JPS5934148Y2 - bidirectional thyristor - Google Patents

bidirectional thyristor

Info

Publication number
JPS5934148Y2
JPS5934148Y2 JP1978082797U JP8279778U JPS5934148Y2 JP S5934148 Y2 JPS5934148 Y2 JP S5934148Y2 JP 1978082797 U JP1978082797 U JP 1978082797U JP 8279778 U JP8279778 U JP 8279778U JP S5934148 Y2 JPS5934148 Y2 JP S5934148Y2
Authority
JP
Japan
Prior art keywords
aluminum
connector
pellet
metal layer
bidirectional thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1978082797U
Other languages
Japanese (ja)
Other versions
JPS54183287U (en
Inventor
宏亮 高橋
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP1978082797U priority Critical patent/JPS5934148Y2/en
Publication of JPS54183287U publication Critical patent/JPS54183287U/ja
Application granted granted Critical
Publication of JPS5934148Y2 publication Critical patent/JPS5934148Y2/en
Expired legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Wire Bonding (AREA)

Description

【考案の詳細な説明】 本考案は双方向性サイリスタにかかり、とくに双方向性
サイリスタの電流導出リード接続構造に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bidirectional thyristor, and more particularly to a current lead connection structure for a bidirectional thyristor.

従来小形サイリスタにおいてはサイリスタペレット下面
を金属ベース上にろう接し次にペレット上面よりコネク
ターリードを取出すに金又はアルミニューム線か゛多く
用いられておりこれらコネクターを熱圧着又は超音波溶
接にてペレット面に接続することが一般に行われている
が、一方電流容量がＩＯＡ以上の場合はかかる点接触で
はサージ電流破壊耐量が低下するため銅又は銀リードを
半田付にて取付けるのが一般的である。Conventionally, in small thyristors, the bottom surface of the thyristor pellet is brazed onto the metal base, and then gold or aluminum wire is often used to take out the connector lead from the top surface of the pellet.These connectors are attached to the pellet surface by thermocompression bonding or ultrasonic welding. However, when the current capacity is IOA or more, the surge current breakdown resistance decreases with such point contact, so it is common to attach copper or silver leads by soldering.

しかるにかようなリード線接続法は製造工程中の高速化
、自動化が難しく中電流サイリスタ製造上の最大の難点
であった。However, such a lead wire connection method is difficult to speed up and automate during the manufacturing process, which is the biggest difficulty in manufacturing medium current thyristors.

特に双方向性サイリスクに於ては一ペレット内に二ヶの
サイリスタを有しているために、両サイリスタに確実に
コネクターリードを取付けることを要する。In particular, since bidirectional thyristors have two thyristors in one pellet, it is necessary to securely attach connector leads to both thyristors.

本考案の目的はかかる従来の中電流サイリスタの製造上
の欠点を除去し、より確実にコネクターリードを接続し
且つより自動化容易な構造を提供しようとするものであ
る。The purpose of the present invention is to eliminate the manufacturing disadvantages of such conventional medium current thyristors, provide a structure that connects connector leads more reliably, and is easier to automate.

本考案の特徴はｐｎｐｎ （又は叩叩）の４層よりなる
第１の半導体部分及び該第−の半導体部分とは逆順序の
叩叩（又はｐｎｐｎ）の４層よりなる第二の半導体部分
を有する双方向性サイリスタペレットを有し、このペレ
ットの第一主面は電極を兼ねる金属又はセラミック放熱
体にとりつけられており且つこのペレットの第二主面に
はアルミニューム又はアルミニュームを含む金属層が被
着されており該アルミニューム金属層と外部電流端子と
がアルミニュームを主材料とする金属線コネクターにて
接続されてなる双方向性サイリスタにおいて、アルミニ
ューム金属層の厚みが５〜２０μｍとせられ、且つ前記
コネクターが該アルミニューム金属層の前記第一の半導
体部分を主とする位置及び前記第二の半導体部分を主と
する位置の二点以上にて、連続的に接続せられその接続
点数当りの前記アルミニューム金属層の面積が４ｍｍ２
以下としたことになる。The feature of the present invention is that the first semiconductor part is composed of four pnpn (or pnpn) layers and the second semiconductor part is composed of four pnpn pnpn layers in the reverse order of the second semiconductor part. The pellet has a bidirectional thyristor pellet having a first main surface attached to a metal or ceramic heat sink that also serves as an electrode, and a second main surface of the pellet having a layer of aluminum or a metal layer containing aluminum. In a bidirectional thyristor in which the aluminum metal layer is coated with an external current terminal and the aluminum metal layer is connected to an external current terminal by a metal wire connector mainly made of aluminum, the aluminum metal layer has a thickness of 5 to 20 μm. and the connector is continuously connected at two or more points of the aluminum metal layer, ie, a position mainly at the first semiconductor portion and a position mainly at the second semiconductor portion. The area of the aluminum metal layer per point is 4 mm2
The following will be done.

次に図面により本考案を説明する。Next, the present invention will be explained with reference to the drawings.

第１図は従来の双方向性サイリスタの構造図である。FIG. 1 is a structural diagram of a conventional bidirectional thyristor.

図中１はｐｎｐｎ及び叩ｎｐ構造を有するペレットであ
り、このペレット１にはニッケル等よりなる金属電極２
，３が蒸着、メッキ等により被着せられており、この電
極部２，３は半田層４，５によって金属ベース６、コネ
クターリード７．８にろう接されており、コネクタリー
ド７．８は外部導出リード９．１０に電気溶接等によっ
て接続せられ、且つこれら構造物全体が一樹脂１１によ
ってモードされている。In the figure, 1 is a pellet having a pnpn and beaten np structure, and this pellet 1 has a metal electrode 2 made of nickel or the like.
, 3 are coated by vapor deposition, plating, etc., and the electrode parts 2, 3 are soldered to the metal base 6 and the connector lead 7.8 by the solder layers 4, 5, and the connector lead 7.8 is connected to the outside. It is connected to lead-out leads 9 and 10 by electric welding or the like, and the entire structure is made of one resin 11.

これに対し第２，３図は本考案の一実施例の構造を示し
ている。On the other hand, FIGS. 2 and 3 show the structure of an embodiment of the present invention.

即ち第２図ａ、ｌ）の双方向性サイリスタペレット１１
にアルミニューム層２Ａ、２Ｂ。That is, the bidirectional thyristor pellet 11 of FIG. 2 a, l)
aluminum layers 2A and 2B.

１３が５〜２０μｍ蒸着にて被着せしめられている。13 is deposited by vapor deposition to a thickness of 5 to 20 μm.

ここで２Ａは第１のサイリスタ部、２Ｂは第２のサイリ
スタ部、１３は制御電極部である。Here, 2A is a first thyristor section, 2B is a second thyristor section, and 13 is a control electrode section.

この蒸着面に主電流コネクターリード１４、制御電極コ
ネクターリード１５が、接続部分１６，１７．１８にお
いて超音波溶接せられている。A main current connector lead 14 and a control electrode connector lead 15 are ultrasonically welded to this vapor deposition surface at connecting portions 16, 17, and 18.

第３図は第２図の構造のペレット及び電極リード構造に
て第１図と同様の半導体装置を形成した時の構造を示す
。FIG. 3 shows a structure when a semiconductor device similar to that in FIG. 1 is formed using the pellet and electrode lead structure of FIG. 2.

ここでアルミニューム電極層２Ａ、２Ｂの厚みは厚い方
が当然電流容量的には有利であるが、２０μｍ以上に厚
くなると超音波溶接性が悪くなり、且つペレットの基板
たるシリコンとの熱膨張率差のためにペレット製造工程
での歩留が低下する。The thicker the aluminum electrode layers 2A and 2B, the better the current capacity, but if the thickness exceeds 20 μm, the ultrasonic weldability deteriorates, and the thermal expansion coefficient of the pellet with respect to silicon, which is the substrate, deteriorates. The difference reduces yield in the pellet manufacturing process.

他方このアルミニューム電極層２Ａ、２Ｂの厚みが薄け
れば上記の問題点は解決されるが電流がアルミニューム
層をコネクタ接続部１６．１７に向って横方向に流れる
時の抵抗成分のためにサージ電流耐量が弱くなり、且つ
アルミニューム層内電流密度が高くなるためにエレクト
ロマイグレーション現象が表出し易くなる。On the other hand, if the aluminum electrode layers 2A and 2B were thinner, the above problem would be solved, but due to the resistance component when the current flows laterally through the aluminum layer toward the connector connection part 16, 17. Since the surge current withstand capacity becomes weaker and the current density within the aluminum layer becomes higher, electromigration phenomenon becomes more likely to occur.

このためアルミニューム電極層２Ａ。２Ｂの厚みの下限
はコネクター接続点のまわりのアルミニューム層の電流
密度により制限を受ける。For this reason, the aluminum electrode layer 2A is used. The lower limit on the thickness of 2B is limited by the current density of the aluminum layer around the connector connection points.

この点に関する実験結果により５μｍのアルミニューム
厚みに下限を抑え、且つ最大４ｍｍ２のアルミニューム
電極層に対して一点のコネクター接続点を具備せしめれ
ば通常の半導体応用上支障なく使用できることがわかっ
た。Experimental results regarding this point have revealed that it can be used without any problems in normal semiconductor applications if the lower limit of the aluminum thickness is kept at 5 μm and one connector connection point is provided for an aluminum electrode layer with a maximum thickness of 4 mm2.

この際コネクターリードは一般にサージ電流耐量に充分
耐える断面積を要し、１０〜２０Ａ級半導体装置におい
ては直径３００〜４５０μｍの線（又はこれに相当する
断面積のコネクター）が好適である。In this case, the connector lead generally requires a cross-sectional area sufficient to withstand surge current, and a wire with a diameter of 300-450 μm (or a connector with a cross-sectional area equivalent to this) is suitable for a 10-20 A class semiconductor device.

即ち更に詳細に記載するならば前記アルミニューム層の
厚み及び面積に対するコネクター接続点６，７の面積は
０．１ｍｍ２程度ないしそれ以上あることが前提と言え
る。That is, to describe it in more detail, it can be said that it is a prerequisite that the area of the connector connection points 6 and 7 is about 0.1 mm<2 >or more than the thickness and area of the aluminum layer.

ここで双方向性サイリスクの場合は電流がＡ、Ｂ両すイ
リスク部分に同時に流れることは一般にないためコネク
ターリード接続点はＡ、Ｂ両すイリスターに夫々あるこ
とが好ましい。In the case of a bidirectional iris, it is generally not the case that current flows through both the A and B iris at the same time, so it is preferable that the connector lead connection points be located in both the A and B iris.

しかし乍ら製造上コネクターリードを２本設けることは
次の点で不利である。However, providing two connector leads in manufacturing is disadvantageous in the following points.

即ちコネクターリードを多くつける装置はそれだけ複雑
になり高価になる上に処理能力が低下する。That is, a device that attaches a large number of connector leads becomes more complicated and expensive, and its processing capacity decreases.

本考案の他の重要な点は、電極リードを可能な限り低減
する為に二点以上の位置にてコネクター接続することで
ある。Another important aspect of the present invention is to connect the connector at two or more points to reduce the number of electrode leads as much as possible.

この構造は双方向性サイリスタの主電流コネクターを一
本のみにするに有効である。This structure is effective in reducing the number of main current connectors of bidirectional thyristors to only one.

以上本考案を第２、第３図にて説明したが本考案による
半導体装置は以上の説明にて明らかなる如く次のような
利益が得られる。The present invention has been described above with reference to FIGS. 2 and 3. As is clear from the above description, the semiconductor device according to the present invention has the following advantages.

第一に、中電流サイリスタ以上の半導体装置に対し小電
流サイリスタと同様の高能率製造装置を使用することが
できる。First, high-efficiency manufacturing equipment similar to that used for small current thyristors can be used for semiconductor devices of medium current thyristors or higher.

特にこの利点は双方向性サイリスタにとって有効である
。This advantage is particularly valid for bidirectional thyristors.

第二に、ペレット電極層及びコネクターリードをアルミ
ニューム又はアルミニュームを主とする材料を使用する
ことによって安価となる上に、アルミニューム−アルミ
ニュームコンタクトの如く信頼性的に有利な組合せが可
能となり従来の半田付方式に比較して断続通電耐量が著
しく向上する。Second, by using aluminum or aluminum-based materials for the pellet electrode layer and the connector lead, it is not only cheaper, but also allows combinations that are advantageous in terms of reliability, such as aluminum-aluminum contacts. Intermittent current carrying capacity is significantly improved compared to conventional soldering methods.

以上本考案を第２，３図に用いて説明したが、第４図の
如く本考案によるコネクターリード１４と他のコネクタ
ーリード１９を組合せて使用することもできる。Although the present invention has been described above using FIGS. 2 and 3, it is also possible to use the connector lead 14 according to the present invention in combination with another connector lead 19 as shown in FIG. 4.

又コネクターリード１４の形のものを２本以上具備して
もよい。Also, two or more connector leads 14 may be provided.

又アルミニューム層２Ａ、Ｂは単一のアルミニューム金
属以外にシリコン等の他の材料が含まれていてよく、又
アルミニュームとペレットとの間に他の金属層が一挿入
されてもよい。Further, the aluminum layers 2A and 2B may contain other materials such as silicon in addition to the single aluminum metal, and another metal layer may be inserted between the aluminum and the pellet.

又第２．３．４図は制御電極を有する。FIG. 2.3.4 also has a control electrode.

いわゆるトライアックにて説明したが制御電極のないい
わゆるＳＳＳ等の構造にても本考案を適用することがで
きる。Although the description has been made using a so-called TRIAC, the present invention can also be applied to a structure such as a so-called SSS without a control electrode.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の樹脂モールド型の双方向サイリスタの断
面図である。 第２図はａ、ｌ）はそれぞれ本考案の一実施例による電
極接続を示す拡大平面図である。 第３図は本考案の一実施例の樹脂モールド型の双方向サ
イリスタを示す断面図である。 第４図は本考案の他の実施例における電極接続を示す拡
大平面図である。 符号の説明 １・・・・・・ペレット、２，３・・・・
・・電極部、４，５・・・・・・半田層、６・・・・・
・金属ベース、７，８・・・・・・コネクタリード、９
，１０・・・・・・外部導出リード、１１・・・・・・
樹脂、２Ａ・・・・・・第１のサイリスタ部、２Ｂ・・
・・・・第２のサイリスタ、１１，１１！３００００．
ペレット、１３・・開制御電極部、１４・・・・・・コ
ネクターリード、１５・・・・・・制御電極コネクター
ノード、１６，１７．１８・・・・・・接続部、１９・
・・・・・他のコネクターリード、２０・・・・・・他
の接続部である。FIG. 1 is a sectional view of a conventional resin molded bidirectional thyristor. FIGS. 2A and 2L are enlarged plan views showing electrode connections according to an embodiment of the present invention, respectively. FIG. 3 is a sectional view showing a resin molded bidirectional thyristor according to an embodiment of the present invention. FIG. 4 is an enlarged plan view showing electrode connections in another embodiment of the present invention. Explanation of symbols 1... Pellet, 2, 3...
... Electrode part, 4, 5 ... Solder layer, 6 ...
・Metal base, 7, 8... Connector lead, 9
, 10... External lead-out lead, 11...
Resin, 2A...First thyristor part, 2B...
...Second thyristor, 11,11!30000.
Pellet, 13... Open control electrode part, 14... Connector lead, 15... Control electrode connector node, 16, 17. 18... Connection part, 19...
. . . Other connector lead, 20 . . . Other connection parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ｐｎｐｎ （又はｎｐｎｐ）の４層よりなる第１の半導
体部分及び該第１の半導体部分とは逆順序の叩叩（又は
ｐｎｐｎ）の４層よりなる第２の半導体部分を有する双
方向性サイリスタペレットを有した双方向性サイリスタ
において、前記ペレットの１主面にはアルミニュームを
含む金属層が被着されており、該金属層と外部端子とが
アルミニュームを主材料とする金属線コネクターにて接
続され、前記金属層の厚みが５〜２０μｍとせられ、且
つ前記コネクターが前記金属層の前記第１の半導体部分
を主とする位置及び前記第２の半導体部分を主とする位
置の二点以上にて連続的に接続せられその接続点数当り
の前記金属層の面積が４ｍｍ２以下とせられたことを特
徴とする双方向性サイリスタ。A bidirectional thyristor pellet having a first semiconductor portion consisting of four layers of pnpn (or npnp) and a second semiconductor portion consisting of four layers of pnpn (or pnpn) in the reverse order of the first semiconductor portion. In the bidirectional thyristor, a metal layer containing aluminum is adhered to one main surface of the pellet, and the metal layer and the external terminal are connected by a metal wire connector mainly made of aluminum. connected, the thickness of the metal layer is 5 to 20 μm, and the connector is located at two or more points of the metal layer, such as a position mainly at the first semiconductor portion and a position mainly at the second semiconductor portion. A bidirectional thyristor, characterized in that the area of the metal layer per number of connection points is 4 mm2 or less.
JP1978082797U 1978-06-15 1978-06-15 bidirectional thyristor Expired JPS5934148Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1978082797U JPS5934148Y2 (en) 1978-06-15 1978-06-15 bidirectional thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1978082797U JPS5934148Y2 (en) 1978-06-15 1978-06-15 bidirectional thyristor

Publications (2)

Publication Number Publication Date
JPS54183287U JPS54183287U (en) 1979-12-26
JPS5934148Y2 true JPS5934148Y2 (en) 1984-09-21

Family

ID=29003983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1978082797U Expired JPS5934148Y2 (en) 1978-06-15 1978-06-15 bidirectional thyristor

Country Status (1)

Country Link
JP (1) JPS5934148Y2 (en)

Also Published As

Publication number Publication date
JPS54183287U (en) 1979-12-26

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