JPS5929288A - Electrooptic apparatus - Google Patents
Electrooptic apparatusInfo
- Publication number
- JPS5929288A JPS5929288A JP57140076A JP14007682A JPS5929288A JP S5929288 A JPS5929288 A JP S5929288A JP 57140076 A JP57140076 A JP 57140076A JP 14007682 A JP14007682 A JP 14007682A JP S5929288 A JPS5929288 A JP S5929288A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- metal electrode
- electrode
- pixel
- pixel electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims description 22
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は液晶表示装置に非線形素子を組合せた電気光学
装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electro-optical device that combines a liquid crystal display device with a nonlinear element.
近年、液晶表示装置の応用が進み、腕時計、電卓をはじ
め各種情報機器にまで用いられるようになっだが、さら
に液晶表示装置の表示容量を増大させるために金属−絶
縁体−金属（Ｍｅｔａｌ −工ｎｅｕｌａｔｏｒ
−Ｍｅｔａｌ 略してＭ工Ｍ）構造を有する非線形素
子（以下Ｍ工Ｍ素子と呼ぶ）を画素電極と結合し表示特
性を向上させる方法が検討されている。In recent years, the application of liquid crystal display devices has progressed, and they have come to be used in wristwatches, calculators, and various other information devices.However, in order to further increase the display capacity of liquid crystal display devices, metal-insulator-metal
-Metal A method of improving display characteristics by combining a nonlinear element (hereinafter referred to as an M element) having a structure with a pixel electrode has been studied.
従来は第１図に断面を含んだＭ工Ｍ素子部分の見取図、
第２図に１画素分のＭ］：Ｍ素子及び画素′Ｆ！１極８
の平面配置を示すように、基板３上に酸化膜４を設はエ
ッチストップとした後、Ｍ工Ｍ素子の一方の金属電極５
となる金属を形成、バターニングする。次にこの金属電
極５の表面に＠極酸化等で酸化膜６を形成する。次にＭ
工Ｍ素子の他方の金属電極７を形成しさらに透明導電性
薄膜で画素電極８を形成するといった製造順序を用いて
いた。ここで、Ｍ工Ｍ素子の金属ｍ！７としては、素子
の特性上Ｎ ｉ −Ｏｒ合金やＯｒを用いることが多く
、その場合金属電極７表面に自然酸化膜が出来、Ｎ ｉ
−Ｏｒ合金あるいはＯｒのままでは画素電極８との電
気的接触が非オーミツクになってしまうために、Ｎ ｉ
−Ｏｒ合金あるいはＯｒの上部にＡｕ等の薄膜を設は
多層構造にしてオーム接触としていた。しかし、この方
法では金属電極７を多層構造にするために薄膜形成並び
にエツチング工程で余計な工程が必要となり、しかも、
Ａｕのエツチングの際に断面形状を制御するのが困斧で
第３図（α）に示すように段差のついた形状となってし
まい透明導電性薊膜を形成すると第３図（ｂ）に示すよ
うに被覆性が悪く断ｍ等の問題を発生していた。Conventionally, the sketch of the M element part of the M process, including the cross section in Fig. 1,
M for one pixel in FIG. 2]: M element and pixel 'F! 1 pole 8
As shown in the planar arrangement, after forming an oxide film 4 on the substrate 3 as an etch stop, one metal electrode 5 of the M element
The metal is formed and buttered. Next, an oxide film 6 is formed on the surface of this metal electrode 5 by @polar oxidation or the like. Next M
A manufacturing sequence was used in which the other metal electrode 7 of the M element was formed, and then the pixel electrode 8 was formed with a transparent conductive thin film. Here, the metal m of the M element is M! 7, Ni-Or alloy or Or is often used due to the characteristics of the element, in which case a natural oxide film is formed on the surface of the metal electrode 7, and the Ni
-Or alloy or Or as it is, the electrical contact with the pixel electrode 8 will become non-ohmic.
A thin film of Au or the like is provided on top of the -Or alloy or Or to form a multilayer structure and provide ohmic contact. However, this method requires extra steps in thin film formation and etching steps in order to make the metal electrode 7 have a multilayer structure.
It is difficult to control the cross-sectional shape during etching of Au, resulting in a stepped shape as shown in Figure 3 (α), and when a transparent conductive film is formed, as shown in Figure 3 (b). As shown, the coating properties were poor and problems such as cutting occurred.
本発明はこのような欠点を除去するために、ＭＩＭ素子
の一方の金属電極５を形成する際に金屈電ｆｉｌｊｉ５
の金属を用いてＭ工Ｍ素子の他方の金属電極７と画素電
極８を結合するパッド部分を設け、かつパッド部分の側
面形状がテーパー状とすることによって金属電極７と画
素電極８の各々の被覆性を向上させるものである。In order to eliminate such drawbacks, the present invention uses gold-conductive filji 5 when forming one metal electrode 5 of the MIM element.
A pad portion is provided to connect the other metal electrode 7 of the M element and the pixel electrode 8 using a metal of This improves coverage.
以下実施例に従って説明する。A description will be given below according to examples.
実施例
パイレックスガラス基板３上にＴ ａ２０Ｂ 及びＴ（
１をスパッタリングによって形成し、リードライン及び
Ｍ工Ｍ素子の一方の金属電極５とパッド９をパターニン
グする。この時、フレオンと酸素の混合ガスを用いてド
ライエツチングを行ないＴαの側面にテーパーがつくよ
うにする〔第４図（α）〕。Example T a20B and T(
1 is formed by sputtering, and the lead line and one metal electrode 5 and pad 9 of the M element are patterned. At this time, dry etching is performed using a mixed gas of freon and oxygen so that the side surface of Tα is tapered [FIG. 4 (α)].
次にＭＩＭ素子の一方の金属電極５表面に陽極酸化で酸
化膜６を形成する。Next, an oxide film 6 is formed on the surface of one metal electrode 5 of the MIM element by anodic oxidation.
次にＮ ｉ −Ｏｒ合金あるいはＯｒによってＭ工Ｍ素
子の他方の金属電極７を形成する〔第４図（ｂ）〕。Next, the other metal electrode 7 of the M element is formed of Ni-Or alloy or Or [FIG. 4(b)].
さらに工Ｔｏ（工”２０ｓ＋５ｎＯ２） 薄膜で画素電
極８を形成する〔第４図（Ｃ）〕。Furthermore, a pixel electrode 8 is formed using a thin film of 20s+5nO2 [FIG. 4(C)].
この状態でのＭ１Ｍ素子部の斜視図を第５図に示す。A perspective view of the M1M element section in this state is shown in FIG.
このＭ工Ｍ素子側基板３と、ストライプ状の電極を持っ
た対向基板とに液晶の配向処理を行ない数μｍ〜士数μ
ｍの間隙を持たせて接着し液晶を封入した後偏光板を貼
りて電気光学装置とする。A liquid crystal alignment process is performed on this M element side substrate 3 and a counter substrate having striped electrodes, which ranges from several μm to several μm.
After adhering with a gap of m and enclosing liquid crystal, a polarizing plate is attached to form an electro-optical device.
本発明によれば従来例のようにＭ工Ｍ素子の一方の金属
電極７を多層構造にする必要がなく工程数を減らして、
且つ金属電極７と画素電極８の電気的接触を確実なもの
に出来る。According to the present invention, there is no need to make one metal electrode 7 of the M element with a multilayer structure as in the conventional example, and the number of steps can be reduced.
Moreover, the electrical contact between the metal electrode 7 and the pixel electrode 8 can be ensured.
また、Ｍ工Ｍ素子の特性や金属［ｔｉｌｊｉ７と画素電
極８との電気的接触等の面からは金属電極７のエツチン
グ形状はどのような状態でも良いと言えるが、Ｍ工Ｍ素
子と液晶間のパッシベーションを考えた場合には、パッ
シベーション膜の被’ｌｄｌ性を良くするために金ｍＷ
Ｌ極７もテーパー状にエツチングすることが望ましい。In addition, from the viewpoint of the characteristics of the M element and the electrical contact between the metal electrode 7 and the pixel electrode 8, the etching shape of the metal electrode 7 may be in any state; When considering the passivation of
It is desirable that the L pole 7 is also etched into a tapered shape.
第１図及び第２図は従来例におけるＭ工Ｍ素子及び画素
電極の関係を示す図である。
第３図は従来例におけるＭＩＭ素子の一方の金属電極７
α、７ｂと画素電極８の断面形状を示す図である。
第４図は本発明における製造法をｇｌａ明する図である
。
第５図は本発明におけるＭ工Ｍ素子と画素７１７．極の
関係を示す図である。
第１図
第２図FIGS. 1 and 2 are diagrams showing the relationship between an M element and a pixel electrode in a conventional example. FIG. 3 shows one metal electrode 7 of an MIM element in a conventional example.
7b and a cross-sectional shape of the pixel electrode 8. FIG. FIG. 4 is a diagram illustrating the manufacturing method of the present invention. FIG. 5 shows the M element and the pixel 717 in the present invention. It is a figure showing the relationship of poles. Figure 1 Figure 2
Claims (1)
体−金属構造を有する非線形素子（以下ＭＩＭ素子と呼
ぶ）を結合し電気的に液晶の分子配列を制御する電気光
学装置において、該Ｍ工Ｍ素子の一方の金属電極２と画
素電極を電気的に結合する部分にＭ工Ｍ素子の他方の金
属電極１を形成する材料を用い、その側面がテーパー状
に形成されていることを特徴とする電気光学装置。Multiple pixels! In an electro-optical device that electrically controls the molecular alignment of a liquid crystal by coupling a nonlinear element (hereinafter referred to as an MIM element) having a metal-insulator-metal structure to each of the pixel electrodes, The material used to form the other metal electrode 1 of the M element is used in the part where one metal electrode 2 of the M element and the pixel electrode are electrically connected, and the side surface thereof is formed into a tapered shape. electro-optical device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140076A JPS5929288A (en) | 1982-08-12 | 1982-08-12 | Electrooptic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140076A JPS5929288A (en) | 1982-08-12 | 1982-08-12 | Electrooptic apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5929288A true JPS5929288A (en) | 1984-02-16 |
| JPH0510652B2 JPH0510652B2 (en) | 1993-02-10 |
Family
ID=15260400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57140076A Granted JPS5929288A (en) | 1982-08-12 | 1982-08-12 | Electrooptic apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5929288A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0487921U (en) * | 1990-12-12 | 1992-07-30 |
-
1982
- 1982-08-12 JP JP57140076A patent/JPS5929288A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0487921U (en) * | 1990-12-12 | 1992-07-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0510652B2 (en) | 1993-02-10 |
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