JPS5934628A - 半導体薄膜製造法 - Google Patents

半導体薄膜製造法

Info

Publication number
JPS5934628A
JPS5934628A JP14465082A JP14465082A JPS5934628A JP S5934628 A JPS5934628 A JP S5934628A JP 14465082 A JP14465082 A JP 14465082A JP 14465082 A JP14465082 A JP 14465082A JP S5934628 A JPS5934628 A JP S5934628A
Authority
JP
Japan
Prior art keywords
semiconductor thin
adduct
group
substrates
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14465082A
Other languages
English (en)
Japanese (ja)
Other versions
JPS639742B2 (enrdf_load_stackoverflow
Inventor
Naoki Kobayashi
直樹 小林
Takashi Fukui
孝志 福井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14465082A priority Critical patent/JPS5934628A/ja
Publication of JPS5934628A publication Critical patent/JPS5934628A/ja
Publication of JPS639742B2 publication Critical patent/JPS639742B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
JP14465082A 1982-08-23 1982-08-23 半導体薄膜製造法 Granted JPS5934628A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14465082A JPS5934628A (ja) 1982-08-23 1982-08-23 半導体薄膜製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14465082A JPS5934628A (ja) 1982-08-23 1982-08-23 半導体薄膜製造法

Publications (2)

Publication Number Publication Date
JPS5934628A true JPS5934628A (ja) 1984-02-25
JPS639742B2 JPS639742B2 (enrdf_load_stackoverflow) 1988-03-01

Family

ID=15367010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14465082A Granted JPS5934628A (ja) 1982-08-23 1982-08-23 半導体薄膜製造法

Country Status (1)

Country Link
JP (1) JPS5934628A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0198219A (ja) * 1987-10-09 1989-04-17 Matsushita Electric Works Ltd 化合物半導体薄膜の製法
JPH0445065A (ja) * 1990-06-08 1992-02-14 Teijin Seiki Co Ltd クロスワインド捲糸体の捲取方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0198219A (ja) * 1987-10-09 1989-04-17 Matsushita Electric Works Ltd 化合物半導体薄膜の製法
JPH0445065A (ja) * 1990-06-08 1992-02-14 Teijin Seiki Co Ltd クロスワインド捲糸体の捲取方法

Also Published As

Publication number Publication date
JPS639742B2 (enrdf_load_stackoverflow) 1988-03-01

Similar Documents

Publication Publication Date Title
JPS61127121A (ja) 薄膜形成方法
JPS5934628A (ja) 半導体薄膜製造法
JPS59223294A (ja) 気相成長装置
JPS59215728A (ja) 半導体表面の光洗浄方法
JPS60131968A (ja) 気相成長装置
US3900363A (en) Method of making crystal
CA1280055C (en) Vapor deposition apparatus
SU1074161A1 (ru) Устройство дл газовой эпитаксии полупроводниковых соединений
JPS61155291A (ja) 気相成長方法
JPS58115816A (ja) 化合物半導体気相成長装置
JPH0364465A (ja) 有機金属気相成長法
JPS61220416A (ja) 化学気相成長法
JP3063317B2 (ja) 半導体薄膜の気相成長方法
JPH04364720A (ja) 有機金属化学気相成長方法およびその装置
JPS6389491A (ja) 気相成長装置
JPH01297817A (ja) ３−５族化合物半導体気相成長方法
JPS62291021A (ja) 気相成長装置
JPH0243720A (ja) 分子線エピタキシャル成長方法
JPH0562916A (ja) 気相成長方法
JPS61114519A (ja) 気相成長装置
JPS62119919A (ja) 化合物半導体の結晶成長装置
JPS63119521A (ja) 有機金属気相成長装置
JPS58132921A (ja) 気相成長方法
JPS62230693A (ja) 気相成長装置
JPS6325294A (ja) 有機金属化学気相成長方法