JPS5934640A - 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法 - Google Patents

絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法

Info

Publication number
JPS5934640A
JPS5934640A JP57143994A JP14399482A JPS5934640A JP S5934640 A JPS5934640 A JP S5934640A JP 57143994 A JP57143994 A JP 57143994A JP 14399482 A JP14399482 A JP 14399482A JP S5934640 A JPS5934640 A JP S5934640A
Authority
JP
Japan
Prior art keywords
insulating materials
semiconductor films
crystallization method
coarse grain
grain formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57143994A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0232747B2 (enrdf_load_stackoverflow
Inventor
Kenji Shibata
健二 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57143994A priority Critical patent/JPS5934640A/ja
Publication of JPS5934640A publication Critical patent/JPS5934640A/ja
Publication of JPH0232747B2 publication Critical patent/JPH0232747B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Electron Sources, Ion Sources (AREA)
JP57143994A 1982-08-21 1982-08-21 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法 Granted JPS5934640A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57143994A JPS5934640A (ja) 1982-08-21 1982-08-21 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57143994A JPS5934640A (ja) 1982-08-21 1982-08-21 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法

Publications (2)

Publication Number Publication Date
JPS5934640A true JPS5934640A (ja) 1984-02-25
JPH0232747B2 JPH0232747B2 (enrdf_load_stackoverflow) 1990-07-23

Family

ID=15351834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57143994A Granted JPS5934640A (ja) 1982-08-21 1982-08-21 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法

Country Status (1)

Country Link
JP (1) JPS5934640A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245864A (en) * 1975-10-08 1977-04-11 Mitsubishi Electric Corp Electronic beam generating hot cathode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245864A (en) * 1975-10-08 1977-04-11 Mitsubishi Electric Corp Electronic beam generating hot cathode

Also Published As

Publication number Publication date
JPH0232747B2 (enrdf_load_stackoverflow) 1990-07-23

Similar Documents

Publication Publication Date Title
US5371381A (en) Process for producing single crystal semiconductor layer and semiconductor device produced by said process
US4596604A (en) Method of manufacturing a multilayer semiconductor device
JP2020061582A (ja) 半導体素子
JPH0410216B2 (enrdf_load_stackoverflow)
KR900002686B1 (ko) 열전도 제어층을 사용하여 간접가열 함으로써 도전성막을 재결정화하는 방법
JP2004140326A (ja) 薄膜表面の平坦化方法
JPS5934640A (ja) 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法
JPS6329819B2 (enrdf_load_stackoverflow)
US4549913A (en) Wafer construction for making single-crystal semiconductor device
JPH0722315A (ja) 半導体膜の製造方法
GB2153700A (en) Crystal growth
JPS6018913A (ja) 半導体装置の製造方法
JPH04380B2 (enrdf_load_stackoverflow)
JPH0136972B2 (enrdf_load_stackoverflow)
JPS62219510A (ja) 単結晶島状領域の形成方法
JPS5821854A (ja) 半導体回路素子
JP2695462B2 (ja) 結晶性半導体膜及びその形成方法
JP2703334B2 (ja) 半導体装置の製造方法
JPH02863B2 (enrdf_load_stackoverflow)
JPS63265464A (ja) 半導体装置の製造方法
JP2526380B2 (ja) 多層半導体基板の製造方法
JPS6297318A (ja) 半導体装置
JPH0257337B2 (enrdf_load_stackoverflow)
JPS62243314A (ja) 半導体装置の製造方法
JPS6054426A (ja) 半導体素子の製造方法