JPS5935428A - Mask for x-ray - Google Patents
Mask for x-rayInfo
- Publication number
- JPS5935428A JPS5935428A JP57146477A JP14647782A JPS5935428A JP S5935428 A JPS5935428 A JP S5935428A JP 57146477 A JP57146477 A JP 57146477A JP 14647782 A JP14647782 A JP 14647782A JP S5935428 A JPS5935428 A JP S5935428A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ray
- mask
- amorphous
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000005546 reactive sputtering Methods 0.000 claims abstract description 4
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 238000007733 ion plating Methods 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052731 fluorine Inorganic materials 0.000 abstract description 2
- 239000011737 fluorine Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 150000004678 hydrides Chemical class 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 26
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Abstract
Description
【発明の詳細な説明】
ミクロンの微細加工を可能とするＸ線用マスクに関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an X-ray mask that enables micron fine processing.
従来の軟Ｘ線用マスクの構造を第１図を参照しながら説
明する。乙はマスクパターンを形成するＸ線吸収金属層
、弘は軟Ｘ線透過層、夕はＸ線吸収金属層乙と軟Ｘ線透
過層弘を接合する接合部材、３は単結晶シリコン材の支
持母体であシ、マスクはこれらによって構成されている
。なお、ユはウェハｌに塗布されたレジストであシＸ線
７によってマスク露光されるものである。ところで軟Ｘ
線透過層グの材料としては一般に単結晶シリコンが用い
られている。しかし単結晶シリコンを用いるとＸ線７の
波長や入射角度によっては回折現象の影響が大きくなっ
たシあるいはその透過強度にムラが生じてレジスト上に
斑が現われ適切なバタンを得られないことが多かった。The structure of a conventional soft X-ray mask will be explained with reference to FIG. B is the X-ray absorbing metal layer that forms the mask pattern, Hiro is the soft X-ray transparent layer, Y is the joining member that joins the X-ray absorbing metal layer B and the soft X-ray transparent layer Hir, and 3 is the support for the single crystal silicon material. The mother body and mask are composed of these. Note that y is a resist coated on the wafer 1 and is exposed by a mask with X-rays 7. By the way, soft X
Single crystal silicon is generally used as the material for the radiation transmitting layer. However, when single-crystal silicon is used, depending on the wavelength and angle of incidence of the X-rays, the influence of the diffraction phenomenon becomes large, or the transmitted intensity becomes uneven, causing spots to appear on the resist and making it impossible to obtain an appropriate pattern. There were many.
また回折現象の影響を減少させる等のために軟Ｘ線透過
層グの厚さを減らすが単結晶シリコンの場合、結晶構造
により壁間を生じやすいのであまシ薄くできない。Furthermore, the thickness of the soft X-ray transparent layer is reduced in order to reduce the influence of diffraction phenomena, but in the case of single-crystal silicon, it cannot be made thinner because the crystal structure tends to cause gaps between walls.
本発明は上記の欠点を解消するためになされたものであ
り軟Ｘ線透過層を非晶質シリコン材で形成したことを特
徴とするＸ線用マスクの提供を目的とする。The present invention has been made in order to eliminate the above-mentioned drawbacks, and an object of the present invention is to provide an X-ray mask characterized in that a soft X-ray transmitting layer is formed of an amorphous silicon material.
以下図面を参照しながら本発明の一実施例を説明する。An embodiment of the present invention will be described below with reference to the drawings.
第２図は本発明の実施例に係るＸ線用マスクの構造を示
す部分断面図であり、３は厚さ３００μ程度の単結晶シ
リコン材で形成された支持母体、ＩＯは非晶質シリコン
材で形成された軟Ｘ線透過層、９は支持母体３の単結晶
シリコン層と軟Ｘ線透過層ｌθの非晶質シリコン層と接
合するだめの二酸化シリコン材で形成された接合部材で
あり厚さは大体ｌμ程度である。次に本発明に係る非晶
質シリコン層ＩＯの一形成方法である平行平板型ＧＤ（
グローディスチャージ）法を用いたマスク製造方法の一
実施例について詳しく説明する。まず表面に接合部材ワ
を有するマスク支持母体３を非晶質シリコン成長室内に
載置し、成長室内を３ Ｘ ／ ＯＴｏｒｒ程度の圧力
になるまで拡散ポンプによシ空気を抜いた後反応ガスで
ある水素ベースのＳｉＨ４／ ＯｖＯｌ ％のガスをグ
ロー放電が′可能な圧力ｌＯ〜／Ｑ Ｔｏｒｒになる
まで導入する。そして膜成長基板温度を３０θ°Ｃとす
ると成長速度ｇ Ｘ ／ ｓｅｅで水素化非晶質シリコ
ン（ａ −Ｓｉ ：Ｈ）が成長し膜厚は３．２μであっ
た。FIG. 2 is a partial cross-sectional view showing the structure of an X-ray mask according to an embodiment of the present invention, in which 3 is a support base made of a single crystal silicon material with a thickness of about 300 μm, and IO is an amorphous silicon material. The soft X-ray transparent layer 9 is a bonding member made of a silicon dioxide material that is bonded to the single crystal silicon layer of the support base 3 and the amorphous silicon layer of the soft X-ray transparent layer lθ. The distance is approximately lμ. Next, a parallel plate type GD (a method for forming an amorphous silicon layer IO according to the present invention)
An example of a mask manufacturing method using the glow discharge method will be described in detail. First, a mask support base 3 having a bonding member on its surface is placed in an amorphous silicon growth chamber, and after the growth chamber is evacuated by a diffusion pump until the pressure reaches about 3X/OTor, it is heated with a reaction gas. A certain hydrogen-based SiH4/OvOl % gas is introduced until a pressure of lO~/Q Torr is reached, at which glow discharge is possible. When the film growth substrate temperature was set to 30θ°C, hydrogenated amorphous silicon (a-Si:H) grew at a growth rate of g x /see, and the film thickness was 3.2μ.
なお膜の成長条件は必ずしも上記条件にとられれるもの
でないが水素ベース５ｉＨ４ＶＯＩ ／Ｑ〜３０係。Note that the film growth conditions are not necessarily the above conditions, but are hydrogen-based 5iH4VOI/Q~30.
ＲＦ−出力３θＷ、膜成長基板温度、２０θ〜３００°
Ｃとすれば量産性に適した膜成長速度１０〜２ＯＡが得
られる。非晶質シリコン膜の形成法としてハコの他に反
応性スパッタ法、イオンプレーテング法、蒸着法及びＣ
ＶＤ法等があるがいずれの方法による場合でもかまわな
い。ただし反応性スパッタ法等において形成される非晶
質シリコンは（ａ−８ｉ）であるから膜質改善のため特
に後処理として水素プラズマ処理あるいはフッ素熱処理
等を行い（ａ −Ｓｉ ：■−ｒ）あるいは（ａ−８ｉ
：Ｆ）にすることが望ましい。水素プラズマ後処理の一
条件としては真空度θ４’Ｔｏｒｒ 、非晶質シリコン
膜厚温度、、）３Ｑ’Ｏ，ＲＦ比出力θＷ処理時間１時
間である。このようにして形成した非晶質シリコン層９
上に、Ａｕ（金）と非晶質シリコンとの接合部材である
膜厚ｌＯθＡのＣｒ（クロム）層ｇを形成しさらにその
上に膜厚３θ００ＡのＸ線吸収金属層／／であるＡｕ層
を形成すると本発明に係るマスクが得られる。RF-output 3θW, film growth substrate temperature, 20θ~300°
If C is selected, a film growth rate of 10 to 2 OA suitable for mass production can be obtained. In addition to Hako, reactive sputtering, ion plating, vapor deposition, and C
Although there are VD methods and the like, any method may be used. However, since the amorphous silicon formed by reactive sputtering etc. is (a-8i), hydrogen plasma treatment or fluorine heat treatment is especially necessary as a post-treatment to improve the film quality (a-Si: ■-r) or (a-8i
:F) is desirable. One of the conditions for the hydrogen plasma post-treatment is vacuum degree θ4' Torr, amorphous silicon film thickness temperature, )3Q'O, and RF specific output θW processing time 1 hour. Amorphous silicon layer 9 formed in this way
On top of this, a Cr (chromium) layer g with a thickness of 10θA is formed as a bonding member between Au (gold) and amorphous silicon, and on top of that, an Au layer which is an X-ray absorbing metal layer with a thickness of 3θ00A is formed. By forming this, a mask according to the present invention can be obtained.
このようにして軟Ｘ線透過層ＩＯとして非晶質シリコン
を用いると単結晶シリコンに比べ密度が低いから同じ膜
厚でも軽くすることができる。さらに単結晶シリコン層
の場合膜厚を薄くするとその結晶性によシ壁間しやすく
強度において難があるが、非晶質シリコン層ではそのよ
うなことがなくかなシ薄くすることが可能となる。以上
によシ非晶質シリコンで軟Ｘ線透過層ＩＯを形成すると
支持母体３と接する面積領域を減らすことができるので
その分だけマスクバタン形成領域として有効に活用でき
る。さらにまた膜厚の減少によシ回折現象の影響や透過
強度によるムラ及び膜自体のたるみを少なくすることが
できる。When amorphous silicon is used as the soft X-ray transparent layer IO in this way, it has a lower density than single crystal silicon, so it can be made lighter with the same film thickness. Furthermore, when a monocrystalline silicon layer is made thinner, its crystallinity tends to cause wall-to-wall cracking, which poses a problem in terms of strength, but an amorphous silicon layer does not have this problem and can be made very thin. . As described above, when the soft X-ray transmitting layer IO is formed of amorphous silicon, the area in contact with the support base 3 can be reduced, so that it can be effectively used as a mask button forming area. Furthermore, by reducing the film thickness, it is possible to reduce the influence of diffraction phenomena, unevenness due to transmitted intensity, and sagging of the film itself.
次に本発明に係るマスクのさらに望ましい例として吸収
金属層１／等を保護する保護層を設けた実施例について
説明する。第３図はその実施例の構造を示す断面図で、
！、り／３が非晶質シリコン材で形成される軟Ｘ線透過
の保護層でその膜厚はｌμである。この保護層／３によ
りマスクバタンであるＸ層吸収金属層／ｌが保護される
のでマスクの使用耐数を増やすことができる。Next, as a more desirable example of the mask according to the present invention, an embodiment in which a protective layer for protecting the absorbing metal layer 1/etc. is provided will be described. FIG. 3 is a sectional view showing the structure of this embodiment.
! , R/3 is a soft X-ray transparent protective layer formed of an amorphous silicon material and has a thickness of lμ. This protective layer /3 protects the X-layer absorption metal layer /l, which is the mask button, so that the durability of the mask can be increased.
以よ、説明したように本発明によれば高解像力を有しマ
スクバタン面積部分の広いＸ線用マスクが可能となるの
でＬＳＩの高集積度化及び大チップ化が可能となる。As described above, according to the present invention, an X-ray mask with high resolution and a large mask button area can be provided, and therefore, it is possible to increase the integration density of LSI and to increase the size of the chip.
第１図は従来のＸ線用マスク構造を示す断面図、第２図
は本発明の実施例に係るＸ線用マスク構造を示す断面図
、第３図は本発明の別の実施例に係るＸ線用マスク構造
を示す断面図である。
ｌ・・・ウェハー、
コ・・・レジスト層、
３・・・支持母体、
ゲ、ｌθ・・・軟Ｘ線透過層、
５．９．／／・・・接合部材、
乙、１．２・・・Ｘ線吸収金属層、
１３・・・保護層
第 １ 図
第 ２ 図
第 ３ 図FIG. 1 is a sectional view showing a conventional X-ray mask structure, FIG. 2 is a sectional view showing an X-ray mask structure according to an embodiment of the invention, and FIG. 3 is a sectional view showing another embodiment of the invention. FIG. 2 is a cross-sectional view showing an X-ray mask structure. l... Wafer, Co... Resist layer, 3... Support matrix, Ge, lθ... Soft X-ray transparent layer, 5.9. //...Joining member, B, 1.2...X-ray absorbing metal layer, 13...Protective layer Fig. 1 Fig. 2 Fig. 3
Claims (1)
にマスクバタンであるＸ線吸収層を形成してなるＸ線用
マスクにおいて、 前記Ｘ線透・過層は第１の非晶質シリコンによって形成
されたものであることを特徴とするＸ線用マスク。 ２ 前記第１の非晶質シリコンはＧＤｉを用いて形成し
てなる特許請求の範囲第１項記載のＸ線用マスク。 ３ 前記第１の非晶質シリコンは反応性スパッタ法を用
いて形成してなる特許請求の範囲第１項記載のＸ線用マ
スク。 ４ 前記第１の非晶質シリコンはイオンプレーテング法
を用いて形成してなる特許請求の範囲第１項記載のＸ線
用マスク。 五 前記第１の非晶質シリコン層は水素プラズマ処理に
よシ水素を含むものである特許請求の範囲第１項ないし
第を項記載のＸ線用マスク。 ６ 前記Ｘ線吸収層上に第コの非晶質シリコン層を積層
してなる特許請求の範囲第１項ないし第Ｓ項記載のＸ線
用マスク。[Scope of Claims] L. An X-ray mask comprising an X-ray transparent layer formed on a support base and an X-ray absorbing layer serving as a mask button on the X-ray transparent layer, comprising: An X-ray mask characterized in that the layer is formed of first amorphous silicon. 2. The X-ray mask according to claim 1, wherein the first amorphous silicon is formed using GDi. 3. The X-ray mask according to claim 1, wherein the first amorphous silicon is formed using a reactive sputtering method. 4. The X-ray mask according to claim 1, wherein the first amorphous silicon is formed using an ion plating method. 5. The X-ray mask according to claim 1, wherein the first amorphous silicon layer contains hydrogen through hydrogen plasma treatment. 6. The X-ray mask according to claims 1 to 5, wherein a third amorphous silicon layer is laminated on the X-ray absorption layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57146477A JPS5935428A (en) | 1982-08-24 | 1982-08-24 | Mask for x-ray |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57146477A JPS5935428A (en) | 1982-08-24 | 1982-08-24 | Mask for x-ray |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5935428A true JPS5935428A (en) | 1984-02-27 |
Family
ID=15408521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57146477A Pending JPS5935428A (en) | 1982-08-24 | 1982-08-24 | Mask for x-ray |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5935428A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0399735A2 (en) * | 1989-05-26 | 1990-11-28 | AT&T Corp. | X-ray lithography mask and method for manufacturing such a mask |
-
1982
- 1982-08-24 JP JP57146477A patent/JPS5935428A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0399735A2 (en) * | 1989-05-26 | 1990-11-28 | AT&T Corp. | X-ray lithography mask and method for manufacturing such a mask |
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