JPS5935490A - Manufacture of photo semiconductor device - Google Patents

Abstract

PURPOSE:To avoid short-circuit trouble of conductors pinching a photo semiconductor layer when the thin film type photo semiconductor layer is to be adheringly formed by a method wherein the circumference of a pinhole generated when penetrating the layer is molten by energy radiation to bury the pinhole. CONSTITUTION:The transparent electrode layer 2 is formed on one main surface of a transparent substrate 1. After the layer 2 is patterned, a P type layer 3P, an I type layer 3I, and an N type layer 3N are laminated in order on the layer 2 to form the photo semiconductor layer 3. The fact that the pinhole 5 is formed or not in the layer 3 formed by this way is detected by a photo sensor 7 and the laser beam. When the pinhole 5 is detected, output of the laser beam 6 is increased, and the layer 3 at the circumference of the pinhole 5 is molten to bury the pinhole 5. Then the back electrode 4 is formed on the layer 3 buried the pinhole 5. Accordingly, the electrode material is prevented from invasion in the pinhole 5, and short-circuit trouble between the electrodes 2, 4 pinching the layer 3 can be avoided.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field The present invention relates to a method for manufacturing an optical semiconductor device including a thin optical semiconductor layer in which an electrophotoelectric effect occurs upon irradiation with light.

(B) Background Art There are optical semiconductor devices that utilize the photoelectric effect, which is a phenomenon in which F-photovoltaic force is generated upon light irradiation and a phenomenon in which electrical conductivity is decreased. Traditionally, semiconductor devices have been made of single crystal materials, but in recent years, new materials such as amorphous semiconductors have been actively researched, perhaps because they are easy to manufacture and cost-effective. ．． ing.

The inventors of the present invention have also developed a solar cell made of P-N junction type amorphous silicon, a solar cell sensor, and the like.

Figure 1 shows the basic structure of the above-mentioned PIN junction type amorphous silicon solar cell. ), indium oxide (
In2ox), indium oxide. Tin (1'n, 20s
-BnO2) etc. translucency i! The electrode layer (3) is an optical semiconductor layer (4) made of a P I N junction type amorphous silicon formed by adding appropriate impurities to a silicon compound atmosphere such as silane (EliH4) and causing a plasma reaction. Aluminum (
When the other side of the transparent substrate 11) is irradiated with a back electrode layer on which a metal such as An) is vapor-deposited, electron and hole pairs are generated in the layer. It moves to the light-transmitting electrode layer (2) and the back electrode layer (4) and generates a photovoltaic force.

However, as mentioned above, amorphous semiconductors such as amorphous silicon are formed by plasma reactions, etc., and the film thickness is usually from 50007 F' to about 1 μm K (in some cases, it is several μm), and is in the form of a thin film on the order of microns. In order to achieve the A pinhole (5) may be formed penetrating the optical semiconductor layer (3) made of such an amorphous semiconductor material. 3) When the back electrode layer (4) is formed on the back surface as described above, the back electrode material passes through the pinhole (5), and the translucent electrode layer (2) and the back electrode layer (4) are formed on the back surface. (c) Disclosure of the Invention The present invention has been devised to avoid such short-circuit accidents caused by pinholes. An optical semiconductor comprising the step of melting the periphery of a pinhole that penetrates through the formation of a layer by radiation of an energy beam and burying the pinhole, and then laminating an electrode 1- on the thin film optical semiconductor layer. A method for manufacturing the device is provided. In the next section, an example in which the manufacturing method of the present invention is applied to a PIN junction type amorphous silicon solar cell similar to the conventional example described above will be described in detail. The electrical conductivity may be reduced,
Needless to say, the optical semiconductor layer is not limited to amorphous silicon either.

B) Best Mode for Carrying Out the Invention First, as shown in FIG. 2, a glass is used. A transparent substrate (11) made of an insulating material such as a heat-resistant plastic and having a thickness of about 1 to 6 leaps is coated with a transparent electrode layer (2) of 5N02, In20g-8N02, etc. on one main surface of 11 by electron beam evaporation. Thickness 20
A conductive surface is formed by evaporation to an amount of about 0.00 to 50 OA. Next, after patterning the light-transmitting electrode layer (2), it is placed between the opposite electrodes in a plasma reactor, and a plasma reaction is caused in a silicon compound atmosphere in which diborane 82H6 is added to E71H4 gas. A P-type layer (6P) of P-type amorphous silicon is deposited on layer (2).

Then, on such P-type # (3F), a non-doped molding layer (6E) is formed using only S↓H4 gas, and then NWJm (5N) is sequentially layered by adding phosphine PH5 to a thickness of 5000 to 700L]A The formation of the optical semiconductor layer (3) by this plasma reaction 1c is disclosed in Japanese Patent Publication No. 56-67718, etc. (Fig. 3). It is well known.

Whether or not a pinhole (5) is formed in the thin film-like optical semiconductor layer (3) formed by plasma reaction in this way can be determined from the back surface direction of the optical semiconductor layer (3) as shown in FIG. A plane is scanned while being irradiated with an extremely low output argon gas and a laser beam (6) emitted from a laser, and a photosensor (7) is placed facing the source substrate lit to scan the laser beam (6). ) is detected by moving it in synchronization with the scanning.

If there is no hole (5), the beam source (6) will be absorbed by the photosemiconductor layer (3) and will not reach the photosensor (7), and vice versa. At the pinhole (5), the laser beam passes through the source 161U and irradiates the photosensor (7).
5) position is detected. Pinhole (5) as mentioned above
When the laser beam (6) is optically detected, the output of the laser beam (6) is increased to approximately 2 to 6 W/tyR when using an argon gas laser with an oscillation wavelength of 514.5 nm. bath melting the semiconductor layer (3);
The pinhole [51] is buried as shown in FIG. This pinhole (optical semiconductor layer with W provided with 51) 3) is once V
-The radiation of the beam light (61) causes it to enter a molten state, and then it cools down naturally, so it transforms from an amorphous semiconductor to a polycrystalline conductor, etc., and the bonding form collapses, making it essentially an insulator.-
However, since the J-fold altered area is extremely small compared to the area that gives the original '#L transformation Vc of one city, there is no harm in ignoring it from a characteristic point of view. No 0 Finally, as mentioned above, a thin film semiconductor R131 with a pinhole (5) embedded in it, plci eo 2000 ~
Approximately 10,000λ direct air evaporation on back side 1! Layer the pole layer (4) (Figure 6).

In the above embodiments, the substrate (1) is made of a transparent insulating material such as glass or heat-resistant plastic. )"0 After the semiconductor layer (3) is deposited, the pinhole (5) is detected depending on the amount of reflection of the laser beam. Also, the means for melting the optical semiconductor J button 3) is as described above. This applies not only to laser beams, but also to energy beams such as electron beams.

(The effect of the present invention is clear from the above description.) The pinhole A/
) WJ Rl: After melting by the radiation of Eo and Lugi beams and burying the pinholes, a film is formed on the thin film original semiconductor layer,
Since the pole W4 is laminated, the electrode material is prevented from entering into the pinhole of the base conductor layer, and the optical semiconductor Nj! Therefore, it is possible to avoid short-circuit accidents of the conductor that clamps the 19. Therefore, it is possible to treat products that were previously considered defective due to short-circuit accidents as non-defective products, and to reduce the yield rate during manufacturing. The top is shown in FIG. 2L, and together with the cost reduction by using a thin optical semiconductor layer, it is possible to further reduce the cost.

[Brief explanation of the drawing]

Figure 1 shows a conventional structure with a pinhole;
) is a front view, the same figure [8)
In the cross-sectional view shown in , Il + indicates the transmitting substrate, (3) the solid semiconductor layer, (4) the surface obscurity, (5) the pinhole, and (6) the laser beam source. 0 Figure 1 tA+
(Bn No. j'2c'1 and No. 31.i Fig. 4 Fig. 5

Claims (1)

[Claims] +11 A step of depositing a thin optical semiconductor layer on the conductive surface of a substrate having a conductive surface on at least one side 1j, and a step of forming a thin optical semiconductor layer on the conductive surface of the substrate, and removing a pinhole periphery generated through Vcx when forming the thin optical semiconductor layer. An optical semiconductor device comprising the steps of embedding the pinhole by melting it by radiation of an energy beam, and laminating an electrode layer on the thin film original semiconductor layer after the pinhole is buried. Production method.