JPS5935485A - 太陽電池等の構成層のピンホ−ル不活性化方法 - Google Patents

太陽電池等の構成層のピンホ−ル不活性化方法

Info

Publication number
JPS5935485A
JPS5935485A JP57145987A JP14598782A JPS5935485A JP S5935485 A JPS5935485 A JP S5935485A JP 57145987 A JP57145987 A JP 57145987A JP 14598782 A JP14598782 A JP 14598782A JP S5935485 A JPS5935485 A JP S5935485A
Authority
JP
Japan
Prior art keywords
pinhole
film
resist
photoresist
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57145987A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6240871B2 (en, 2012
Inventor
Akizou Iida
飯田　昭参
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57145987A priority Critical patent/JPS5935485A/ja
Publication of JPS5935485A publication Critical patent/JPS5935485A/ja
Publication of JPS6240871B2 publication Critical patent/JPS6240871B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP57145987A 1982-08-23 1982-08-23 太陽電池等の構成層のピンホ−ル不活性化方法 Granted JPS5935485A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57145987A JPS5935485A (ja) 1982-08-23 1982-08-23 太陽電池等の構成層のピンホ−ル不活性化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57145987A JPS5935485A (ja) 1982-08-23 1982-08-23 太陽電池等の構成層のピンホ−ル不活性化方法

Publications (2)

Publication Number Publication Date
JPS5935485A true JPS5935485A (ja) 1984-02-27
JPS6240871B2 JPS6240871B2 (en, 2012) 1987-08-31

Family

ID=15397560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57145987A Granted JPS5935485A (ja) 1982-08-23 1982-08-23 太陽電池等の構成層のピンホ−ル不活性化方法

Country Status (1)

Country Link
JP (1) JPS5935485A (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0236936A3 (de) * 1986-03-11 1989-03-29 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von elektrischen Bauelementen, vorzugsweise von aus amorphen Siliziumschichten bestehenden Solarzellen
EP0603260A4 (en) * 1991-09-13 1994-07-27 United Solar Systems Corp Photovoltaic device including shunt preventing layer and method for the deposition thereof.

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01319579A (ja) * 1988-06-20 1989-12-25 Shin Etsu Chem Co Ltd カバーレイフィルムの製造方法
JPH0379477U (en, 2012) * 1989-12-01 1991-08-13

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0236936A3 (de) * 1986-03-11 1989-03-29 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von elektrischen Bauelementen, vorzugsweise von aus amorphen Siliziumschichten bestehenden Solarzellen
EP0603260A4 (en) * 1991-09-13 1994-07-27 United Solar Systems Corp Photovoltaic device including shunt preventing layer and method for the deposition thereof.

Also Published As

Publication number Publication date
JPS6240871B2 (en, 2012) 1987-08-31

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