JP3044725B2 - Thin film transistor substrate - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a thin film transistor substrate, and more particularly to a thin film transistor substrate having a high production yield.

[Conventional technology]

Conventionally, a thin film transistor substrate of this type has a storage capacitor electrode 1 and a gate wiring electrode 3 formed in the same step as shown in a schematic plan view of a thin film transistor shown in FIG. 8, the unnecessary portion of the semiconductor film 8 is removed by etching, the drain wiring electrode 4 is formed thereon, and the display electrode 5 is further formed. The storage capacitor is formed by the overlapping capacitance of the display electrode 5 opposing the storage capacitor electrode 1 via the insulating film.

[Problems to be solved by the invention]

The above-described conventional thin film transistor substrate has a drawback that the production yield is low due to an increase in resistance due to disconnection or a defect of the gate wiring electrode because the gate wiring electrode and the storage capacitor electrode are integrally formed in the same process.

[Means for solving the problem]

The present invention provides a thin film transistor substrate in which an (n-1) th storage capacitor electrode is electrically connected to an nth gate electrode, wherein the storage capacitor electrode is formed of a transparent electrode, and a wiring electrode of the storage capacitor electrode and a gate wiring electrode Are integrally formed in the same process.

〔Example〕

Next, the present invention will be described with reference to the drawings. FIG. 1 is a schematic plan view of a first embodiment of the present invention. After the storage capacitor electrode 1 is formed of a transparent electrode, the storage capacitor wiring electrode 2 and the gate wiring electrode 3 are formed in the same process, then a gate insulating film and a semiconductor film 8 are formed, and unnecessary portions of the semiconductor film 8 are etched. Remove. Thereafter, a drain electrode wiring 4 was formed, and further, a display electrode 5 was formed to obtain a thin film transistor substrate for a 12-inch liquid crystal display.

The thin film transistor substrate thus formed has a yield of 100% with respect to the disconnection of the gate electrode, which is superior to the yield of 85 to 90% with respect to the disconnection of the gate electrode of the conventional thin film transistor substrate. This is because a disconnection defect does not occur unless the wiring electrode of the storage capacitor electrode and the gate wiring electrode are cut at the same time.

FIG. 2 is a schematic plan view of a second embodiment of the present invention. After the storage capacitor electrode 1 is formed of a transparent electrode, the storage capacitor wiring electrode 2 and the gate wiring electrode 3 are formed in the same process, then a gate insulating film and a semiconductor film 8 are formed, and unnecessary portions of the semiconductor film 8 are etched. Remove. Thereafter, a contact hole 6 was opened in the gate insulating film, then a drain electrode wiring 4 and a connection electrode 7 were formed in the same process, and further a display electrode 5 was formed to obtain a thin film transistor substrate for a 12-inch liquid crystal display. In this thin film transistor substrate, one pixel is formed by four display electrodes divided by two gate electrodes and two drain electrodes, and it is difficult to form a storage capacitor with a conventional thin film transistor substrate. However, in this embodiment, the storage capacitor electrode is formed of a transparent electrode, and the wiring electrode and the gate wiring electrode of the storage capacitor electrode are formed in the same process. Therefore, the storage capacitor electrode is divided into two gate electrodes and two drain electrodes. One pixel is composed of four display electrodes, and a storage capacitor can be further formed. Therefore, a liquid crystal display using the thin film transistor substrate has an advantage that display characteristics are good.

〔The invention's effect〕

As described above, according to the present invention, since the storage capacitor electrode is formed of a transparent electrode and the wiring electrode of the storage capacitor electrode and the gate wiring electrode are formed in the same step, the thin film transistor having a high production yield without disconnection of the gate wiring electrode This has the effect of providing a substrate.

[Brief description of the drawings]

FIG. 1 is a schematic plan view showing a thin film transistor substrate according to a first embodiment of the present invention, FIG. 2 is a schematic plan view showing a thin film transistor substrate according to a second embodiment of the present invention, and FIG. FIG. 3 is a schematic plan view showing a thin film transistor substrate. DESCRIPTION OF SYMBOLS 1 ... Storage capacitor electrode, 2 ... Storage capacitor wiring electrode, 3 ... Gate wiring electrode, 4 ... Drain wiring electrode, 5 ... Display electrode, 6 ... Contact hole, 7 ... Connection electrode, 8 ... Semiconductor film.

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) G09F 9/30 338 G02F 1/1365 H01L 21/822 H01L 27/04 H01L 29/786

Claims (1)

(57) [Claims] 1. A thin film transistor substrate having a structure in which an (n-1) th storage capacitor electrode is electrically connected to an nth gate wiring electrode, wherein the storage capacitor electrode is formed of a transparent electrode, and the storage capacitor electrode has a wiring electrode and a gate. A thin film transistor substrate wherein wiring electrodes are integrally formed in the same step.