JPS5931071A - 電界効果トランジスタ - Google Patents

電界効果トランジスタ

Info

Publication number
JPS5931071A
JPS5931071A JP57139686A JP13968682A JPS5931071A JP S5931071 A JPS5931071 A JP S5931071A JP 57139686 A JP57139686 A JP 57139686A JP 13968682 A JP13968682 A JP 13968682A JP S5931071 A JPS5931071 A JP S5931071A
Authority
JP
Japan
Prior art keywords
layer
quasi
gaas
electrons
approx
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57139686A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6255314B2 (enExample
Inventor
Haruhisa Kinoshita
木下　治久
Seiji Nishi
清次 西
Yoshiaki Sano
佐野　芳明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP57139686A priority Critical patent/JPS5931071A/ja
Publication of JPS5931071A publication Critical patent/JPS5931071A/ja
Publication of JPS6255314B2 publication Critical patent/JPS6255314B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57139686A 1982-08-13 1982-08-13 電界効果トランジスタ Granted JPS5931071A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57139686A JPS5931071A (ja) 1982-08-13 1982-08-13 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57139686A JPS5931071A (ja) 1982-08-13 1982-08-13 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5931071A true JPS5931071A (ja) 1984-02-18
JPS6255314B2 JPS6255314B2 (enExample) 1987-11-19

Family

ID=15251063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57139686A Granted JPS5931071A (ja) 1982-08-13 1982-08-13 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS5931071A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4575924A (en) * 1984-07-02 1986-03-18 Texas Instruments Incorporated Process for fabricating quantum-well devices utilizing etch and refill techniques
JPS61239267A (ja) * 1985-04-17 1986-10-24 Fuji Xerox Co Ltd カラ−複写機の現像装置
JPS6230380A (ja) * 1985-03-11 1987-02-09 Nippon Telegr & Teleph Corp <Ntt> 電界効果型トランジスタ
EP0283276A3 (en) * 1987-03-20 1988-11-09 Fujitsu Limited Semiconductor device having heterojunction and method for producing same
EP0262610A3 (en) * 1986-09-29 1989-02-15 Siemens Aktiengesellschaft Two-dimensional electron gas switching device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4575924A (en) * 1984-07-02 1986-03-18 Texas Instruments Incorporated Process for fabricating quantum-well devices utilizing etch and refill techniques
JPS6230380A (ja) * 1985-03-11 1987-02-09 Nippon Telegr & Teleph Corp <Ntt> 電界効果型トランジスタ
JPS61239267A (ja) * 1985-04-17 1986-10-24 Fuji Xerox Co Ltd カラ−複写機の現像装置
EP0262610A3 (en) * 1986-09-29 1989-02-15 Siemens Aktiengesellschaft Two-dimensional electron gas switching device
EP0283276A3 (en) * 1987-03-20 1988-11-09 Fujitsu Limited Semiconductor device having heterojunction and method for producing same

Also Published As

Publication number Publication date
JPS6255314B2 (enExample) 1987-11-19

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