JPS5931085A - 半導体レ−ザの製造方法 - Google Patents

半導体レ−ザの製造方法

Info

Publication number
JPS5931085A
JPS5931085A JP57141407A JP14140782A JPS5931085A JP S5931085 A JPS5931085 A JP S5931085A JP 57141407 A JP57141407 A JP 57141407A JP 14140782 A JP14140782 A JP 14140782A JP S5931085 A JPS5931085 A JP S5931085A
Authority
JP
Japan
Prior art keywords
silicon
gold
semiconductor laser
chip
submount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57141407A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0140514B2 (enrdf_load_html_response
Inventor
Yoshito Ikuwa
生和　義人
Shoichi Kakimoto
柿本　昇一
Shigeyuki Nitsuta
仁田　重之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57141407A priority Critical patent/JPS5931085A/ja
Publication of JPS5931085A publication Critical patent/JPS5931085A/ja
Publication of JPH0140514B2 publication Critical patent/JPH0140514B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Semiconductor Lasers (AREA)
JP57141407A 1982-08-13 1982-08-13 半導体レ−ザの製造方法 Granted JPS5931085A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57141407A JPS5931085A (ja) 1982-08-13 1982-08-13 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57141407A JPS5931085A (ja) 1982-08-13 1982-08-13 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS5931085A true JPS5931085A (ja) 1984-02-18
JPH0140514B2 JPH0140514B2 (enrdf_load_html_response) 1989-08-29

Family

ID=15291283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57141407A Granted JPS5931085A (ja) 1982-08-13 1982-08-13 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS5931085A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6920164B2 (en) * 2000-03-01 2005-07-19 Hamamatsu Photonics K.K. Semiconductor laser device
JP2013004571A (ja) * 2011-06-13 2013-01-07 Hamamatsu Photonics Kk 半導体レーザ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6920164B2 (en) * 2000-03-01 2005-07-19 Hamamatsu Photonics K.K. Semiconductor laser device
JP2013004571A (ja) * 2011-06-13 2013-01-07 Hamamatsu Photonics Kk 半導体レーザ装置

Also Published As

Publication number Publication date
JPH0140514B2 (enrdf_load_html_response) 1989-08-29

Similar Documents

Publication Publication Date Title
US5217922A (en) Method for forming a silicide layer and barrier layer on a semiconductor device rear surface
US6354485B1 (en) Thermally enhanced packaged semiconductor assemblies
CN100390977C (zh) 半导体器件及其制造方法
JPS632332A (ja) ダイボンデイングプロセス
JPS6187396A (ja) 電子回路装置とその製造方法
JPS58107295A (ja) ろう合金
JP2002527892A (ja) 基板に半導体チップを半田付けする方法と、この方法によって製造されるデバイス
JP3346971B2 (ja) 光半導体素子用サブマウントおよびそのマウント方法
KR960039235A (ko) 열방열 핀을 구비한 내부 리드 본딩 장치 및 이를 이용한 내부 리드 본딩 방법
US3293509A (en) Semiconductor devices with terminal contacts and method of their production
JPH02504572A (ja) 装置取付け方法
JPS5931085A (ja) 半導体レ−ザの製造方法
US3585711A (en) Gold-silicon bonding process
JPS62209843A (ja) 電子回路のハウジング
JPH0133278B2 (enrdf_load_html_response)
JPS6153851B2 (enrdf_load_html_response)
JP3336822B2 (ja) はんだ付け方法
JPH05152485A (ja) 半導体装置およびその製造方法
JPS6010633A (ja) 半導体装置
JP2521624Y2 (ja) 半導体装置
JPS6129161A (ja) 熱伝導冷却モジユ−ル装置
Hilleringmann Packaging of Integrated Circuits
JPS60143636A (ja) 電子部品
JPH02146748A (ja) 半導体容器
JP3070176B2 (ja) 窒化アルミニウム基板と銅板の接合方法