JPS5935098A - 強誘電性薄膜 - Google Patents
強誘電性薄膜Info
- Publication number
- JPS5935098A JPS5935098A JP57142518A JP14251882A JPS5935098A JP S5935098 A JPS5935098 A JP S5935098A JP 57142518 A JP57142518 A JP 57142518A JP 14251882 A JP14251882 A JP 14251882A JP S5935098 A JPS5935098 A JP S5935098A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- electro
- ferroelectric thin
- ferroelectric
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 8
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 5
- 239000010980 sapphire Substances 0.000 claims abstract description 5
- 239000010936 titanium Substances 0.000 claims description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 10
- 230000005693 optoelectronics Effects 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000000843 powder Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Insulating Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57142518A JPS5935098A (ja) | 1982-08-17 | 1982-08-17 | 強誘電性薄膜 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57142518A JPS5935098A (ja) | 1982-08-17 | 1982-08-17 | 強誘電性薄膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5935098A true JPS5935098A (ja) | 1984-02-25 |
| JPH0333680B2 JPH0333680B2 (enrdf_load_stackoverflow) | 1991-05-17 |
Family
ID=15317217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57142518A Granted JPS5935098A (ja) | 1982-08-17 | 1982-08-17 | 強誘電性薄膜 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5935098A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61274342A (ja) * | 1985-05-29 | 1986-12-04 | Ube Ind Ltd | 強誘電体素子およびその製造法 |
| US4927513A (en) * | 1988-01-09 | 1990-05-22 | Leybold Aktiengesellschaft | Method and arrangement for fabricating magneto-optical, storable, and/or deletable data carriers |
| US5070026A (en) * | 1989-06-26 | 1991-12-03 | Spire Corporation | Process of making a ferroelectric electronic component and product |
| US5368915A (en) * | 1991-08-30 | 1994-11-29 | Sharp Kabushiki Kaisha | Active matrix substrate |
| US10697090B2 (en) | 2017-06-23 | 2020-06-30 | Panasonic Intellectual Property Management Co., Ltd. | Thin-film structural body and method for fabricating thereof |
-
1982
- 1982-08-17 JP JP57142518A patent/JPS5935098A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61274342A (ja) * | 1985-05-29 | 1986-12-04 | Ube Ind Ltd | 強誘電体素子およびその製造法 |
| US4927513A (en) * | 1988-01-09 | 1990-05-22 | Leybold Aktiengesellschaft | Method and arrangement for fabricating magneto-optical, storable, and/or deletable data carriers |
| US5070026A (en) * | 1989-06-26 | 1991-12-03 | Spire Corporation | Process of making a ferroelectric electronic component and product |
| US5368915A (en) * | 1991-08-30 | 1994-11-29 | Sharp Kabushiki Kaisha | Active matrix substrate |
| US10697090B2 (en) | 2017-06-23 | 2020-06-30 | Panasonic Intellectual Property Management Co., Ltd. | Thin-film structural body and method for fabricating thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0333680B2 (enrdf_load_stackoverflow) | 1991-05-17 |
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