JPS61245160A - Manufacture of x-ray mask - Google Patents
Manufacture of x-ray maskInfo
- Publication number
- JPS61245160A JPS61245160A JP60086803A JP8680385A JPS61245160A JP S61245160 A JPS61245160 A JP S61245160A JP 60086803 A JP60086803 A JP 60086803A JP 8680385 A JP8680385 A JP 8680385A JP S61245160 A JPS61245160 A JP S61245160A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- wafer
- film
- carbon
- membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 239000012528 membrane Substances 0.000 abstract description 13
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 abstract description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 41
- 229920001721 polyimide Polymers 0.000 description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000006100 radiation absorber Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Abstract
Description
【発明の詳細な説明】
（Ｊｌｌ要〕
引張り応力をもった光学的に透明な炭素膜を成膜し、そ
れをＸ線マスクのマスク支持体またはメンブレンとして
使用する。DETAILED DESCRIPTION OF THE INVENTION (Required by Jll) An optically transparent carbon film with tensile stress is formed and used as a mask support or membrane of an X-ray mask.
本発明はＸ線マスクに関するもので、さらに詳しく言え
ば、シリコンウェハ上に成膜したマスク支持体となる炭
素膜は圧縮応力をもつために凸に反るのであるが、成膜
した後において反ることのない炭素膜を成膜する方法に
関する。The present invention relates to an X-ray mask, and more specifically, a carbon film formed on a silicon wafer to serve as a mask support warps in a convex manner due to compressive stress. The present invention relates to a method of forming a carbon film without causing any damage.
例えばシリコンウェハ（以下ウェハという）の上に塗布
されたホトレジスト膜の露光に従来はガラスマスクを用
い、紫外線露光によってホトレジストの露光を行ってき
た。For example, a glass mask has conventionally been used to expose a photoresist film coated on a silicon wafer (hereinafter referred to as a wafer), and the photoresist has been exposed to ultraviolet light.
ところが、最近は集積回路を高集積化するために形成さ
れるべきパターン幅やパターン間隔が微細化される傾向
にあり、そのためには、波長の短い光が回折が起り難い
ので、電子ビーム（ＨＢ）やＸ線が用いられるようにな
ってきた。However, recently, in order to increase the integration density of integrated circuits, the pattern width and pattern spacing to be formed have become smaller. ) and X-rays have come into use.
Ｘ線露光を第４図の断面図を参照して説明すると、ウェ
ハ１１の上にホトレジスト膜１２が塗布されていて、Ｘ
線吸収体で作ったパターン１３が設けられたＸ線マスク
１４をウェハ１１の上方に配置し、Ｘ線を矢印に示す方
向に照射して露光をなす。To explain X-ray exposure with reference to the cross-sectional view in FIG. 4, a photoresist film 12 is coated on a wafer 11, and
An X-ray mask 14 provided with a pattern 13 made of a radiation absorber is placed above the wafer 11, and X-rays are irradiated in the direction shown by the arrow for exposure.
Ｘ線マスク１４は第５図の断面図に示され、それを作る
には、ウェハ１５（図に見て幅１００ｆｌのもの）の上
にポリイミドを塗布して第１ポリイミド膜１６を形成し
、全面にＴａを堆積（ｄｅｐｏｓｉｔｉｏｎ） シ、そ
れをバターニングしてＴａパターン１７を形成し、次い
で全面にポリイミドを塗布して第２ポリイミド膜１８を
形成し、最後にシリコンを斜線で示す部分を残す如くに
エツチングしてマスクを完成する。The X-ray mask 14 is shown in the cross-sectional view of FIG. 5, and is made by coating a wafer 15 (100 fl wide in the figure) with polyimide to form a first polyimide film 16; Depositing Ta on the entire surface, buttering it to form a Ta pattern 17, then coating the entire surface with polyimide to form a second polyimide film 18, and finally leaving silicon in the shaded area. Complete the mask by etching.
第１．第２ポリイミド膜はメンブレンと呼称され、それ
はＸ線を通す材料、すなわち、ポリイミドの他に窒化は
う素（ＢＮ）、窒化シリコン（ＳｉＮ）などで５μｍの
膜厚に形成され、パターンはＸ線吸収体と呼称され、Ｔ
ａ、 Ａｕ、 Ｗの如きＸ線を通さない重金属で１．０
μ蒙の厚さに堆積された膜をエツチングして形成される
。1st. The second polyimide film is called a membrane, and is made of a material that transmits X-rays, such as polyimide, boron nitride (BN), silicon nitride (SiN), etc., to a thickness of 5 μm, and the pattern is It is called an absorber and T
1.0 for heavy metals that do not transmit X-rays such as a, Au, and W.
It is formed by etching a film deposited to a thickness of μm.
Ｘ線吸収体ではＴａが応力が小さいので多用されている
ものであり、それの薄膜はスパッタリング法で堆積され
る。スパッタリングは１０−２〜１Ｏ−３Ｔｏｒｒの真
空度のアルゴン（Ａｒ）雰囲気のチャンバ内でなされ、
Ｔａのマグネトロンスパッター法（通常の口Ｃあるいは
Ｒｆスパッター法も含む）によりポリイミド層の上にＴ
ａを堆積させる。Ta is often used in X-ray absorbers because of its low stress, and its thin film is deposited by sputtering. Sputtering is performed in a chamber with an argon (Ar) atmosphere at a vacuum level of 10-2 to 10-3 Torr,
T is deposited on the polyimide layer by Ta magnetron sputtering (including ordinary C or Rf sputtering).
Deposit a.
最近、前記したメンブレンをＢＮ：ＨやＳｉＮに代えて
炭素膜で作ることが試みられているが、その理由は、炭
素の結晶体にグラファイトからダイヤモンドまでがある
が、ダイヤモンドに近い結晶体は硬く、伸び縮みするこ
となく、またＸ線に対して透明で、マスク支持体として
優れた性質をもつからである。Recently, attempts have been made to make the above-mentioned membrane with a carbon film instead of BN:H or SiN.The reason for this is that carbon crystals range from graphite to diamond, but crystals close to diamond are hard. This is because it does not expand or contract, is transparent to X-rays, and has excellent properties as a mask support.
Ｘ線マスクに炭素膜を用いる技術については広く研究が
なされていて、特開昭５７−１２８０３１号公報には、
「ダイヤモンド状炭素膜を基板材料として」用い、また
「窒化シリコン、酸化シリコン、硼素添加シリコン、窒
化硼素の内鍔れか１種の薄膜にダイヤモンド状炭素を積
層した複合膜を基板材料として」用いる露光用マスクが
、特開昭５８−２０４５３４号公報には、「ダイヤモン
ドまたはダイヤモンドと無定形炭素の混合物からなる薄
膜をＸ線透過体として有するＪＸ線リソグラフィー用マ
スクが、さらに特開昭５９−９９２１号公報には、「水
素添加アモルファス化炭素から成るｊＸ線マスク用フィ
ルムとそれの製造方法が開示されている。The technology of using carbon films in X-ray masks has been extensively researched, and Japanese Patent Application Laid-open No. 128031/1983 describes
"A diamond-like carbon film is used as a substrate material," and "a composite film in which diamond-like carbon is layered on a thin film of one of silicon nitride, silicon oxide, boron-doped silicon, or boron nitride is used as a substrate material." The exposure mask is described in Japanese Patent Application Laid-Open No. 58-204534 as follows: ``A mask for J The publication discloses a film for an X-ray mask made of hydrogenated amorphized carbon and a method for producing the same.
第３図に炭素膜２２をウェハ１１上に成膜した場合の構
造が模式的に示されるが、炭素膜２２は圧縮応力をもっ
ているために、図示の如く上方に凸に反り、それに追随
してウェハ１１も同様に反っている。FIG. 3 schematically shows the structure when the carbon film 22 is formed on the wafer 11. Since the carbon film 22 has compressive stress, it warps upward in a convex manner as shown in the figure, and follows it. The wafer 11 is also warped in the same way.
このウェハの中心部分をエツチングで除去して図示の如
く周辺部分１１ａのみを残すと、それまで炭素膜２２を
支えていたウェハ部分がなくなったため炭素膜はのびて
しまい、その表面に波うったようなしわが発生すること
が確認された。When the central part of the wafer is removed by etching and only the peripheral part 11a is left as shown in the figure, the wafer part that had previously supported the carbon film 22 is no longer present, and the carbon film stretches out, creating a wave-like appearance on its surface. It was confirmed that wrinkles were generated.
本発明はこのような点に鑑みて創作されたもので、成膜
後において反ることのない炭素膜を作る方法を提供する
ことを目的とする。The present invention was created in view of these points, and an object of the present invention is to provide a method for producing a carbon film that does not warp after film formation.
第１図は本発明実施例の断面図である。 FIG. 1 is a sectional view of an embodiment of the present invention.
第１図において、ウェハ１１を上方に凹に反らせて配置
し、しかる後に炭素膜２２を成膜し、以後は従来法に従
ってＸ線マスクを完成する。In FIG. 1, a wafer 11 is placed so as to be concavely curved upward, and then a carbon film 22 is formed, and thereafter an X-ray mask is completed according to a conventional method.
第１図に示したウェハの中心部分を除去し、第３図に示
される如く周辺部分のみを残すと、引張り応力によって
炭素膜は平らになろうとし、従来例に見られたしわの発
生が防止されるのである。When the central part of the wafer shown in Figure 1 is removed and only the peripheral part is left as shown in Figure 3, the carbon film tends to flatten due to tensile stress, eliminating the wrinkles seen in the conventional example. It is prevented.
再び第１図を参照して本発明実施例を詳細に説明する。 Referring again to FIG. 1, an embodiment of the present invention will be described in detail.
本発明の方法においては、第１図に示す如くシリコンウ
ェハ１１を凹に反らせてから炭素膜２２を成膜し、しか
る後にウェハ１１を凹に反らせていた外力をはずすもの
である。その結果、炭素膜２２内に引張り応力が発生し
て炭素膜固有の圧縮応力が相殺され、低い引張り応力を
もった炭素膜が成膜される。ここで、炭素膜２２の圧縮
応力（τＣ）は、ウェハ１１を凹に反らせるための仮想
引張り応力（τｔ）よりも十分に小であることが必要で
ある。In the method of the present invention, the silicon wafer 11 is warped in a concave manner as shown in FIG. 1, and then the carbon film 22 is formed, and then the external force that caused the wafer 11 to be warped in the concave manner is removed. As a result, tensile stress is generated within the carbon film 22, canceling out the compressive stress inherent in the carbon film, and a carbon film having low tensile stress is formed. Here, the compressive stress (τC) of the carbon film 22 needs to be sufficiently smaller than the virtual tensile stress (τt) for warping the wafer 11 concavely.
炭素膜の成膜方法には、■陰極結合型低温プラズマ化学
気相成長（ＣＶＤ ”）法があり、この場合、供給ガス
としては炭化水素を単独に、またはそれとアルゴン（Ａ
ｒ）との希釈ガスを用いる方法と、■炭素ターゲットの
バイアススパッタ法があり、後のバイアススパッタ法に
おける供給ガスは、Ａｒ／炭化水素混合ガスかＨ２／Ａ
ｒ混合ガスとする。Carbon film formation methods include the cathode-coupled low-temperature plasma chemical vapor deposition (CVD) method, in which hydrocarbons are used alone or together with argon (A
(r) using a diluent gas, and (2) bias sputtering using a carbon target.
r mixed gas.
凹形のウェハを用意するには、凹型静電チャックを成膜
装置のホルダーとするか、または両面を研磨したウェハ
を用い、その裏面に圧縮応力をもった膜を成膜する。To prepare a concave wafer, a concave electrostatic chuck is used as a holder for a film forming apparatus, or a wafer with both sides polished is used, and a film with compressive stress is deposited on the back surface of the wafer.
このように用意したウェハに炭素膜を２．０μ票の厚さ
に成膜するには、■の方法においては、Ａｒ／（１０％
）ＣＨ１１ガスを用い、成膜装置をＱ、ｌ Ｔｏｒｒの
真空に保ち、パワーは５００−に設定する。■の方法に
よるときは、Ａｒ／ （１０％） ＣＨｇガスを用い、
装置は１０ｍＴｏｒｒの真空、パワーは０．５〜１．０
ｋ−に設定する。しかる後に裏面の圧縮応力膜を除去
し、炭素膜２２の上に、金（Ａｕ）、タングステン（Ｗ
）またはタンタル（Ｔａ）を用いて従来例の場合と同様
に膜厚０．８μＩのＸ線吸収パターンを形成し、引続き
１μｍの膜厚の保護膜をかけ、ウェハの中心部分をＨＦ
／ ＨＮＯ３／ＣＨ３Ｃ０ＯＨ（１： ２ ： １．５
）でバックエツチングし周辺部分１１ａを残してＸ線
マスクを完成する。バックエツチングは、炭素膜２２の
上にＸ線吸収パターンを形成する直前に行ってもよい。In order to form a carbon film with a thickness of 2.0 μm on the wafer prepared in this way, in method (2), Ar/(10%
) Using CH11 gas, the film forming apparatus is kept in a vacuum of Q, l Torr, and the power is set to 500-. When using method (2), use Ar/(10%) CHg gas,
The device has a vacuum of 10 mTorr, and the power is 0.5 to 1.0.
Set to k-. After that, the compressive stress film on the back surface is removed, and gold (Au) and tungsten (W) are deposited on the carbon film 22.
) or tantalum (Ta) to form an X-ray absorption pattern with a film thickness of 0.8 μI as in the conventional example, followed by a protective film with a film thickness of 1 μm, and the central part of the wafer was heated with HF.
/ HNO3/CH3C0OH (1: 2: 1.5
) to complete the X-ray mask leaving the peripheral portion 11a. Back etching may be performed immediately before forming the X-ray absorption pattern on the carbon film 22.
メンブレン（マスク支持体となる膜）は、炭素１１１／
、！リイミドｌｉｔ （膜厚比は１：１）の二重構造に
することも可能である。The membrane (film that serves as a mask support) is made of carbon 111/
,! It is also possible to have a double structure of Liimide (film thickness ratio: 1:1).
本発明に従って作られた炭素膜は、光学的に透明で、Ｈ
ｅ−Ｎｅレーザに対し５０％以上の透過率を示し、Ｐｄ
レーザの透過率は２μ鋼で９３％以上で、高い寸法安定
性をもち、従来のＢＮで作ったメンブレンと比べはるか
に優れたものであることが確認された。Carbon films made according to the present invention are optically transparent and H
It shows transmittance of 50% or more for e-Ne laser, and Pd
It was confirmed that the laser transmittance was 93% or more for the 2μ steel, and that it had high dimensional stability and was far superior to membranes made from conventional BN.
以上述べてきたように、本発明によれば、反りのない光
学的に透明なマスク支持体となるメンブレンが得られ、
それは光学的に従来のＢＮ膜よりもはるかに良好なメン
ブレンである。As described above, according to the present invention, a membrane that serves as an optically transparent mask support without warping can be obtained,
It is an optically much better membrane than conventional BN films.
第１図は本発明実施例の断面図、 第２図はＸ線露光を説明する断面図、 第３図は従来のＸ線マスクの断面図、 第４図は炭素膜の反りを説明する断面図である。 第１図と第２図において、 １１はシリコンウェハ、 １１ａはシリコンウェハの周辺部分、 １３は吸収体パターン、 １４はＸ線マスク、 １７はＡｕ＋ ＴａまたはＷ層、 １８は第２ポリイミド膜、 ２２は炭素膜である。 、！ＪＪ２２ 袂日月ぐ恍例＃ｒ勾囚 第１図 １１↓１ｌｌ Ｘ舖１１尤を説明する前面図 第２図 FIG. 1 is a sectional view of an embodiment of the present invention. Figure 2 is a cross-sectional view explaining X-ray exposure; Figure 3 is a cross-sectional view of a conventional X-ray mask. FIG. 4 is a cross-sectional view illustrating warping of the carbon film. In Figures 1 and 2, 11 is a silicon wafer, 11a is the peripheral part of the silicon wafer; 13 is an absorbent pattern, 14 is an X-ray mask, 17 is Au + Ta or W layer, 18 is a second polyimide film, 22 is a carbon film. ,! JJ22 Case of #r detention Figure 1 11↓1ll Front view to explain the X-11 Figure 2
Claims (1)
体となる膜を成膜し、該膜上にＸ線吸収パターンおよび
保護膜を形成することを含むＸ線マスクを製造するにお
いて、 前記マスク支持体となる膜を、凹形に反らしたシリコン
ウェハ（１１）上に炭素膜（２２）を成膜して形成する
ことを特徴とするＸ線マスクの製造方法。[Claims] An X-ray mask is manufactured by forming a film to serve as a mask support on a silicon wafer from which a central portion has been removed, and forming an X-ray absorption pattern and a protective film on the film. A method for manufacturing an X-ray mask, characterized in that the film serving as the mask support is formed by depositing a carbon film (22) on a silicon wafer (11) warped into a concave shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60086803A JPS61245160A (en) | 1985-04-23 | 1985-04-23 | Manufacture of x-ray mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60086803A JPS61245160A (en) | 1985-04-23 | 1985-04-23 | Manufacture of x-ray mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61245160A true JPS61245160A (en) | 1986-10-31 |
Family
ID=13896955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60086803A Pending JPS61245160A (en) | 1985-04-23 | 1985-04-23 | Manufacture of x-ray mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61245160A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4998267A (en) * | 1988-07-28 | 1991-03-05 | Korea Electronics & Telecommunications Research Inst. | X-ray lithography carbon mask and method of manufacturing the same |
| US5003567A (en) * | 1989-02-09 | 1991-03-26 | Hawryluk Andrew M | Soft x-ray reduction camera for submicron lithography |
-
1985
- 1985-04-23 JP JP60086803A patent/JPS61245160A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4998267A (en) * | 1988-07-28 | 1991-03-05 | Korea Electronics & Telecommunications Research Inst. | X-ray lithography carbon mask and method of manufacturing the same |
| US5003567A (en) * | 1989-02-09 | 1991-03-26 | Hawryluk Andrew M | Soft x-ray reduction camera for submicron lithography |
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