JPS5935490A - 光半導体装置の製造方法 - Google Patents

光半導体装置の製造方法

Info

Publication number
JPS5935490A
JPS5935490A JP57147359A JP14735982A JPS5935490A JP S5935490 A JPS5935490 A JP S5935490A JP 57147359 A JP57147359 A JP 57147359A JP 14735982 A JP14735982 A JP 14735982A JP S5935490 A JPS5935490 A JP S5935490A
Authority
JP
Japan
Prior art keywords
optical semiconductor
pinhole
semiconductor layer
layer
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57147359A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6259901B2 (enrdf_load_stackoverflow
Inventor
Toshiaki Yokoo
横尾　敏昭
Yasuji Honjo
本所　又嗣
Masahito Horiuchi
堀内　正仁
Takashi Shibuya
澁谷　尚
Masaru Takeuchi
勝 武内
Seiichi Kiyama
木山　精一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP57147359A priority Critical patent/JPS5935490A/ja
Publication of JPS5935490A publication Critical patent/JPS5935490A/ja
Publication of JPS6259901B2 publication Critical patent/JPS6259901B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP57147359A 1982-08-24 1982-08-24 光半導体装置の製造方法 Granted JPS5935490A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57147359A JPS5935490A (ja) 1982-08-24 1982-08-24 光半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57147359A JPS5935490A (ja) 1982-08-24 1982-08-24 光半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5935490A true JPS5935490A (ja) 1984-02-27
JPS6259901B2 JPS6259901B2 (enrdf_load_stackoverflow) 1987-12-14

Family

ID=15428410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57147359A Granted JPS5935490A (ja) 1982-08-24 1982-08-24 光半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5935490A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4700463A (en) * 1985-09-09 1987-10-20 Fuji Electric Company Ltd. Non-crystalline semiconductor solar battery and method of manufacture thereof
US4725558A (en) * 1985-11-06 1988-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor defects curing method and apparatus
US4937651A (en) * 1985-08-24 1990-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4937651A (en) * 1985-08-24 1990-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same
US4700463A (en) * 1985-09-09 1987-10-20 Fuji Electric Company Ltd. Non-crystalline semiconductor solar battery and method of manufacture thereof
US4725558A (en) * 1985-11-06 1988-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor defects curing method and apparatus

Also Published As

Publication number Publication date
JPS6259901B2 (enrdf_load_stackoverflow) 1987-12-14

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