JPS593550U - Stem for high power semiconductors - Google Patents

Stem for high power semiconductors

Info

Publication number
JPS593550U
JPS593550U JP9907982U JP9907982U JPS593550U JP S593550 U JPS593550 U JP S593550U JP 9907982 U JP9907982 U JP 9907982U JP 9907982 U JP9907982 U JP 9907982U JP S593550 U JPS593550 U JP S593550U
Authority
JP
Japan
Prior art keywords
stem
high power
power semiconductors
glass
lead wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9907982U
Other languages
Japanese (ja)
Other versions
JPS6233327Y2 (en
Inventor
薄永　行泰
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP9907982U priority Critical patent/JPS593550U/en
Publication of JPS593550U publication Critical patent/JPS593550U/en
Application granted granted Critical
Publication of JPS6233327Y2 publication Critical patent/JPS6233327Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案の一実施例の半導体装置断面図、第２図
は他の実施例の断面図である。 なお図において、１はステム基板、２は外部引出線、３
はガラス、６は半導体ペレット、８は導　′−線、９．
１０はキャップ、１１はコールドウェルド部である。FIG. 1 is a sectional view of a semiconductor device according to one embodiment of the present invention, and FIG. 2 is a sectional view of another embodiment. In the figure, 1 is the stem board, 2 is the external leader line, and 3 is the stem board.
is glass, 6 is a semiconductor pellet, 8 is a conductive wire, 9.
10 is a cap, and 11 is a cold weld portion.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 良伝熱性の材料から成り、貫通孔を有するステム基板と
、該貫通孔に挿通された良導電性の材料から成る外部引
出線とをガラスにより夫々気密に保持固定されるステム
に於て、前記ステム基板並びに前記外部引出線をガラス
の熱膨張係数にほぼ等しくした銅・カーボン複合材料を
用いることを特徴とする大電力半導体用ステム。In a stem in which a stem substrate made of a material with good heat conductivity and having a through hole, and an external lead wire made of a material with good conductivity inserted into the through hole are each airtightly held and fixed by glass, the above-mentioned A stem for a high-power semiconductor, characterized in that the stem substrate and the external lead wire are made of a copper/carbon composite material whose thermal expansion coefficient is approximately equal to that of glass.
JP9907982U 1982-06-30 1982-06-30 Stem for high power semiconductors Granted JPS593550U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9907982U JPS593550U (en) 1982-06-30 1982-06-30 Stem for high power semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9907982U JPS593550U (en) 1982-06-30 1982-06-30 Stem for high power semiconductors

Publications (2)

Publication Number Publication Date
JPS593550U true JPS593550U (en) 1984-01-11
JPS6233327Y2 JPS6233327Y2 (en) 1987-08-26

Family

ID=30234955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9907982U Granted JPS593550U (en) 1982-06-30 1982-06-30 Stem for high power semiconductors

Country Status (1)

Country Link
JP (1) JPS593550U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6332035A (en) * 1986-07-26 1988-02-10 株式会社マブチ Floor panel used in prefabricated type structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6332035A (en) * 1986-07-26 1988-02-10 株式会社マブチ Floor panel used in prefabricated type structure

Also Published As

Publication number Publication date
JPS6233327Y2 (en) 1987-08-26

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