07-03 1981-04-16 Licentia Gmbh Electroluminescence unit
JPS5648192A (en) * 1979-09-13 1981-05-01 Xerox Corp Lateral light emitting electroluminescence unit

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032381A (ja) * 1983-08-01 1985-02-19 Matsushita Electric Ind Co Ltd 面発光半導体レ−ザ装置
JPS60202979A (ja) * 1984-03-28 1985-10-14 Univ Tohoku 接合型半導体発光素子
JPS6122328A (ja) * 1984-07-11 1986-01-30 Hitachi Ltd 光双安定素子
JPS6311915A (ja) * 1986-06-05 1988-01-19 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− モノリシック非線形ファブリ−ペロ　エタロンを含む装置の製造方法
US5068869A (en) * 1987-06-19 1991-11-26 Lockheed Missiles & Space Company, Inc. Surface-emitting laser diode
JPS6421987A (en) * 1987-07-16 1989-01-25 Fujitsu Ltd Semiconductor light emitting device
JPH01298787A (ja) * 1988-05-27 1989-12-01 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザー装置
JPH0265284A (ja) * 1988-08-31 1990-03-05 Fujitsu Ltd 半導体面発光装置と光処理方法
JPH02125670A (ja) * 1988-11-04 1990-05-14 Nec Corp 発光素子
JPH03190181A (ja) * 1989-12-19 1991-08-20 Nec Corp 面発光レーザとその製造方法
JPH0423380A (ja) * 1990-05-14 1992-01-27 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
JPH0461184A (ja) * 1990-06-22 1992-02-27 Nec Corp 面発光半導体レーザの製造方法
JPH05136530A (ja) * 1991-04-29 1993-06-01 American Teleph & Telegr Co <Att> 半導体レーザ装置
JPH10229250A (ja) * 1997-02-14 1998-08-25 Fuji Xerox Co Ltd 半導体装置
JP2013021204A (ja) * 2011-07-13 2013-01-31 Canon Inc 垂直共振器型面発光レーザ
JP2016049755A (ja) * 2014-09-02 2016-04-11 富士ゼロックス株式会社 乾燥装置、及び画像形成装置

Also Published As

Publication number Publication date
JPS6412114B2 (enExample) 1989-02-28

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